JPS63250820A - Coating device - Google Patents
Coating deviceInfo
- Publication number
- JPS63250820A JPS63250820A JP8617687A JP8617687A JPS63250820A JP S63250820 A JPS63250820 A JP S63250820A JP 8617687 A JP8617687 A JP 8617687A JP 8617687 A JP8617687 A JP 8617687A JP S63250820 A JPS63250820 A JP S63250820A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- resist
- wafer
- resist solution
- chuck
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000576 coating method Methods 0.000 title claims abstract description 27
- 239000011248 coating agent Substances 0.000 title claims abstract description 26
- 239000002904 solvent Substances 0.000 abstract description 6
- 230000008020 evaporation Effects 0.000 abstract description 5
- 238000001704 evaporation Methods 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000007788 liquid Substances 0.000 description 15
- 230000003399 chemotactic effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
Landscapes
- Coating Apparatus (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
この発明は、ウェハ上に塗布するレジスト膜厚の均一化
を図る塗布装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a coating device for uniformizing the thickness of a resist film coated on a wafer.
(従来の技術)
第3図は例えば特開昭61−137322号公報に示さ
れた従来の塗布装置を示す縦断面図である。この塗布装
置は処理カップ(1)を備えており、この処理カップ(
1)の内部にはウェハチャック(2)が適当な駆動手段
(図示せず)により回転されるように設けられている。(Prior Art) FIG. 3 is a longitudinal sectional view showing a conventional coating device disclosed in, for example, Japanese Patent Laid-Open No. 137322/1983. This coating device is equipped with a processing cup (1), and this processing cup (
A wafer chuck (2) is provided inside the wafer chuck (1) so as to be rotated by suitable drive means (not shown).
処理カップ(1)の上面における中央部には給気口(3
)が開設されており、処理カップ(1)の下面における
ウェハチャック(2)の外方位置には排気口(14)が
開設されている。処理カップ(1)内におけるウェハチ
ャック(2)の中心の真上には、塗布材としてのレジス
ト液(6)を滴下するためのレジスト滴下ノズル(4)
が挿入されており、ノズル(4)にレジスト液(6)の
供給路(7)が接続されており、その途中には温度調整
器(9)が介装されている。温度調整器(9)にはコン
トローラ(10)が接続されており、コントローラ(1
0)の−入力端には滴下ノズル(4)におけるレジスト
液(6)の温度を検出する液温検出器(11)が接続さ
れている。The processing cup (1) has an air supply port (3
) is opened, and an exhaust port (14) is opened at a position outside the wafer chuck (2) on the lower surface of the processing cup (1). Directly above the center of the wafer chuck (2) in the processing cup (1) is a resist dropping nozzle (4) for dropping a resist liquid (6) as a coating material.
is inserted, a supply path (7) for resist liquid (6) is connected to the nozzle (4), and a temperature regulator (9) is interposed in the middle. A controller (10) is connected to the temperature regulator (9).
A liquid temperature detector (11) for detecting the temperature of the resist liquid (6) in the dropping nozzle (4) is connected to the negative input end of the resist liquid (6).
一方、処理カップ(1)の内部には、処理罪囲気温度を
検出する気温検出器(12)が配設されており、気温検
出器(12)はコントローラ(10)の入力端に接続さ
れている。On the other hand, inside the processing cup (1), a temperature detector (12) for detecting the temperature of the surrounding air is arranged, and the temperature detector (12) is connected to the input end of the controller (10). There is.
コントローラ(lO)は液温検出器(11)と気温検出
! (12)との検出結果に基づいて、レジスト液(6
)の温度が処理カップ(1)の雰囲気温度と等しくなる
ように、温度調整器(9)を調整制御するよう構成され
ている。The controller (lO) detects the liquid temperature detector (11) and the air temperature! Based on the detection results with (12), resist solution (6
) is configured to adjust and control the temperature regulator (9) so that the temperature of the processing cup (1) becomes equal to the ambient temperature of the processing cup (1).
次に上記構成に係る従来の塗布装置の動作をレジスト液
の温度制御に着目して説明する。Next, the operation of the conventional coating apparatus having the above configuration will be described with a focus on temperature control of the resist liquid.
ウェハ(5)をウェハチャック(2)上に載せ所定の保
持手段により保持せしめ、ウェハ(5)を回転させる。The wafer (5) is placed on the wafer chuck (2) and held by a predetermined holding means, and the wafer (5) is rotated.
