JPS63163452A - Image formation - Google Patents
Image formationInfo
- Publication number
- JPS63163452A JPS63163452A JP32002187A JP32002187A JPS63163452A JP S63163452 A JPS63163452 A JP S63163452A JP 32002187 A JP32002187 A JP 32002187A JP 32002187 A JP32002187 A JP 32002187A JP S63163452 A JPS63163452 A JP S63163452A
- Authority
- JP
- Japan
- Prior art keywords
- group
- radiation
- aromatic
- groups
- component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015572 biosynthetic process Effects 0.000 title description 2
- -1 IVA organometallic compound Chemical class 0.000 claims description 97
- 239000000203 mixture Substances 0.000 claims description 77
- 125000004432 carbon atom Chemical group C* 0.000 claims description 61
- 230000005855 radiation Effects 0.000 claims description 60
- 125000000217 alkyl group Chemical group 0.000 claims description 40
- 125000003118 aryl group Chemical group 0.000 claims description 31
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 29
- 150000001450 anions Chemical class 0.000 claims description 27
- 150000001875 compounds Chemical class 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 24
- 229920005989 resin Polymers 0.000 claims description 24
- 239000011347 resin Substances 0.000 claims description 24
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical group OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 22
- 229920000642 polymer Polymers 0.000 claims description 20
- 239000007788 liquid Substances 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 19
- 229910052802 copper Inorganic materials 0.000 claims description 18
- 239000010949 copper Substances 0.000 claims description 18
- 150000002148 esters Chemical class 0.000 claims description 18
- 239000000126 substance Substances 0.000 claims description 18
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 17
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 15
- 229910052742 iron Inorganic materials 0.000 claims description 15
- 239000010936 titanium Substances 0.000 claims description 14
- 239000003999 initiator Substances 0.000 claims description 13
- 239000003505 polymerization initiator Substances 0.000 claims description 13
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 claims description 12
- 229910052719 titanium Inorganic materials 0.000 claims description 12
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 11
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 11
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 11
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 11
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 claims description 9
- 125000004429 atom Chemical group 0.000 claims description 8
- ISAOCJYIOMOJEB-UHFFFAOYSA-N benzoin Chemical group C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 claims description 8
- 229910052801 chlorine Inorganic materials 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 229920000728 polyester Polymers 0.000 claims description 8
- 239000000460 chlorine Substances 0.000 claims description 7
- 125000005843 halogen group Chemical group 0.000 claims description 7
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical group [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 6
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 150000004945 aromatic hydrocarbons Chemical class 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 239000011651 chromium Substances 0.000 claims description 6
- 150000002500 ions Chemical class 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 5
- 150000001298 alcohols Chemical class 0.000 claims description 5
- 230000001588 bifunctional effect Effects 0.000 claims description 5
- 239000003638 chemical reducing agent Substances 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 5
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical compound C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 claims description 4
- 150000001768 cations Chemical class 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- 229920006295 polythiol Chemical group 0.000 claims description 4
- NLGDWWCZQDIASO-UHFFFAOYSA-N 2-hydroxy-1-(7-oxabicyclo[4.1.0]hepta-1,3,5-trien-2-yl)-2-phenylethanone Chemical compound OC(C(=O)c1cccc2Oc12)c1ccccc1 NLGDWWCZQDIASO-UHFFFAOYSA-N 0.000 claims description 3
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 239000010955 niobium Substances 0.000 claims description 3
- 229910052755 nonmetal Inorganic materials 0.000 claims description 3
- 150000002923 oximes Chemical class 0.000 claims description 3
- 125000003396 thiol group Chemical group [H]S* 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- CDSULTPOCMWJCM-UHFFFAOYSA-N 4h-chromene-2,3-dione Chemical compound C1=CC=C2OC(=O)C(=O)CC2=C1 CDSULTPOCMWJCM-UHFFFAOYSA-N 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- DHKHKXVYLBGOIT-UHFFFAOYSA-N acetaldehyde Diethyl Acetal Natural products CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 claims description 2
- 239000012954 diazonium Substances 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052741 iridium Inorganic materials 0.000 claims description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 2
- 229910052762 osmium Inorganic materials 0.000 claims description 2
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052702 rhenium Inorganic materials 0.000 claims description 2
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims description 2
- 229910052703 rhodium Inorganic materials 0.000 claims description 2
- 239000010948 rhodium Substances 0.000 claims description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052707 ruthenium Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- RWSOTUBLDIXVET-UHFFFAOYSA-O sulfonium Chemical compound [SH3+] RWSOTUBLDIXVET-UHFFFAOYSA-O 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- 230000007704 transition Effects 0.000 claims description 2
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 claims description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 2
- MGFYSGNNHQQTJW-UHFFFAOYSA-N iodonium Chemical compound [IH2+] MGFYSGNNHQQTJW-UHFFFAOYSA-N 0.000 claims 2
- MWKAGZWJHCTVJY-UHFFFAOYSA-N 3-hydroxyoctadecan-2-one Chemical compound CCCCCCCCCCCCCCCC(O)C(C)=O MWKAGZWJHCTVJY-UHFFFAOYSA-N 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 claims 1
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 36
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 22
- 150000003839 salts Chemical group 0.000 description 18
- 125000003545 alkoxy group Chemical group 0.000 description 16
- 150000002989 phenols Chemical class 0.000 description 16
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 16
- 239000000243 solution Substances 0.000 description 16
- 125000002777 acetyl group Chemical group [H]C([H])([H])C(*)=O 0.000 description 15
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 14
- 239000011248 coating agent Substances 0.000 description 14
- 238000000576 coating method Methods 0.000 description 14
- 229910052736 halogen Inorganic materials 0.000 description 13
- 229910001507 metal halide Inorganic materials 0.000 description 13
- 150000005309 metal halides Chemical class 0.000 description 13
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 12
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 12
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 12
- 229910052799 carbon Inorganic materials 0.000 description 12
- 239000000975 dye Substances 0.000 description 12
- 125000001931 aliphatic group Chemical group 0.000 description 11
- 229910052731 fluorine Inorganic materials 0.000 description 11
- 125000001153 fluoro group Chemical group F* 0.000 description 11
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 11
- 229910052757 nitrogen Inorganic materials 0.000 description 11
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 10
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 9
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 9
- YBYIRNPNPLQARY-UHFFFAOYSA-N 1H-indene Natural products C1=CC=C2CC=CC2=C1 YBYIRNPNPLQARY-UHFFFAOYSA-N 0.000 description 8
- HIXDQWDOVZUNNA-UHFFFAOYSA-N 2-(3,4-dimethoxyphenyl)-5-hydroxy-7-methoxychromen-4-one Chemical compound C=1C(OC)=CC(O)=C(C(C=2)=O)C=1OC=2C1=CC=C(OC)C(OC)=C1 HIXDQWDOVZUNNA-UHFFFAOYSA-N 0.000 description 8
- 125000001424 substituent group Chemical group 0.000 description 8
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 7
- 239000007864 aqueous solution Substances 0.000 description 7
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 7
- 229920001577 copolymer Polymers 0.000 description 7
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 7
- 229920003986 novolac Polymers 0.000 description 7
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 6
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 6
- 125000003277 amino group Chemical group 0.000 description 6
- 125000004103 aminoalkyl group Chemical group 0.000 description 6
- 150000001721 carbon Chemical group 0.000 description 6
- 239000007795 chemical reaction product Substances 0.000 description 6
- 125000001309 chloro group Chemical group Cl* 0.000 description 6
- RWGFKTVRMDUZSP-UHFFFAOYSA-N cumene Chemical compound CC(C)C1=CC=CC=C1 RWGFKTVRMDUZSP-UHFFFAOYSA-N 0.000 description 6
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 229920001519 homopolymer Polymers 0.000 description 6
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 6
- 150000002734 metacrylic acid derivatives Chemical class 0.000 description 6
- 239000003960 organic solvent Substances 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 229920000647 polyepoxide Polymers 0.000 description 6
- 239000000047 product Substances 0.000 description 6
- BBEAQIROQSPTKN-UHFFFAOYSA-N pyrene Chemical compound C1=CC=C2C=CC3=CC=CC4=CC=C1C2=C43 BBEAQIROQSPTKN-UHFFFAOYSA-N 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- WTQZSMDDRMKJRI-UHFFFAOYSA-N 4-diazoniophenolate Chemical group [O-]C1=CC=C([N+]#N)C=C1 WTQZSMDDRMKJRI-UHFFFAOYSA-N 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 description 5
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 5
- 125000000753 cycloalkyl group Chemical group 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 5
- 239000011572 manganese Substances 0.000 description 5
- 125000004430 oxygen atom Chemical group O* 0.000 description 5
- 150000004291 polyenes Chemical class 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- FYGHSUNMUKGBRK-UHFFFAOYSA-N 1,2,3-trimethylbenzene Chemical compound CC1=CC=CC(C)=C1C FYGHSUNMUKGBRK-UHFFFAOYSA-N 0.000 description 4
- QPUYECUOLPXSFR-UHFFFAOYSA-N 1-methylnaphthalene Chemical compound C1=CC=C2C(C)=CC=CC2=C1 QPUYECUOLPXSFR-UHFFFAOYSA-N 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 4
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 4
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 125000004414 alkyl thio group Chemical group 0.000 description 4
- 125000002947 alkylene group Chemical group 0.000 description 4
- XXROGKLTLUQVRX-UHFFFAOYSA-N allyl alcohol Chemical compound OCC=C XXROGKLTLUQVRX-UHFFFAOYSA-N 0.000 description 4
- NQFUSWIGRKFAHK-BDNRQGISSA-N alpha-Pinene epoxide Natural products C([C@@H]1O[C@@]11C)[C@@H]2C(C)(C)[C@H]1C2 NQFUSWIGRKFAHK-BDNRQGISSA-N 0.000 description 4
- 229930006723 alpha-pinene oxide Natural products 0.000 description 4
- 150000001412 amines Chemical class 0.000 description 4
- 150000008064 anhydrides Chemical class 0.000 description 4
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 4
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 4
- 125000003710 aryl alkyl group Chemical group 0.000 description 4
- HUMNYLRZRPPJDN-UHFFFAOYSA-N benzaldehyde Chemical compound O=CC1=CC=CC=C1 HUMNYLRZRPPJDN-UHFFFAOYSA-N 0.000 description 4
