JPS63177100A - Atomic/molecular beam probe - Google Patents
Atomic/molecular beam probeInfo
- Publication number
- JPS63177100A JPS63177100A JP976687A JP976687A JPS63177100A JP S63177100 A JPS63177100 A JP S63177100A JP 976687 A JP976687 A JP 976687A JP 976687 A JP976687 A JP 976687A JP S63177100 A JPS63177100 A JP S63177100A
- Authority
- JP
- Japan
- Prior art keywords
- atomic
- single crystal
- molecular beam
- beam probe
- probe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000523 sample Substances 0.000 title claims description 14
- 239000000463 material Substances 0.000 claims description 33
- 239000013078 crystal Substances 0.000 claims description 25
- 230000007547 defect Effects 0.000 claims description 14
- 239000012535 impurity Substances 0.000 claims description 8
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 229910052734 helium Inorganic materials 0.000 claims description 2
- 229910010293 ceramic material Inorganic materials 0.000 claims 1
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 229910052763 palladium Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】 〔産業上の利用分舒〕 本発明は、原子・分子線プローブに関する。[Detailed description of the invention] [Industrial use distribution] The present invention relates to an atomic/molecular beam probe.
従来、原子プローブの代表的なものに、イオン・ビーム
・プローブがあり、これは、タングステンＨノエッチン
グ先端に、水素ガスやヘリウム、あるいはアルゴン・ガ
スを濡らして、これらガスのビームを放射するのが通例
であった。Conventionally, a typical atomic probe is an ion beam probe, which wets the tungsten H etching tip with hydrogen, helium, or argon gas and emits a beam of these gases. was the norm.
１−−ｈｓ Ｉ Ｌ ｒｌ光立仕価１．− ？ Ｌ
Ｌ Ａ−７１１品す線のエツチング先端の径が一定
せず、ひいては、ビーム径が一定しないと云う問題点が
あった。1--hs I L rl Light price 1. −? L
There was a problem in that the diameter of the etched tip of the LA-711 product wire was not constant, and as a result, the beam diameter was not constant.
本発明は、かかる従来技術の問題点をなくし、極めて細
い原子・分子線を放出できると共に、極めて径の安定し
たプローブ構造を提供する事を目的とする。It is an object of the present invention to eliminate the problems of the prior art and to provide a probe structure that can emit extremely thin atomic/molecular beams and has an extremely stable diameter.
上記問題点を解決するために、本発明は、原子・分子線
プローブとして、第１の材料６−ら成る単結晶体の結晶
欠陥部には、第２の材料から成る不純物材料が拡散、析
出され、該結晶欠陥部に第３の材料を透過する事により
、第３の材料のビームを放射する手段をとる事を基本と
する。In order to solve the above-mentioned problems, the present invention provides an atomic/molecular beam probe in which an impurity material made of a second material is diffused and precipitated in the crystal defect part of a single crystal made of a first material 6-. Basically, a method is adopted in which a beam of the third material is emitted by transmitting the third material into the crystal defect portion.
第１の材料は単結晶体であり、ソ且つ結晶欠陥を含有し
て居り、該結晶欠陥部位には第２の不純物材料を拡散、
析出させる事が出来ると共に、該第２の不純物材料に第
３の材料を透過させる作用があると、丁度、第１の材料
の結晶欠陥部位は第２の材料によって埋められた、第３
の材料に対するパイプとしての作用があり、結晶欠陥の
大きさのプローブが安定に提供できる作用となる。The first material is a single crystal and contains crystal defects, and a second impurity material is diffused into the crystal defect sites.
If the second impurity material has the effect of transmitting the third material, the crystal defect site of the first material will be filled with the second impurity material and the third impurity material will be precipitated.
It acts as a pipe for the material, and is able to stably provide probes of the size of crystal defects.
以下、実施例により本発明を詳述する。 Hereinafter, the present invention will be explained in detail with reference to Examples.
第１図を本発明の一実施例を示す原子線プローブの模式
図である。すなわち、いま、Ｓｉ単結晶ウエーベにおけ
るＳ１格子１内に結晶欠陥２が有り、該結晶欠陥２内に
パラジウム析出３を前記Ｓ１単結晶ウエーハの表面にＰ
（ｌをスパッタ法で１０００１程度蒸着し、１． ＯＯ
０℃乃至１．２００℃で数時間加熱することにより拡散
、析出させ、該Ｐ（ｌ析出結晶欠陥部位を選択的にＳ１
ウエーハから切′シ出し、プローブとなす事により、前
記パラジウム析出３部はＰａが水素吸蔵及び透過作用に
すぐれているところ−から、水素ガス４は、一方から他
方へビーム状に放出させることができる。FIG. 1 is a schematic diagram of an atomic beam probe showing an embodiment of the present invention. That is, now there is a crystal defect 2 in the S1 lattice 1 in the Si single crystal wafer, and palladium precipitation 3 is deposited in the crystal defect 2 on the surface of the S1 single crystal wafer.