回転中のウェハの中心上に滴下ノズル(4)からレジス
ト液(6)を滴下すると、レジスト液(6)は遠心力に
よって放射方向に拡散し、ウェハ(5)の表面に塗”布
されることになる。When the resist solution (6) is dropped from the dropping nozzle (4) onto the center of the rotating wafer, the resist solution (6) is dispersed in the radial direction by centrifugal force and is coated on the surface of the wafer (5). It turns out.
滴下開始時に、液温検出器(11)からレジスト液(6
)の温度と気温検出器(12)からの処理カップ(1)
の雰囲気温度とを比較し、例えば、レジスト液(6)の
温度が雰囲気温度よりも低い場合には、コントローラ(
lO)は温度調整器(9)をしてレジスト液(6) を
加熱させる。この加熱によりレジスト液(6)の温度が
雰囲気温度と等しくなったことが、液温検出器(11)
と気温検出器(12)との出力によって確認されると、
その相関関係が維持されるように、コントローラ(10
)は温度調整器(9)を調整する。At the start of dropping, the resist liquid (6
) temperature and temperature sensor (12) from the treatment cup (1)
For example, if the temperature of the resist solution (6) is lower than the ambient temperature, the controller (
lO) heats the resist solution (6) by using a temperature regulator (9). The liquid temperature detector (11) indicates that the temperature of the resist liquid (6) has become equal to the ambient temperature due to this heating.
When confirmed by the output of the temperature sensor (12),
The controller (10
) adjusts the temperature regulator (9).
レジスト液(6)の温度と処理カップ(1)の雰囲気温
度が等しくなるとウェハ(5)上に滴下されて拡散塗布
されるレジスト液(6)は加熱されたり、冷却されたり
することが抑制されるため、溶媒の蒸発は略一定になり
、したがって、レジスト液(6)の粘度は塗布の全期間
にわたって略−走化される。粘度が一定になるため、遠
心力によって延ばされるレジスト液(6)の塗布膜は全
体にわたって均一に形成されることになる。When the temperature of the resist solution (6) and the ambient temperature of the processing cup (1) become equal, the resist solution (6) that is dropped and diffused onto the wafer (5) is prevented from being heated or cooled. Therefore, the evaporation of the solvent becomes approximately constant, and therefore the viscosity of the resist solution (6) is approximately chemotactic throughout the entire application period. Since the viscosity is constant, the coating film of the resist liquid (6) that is spread by centrifugal force is uniformly formed over the entire area.
従来の塗布装置は、レジスト液と処理カップ内雰囲気温
度を一致させることで、ウェハ上のレジスト膜厚の均一
化を図っていたが、実際は特定の温度係数を有するウェ
ハチャックと密着するウェハ中央部と、処理カップ内雰
囲気温度の影響を受けるクエへ周辺部との間に発生する
と思われる温度分布の影響により、必ずしも膜厚は均一
とならず、例えばレジスト温度と雰囲気温度が24℃に
等しい場合、第2図(A)の如く、ウェハ中央部の膜厚
が薄く、周辺部が厚くなる傾向があり、例えば平均膜厚
10000Aの時、バラツキσは20〜25Aになる。Conventional coating equipment attempts to make the resist film thickness uniform on the wafer by matching the temperature of the resist solution and the atmosphere inside the processing cup. The film thickness is not necessarily uniform due to the influence of the temperature distribution between the resist and the surrounding area, which is affected by the ambient temperature inside the processing cup.For example, when the resist temperature and the ambient temperature are equal to 24°C. As shown in FIG. 2A, the film thickness tends to be thinner at the center of the wafer and thicker at the periphery.For example, when the average film thickness is 10000A, the variation σ is 20 to 25A.
これは微細パターンに対しては必ずしも満足できるレベ
ルでない。又、ウェハ及びレジスト滴下ノズルの先端部
の両方は、カップ内雰囲気にさらされており、その雰囲
気温度の制御は前記ウェハ及び滴下ノズル先端部を同一
温度にする点では効果的であるが、ノズル先端部とウェ
ハを選択的に温度差を付は制御することは困難である。This is not necessarily a satisfactory level for fine patterns. Furthermore, both the wafer and the tip of the resist dropping nozzle are exposed to the atmosphere inside the cup, and controlling the ambient temperature is effective in keeping the wafer and the tip of the resist dropping nozzle at the same temperature. It is difficult to selectively apply and control a temperature difference between the tip and the wafer.