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 4
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 4
- 239000012965 benzophenone Substances 0.000 description 4
- DZBUGLKDJFMEHC-UHFFFAOYSA-N benzoquinolinylidene Natural products C1=CC=CC2=CC3=CC=CC=C3N=C21 DZBUGLKDJFMEHC-UHFFFAOYSA-N 0.000 description 4
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 4
- 150000001735 carboxylic acids Chemical class 0.000 description 4
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 4
- 125000004122 cyclic group Chemical group 0.000 description 4
- IYYZUPMFVPLQIF-UHFFFAOYSA-N dibenzothiophene Chemical compound C1=CC=C2C3=CC=CC=C3SC2=C1 IYYZUPMFVPLQIF-UHFFFAOYSA-N 0.000 description 4
- ZSWFCLXCOIISFI-UHFFFAOYSA-N endo-cyclopentadiene Natural products C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 4
- 125000004185 ester group Chemical group 0.000 description 4
- 238000001914 filtration Methods 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 4
- 239000003446 ligand Substances 0.000 description 4
- 229910052748 manganese Inorganic materials 0.000 description 4
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 4
- 150000002902 organometallic compounds Chemical class 0.000 description 4
- YNPNZTXNASCQKK-UHFFFAOYSA-N phenanthrene Chemical compound C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 description 4
- 238000006116 polymerization reaction Methods 0.000 description 4
- 239000002244 precipitate Substances 0.000 description 4
- CIHOLLKRGTVIJN-UHFFFAOYSA-N tert‐butyl hydroperoxide Chemical compound CC(C)(C)OO CIHOLLKRGTVIJN-UHFFFAOYSA-N 0.000 description 4
- NQFUSWIGRKFAHK-UHFFFAOYSA-N 2,3-epoxypinane Chemical compound CC12OC1CC1C(C)(C)C2C1 NQFUSWIGRKFAHK-UHFFFAOYSA-N 0.000 description 3
- FRIBMENBGGCKPD-UHFFFAOYSA-N 3-(2,3-dimethoxyphenyl)prop-2-enal Chemical compound COC1=CC=CC(C=CC=O)=C1OC FRIBMENBGGCKPD-UHFFFAOYSA-N 0.000 description 3
- DKIDEFUBRARXTE-UHFFFAOYSA-N 3-mercaptopropanoic acid Chemical compound OC(=O)CCS DKIDEFUBRARXTE-UHFFFAOYSA-N 0.000 description 3
- QHPQWRBYOIRBIT-UHFFFAOYSA-N 4-tert-butylphenol Chemical compound CC(C)(C)C1=CC=C(O)C=C1 QHPQWRBYOIRBIT-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 description 3
- 229930185605 Bisphenol Natural products 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
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- WJRBRSLFGCUECM-UHFFFAOYSA-N hydantoin Chemical compound O=C1CNC(=O)N1 WJRBRSLFGCUECM-UHFFFAOYSA-N 0.000 description 1
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- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002440 hydroxy compounds Chemical class 0.000 description 1
- 125000003392 indanyl group Chemical group C1(CCC2=CC=CC=C12)* 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000012442 inert solvent Substances 0.000 description 1
- INQOMBQAUSQDDS-UHFFFAOYSA-N iodomethane Chemical group IC INQOMBQAUSQDDS-UHFFFAOYSA-N 0.000 description 1
- 159000000014 iron salts Chemical class 0.000 description 1
- 125000000468 ketone group Chemical group 0.000 description 1
- 150000002596 lactones Chemical class 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 239000004611 light stabiliser Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 150000002696 manganese Chemical class 0.000 description 1
- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 1
- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000005394 methallyl group Chemical group 0.000 description 1
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 description 1
- YDKNBNOOCSNPNS-UHFFFAOYSA-N methyl 1,3-benzoxazole-2-carboxylate Chemical compound C1=CC=C2OC(C(=O)OC)=NC2=C1 YDKNBNOOCSNPNS-UHFFFAOYSA-N 0.000 description 1
- 229940102396 methyl bromide Drugs 0.000 description 1
- GTJTUNZBYODVSY-UHFFFAOYSA-N methyl cyclopenta-1,3-diene-1-carboxylate Chemical compound COC(=O)C1=CC=CC1 GTJTUNZBYODVSY-UHFFFAOYSA-N 0.000 description 1
- 125000002816 methylsulfanyl group Chemical group [H]C([H])([H])S[*] 0.000 description 1
- 125000004573 morpholin-4-yl group Chemical group N1(CCOCC1)* 0.000 description 1
- 125000001421 myristyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- 125000004708 n-butylthio group Chemical group C(CCC)S* 0.000 description 1
- 125000001298 n-hexoxy group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])O* 0.000 description 1
- 125000004718 n-hexylthio group Chemical group C(CCCCC)S* 0.000 description 1
- 125000006608 n-octyloxy group Chemical group 0.000 description 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
- 125000004712 n-pentylthio group Chemical group C(CCCC)S* 0.000 description 1
- DYUWTXWIYMHBQS-UHFFFAOYSA-N n-prop-2-enylprop-2-en-1-amine Chemical compound C=CCNCC=C DYUWTXWIYMHBQS-UHFFFAOYSA-N 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000004706 n-propylthio group Chemical group C(CC)S* 0.000 description 1
- CMWTZPSULFXXJA-VIFPVBQESA-N naproxen Chemical group C1=C([C@H](C)C(O)=O)C=CC2=CC(OC)=CC=C21 CMWTZPSULFXXJA-VIFPVBQESA-N 0.000 description 1
- 150000002825 nitriles Chemical group 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 125000006501 nitrophenyl group Chemical group 0.000 description 1
- ZCYXXKJEDCHMGH-UHFFFAOYSA-N nonane Chemical compound CCCC[CH]CCCC ZCYXXKJEDCHMGH-UHFFFAOYSA-N 0.000 description 1
- 150000002843 nonmetals Chemical class 0.000 description 1
- BKIMMITUMNQMOS-UHFFFAOYSA-N normal nonane Natural products CCCCCCCCC BKIMMITUMNQMOS-UHFFFAOYSA-N 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000012634 optical imaging Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- AHHWIHXENZJRFG-UHFFFAOYSA-N oxetane Chemical compound C1COC1 AHHWIHXENZJRFG-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- QKOHYQVZNLEAJH-UHFFFAOYSA-N oxomethylidenemanganese Chemical compound O=C=[Mn] QKOHYQVZNLEAJH-UHFFFAOYSA-N 0.000 description 1
- 125000003854 p-chlorophenyl group Chemical group [H]C1=C([H])C(*)=C([H])C([H])=C1Cl 0.000 description 1
- NWVVVBRKAWDGAB-UHFFFAOYSA-N p-methoxyphenol Chemical compound COC1=CC=C(O)C=C1 NWVVVBRKAWDGAB-UHFFFAOYSA-N 0.000 description 1
- 125000000913 palmityl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 150000002976 peresters Chemical class 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 150000004965 peroxy acids Chemical class 0.000 description 1
- DLRJIFUOBPOJNS-UHFFFAOYSA-N phenetole Chemical compound CCOC1=CC=CC=C1 DLRJIFUOBPOJNS-UHFFFAOYSA-N 0.000 description 1
- 239000005011 phenolic resin Chemical group 0.000 description 1
- 125000000286 phenylethyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001639 phenylmethylene group Chemical group [H]C(=*)C1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- LGRFSURHDFAFJT-UHFFFAOYSA-N phthalic anhydride Chemical class C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 125000005936 piperidyl group Chemical group 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920002401 polyacrylamide Polymers 0.000 description 1
- 229920001515 polyalkylene glycol Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920000909 polytetrahydrofuran Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002689 polyvinyl acetate Polymers 0.000 description 1
- 239000011118 polyvinyl acetate Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- 159000000001 potassium salts Chemical class 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- PNXMTCDJUBJHQJ-UHFFFAOYSA-N propyl prop-2-enoate Chemical compound CCCOC(=O)C=C PNXMTCDJUBJHQJ-UHFFFAOYSA-N 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- OSFBJERFMQCEQY-UHFFFAOYSA-N propylidene Chemical group [CH]CC OSFBJERFMQCEQY-UHFFFAOYSA-N 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 238000010526 radical polymerization reaction Methods 0.000 description 1
- 229910052705 radium Inorganic materials 0.000 description 1
- HCWPIIXVSYCSAN-UHFFFAOYSA-N radium atom Chemical compound [Ra] HCWPIIXVSYCSAN-UHFFFAOYSA-N 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 239000012744 reinforcing agent Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- GEHJYWRUCIMESM-UHFFFAOYSA-L sodium sulfite Chemical compound [Na+].[Na+].[O-]S([O-])=O GEHJYWRUCIMESM-UHFFFAOYSA-L 0.000 description 1
- 235000010265 sodium sulphite Nutrition 0.000 description 1
- CHLCPTJLUJHDBO-UHFFFAOYSA-M sodium;benzenesulfinate Chemical compound [Na+].[O-]S(=O)C1=CC=CC=C1 CHLCPTJLUJHDBO-UHFFFAOYSA-M 0.000 description 1
- 239000012265 solid product Substances 0.000 description 1
- 230000007928 solubilization Effects 0.000 description 1
- 238000005063 solubilization Methods 0.000 description 1
- KXCAEQNNTZANTK-UHFFFAOYSA-N stannane Chemical compound [SnH4] KXCAEQNNTZANTK-UHFFFAOYSA-N 0.000 description 1
- 229910000080 stannane Inorganic materials 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical compound C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 235000021286 stilbenes Nutrition 0.000 description 1
- 125000000547 substituted alkyl group Chemical group 0.000 description 1
- 125000004426 substituted alkynyl group Chemical group 0.000 description 1
- 125000005346 substituted cycloalkyl group Chemical group 0.000 description 1
- 125000005717 substituted cycloalkylene group Chemical group 0.000 description 1
- 150000003459 sulfonic acid esters Chemical class 0.000 description 1
- 125000000542 sulfonic acid group Chemical group 0.000 description 1
- 125000000472 sulfonyl group Chemical group *S(*)(=O)=O 0.000 description 1
- 125000004354 sulfur functional group Chemical group 0.000 description 1
- YBBRCQOCSYXUOC-UHFFFAOYSA-N sulfuryl dichloride Chemical compound ClS(Cl)(=O)=O YBBRCQOCSYXUOC-UHFFFAOYSA-N 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- GJBRNHKUVLOCEB-UHFFFAOYSA-N tert-butyl benzenecarboperoxoate Chemical compound CC(C)(C)OOC(=O)C1=CC=CC=C1 GJBRNHKUVLOCEB-UHFFFAOYSA-N 0.000 description 1
- SWAXTRYEYUTSAP-UHFFFAOYSA-N tert-butyl ethaneperoxoate Chemical compound CC(=O)OOC(C)(C)C SWAXTRYEYUTSAP-UHFFFAOYSA-N 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 1
- GVIJJXMXTUZIOD-UHFFFAOYSA-N thianthrene Chemical compound C1=CC=C2SC3=CC=CC=C3SC2=C1 GVIJJXMXTUZIOD-UHFFFAOYSA-N 0.000 description 1
- VOVUARRWDCVURC-UHFFFAOYSA-N thiirane Chemical compound C1CS1 VOVUARRWDCVURC-UHFFFAOYSA-N 0.000 description 1
- 150000003553 thiiranes Chemical class 0.000 description 1
- 229940071127 thioglycolate Drugs 0.000 description 1
- CWERGRDVMFNCDR-UHFFFAOYSA-M thioglycolate(1-) Chemical compound [O-]C(=O)CS CWERGRDVMFNCDR-UHFFFAOYSA-M 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 125000005628 tolylene group Chemical group 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- QMDINFCBDRCIDY-UHFFFAOYSA-N tributyl-[(4-methylphenyl)methyl]stannane Chemical compound CCCC[Sn](CCCC)(CCCC)CC1=CC=C(C)C=C1 QMDINFCBDRCIDY-UHFFFAOYSA-N 0.000 description 1
- 150000003628 tricarboxylic acids Chemical class 0.000 description 1
- 150000004072 triols Chemical class 0.000 description 1
- 125000005580 triphenylene group Chemical group 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
- ABDKAPXRBAPSQN-UHFFFAOYSA-N veratrole Chemical compound COC1=CC=CC=C1OC ABDKAPXRBAPSQN-UHFFFAOYSA-N 0.000 description 1
- NLVXSWCKKBEXTG-UHFFFAOYSA-N vinylsulfonic acid Chemical compound OS(=O)(=O)C=C NLVXSWCKKBEXTG-UHFFFAOYSA-N 0.000 description 1
- 210000004916 vomit Anatomy 0.000 description 1
- 230000008673 vomiting Effects 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
- 229940075420 xanthine Drugs 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 125000002256 xylenyl group Chemical class C1(C(C=CC=C1)C)(C)* 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
本発明は、印刷板及び印刷回路の製造に有用な画像形成
方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an imaging method useful in the manufacture of printing plates and printed circuits.