(Approximately 10,001 liters of l were deposited by sputtering, and 1.OO
By heating at 0°C to 1.200°C for several hours, it is diffused and precipitated, and the P(l precipitated crystal defect sites are selectively converted to S1.
By cutting it out from the wafer and using it as a probe, the hydrogen gas 4 can be released in a beam form from one part to the other from the palladium deposited part 3, where Pa has excellent hydrogen absorption and permeation properties. .
本発明は、第１の材料は単結晶ですれば良く、Ｓ１単結
晶に限らずセラミックや他の金属あるいは合金の単結晶
であっても良い。In the present invention, the first material only needs to be a single crystal, and is not limited to the S1 single crystal, but may be a single crystal of ceramic, other metals, or alloys.
更に、本発明の結晶欠陥は直線転位に限らず螺線転痘で
あっても良く、更にはへテロ接合部の界面に於ける結晶
不整合部を用いても良−０更に、本発明の第２の材料は
第３の材料の透過性を要求しているのみであり、Ｐｄに
限らずＷ。Furthermore, the crystal defects of the present invention are not limited to linear dislocations, but may also be spiral dislocations, and furthermore, crystal defects at the interface of heterojunctions may be used. The second material only requires the transparency of the third material, and is not limited to Pd but W.
やＭＯ，等その他の材料２重金属類等であっても良い。Other materials such as , MO, etc., double metals, etc. may also be used.
更に、第３の材料は水素ガスに限らず、水素化ガスやＧ
ａ等の液体であっても良く、要は、ビーム状に取シ出し
たい原子・分子であれば良−６〔発明の効果〕
本発明により、極めて細い原子・分子ビーム・プローブ
が径の安定性良く提供できる効果があるFurthermore, the third material is not limited to hydrogen gas, but also hydrogen gas and G
It may be a liquid such as a, but in short, any atoms or molecules that are to be extracted in the form of a beam may be used.6 [Effects of the Invention] According to the present invention, extremely thin atomic/molecular beams/probes can be made with a stable diameter. It has the effect of being able to provide good results.
一実施例を示す模式図である。 １・・・・・・・・・ｓ１格子 ２・・・・・・・・・結晶欠陥 ３・・・・・・・・・パラジウム析出 ４・・・・・・・・・水素ガス 以 上 FIG. 2 is a schematic diagram showing an example. 1・・・・・・s1 lattice 2...Crystal defect 3...Palladium deposition ４・・・・・・・・・Hydrogen gas that's all
Claims (5)
２の材料から成る不純物材料が拡散・析出され、該結晶
欠陥部位に第３の材料を透過する事により第３の材料の
ビームを放射する事を特徴とする原子・分子線プローブ
。(1) An impurity material made of the second material is diffused and precipitated in the crystal defect part of the single crystal body made of the first material, and by passing the third material into the crystal defect part, the third material An atomic/molecular beam probe that emits a beam of
の不純物材料をＰｄ、第３の材料をＨとなすことを特徴
とする特許請求の範囲第１項記載の原子・分子線プロー
ブ。(2) Atoms and molecules according to claim 1, characterized in that the single crystal made of the first material is Si, the impurity material of the second material is Pd, and the third material is H. line probe.
から成る不純物材料をＷ、第３の材料をＨｅまたはＡｒ
となすことを特徴とする特許請求の範囲第１項記載の原
子・分子線プローブ。(3) The single crystal made of the first material is Si, the impurity material made of the second material is W, and the third material is He or Ar.
The atomic/molecular beam probe according to claim 1, characterized in that:
、ＢＮ、ＳｉＣ、Ａｌ＿２Ｏ＿３等のセラミック材とな
す事を特徴とする特許請求の範囲第１項記載の原子・分
子線プローブ。(4) The single crystal body consisting of the first material body is Si_3N_4
, BN, SiC, Al_2O_3, or other ceramic material.
３等の水素化ガス体となす事を特徴とする特許請求の範
囲第１項記載の原子・分子線プローブ。(5) The third material is PH_3, B_2H_6, AsH_
The atomic/molecular beam probe according to claim 1, characterized in that it is a hydrogenated gas such as No. 3 hydrogenated gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP976687A JPS63177100A (en) | 1987-01-19 | 1987-01-19 | Atomic/molecular beam probe |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP976687A JPS63177100A (en) | 1987-01-19 | 1987-01-19 | Atomic/molecular beam probe |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63177100A true JPS63177100A (en) | 1988-07-21 |
Family
ID=11729392
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP976687A Pending JPS63177100A (en) | 1987-01-19 | 1987-01-19 | Atomic/molecular beam probe |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63177100A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010098287A (en) * | 2008-10-20 | 2010-04-30 | Askey Computer Corp | Assembling jig |
-
1987
- 1987-01-19 JP JP976687A patent/JPS63177100A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010098287A (en) * | 2008-10-20 | 2010-04-30 | Askey Computer Corp | Assembling jig |
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