この発明は、このような問題点を解消するためになされ
たもので、ウェハチャックの温度に合わせてレジスト滴
下ノズル先端の温度を調整す・ることで塗布膜の厚さを
均一化することができる塗布装置を得るこ°とを目的と
する。This invention was made to solve these problems, and it is possible to make the thickness of the coating film uniform by adjusting the temperature of the tip of the resist dropping nozzle according to the temperature of the wafer chuck. The purpose is to obtain a coating device that can.
(′問題点を解決するための手段)
この発明に係る塗布装置はウェハチャックの温度を検出
するセンサを設けると共に、このセンサの温度情報によ
りレジスト滴下ノズル先端の温度を制御するレジスト温
度調整器を設けたものである。('Means for Solving the Problems) The coating apparatus according to the present invention is provided with a sensor that detects the temperature of the wafer chuck, and is also equipped with a resist temperature regulator that controls the temperature of the tip of the resist dropping nozzle based on the temperature information of this sensor. It was established.
この発明におけるレジスト温度調整器は、ウェハチャッ
クの温度に応じて、滴下直前のレジスト温度で若干上げ
ることで、レジスト液の温度はウェハ上の溶媒の蒸発が
一定となり得る温度となり、したがってレジスト液の粘
度は塗布の全期間にわたって略−走化される。粘度が一
定になるため、遠心力によって延ばされるレジスト液の
塗布膜は全体にわたって均一に形成される。The resist temperature regulator of the present invention slightly increases the resist temperature just before dropping according to the temperature of the wafer chuck, so that the temperature of the resist solution becomes a temperature at which the evaporation of the solvent on the wafer can be constant. The viscosity is approximately chemotactic over the entire period of application. Since the viscosity is constant, the coating film of the resist liquid that is stretched by centrifugal force is formed uniformly over the entire area.
第1図はこの発明の一実施例による塗布装置の要部縦断
面図である。図において(1)は処理カップ、(2)は
ウェハチャックでありモータ軸(3)に結合されている
。(4)はレジストノズルでありウェハ(5)上にレジ
スト液(6)を供給する。(8)はチャック温度センサ
、(9)はレジスト温度調整器、(10)は上記チャッ
ク温度センサ(8)出力に基づいてレジスト温度調整器
(9)を制御するレジスト温度制御部である。FIG. 1 is a longitudinal cross-sectional view of a main part of a coating device according to an embodiment of the present invention. In the figure, (1) is a processing cup, and (2) is a wafer chuck, which are connected to a motor shaft (3). (4) is a resist nozzle that supplies resist liquid (6) onto the wafer (5). (8) is a chuck temperature sensor, (9) is a resist temperature regulator, and (10) is a resist temperature control unit that controls the resist temperature regulator (9) based on the output of the chuck temperature sensor (8).
次に上記構成に基づいて本実施例の動作について説明す
る。Next, the operation of this embodiment will be explained based on the above configuration.
レジスト温度制御部(10)はチャック温度センサ(8
)よりウェハチャックの温度情報を入力すると、該温度
情報に基づいてレジスト温度調整器(9)へ、レジスト
液(6)温度をウェハチャック温度より若干より上げる
制御信号を送出する。この時、ウェハ(5)の熱容量は
比較的少なく、通常のレジスト処理時間の範囲ではウェ
ハ温度はウェハチャック(2)の温度と略等しい。この
ように滴下レジスト液とウェハの相対温度関係が適正な
ものになった時点で、ウェハ(5)上に滴下されて拡散
塗布されるレジスト液(6)は加熱されたり、冷却され
たりすることが抑制されるため、溶媒の蒸発は略一定に
なり、したがってレジスト液(6) の粘度は塗布の全
期間にわたフて略−走化される。粘度が一定になるため
、遠心力によって延ばされるレジスト液(6)の塗布膜
は全体にわたって均一に形成されることになる。The resist temperature control section (10) has a chuck temperature sensor (8).
) When the temperature information of the wafer chuck is inputted, a control signal is sent to the resist temperature regulator (9) to raise the temperature of the resist liquid (6) slightly higher than the wafer chuck temperature based on the temperature information. At this time, the heat capacity of the wafer (5) is relatively small, and the wafer temperature is approximately equal to the temperature of the wafer chuck (2) within the normal resist processing time range. When the relative temperature relationship between the dropped resist solution and the wafer becomes appropriate in this way, the resist solution (6) that is dropped and diffused onto the wafer (5) is heated or cooled. Since the evaporation of the solvent is suppressed, the evaporation of the solvent becomes approximately constant, and therefore the viscosity of the resist solution (6) is approximately chemotactic throughout the entire application period. Since the viscosity is constant, the coating film of the resist liquid (6) that is spread by centrifugal force is uniformly formed over the entire area.