従来のポジ画像形成方法においては、ポジホトレジスト
の固体層は揮発性有機溶媒中のホトレジスト溶液を支持
体に塗布し、次いで溶媒を蒸発させることにより形成さ
れている。この固体ホトレジスト、例えばキノンジアジ
ド部分を含むフェノールノボラック樹脂や被膜性樹脂と
キノンジアジド化合物の混合物は、次いで通常像様の透
明体を通して所定のパターンで活性輻射線に暴露され、
これにより輻射線の当った部分が現像液に溶解性となり
、他方、輻射線から遮幣されていた部分は実質的に侵さ
れない壕ま残る。この露光部分は、露光部分を溶解する
ものの未露光部分は処理が実施される期間中溶解しない
溶剤現像剤、通常アルカリ水溶液によす除去され、ポジ
画像が残る。In conventional positive imaging methods, a solid layer of positive photoresist is formed by applying a solution of the photoresist in a volatile organic solvent to a support and then evaporating the solvent. The solid photoresist, such as a phenolic novolak resin containing a quinonediazide moiety or a mixture of a coating resin and a quinonediazide compound, is then exposed to actinic radiation in a predetermined pattern, usually through an imagewise transparency;
This causes the areas exposed to the radiation to become soluble in the developer, while the areas shielded from the radiation remain essentially incorrigible. The exposed areas are removed with a solvent developer, usually an alkaline aqueous solution, which dissolves the exposed areas but does not dissolve the unexposed areas during the period of processing, leaving a positive image.
固体であって非粘着性であり、かつ像形成照射に容易な
ポジホトレジストの1−全有機溶媒を蒸発させる必要な
しに形成し得る方法が必要とされている。この様な方法
により、毒性や引火性の問題に起し、これ等の回収に費
用を必要とする溶媒の使用が避けられるであろう。1だ
、画像露光し易いホトレジストが塗布された支持体、例
えば塗布された銅被覆ラミネートの連続ベースでの製造
も容易となるであろう。There is a need for a method for forming positive photoresists that are solid, non-tacky, and amenable to imaging irradiation without the need to evaporate the 1-total organic solvent. Such a method would avoid the use of solvents which pose toxicity and flammability problems and which require expense to recover. 1. It would also be easier to manufacture on a continuous basis a support coated with a photoresist that is easy to imagewise expose, such as a coated copper-coated laminate.
欧州l特許公報AO155231には、電着により形成
した固体のポジホトレジスト層を画像露光することによ
りポジ画像を形成することが提案されている。この方法
の要件にはごく少量の有機溶剤の使用が含1れるものの
、塩形成性基を有する材料の使用が必要とされ、このだ
め、利用性に限りがある。ここに、有機溶媒の蒸発を必
要とせず、広範な利用性をもつ方法が必要とされている
。European Patent Publication AO 155231 proposes forming a positive image by imagewise exposing a solid positive photoresist layer formed by electrodeposition. Although the requirements of this process include the use of very small amounts of organic solvents, it requires the use of materials with salt-forming groups, which limits its applicability. What is needed is a method that does not require evaporation of organic solvents and has wide applicability.
従って、本発明は、
(1) 支持体に、
囚 カチオン重合可能な、又は遊離基に上り重合可能な
樹脂、
(BI CA)のための輻射線で活性化される重合開
始剤、及び
(C) 輻射線で溶解性となる成分を含む液体組成物の
層を塗布し、
(4) 前記CB)を活性化するものの前記(C)を実
質的に活性化することの々カ波長を有する輻射A/31
を前記組成物に当て、次いで所望により加熱を行ない、
液体組成物の層を固化するように前記Qすを重合し、
1ii) 前記固化された層が未纂斃領域よりも嘉島
領域が現像剤により、よシ一層溶解性となるように、前
記固化された層を所定のパターンで、段階(n)で使用
した輻射線とは異なシ、前記成分(C)を活性化する波
長を有する輻射線に轟て、そして
(iv)前記it領領域現像剤により処理して除去する
ことを特徴とする画1象形成方法を提供するものである
。Accordingly, the present invention provides: (1) a support comprising: a cationically polymerizable or free radically polymerizable resin; a radiation-activated polymerization initiator for (BI CA); ) applying a layer of a liquid composition containing a component that is soluble in radiation; (4) radiation having a wavelength that activates said CB) but substantially activates said (C); A/31
is applied to the composition, followed by heating if desired,
1ii) polymerizing the Q so as to solidify a layer of the liquid composition; 1ii) said solidifying such that the solidified layer is more soluble in developer in Kashima areas than in unfinished areas; exposing the treated layer in a predetermined pattern to radiation having a wavelength that activates said component (C), different from the radiation used in step (n), and (iv) developing said IT region. The object of the present invention is to provide a method for forming an image, which is characterized in that the image is removed by treatment with a chemical agent.
”所定のパターンで輻射線に・・・・・・当て”という
表現は、不透明部分と透明部分から成る像を有する透明
画を通して露光することと、例えばコンピュータにより
指示され画像を形成するように所定のパターン内を動く
化学線ビームを当てることの両方が含まれる。本発明方
法に使用される液体組成物は、@輻射線で活性化される
重合開始剤及び
■ 少なくとも1種の重合可能な成分(5)を有する物
質と、少なくとも1種の(Blを活性化するのとは異な
る波長の輻射線で活性化される輻射線で、溶解性となる
可能な成分(C)を有する物質との混合物、あるいは
■ 少なくとも1種の同一分子中に重合可能な成分(5
)と、(B) を活性化するのとは異なる波長の輻射線
で活性化される輻射線で溶解性となる成分(Qとを有す
る2官能基性物質、あるいは
■ 少なくとも1種の重合可能な成分(5)を有する物
質及び/又は少なくとも1種の輻射線で溶解性となる成
分(Q’を有する物質を伴なう少なくとも1種の前記2
官能基性物質を含むことができる。The expression ``applying radiation in a predetermined pattern'' refers to exposing the radiation through a transparency having an image consisting of opaque and transparent areas, and exposing radiation in a predetermined manner, e.g., as directed by a computer, to form an image. Both include applying a beam of actinic radiation that moves in a pattern. The liquid composition used in the method of the invention comprises @a radiation-activated polymerization initiator and a substance having at least one polymerizable component (5) and at least one (activating Bl). mixtures with substances having a possible component (C) that becomes soluble with radiation activated by radiation of a different wavelength than the 5
) and (B) a difunctional substance having a radiation-soluble component (Q) that is activated by radiation of a different wavelength than that which activates the component, or ■ at least one polymerizable (5) and/or at least one radiation-soluble component (at least one of the above-mentioned 2 with a substance having Q')
It can contain functional substances.
成分(C)は、(Blを活性化するよシも短波長の輻射
線で活性化することができる。この場合、段階(1)に
おける露光と段階(in)における露光は、共に紫外光
を用い、段階(iii)においてよシ短波長光を用いて
、あるいは好ましくは、第1の露光を可視スペクトルの
輻射線を用いて行ない、第2の露光を紫外線を用いて実
施することができる。Component (C) can be activated with short wavelength radiation (as well as activating Bl). In this case, the exposure in step (1) and the exposure in step (in) both involve ultraviolet light. Alternatively, the first exposure may be carried out using radiation in the visible spectrum and the second exposure using ultraviolet radiation.
あるいは(C)は、@を活性化するよりも長波長の輻射
線で活性化することもできる。このように段階(Ol)
は段階(11)で使用される輻射線よりも短がいか、又
は長い波長を有する輻射線の使用により行なうことがで
きる。Alternatively, (C) can be activated with radiation of a longer wavelength than that which activates @. Like this stage (Ol)
can be carried out by the use of radiation having a shorter or longer wavelength than the radiation used in step (11).
前記重合開始剤(8は、前記光で溶解性となる成分(C
)よシも長波長又は短波長の輻射線を吸収することがで
きる。(Blがよシ長波父で吸収する際には、成分(C
)は500nmを越える波長で輻射線を吸収しないこと
が好ましい。成分(5)として使用するのに適した遊離
基により重合される成分、即ち、基及び基の組合せは良
く知られており、エチレン性不飽和基またはエチレン性
不飽和基とチオール基の混合とすることができる。The polymerization initiator (8 is the component (C
) can also absorb long or short wavelength radiation. (When Bl absorbs at longer wavelengths, the component (C
) preferably does not absorb radiation at wavelengths exceeding 500 nm. Free radically polymerized components suitable for use as component (5), i.e. groups and combinations of groups, are well known and include ethylenically unsaturated groups or mixtures of ethylenically unsaturated and thiol groups. can do.
エチレン性不飽和基の成分を有する適当な物質は、スチ
レン、置換されたスチレン、例えば、α−メチルスチレ
ン、4−メチルスチレン及び4−ブロモスチレンのよう
なビニル置換された芳香族化合物、ビニルアセテートの
ようなビニルエステル、マレイン酸ジアリル及びフマル
酸ジメタアリルのよりなアリル化合物、2−16−0あ
るいは4−ビニルピリジン及び2−または5−ビニルピ
ロリドンのようなビニル複素環を含む。Suitable substances having a component of ethylenically unsaturated groups include styrene, substituted styrenes, vinyl substituted aromatics such as α-methylstyrene, 4-methylstyrene and 4-bromostyrene, vinyl acetate. vinyl esters such as diallyl maleate and dimethallyl fumarate, vinyl heterocycles such as 2-16-0 or 4-vinylpyridine and 2- or 5-vinylpyrrolidone.
染
好ましいエチレン性不飽和物質は、エチレン不飽和性モ
ノカルボン酸のエステルでアシ、下記式
%式%
(式中、R1は水素、塩素又は臭素原子もしくは炭素原
子数1ないし4のアルキル基、特に水素原子又はメチル
基を表わす。)
で表わされる基を有するものが好ましい。Preferred ethylenically unsaturated substances are esters of ethylenically unsaturated monocarboxylic acids, represented by the following formula (%) (wherein R1 is hydrogen, chlorine or bromine or an alkyl group having 1 to 4 carbon atoms, particularly A hydrogen atom or a methyl group is preferred.
このようなエステルとして好ましいものは、2−メトキ
シエタノール、2−ンクロエタノール、フルフリルアル
コール、クリコール、及ヒシクロヘキサノールのような
1価アルコールのアクリレート及び2−置換アクリレー
ト、及びブタンジオール、ペンタエリスリトール、ジペ
ンタエリスリトール、トリー又はテトラエチレングリコ
ール、トリメチロールプロパン、及びグリセロールのよ
うな多価アルコールの完全又は部分エステルである。ア
ルキレンオキサイド、特に酸化エチレン又は酸化プロピ
レンと、アクリル酸との反応により形成されるエステル
、代表的には2−ヒドロキシエチル及び2−ヒドロキシ
グロビルアクリレート及びメタアクリレートもまた適当
である。1以上のグリンジル基を含む化合物、特に、1
価又は多価アルコールまチル、もしくはN−グリンジル
ヒダントインとアクリル又はメタアクリル酸との反応に
より形成されるエステルも使用するととができる。他の
適当な化合物は、ジエボキサイドと、ヒドロキシアルキ
ルアクリレート又はメタアクリレートと、飽和又は不飽
和ジカルボン酸無水物、例えばコハク酸、マレイン酸又
はフタル酸の無水物との付加物との反応により形成され
るエステルである。Preferred such esters are acrylates and 2-substituted acrylates of monohydric alcohols such as 2-methoxyethanol, 2-chloroethanol, furfuryl alcohol, glycol, and hiscyclohexanol, and butanediol, pentaerythritol, Full or partial esters of polyhydric alcohols such as dipentaerythritol, tri- or tetraethylene glycol, trimethylolpropane, and glycerol. Also suitable are esters formed by the reaction of alkylene oxides, especially ethylene oxide or propylene oxide, with acrylic acid, typically 2-hydroxyethyl and 2-hydroxyglobyl acrylates and methacrylates. Compounds containing one or more Grindyl groups, especially one
Esters formed by reaction of hydrohydric or polyhydric alcohols or N-grindylhydantoin with acrylic or methacrylic acid may also be used. Other suitable compounds are formed by the reaction of dieboxides with adducts of hydroxyalkyl acrylates or methacrylates with saturated or unsaturated dicarboxylic anhydrides, such as succinic, maleic or phthalic anhydrides. It's ester.
代表的なこの様な化合物は、1.4−ビス(2−ヒドロ
キン−3−アクリロイルオキシプロビル)ブタン、ビス
フェノール又はフェノールホルムアルデヒドノボラック
のポリ(2−ヒドロキシ−6−アクリロイルオキシプロ
ビル)エーテル、2.2−ビス(4−(2−ヒドロキシ
−5−(2−アクリロイルオキンエトキン)スクシニル
オキンブロボキシ)フェニル)フロパン、ネオペンチル
ジアクリレート、トリメチロールグロバントリサクリレ
ート、ペンタエリスリトール、テトラアクリレート、ビ
ス(2−ヒドロキシ−6−アクリロイルオキシプロビル
)アジペート及びこれ等の対応するメタアクリレートを
含む。Representative such compounds include poly(2-hydroxy-6-acryloyloxyprobyl) ether of 1,4-bis(2-hydroquine-3-acryloyloxyprobyl)butane, bisphenol or phenol formaldehyde novolak, 2 .2-bis(4-(2-hydroxy-5-(2-acryloyloxyneethquin)succinyloquinebroboxy)phenyl)furopane, neopentyl diacrylate, trimethylolgloban trisacrylate, pentaerythritol, tetra acrylate, bis(2-hydroxy-6-acryloyloxyprobyl) adipate and their corresponding methacrylates.
リル酸、1−(2−ヒドロキシ−3−アクリロイルオキ
シプロポキシ)−ブタン、−オクタン及ヒーテカン、2
−ヒドロキシ−6−アクリロイルオキジプロピルプロピ
オネート、6−フェノキン−2−ヒドロキンプロピルア
クリレート、2−ヒトキンエチルアクリレート、2−ヒ
ドロキシプロピルアクリレート及びこれ等の対応するメ
タアクリレートの様なモノアクリレート及びモノメタア
クリレートである。Lylic acid, 1-(2-hydroxy-3-acryloyloxypropoxy)-butane, -octane and heattecan, 2
- monoacrylates such as hydroxy-6-acryloyl oxidipropyl propionate, 6-phenoquine-2-hydroquine propyl acrylate, 2-hydroxypropyl acrylate, 2-hydroxypropyl acrylate and their corresponding methacrylates; It is monomethacrylate.
多官能基件のアクリレート及びメタアクリレートは一般
的に1官能基性のアクリレート及びメタアクリレートと
共に使用される。Polyfunctional acrylates and methacrylates are generally used together with monofunctional acrylates and methacrylates.
ポリチオールと混合され、成分(A)を供給するために
使用されるポリエンは、下
記式%式%
(弐■、■中、基R2は、同一でも異なっていても良く
、水素、フッ素及び塩素原子及びフリル、チェニル、ピ
リジル、フェニル、置換されたフェニル、ベンジル及び
置換されたベンジル、アルキル、置換されたアルキル、
アルコキン及び炭素原子数1ないし9の置換されたアル
コキン、シクロアルキル及び炭素原子数3ないし8の置
換されたシクロアルキル基から選ばれ、置換基が、塩素
及びフッ素原子ヨ及びアセトキシ、ニトロ、アセタミド
、フェニル、ベンジル、アルキル、アルコキシ及びシク
ロアルキル基カラ選ばれ、
rが1ないし9の整数で表わされ、
Xが基−NR2−,−0−又は−84−表わす。)で表
わされる基を少なくとも2個有するものを含む。このポ
リエンは、通常、50ないし5000の分子量を有し、
フリーラジカル重合反応にあずかる能力を有する2以上
のエチレン結合を含む。好筐しいポリエンは、1モルの
トリレンジインシアネートと2モルのトリメチロールプ
ロパンのジアルケニルエーテルとの反応生成物、1モル
の高分子ジインシアネートと2モルのアリルアルコール
の反応生成物、1モルのポリエチレンクリコールと2モ
ルのトリレン−2,4−ジインシアネート及び2モルの
アリルアルコールとの反応生成物、ポリインブレン、ポ
リブタジェン及び不飽和が主として分子の主鎖内で起っ
ている不飽和ポリマー、隣接する不飽和基と共役する反
応性炭素−炭素不飽和結合を有する化合物、例えば約7
50の分子te有するポリエチレンエーテルクリコール
ジアクリレート、約1175の分子量を有するポリテト
ラメチレンエーテルグリコールジメタクリレート、トリ
メチロールプロパンと20モルの酸化エチレンとの反応
生成物のトリアクリレート、及びボリエポキシドとアミ
ン、アルコール、チオアルコールもしくは脂肪族不飽和
を有する酸との反応生成物、例えばビスフェノールAジ
グリシジルエーテルと了りルアミン又はジアリルアミン
との反応物を含む。特に好ましいポリエンは2以上のア
リル又はメタリル基により置換されたフェノール、籍に
ビスフェノールである。The polyene mixed with polythiol and used to supply component (A) has the following formula % formula % (in (2) and (2), the groups R2 may be the same or different and contain hydrogen, fluorine and chlorine atoms. and furyl, chenyl, pyridyl, phenyl, substituted phenyl, benzyl and substituted benzyl, alkyl, substituted alkyl,
selected from alkokenes and substituted alkokenes having 1 to 9 carbon atoms, cycloalkyl and substituted cycloalkyl groups having 3 to 8 carbon atoms, in which the substituents are chlorine and fluorine atoms, acetoxy, nitro, acetamide, phenyl, benzyl, alkyl, alkoxy and cycloalkyl groups, r is an integer from 1 to 9, and X is -NR2-, -0- or -84-. ) includes those having at least two groups represented by. This polyene usually has a molecular weight of 50 to 5000,
Contains two or more ethylene bonds that have the ability to participate in free radical polymerization reactions. Preferred polyenes include the reaction product of 1 mol of tolylene diincyanate and 2 mol of dialkenyl ether of trimethylolpropane, the reaction product of 1 mol of polymeric diincyanate and 2 mol of allyl alcohol, 1 mol reaction product of polyethylene glycol with 2 moles of tolylene-2,4-diincyanate and 2 moles of allyl alcohol, polyimblene, polybutadiene and unsaturated polymers in which the unsaturation occurs primarily within the backbone of the molecule. , a compound having a reactive carbon-carbon unsaturated bond conjugated with an adjacent unsaturated group, e.g.