一例としてウェハチャックの温度24℃に対し1〜1.
5℃高いレジストを滴下すると第2図の(B)の毎くウ
ェハ中央部の膜厚を厚くし、平均膜厚1oooo八にお
いてばらつき0はIOA程度とすることが出来、従来技
術に比較して均一性のよい塗布膜厚を得ることができる
。As an example, the temperature of the wafer chuck is 1 to 1.
By dropping a resist that is 5°C warmer, the film thickness at the center of the wafer becomes thicker as shown in Figure 2 (B), and with an average film thickness of 100%, the variation can be reduced to about IOA, compared to the conventional technology. A coating film thickness with good uniformity can be obtained.
以上のようにこの発明によれば、ウェハチャックの温度
に応じて、滴下直前のレジスト液の温度を調整すること
で、ウェハ上の溶媒の温度とレジスト液の温度の相関関
係を最適なものにし得る為、塗布材の粘度を塗布の全期
間にわたって一定化し得、それによってレジスト膜の厚
さをウェハ全体にわたりて均一化できる塗布装置を得ら
れる効果がある。As described above, according to the present invention, by adjusting the temperature of the resist solution just before dropping according to the temperature of the wafer chuck, the correlation between the temperature of the solvent on the wafer and the temperature of the resist solution is optimized. Therefore, the viscosity of the coating material can be made constant over the entire coating period, thereby making it possible to obtain a coating apparatus that can make the thickness of the resist film uniform over the entire wafer.
第1図はこの発明の一実施例の塗布装置を示す要部縦断
面図、第2図はウェハ上のレジスト塗布膜厚を示すグラ
フ、第3図は従来の塗布装置を示す縦断面図。
図において、(2)はウェハチャック、(4)はレジス
ト滴下ノズル、(5)はウェハ、(6)はレジスト、(
8)はチャック温度センサ、(9)はレジスト温度調整
器、(lO)はレジスト温度’MJ御部。
なお、各図中同一符号は同一または相当部分を示す。FIG. 1 is a longitudinal cross-sectional view of a main part showing a coating apparatus according to an embodiment of the present invention, FIG. 2 is a graph showing the thickness of a resist coating film on a wafer, and FIG. 3 is a longitudinal cross-sectional view of a conventional coating apparatus. In the figure, (2) is a wafer chuck, (4) is a resist dropping nozzle, (5) is a wafer, (6) is a resist, (
8) is a chuck temperature sensor, (9) is a resist temperature regulator, and (lO) is a resist temperature 'MJ control section. Note that the same reference numerals in each figure indicate the same or corresponding parts.
Claims (1)
ト液を供給し、遠心力を利用してウェハ上にレジスト膜
を形成する塗布装置において、ウェハチャックの温度を
検出するセンサを有すると共に、該センサの温度情報に
基づいてレジスト滴下ノズル先端部近傍の温度を制御す
る温度調整器をレジスト滴下ノズルに設けたことを特徴
とする塗布装置。A coating device that supplies a resist solution onto a wafer placed on a rotating wafer chuck and forms a resist film on the wafer using centrifugal force, the coating device having a sensor that detects the temperature of the wafer chuck, and a sensor that detects the temperature of the wafer chuck. 1. A coating device characterized in that a resist dropping nozzle is provided with a temperature regulator that controls the temperature near the tip of the resist dropping nozzle based on temperature information of the resist dropping nozzle.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8617687A JPS63250820A (en) | 1987-04-08 | 1987-04-08 | Coating device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8617687A JPS63250820A (en) | 1987-04-08 | 1987-04-08 | Coating device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63250820A true JPS63250820A (en) | 1988-10-18 |
Family
ID=13879449
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8617687A Pending JPS63250820A (en) | 1987-04-08 | 1987-04-08 | Coating device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63250820A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01236626A (en) * | 1988-03-17 | 1989-09-21 | Tokyo Electron Ltd | Resist coating process |
JPH02307566A (en) * | 1989-05-22 | 1990-12-20 | Tokyo Electron Ltd | Coating apparatus |
JPH03106728U (en) * | 1990-02-21 | 1991-11-05 |
-
1987
- 1987-04-08 JP JP8617687A patent/JPS63250820A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01236626A (en) * | 1988-03-17 | 1989-09-21 | Tokyo Electron Ltd | Resist coating process |
JPH02307566A (en) * | 1989-05-22 | 1990-12-20 | Tokyo Electron Ltd | Coating apparatus |
JPH03106728U (en) * | 1990-02-21 | 1991-11-05 |
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