polyethylene ether glycol diacrylate with a molecular weight of 50, polytetramethylene ether glycol dimethacrylate with a molecular weight of about 1175, triacrylate of the reaction product of trimethylolpropane with 20 moles of ethylene oxide, and polyepoxide with an amine, Includes reaction products with alcohols, thioalcohols or acids with aliphatic unsaturation, such as the reaction products of bisphenol A diglycidyl ether with triamine or diallylamine. Particularly preferred polyenes are phenols, particularly bisphenols, substituted with two or more allyl or methallyl groups.
これ等のポリエンと混合され、部分(8)として使用す
ることのできるポリチオールは、下記一般式
%式%
(式中、R3は、反応性の炭素−炭素の不飽和を含1な
い多価有機基を表わし、tは2以上を表わす。)
で表わされる。Polythiols that can be mixed with these polyenes and used as moiety (8) are of the general formula % (wherein R3 is a polyvalent organic compound containing no reactive carbon-carbon unsaturation). (t represents 2 or more).
好壕しくは、有機基R3は、炭素原子数2ないし10の
脂肪族鎖、炭素原子数6ないし10のアリーレン基、炭
素原子数7ないし16のアルカリーレン基、炭素原子数
5ないし10のシクロアルキレン基、又は炭素原子数6
ないし16のシクロアルキルアルキレン基であって、い
ずれも置換したシ、アルキレン鎖に酸素原子又はエステ
ル基を含んでいても差支えない。特に好ましいポリチオ
ールの例は、エチレングリコールビス(チオグリコレー
ト)、エチレングリコールビス(β−メルカプトプロピ
オネート)1、す、<fo−ヤブ。パフ )−1臆(ヶ
オヶリメ吐ト)、トリメチロールプロパン、トリス(β
−メルカプトプロピオネート)、ペンタエリスリトール
テトラキス(チオグリコレート)、ペンタエリスリトー
ルテトラキス(β−メルカプトプロピオネート)及びチ
オグリコレート、ポリプロピレンエーテルクリコールビ
ス(β−メルカプトプロピオネート)及びグリセロール
から誘導したポリオキシプロピレントリオールノ3−メ
ルカプト−2−ヒドロキシグロビルエーテルの様なポリ
オキンアルキレングリコール及びトリオールのβ−メル
カプトプロピオネート及び3−メルカプト−2−ヒドロ
キシグロビルエーテルである。Preferably, the organic group R3 is an aliphatic chain having 2 to 10 carbon atoms, an arylene group having 6 to 10 carbon atoms, an alkarylene group having 7 to 16 carbon atoms, a cyclocarbon group having 5 to 10 carbon atoms. Alkylene group or 6 carbon atoms
to 16 cycloalkylalkylene groups, any of which may contain an oxygen atom or an ester group in the substituted cycloalkylene chain. Examples of particularly preferred polythiols are ethylene glycol bis(thioglycolate), ethylene glycol bis(β-mercaptopropionate), and <fo-yab. Puff )-1 (Gaogarime vomit), Trimethylolpropane, Tris (β
-mercaptopropionate), pentaerythritol tetrakis (thioglycolate), pentaerythritol tetrakis (β-mercaptopropionate) and thioglycolate, polypropylene ether glycol bis(β-mercaptopropionate) and glycerol. β-mercaptopropionate and 3-mercapto-2-hydroxyglobyl ether of polyoxypropylene triolno-3-mercapto-2-hydroxyglobyl ether of polyoquine alkylene glycols and triols.
二ン(ene ) 基: チオール基のモル比は、輻
射線に暴露することで固体の生成物を与えるように選ば
れ、1:0.5−2の範囲内が好ましい。The molar ratio of ene groups:thiol groups is chosen to give a solid product on exposure to radiation, preferably in the range 1:0.5-2.
(5)が遊離基により重合可能な成分の場合に使用のた
めの適当な重合開始剤は可視光又は紫外線に対して感光
性であろう。Suitable polymerization initiators for use when (5) is a free radically polymerizable component will be sensitive to visible or ultraviolet light.
そのような開始剤は公知であり、ベンゾインエーテル、
アシロインエーテル、ハロケン化アルキルもしくはアリ
ール誘導体、芳香族カルボニル誘導体、メタロセン、第
1VA族有機金属化合物と光還元染料の混合物、キノン
と脂脂族α炭素原子に結合した水素原子を有する脂肪族
アミンとの混合物、所望により上記で記載したアミン、
3−ケトクマリン、アシルホスフィンオキンド、金属カ
ルボニルと混合した脂肪族ジカルボニル化合物、並びに
光還元染料と還元剤の混合物を包含する。好ましい輻射
線活性化触媒(13)は、脂肪族α炭素原子に結合した
水素原子を有スる第三アミンとカンファーキノンであり
、例えばビス(4−ジメチルアミノ)ベンゾフェノン及
びトリエタノールアミン、ビアセチル、ジマンガンデカ
カルボニル、ベンジルジメチルケタール、インブチルベ
ンゾインエーテル、2゜2.2−)サクロロー4′−第
三プチルアセトフェノン、シェドキンアセトフェノン;
3位に炭素環状もしくは複素環式芳香族ケトン基を有す
るクマリン、例えば3−ベンゾイル−7−メドキシクマ
リンもしくは3−(4−7アノベンゾイル)−5,7−
ジプロボキゾクマリン;光還元性染料、典型的にはメチ
レンブルーもしくはローズベンガルと例えばトリメチル
ベンジルスタナン、トリブチルベンジルスタナン、トリ
ブチル−4−メチルベンジルスタナンもしくはジブチル
ジベンジルスタナンのようなスタナンとの混合物、ナト
リウムベンゼンスルフィネートもしくはベンゼンスルフ
ィン酸のような電子供与体と光還元性染料との混合物、
及びビス(ピ(ピメチルンクロペンタジエニル)ヒス(
シグマへキシルオキシテトラフルオロフェニル)チタニ
ウム(rV)のようなチタンメタロセンである。Such initiators are known and include benzoin ether,
Acilloin ethers, halokenated alkyl or aryl derivatives, aromatic carbonyl derivatives, metallocenes, mixtures of Group 1 VA organometallic compounds and photoreductive dyes, quinones and aliphatic amines with a hydrogen atom bonded to an aliphatic alpha carbon atom; a mixture of, optionally an amine as described above,
Includes 3-ketocoumarins, acylphosphine oquindos, aliphatic dicarbonyl compounds mixed with metal carbonyls, and mixtures of photoreductive dyes and reducing agents. Preferred radiation-activated catalysts (13) are tertiary amines and camphorquinones having a hydrogen atom attached to an aliphatic alpha carbon atom, such as bis(4-dimethylamino)benzophenone and triethanolamine, biacetyl, Dimangane decacarbonyl, benzyl dimethyl ketal, inbutyl benzoin ether, 2゜2.2-)sacrolo 4'-tert-butylacetophenone, Shedquin acetophenone;
Coumarins having a carbocyclic or heteroaromatic ketone group in the 3-position, such as 3-benzoyl-7-medoxycoumarin or 3-(4-7anobenzoyl)-5,7-
Diproboxyzocoumarin; a photoreducible dye, typically methylene blue or rose bengal and a stannane such as trimethylbenzylstannane, tributylbenzylstannane, tributyl-4-methylbenzylstannane or dibutyldibenzylstannane. a mixture of an electron donor such as sodium benzenesulfinate or benzenesulfinic acid and a photoreducible dye;
and bis(pi(pimethylclopentadienyl)his(
titanium metallocenes such as sigma hexyloxytetrafluorophenyl) titanium (rV).
開始剤(B)がメタロセンもしくは第■A族有機金属化
合物と光還元染料の混合物である記述された化合物はそ
れ自体新しい。それ数本発明は、(5) 遊離基により
重合可能な成分、(B) メタロセンもしくは第1V
A族有機金属化合物と光還元染料の混合物から成る(5
)のための輻射線で活性化される重合開始剤、及び(C
) 輻射線で可溶化される成
分かもなり、前記成1分(C)は、前記(B)が活性化
可能な波長とは異なる波長の輻射線で活性化可能である
記述された方法に使用するのに適当な新しい組成物を提
供するものである。The compounds described, in which the initiator (B) is a mixture of a metallocene or a Group IA organometallic compound and a photoreducible dye, are new in themselves. (5) a component polymerizable by free radicals; (B) a metallocene or
Consisting of a mixture of group A organometallic compounds and photoreducible dyes (5
) and a radiation-activated polymerization initiator for (C
) It may also be a radiation-solubilized component, said component (C) used in the described method being activatable with radiation at a wavelength different from that at which said (B) is activatable. The present invention provides new compositions suitable for
前記新組成物中で使用される好ましいメタロセンは次式
:
(基R4はそれぞれ独立して、場合により置換したンク
ロベンタシエニルもL<はインデニル基から選ばれ、ま
たはそれらは−緒になって炭素原子数2ないし12のア
ルキリデン基、環の中に炭素原子数5ないし7を有する
シクロアルキリデン基、基−3i(R7)、−もしくは
−3n(R1)、、またけ場合により置換した次式
(XIはメチレン基、エチレン基、もしくは1゜3−プ
ロピレン基を表わす)で表わされる基を形成し、
R5は6員の芳香族炭素Rまたは5−もしくは6員の芳
香族複素環を表わすが該環は金属−炭素原子間結合に対
する2つのオルト位の少なくともひとつがフッ素原子に
よって置換されているか、場合によっては環が更に置換
されていてもよい、もしくは
R5とR6が基−Q−Y−Q−を表わし、Qがそれぞれ
2つの結合がQ−Y結合に対してオルト位にある5−も
しくid′6負の芳香族炭素環もしくは芳香族複素環を
表わし、及びQ−Y結合に対してそれぞれのメタ位がフ
ッ素原子によって置換され、基Qは場合により更に置換
され、
yFiメチレン基、炭素原子数2な込し12を有するア
ルキリデン基、環中で炭素原子数5ないし7を有するシ
クロアルキルキリデン基、直接結合、基N)1,7、酸
素原子もしくは硫黄原子、または基−5O2−1基−C
O−1基−3i(R))2−を表わし、
R6は置換されてもよいアルキニル基もしくはフェニル
アルキニル基、アジド基もしくは7アノ基、または−5
i(R7)2−もしくは−3n(R’)2−で表わされ
る基、もしくは基R5と同じ意味を有し、並びに
R7は炭素原子数1ないし12のアルキル基、炭素原子
数5カいし12のシクロアルキル基、炭素原子数6なり
し16のアリール基もしくは炭素原子数7ないし16の
アルアルキル基を表わす)で表わされるチタノセンでお
る。Preferred metallocenes used in said new compositions are of the following formula: (wherein each group R4 is independently selected from the group R<4, optionally substituted ncrobentacyenyl and L< is selected from indenyl groups, or they are taken together) C2 -C12 alkylidene groups, cycloalkylidene groups having 5 -7 carbon atoms in the ring, -3i (R7), - or -3n (R1), optionally substituted (XI represents a methylene group, an ethylene group, or a 1°3-propylene group), and R5 represents a 6-membered aromatic carbon R or a 5- or 6-membered aromatic heterocycle; In the ring, at least one of the two positions ortho to the metal-carbon bond is substituted with a fluorine atom, or the ring may be further substituted depending on the case, or R5 and R6 are a group -Q-Y- Q- represents a 5- or id'6 negative aromatic carbocycle or aromatic heterocycle in which the two bonds are ortho to the Q-Y bond, and whereas each meta position is substituted by a fluorine atom, the group Q is optionally further substituted, yFi methylene group, alkylidene group having 2 up to 12 carbon atoms, having 5 to 7 carbon atoms in the ring Cycloalkylkylidene group, direct bond, group N)1,7, oxygen atom or sulfur atom, or group -5O2-1 group -C
O-1 group -3i(R))2-, R6 is an optionally substituted alkynyl group or phenylalkynyl group, an azide group or a 7-ano group, or -5
a group represented by i(R7)2- or -3n(R')2-, or has the same meaning as the group R5, and R7 is an alkyl group having 1 to 12 carbon atoms, 5 to 12 carbon atoms; cycloalkyl group, aryl group having 6 to 16 carbon atoms, or aralkyl group having 7 to 16 carbon atoms).
基R,4は同一であるのが好ましい。R4の為の好まし
い置換基の例は、直鎖もしくは枝分れしたアルキル基、
アルコキシ基及び好ましくは炭素原子数が18までのア
ルケニル基、とシわけ炭素原子数が12までで、最も好
筐しくは6までで、例としてはメチル基、エチル基、プ
ロピル基、イノプロピル基、n−ブチル基、第三ブチル
基、ペンチル基、ヘキシル基、オクチル基、デシル基、
ドデシル基、テトラデシル基、ヘキサデシル基、オクタ
デシル基、及び対応するアルケニル基及ヒアルコキシ基
;シクロアルキル基及び好ましくは環に炭素原子数5な
いし8を含有するシクロアルケニル基、例エバシクロペ
ンチル基、シクロヘキシル基、シクロへブチル基、メチ
ルシクロベンチル基及びメチルシクロヘキシル基;好ま
しくは炭素原子数6ないし16のアリール基及び好まし
くは炭素原子数7ないし16のアラルキル基、例えばフ
ェニル基、ナフチル基、ピフェニル基、ベンジル基及び
フェニルエチル基;ニトロ基、ハロゲンi子、好tしく
はフッ素原子、塩素原子及び臭素原子、そしてまたアミ
ン基、直鎖もしくは枝分れした炭素原子数1ないし12
のアルキル基、好1しくは炭素原子数1ないしろ、とり
わけメチル基もしくはエチル基またはフェニル基及びベ
ンジル基、これ等のアミノ基は4級化もでき、特に好ま
しくは炭素原子数1ないし12が好ましく、中でもハロ
ゲン化メチル基もしくはハロゲン化エチル基が好ましい
直鎖もしくは枝分れしたハロゲン化アルキル基;直鎖も
しくは枝分れ鎖アミノアルキル基、好ましくはとりわけ
ハロゲン化アルキル基で、4級化してもより第三アミノ
アルキル基、及びそのアミノアルキル基中のアルキレン
基が直鎖もしくは枝分れ鎖であり炭素原子数1なりし1
2が好ましく、炭素原子数1ないし6が最も好ましく、
及びとりわけ好1しくはα−枝分れ鎖炭素原子数1ない
し12のアルキル基を含むものである。Preferably, the radicals R,4 are identical. Examples of preferred substituents for R4 are straight-chain or branched alkyl groups,
Alkoxy groups and preferably alkenyl groups having up to 18 carbon atoms, particularly up to 12 carbon atoms, most preferably up to 6, such as methyl, ethyl, propyl, inopropyl, n-butyl group, tert-butyl group, pentyl group, hexyl group, octyl group, decyl group,
dodecyl, tetradecyl, hexadecyl, octadecyl and the corresponding alkenyl and hyalkoxy groups; cycloalkyl and preferably cycloalkenyl groups containing 5 to 8 carbon atoms in the ring, e.g. evacyclopentyl, cyclohexyl, cyclohebutyl, methylcyclobentyl and methylcyclohexyl; preferably C6 -C16 aryl and preferably C7 -C16 aralkyl, such as phenyl, naphthyl, piphenyl, benzyl and phenylethyl groups; nitro groups, halogen atoms, preferably fluorine, chlorine and bromine atoms, and also amine groups, straight-chain or branched, having 1 to 12 carbon atoms
The alkyl groups, preferably having 1 to 1 carbon atoms, but especially the methyl or ethyl groups or the phenyl and benzyl groups, such amino groups can also be quaternized, particularly preferably having 1 to 12 carbon atoms. Straight chain or branched halogenated alkyl groups, preferably halogenated methyl groups or halogenated ethyl groups; straight chain or branched chain aminoalkyl groups, preferably especially halogenated alkyl groups, quaternized More preferably, a tertiary aminoalkyl group and an alkylene group in the aminoalkyl group are straight or branched and have 1 carbon atom.
2 is preferred, and 1 to 6 carbon atoms are most preferred;
and especially preferably those containing α-branched C1 -C12 alkyl groups.
基R4は炭素原子数1ないし5の置換基を含有してもよ
いがひとつの置換基を有するのが好ましい。両方の置換
基R4はンクロペンタジエニルO゛基もしくはメチルシ
クロペンタジェニルO基が好ましい。The radical R4 may contain substituents having 1 to 5 carbon atoms, but preferably has one substituent. Both substituents R4 are preferably cyclopentadienyl O' groups or methylcyclopentadienyl O groups.
アルキリデン基Xi及びYは炭素原子数2ないし6であ
るのが好筐しい。アルキリデン基及びンクロアルキリデ
ン基XI及びYの例としては、エチリデン基、2.2−
グロピリデン基、ブチリテン基、ヘキシリデン基、フェ
ニルメチレン基、ジフェニル−メチレン基、シクロペン
チリデン基、及びンクロヘキンリデン基である。XIは
メチリレン基が最も好ましい。アルキル基としてR7は
、炭素原子数1ないし6であるのが好ましく、例えばメ
チル基、エチル基、プロピル基、ブチル基もしくはヘキ
ンル基である;ンクロアルキル基としてのH,?はンク
ロベンチル基もしくはンクロヘキンル基が好ましい:及
びアリール基としてはフェニル基が好ましい;及びアル
アルキル基としてはベンジル基が好ましい。Preferably, the alkylidene radicals Xi and Y have 2 to 6 carbon atoms. Examples of alkylidene groups and cycloalkylidene groups XI and Y include ethylidene groups, 2.2-
They are a glopylidene group, a butylidene group, a hexylidene group, a phenylmethylene group, a diphenyl-methylene group, a cyclopentylidene group, and a cyclohequinylidene group. Most preferably, XI is a methylylene group. As an alkyl group, R7 preferably has 1 to 6 carbon atoms, for example methyl, ethyl, propyl, butyl or hekynyl; H as an chloroalkyl group, ? Preferably, the aryl group is a phenyl group; and the aralkyl group is preferably a benzyl group.
R5は両方のオルト位がフッ素原子によって置換されて
いるのが好捷しい。Preferably, R5 is substituted with fluorine atoms at both ortho positions.
芳香族炭素環及びフッ素原子置換環としてのR6はイン
デン基、インダン基、フルオレン基、ナフタレン基及び
好ましくはフェニル基である、例tハ4 、6− ジフ
ルオロインデン−5−イル基、5.7−ジフルオロイン
デン−6−イル基、2.4−ジフルオロフルオレン−3
−イル基、1.3−ジフルオロナフト−2−イル基及び
好11、(はz、6−シフルオロフエンー1−イル基で
ある。R6 as an aromatic carbocyclic ring and a fluorine-substituted ring is an indene group, an indane group, a fluorene group, a naphthalene group and preferably a phenyl group, Example t-4, 6-difluoroinden-5-yl group, 5.7 -difluoroinden-6-yl group, 2,4-difluorofluorene-3
-yl group, 1,3-difluoronaphth-2-yl group and 11, (z, 6-cyfluorophen-1-yl group).
複素環式芳香族5員環としてl(,5は1個のへテロ原
子を有し、及び6員環としては1もしくは2個のへテロ
原子を有するのが好ましい。2個のフッ素原子で置換さ
れているそのような環の例は、2.4−ジフルオロピロ
ル−6−イル基、2.4−ジフルオロフルー3−イル基
、2.4−ジフルオロチオフェン−3−イルM、2 、
4−ジフルオロピリド−3−イル基、3.5−ジフルオ
ロピリド−4−イル基及び4.6−シフルオロピリミド
ー5−イル基である。As a 5-membered heteroaromatic ring, l(, 5 preferably has one heteroatom, and as a 6-membered ring it preferably has 1 or 2 heteroatoms. With 2 fluorine atoms Examples of such substituted rings are 2,4-difluoropyrrol-6-yl, 2,4-difluoroflu-3-yl, 2,4-difluorothiophen-3-yl M,2,
They are 4-difluoropyrid-3-yl group, 3.5-difluoropyrid-4-yl group and 4.6-cyfluoropyrimid-5-yl group.
R5及びR6が一緒になって表わす式−Q−Y−Q−で
表わされる基としては後記式:
(式中、
Eは一〇−、−S−もしくは−NH−を表わす。Yはメ
チレン基、エチリデン基、2.2=プロピリデン基、直
接結合もしくは一〇−が好ましい。)で表わされる基で
ある。The group represented by the formula -Q-Y-Q- represented by R5 and R6 together is the following formula: (In the formula, E represents 10-, -S- or -NH-. Y is a methylene group , ethylidene group, 2.2=propylidene group, direct bond or 10- is preferred).
基R5及び基−Q−Y−Q−中の基Qは部分的に、もし
くは完全に更に基によって置換することができる。好ま
しい基は例えば、直鎖もしくは枝分れしたアルキル基又
はアルコキシ基、それぞれ炭素原子数1ないし18が好
ましく、炭素原子数1ないし6が最も好ましく、例えば
メチル基、エチル基、グロビル基、ブチル基、ペンチル
基、ヘキンル基及びそれに対応するアルコキシ基であり
、メチル基、メトキシ基、ヘキンルオキ7基が好ましい
;環中に、好ましくは炭素原子5ないし6を有するンク
ロアルキル基、好1しくは炭素原子数6ないし16のア
リール基及び好瞥しくは炭素原子ei7ないし16のア
ルアルキル基、例えばンクロベンチル基、ンクロヘキゾ
ル基、フェニル基もしくはベンジル基:ヒドロキシル基
、カルボキシル基、シアノ基、フッ素原子、塩素原子も
しくは臭素原子のようなハロゲン原子及びアミノ基、た
とえば塩化メチル基、臭化メチル基、もしくはヨウ化メ
チル基のようなハロゲン化アルキル基、例えばメチルア
ミン基、エチルアミノ基、ジメチルアミノ基、ジエチル
アミノ基、ピロリジル基、ピペリジル基、ピペラジル基
、モルホリル基、N−メチルピペラジル基と四級化して
もよい第三アミノ基が好ましい。;好ましくは炭素原子
数1ないし18、最も好1しくはアルコキシ部分中に炭
素原子数1ないし6を有するアルコキシカルボニル基、
アミン基中にひとつもしくは2つの炭素原子数1ないし
12のアルキル基を有するアミノカルボニル基、または
複累環アミン、例えばピロリジン基、ピペリジン基、ピ
ペラジ7基、N−メチルビペラジン基及びモルホリン基
を含有するアミノカルボニル基;アミノアルキル基、特
に炭素原子数1ないし6のアルキル基を含むのが好甘し
く、アルキルハロゲン化物と四級化してもよい第三アミ
ノアルキル基、最も好ましくは炭素原子数1ないし6の
アルキル基によって置換してもよい第三アミノアルキル
基、例えばジメチルアミノメチル基及びヨウ化トリメチ
ルアンモニウムメチルである。The group R5 and the group Q in the group -Q-Y-Q- can be partially or completely substituted by further groups. Preferred groups are, for example, straight-chain or branched alkyl or alkoxy groups, each preferably having 1 to 18 carbon atoms, most preferably having 1 to 6 carbon atoms, such as methyl, ethyl, globyl, butyl. , pentyl group, hekynyl group and the corresponding alkoxy group, preferably methyl group, methoxy group, hekynluo group; cycloalkyl group preferably having 5 to 6 carbon atoms in the ring, preferably 1 carbon atom Aryl groups of 6 to 16 and preferably aralkyl groups of ei 7 to 16 carbon atoms, such as ncrobentyl, nclohexol, phenyl or benzyl: hydroxyl, carboxyl, cyano, fluorine, chlorine or halogen atoms such as bromine atoms and amino groups, such as methyl chloride, methyl bromide, or halogenated alkyl groups such as methyl iodide, such as methylamine, ethylamino, dimethylamino, diethylamino, A tertiary amino group which may be quaternized with a pyrrolidyl group, piperidyl group, piperazyl group, morpholyl group, or N-methylpiperazyl group is preferred. ; an alkoxycarbonyl group preferably having 1 to 18 carbon atoms, most preferably having 1 to 6 carbon atoms in the alkoxy moiety;
an aminocarbonyl group having one or two C1-C12 alkyl groups in the amine group, or multicyclic amines, such as pyrrolidine, piperidine, piperazine, N-methylbiperazine and morpholine groups; Aminocarbonyl group; preferably contains an aminoalkyl group, especially an alkyl group having 1 to 6 carbon atoms, and a tertiary aminoalkyl group which may be quaternized with an alkyl halide, most preferably an alkyl group having 1 to 6 carbon atoms; Tertiary aminoalkyl groups which may be substituted by 6 alkyl groups, such as dimethylaminomethyl group and trimethylammoniummethyl iodide.
アルキニル基としてR6は例えば2−ブチニル基及び好
ましくはプロパギル基である。As an alkynyl group, R6 is, for example, a 2-butynyl group and preferably a propargyl group.
フェニルアルキニル基としてR6のための置換基の例は
、フッ素原子、塩素原子、臭素原子のようなハロゲン原
子、炭素原子数1ないし6のアルキル基及び炭素原子数
1ないしるのアルコキシ基、カルボキシル基、水酸基及
びシアノ基である。R6は好筐しくは几5と同じ意味を
有する。Examples of substituents for R6 as phenylalkynyl groups include halogen atoms such as fluorine, chlorine, and bromine, alkyl groups having 1 to 6 carbon atoms, alkoxy groups having 1 to 6 carbon atoms, and carboxyl groups. , hydroxyl group and cyano group. R6 preferably has the same meaning as 几5.
本発明の好ましい実施態様において、式V中のR5及び
1(16は未置換もしくは置換2.6−ジフルオロフェ
ン−1−イルもしくはR5及び凡6は一緒に次式:
(式中、
Yは前記の意味を有し、及び特に直接結合、基−CH2
−もしくは基−0−を表わす)で表わされる基を形成す
る。In a preferred embodiment of the invention, R5 and 1 in formula V (16 is unsubstituted or substituted 2,6-difluorophen-1-yl or R5 and 6 together are of the formula: and in particular a direct bond, the group -CH2
- or a group -0-).
式Vで表わされるメタロセンの好ましい基は、それぞれ
R4が炭素原子数1ないし4のアルキル基、好ましくは
メチル基によって置換されたπ−シクロペンタジェニル
基金表わし、各R5とR5が次式:
(式中、
Ql、Q2及びQ3はそれぞれ独立して水素原子、フッ
素原子、塩素原子、臭素原子、第三アミノ基、好ましく
はモルホリノ基、もしくはアルコキシ基、好ましくはメ
トキシ基もしくはヘキンルオキ7基を表わす。)で表わ
される基である化合物からなるものである。アミノ基も
しくはアルコキシ基は遊離結合(free bond
)に対してバラ位に付加しているのが好ましい。好まし
い副基は、それぞれR4がπ−メチルンクロペンタジエ
ニルモシくはπ−7クロベンタジエニル基を表わし、そ
れぞれR5及びR6はQl及びQ3が水素原子、フッ素
原子、塩累原子もしくは実業原子を表わし、Qlは水素
原子、フッ素原−子もしくはアルコキシ基を表わす式■
aの基を表わす式■で表わされるメタロセンからなる。A preferred group of metallocenes of formula V is a π-cyclopentagenyl group in which each R4 is substituted by a C1 -C4 alkyl group, preferably a methyl group, and each R5 and R5 is of the formula: In the formula, Ql, Q2 and Q3 each independently represent a hydrogen atom, a fluorine atom, a chlorine atom, a bromine atom, a tertiary amino group, preferably a morpholino group, or an alkoxy group, preferably a methoxy group or a hekylene group. ) It consists of a compound that is a group represented by An amino group or an alkoxy group is a free bond.
), it is preferable to add it at the distal position. Preferred subgroups include R4 representing a π-methylchlorpentadienyl mosyl group or a π-7 clobentadienyl group, and R5 and R6 each representing a hydrogen atom, a fluorine atom, a salt atom, or a hydrogen atom, and a hydrogen atom, a fluorine atom, a salt atom, or an industrial atom. , and Ql is a formula ■ representing a hydrogen atom, a fluorine atom, or an alkoxy group.
It consists of a metallocene represented by the formula (■) representing the group a.
好ましくけ、Q”及びQ3はそれぞれ独立して水素原子
、フッ素原子を表わし、Qlはフッ素原子もしくはヘキ
ンルオキ7基を表わす。Preferably, Q'' and Q3 each independently represent a hydrogen atom or a fluorine atom, and Ql represents a fluorine atom or a hekynluoki7 group.
式Vで表わされる化合物、及びそれらの製法は、米国特
許明細書第4590287号に記述されている。Compounds of formula V and methods for their preparation are described in US Pat. No. 4,590,287.
新組成物中に使用される好まし込第■A族の有機金属化
合物は、次式■。The preferable Group ⅠA organometallic compound used in the new composition has the following formula ①.
(式中、
R8は炭素原子数1なlnl、4のアルキル基または炭
素原子数2ないし4のアルケニル基もしくはアルキニル
基を表わし、及び
R9は水素原子またはへロゲン原子もしくは炭素原子数
1な込し4のアルキル基またはアルコキシ基を表わす。(In the formula, R8 represents an alkyl group having 1 or 4 carbon atoms, or an alkenyl group or alkynyl group having 2 to 4 carbon atoms, and R9 represents a hydrogen atom, a halogen atom, or an alkyl group having 1 carbon atom. 4 represents an alkyl group or an alkoxy group.
)で表わされるオルガノスタナンである。) is an organostannane represented by
式■で表わされる好ましい化合物は、R8が炭素原子数
1な込し4のアルキル基を表わし、及びR9が水素原子
もしくは炭素原子数1ないし4のアルキル基を表わす化
合物である。Preferred compounds represented by the formula (3) are those in which R8 represents an alkyl group having 1 to 4 carbon atoms, and R9 represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms.
これらのオルガノスタナンは、不活性溶媒中でトリアル
キル錫ハライドとペンジルマグネンウムハライドとのグ
リニヤールカップリング反応を行ない、続いて沢過し、
水で洗浄して、生成物を蒸留することにより製造される
。These organostannanes were prepared by Grignard coupling reaction between trialkyltin halide and pendylmagneneum halide in an inert solvent, followed by filtration.
It is produced by washing with water and distilling the product.
これ等のオルガノスタナンと使用する好まし−光還元性
染料はメチレンブルー及びローズベンガルである。Preferred photoreducible dyes for use with these organostannanes are methylene blue and rose bengal.
液体組成物の成分(5)として使用するのに適当なカチ
オン重合可能な成分を有する物質は、公知でsb、環状
エーテル、例えばオキセタンもしくはテトラヒドロフラ
ン;環状エステル、例えばラクトン;またはエピスルフ
ィド、例えばエチレンスルフィドのようなカチオン重合
可能な複素環式化合物であってもよい。好ましい(5)
id、1.2−エポキシド、ビニルエーテルもしくはそ
れらの混合物である。適当な1.2−エポキシドは、エ
チレンオキンド、プロピレンオキシド及びエビクロロヒ
ドリンに含む。好ましい1.2−エポキシドは、1価ア
ルコールもしくはフェノールのグリシジルエステルであ
り、例えばn−ブチルグリシジルエーテル、インオクチ
ルクリゾジルエーテル、フェニルクリシジルエーテル及
ヒクレジルグリシジルエーテル;アルファーピネンオキ
シドのようなモノエポキシド及び3,4−エポキシシク
ロへキシルメチル−3/、41−エポキシシクロへキサ
ンカルボキンレートのようなエポキシ樹脂及びその6.
6′一ジメチル誘導体を含む脂環式エポキシド、並びに
グリシジルエステル、特にプロピオン酸、シクロへキサ
ンカルボン酸及び安息香酸のようなモノカルボン酸のグ
リシジルエステルである。Substances with cationically polymerizable components suitable for use as component (5) of liquid compositions are known and include sb, cyclic ethers such as oxetane or tetrahydrofuran; cyclic esters such as lactones; or episulfides such as ethylene sulfide. It may also be a cationically polymerizable heterocyclic compound such as. Preferable (5)
id, 1,2-epoxide, vinyl ether or mixtures thereof. Suitable 1,2-epoxides include ethylene oxide, propylene oxide and shrimp chlorohydrin. Preferred 1,2-epoxides are glycidyl esters of monohydric alcohols or phenols, such as n-butyl glycidyl ether, inoctyl cricidyl ether, phenyl cricidyl ether and hycresyl glycidyl ether; alpha-pinene oxide. Epoxy resins such as monoepoxides and 3,4-epoxycyclohexylmethyl-3/,41-epoxycyclohexanecarboxylate and their 6.
Cycloaliphatic epoxides, including 6'-dimethyl derivatives, and glycidyl esters, especially of monocarboxylic acids such as propionic acid, cyclohexanecarboxylic acid, and benzoic acid.
適当なビニルエーテルは、ジヒドロピラン成分及び好ま
しくはアルコール及びフェノールのビニルオキンアルキ
ルエーテルを含む環状ビニルエーテルを包含する。Suitable vinyl ethers include cyclic vinyl ethers containing a dihydropyran component and preferably vinyloxyne alkyl ethers of alcohols and phenols.
(5)のだめに広範ガ重合開始剤を使用することができ
る。例えばカチオン重合可能な成分(5)のための開始
剤は、少なくとも一種の次式(■:[R1o]+an−
CLTm ]−q(′lID〔式中、
Lは2価ないし7価の金属もしくは非金属を表わし、
Tはハロゲン原子を表わすか、またはTのひとつがヒド
ロキシル基を表わし、
qは1ないし3の整数を表わし、
mはL+qの価数に相当する整数を表わし、aは1もし
くは2を表わし、
nは1ないし3の整数を表わし、並びにRIOは、次式
:
%式%
(式中、Ar及びAr’は置換もしくは未置換の芳香族
基を表わす。)で表わされる基;
(11) 次式:
%式%))
(式中、Gはアレーンもしくはジアニウム基を表わし、
Zはチタン、バナジウム、クロム、マンガン、鉄、コバ
ルト、ニッケル、銅、ニオブ、モリブデン、ルテニウム
、ロジウム、)(ラジウム、銀、タンタル、タングステ
ン、レニウム、オスミウム、イリジウム、白金及び金か
ら選択されるd−ブロックの遷移元素の原子を表わし、
並びにXは、Zが閉殻電子配置であるような正の整数を
表わす。)で表わされる基;(fil) 芳香族ジア
ゾニウムイオン;(jy) ((13,11)(R1
2M)a)+an(式中、aは1又は2を表わし、nは
1ないし3の整数を表わし、Mけ周期表の第1ybない
し■b族、第1族もしくは第■b族からの1価ないし3
価のカチオンを表わし、R11ばπ−アレーンを表わし
、並びに1%12はπ−アレーンもしくはπ−アレーン
のアニオンを表わす。)で表わされる基:
(V) 芳香族スルホニウムイオン;または(V)
芳香族スルホキンニウムイオン(vi ヨードシル
イオン
から選択されたイオンを表わす。〕で表わされる化合物
であってもよい。(5) A wide range of polymerization initiators can be used. For example, the initiator for the cationically polymerizable component (5) is at least one of the following formula (■:[R1o]+an-
CLTm]-q('lID [wherein L represents a divalent to heptavalent metal or nonmetal, T represents a halogen atom, or one of the T represents a hydroxyl group, and q represents 1 to 3. represents an integer, m represents an integer corresponding to the valence of L + q, a represents 1 or 2, n represents an integer from 1 to 3, and RIO represents the following formula: % formula % (wherein, Ar and Ar' represent a substituted or unsubstituted aromatic group; (11) the following formula: %formula%)) (wherein G represents an arene or dianium group,
Z is selected from titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, niobium, molybdenum, ruthenium, rhodium, ) (radium, silver, tantalum, tungsten, rhenium, osmium, iridium, platinum and gold) - represents an atom of a transition element of the block;
and X represents a positive integer such that Z is a closed shell electron configuration. ); (fil) aromatic diazonium ion; (jy) ((13,11)(R1
2M) a) + an (wherein a represents 1 or 2, n represents an integer of 1 to 3, M times 1 from Groups 1yb to 2b, Group 1 or Group 2b of the periodic table) value or 3
R11 represents a π-arene, and 1%12 represents a π-arene or an anion of a π-arene. ): (V) aromatic sulfonium ion; or (V)
It may also be a compound represented by an aromatic sulfoquinium ion (vi represents an ion selected from iodosyl ions).
RIOがヨードニウム塩であるとき、開始剤は次式CI
’m :
CArh −1−Ar’i 3”3 [L’、[’m)
(k−1) (Vln)(式中、
Arは一価の芳香族基を表わし、
Ar’は二価の芳香族基を表わし、
hは0まだは2を表わし、かつ1は0または11r、表
わし、
h+iの和が2であるか、■の価数がj−に−1を表わ
し、
Lの価数は1であり、並びに
kは1よシも大きく、8までの整数を表わし、並びに
り、T及びmは上記で定義した意味を表わす。)で表わ
される化合物であってよい。When RIO is an iodonium salt, the initiator has the following formula CI
'm: CArh -1-Ar'i 3"3 [L', ['m)
(k-1) (Vln) (wherein Ar represents a monovalent aromatic group, Ar' represents a divalent aromatic group, h represents 0 or 2, and 1 is 0 or 11r) , represents, the sum of h + i is 2, or the valence of ■ represents -1 for j-, the valence of L is 1, and k represents an integer greater than 1 and up to 8, and T and m have the meanings defined above.
Arに包含される基は、同一または異種の、好ましくは
炭素原子数1ないし8のアルコキン基、炭素原子数1な
いし8のアルキル基、ニトロ基もしくは塩素原子である
1ないし4個の一価の基で置換できる、5カいし20の
炭素原子を有するアリル基もしくは芳香族複素環基であ
りうる。Ar ld %に、フェニル基、クロロフェニ
ル基、ニトロフェニル基、メトキンフェニル基モジくは
ピリジル基である。Ar’に包含される基は、次式:
(式中、
nは、1ないし6、好1しくは1もしくは2を表わす。The groups included in Ar are the same or different, preferably 1 to 4 monovalent alkoxy groups having 1 to 8 carbon atoms, alkyl groups having 1 to 8 carbon atoms, nitro groups, or chlorine atoms. It can be an allyl group or an aromatic heterocyclic group having 5 to 20 carbon atoms which can be substituted with a group. Ar ld % is a phenyl group, a chlorophenyl group, a nitrophenyl group, a methquinphenyl group, or a pyridyl group. Groups included in Ar' are represented by the following formula: (wherein n represents 1 to 6, preferably 1 or 2).
)で表わされるアリレン基、好ましくは炭素原子数12
ないし20の2核基である。), preferably an arylene group having 12 carbon atoms
to 20 dinuclear groups.
ヨードニウム塩は、(Blが可視スペクトルの輻射線で
活性化する場合には染料増感剤と配合して使用する。Iodonium salts are used in combination with dye sensitizers (when Bl is activated by radiation in the visible spectrum).
本発明の実施において上記のアリールヨードニウム塩と
配合して使用することのできる染料は、カチオン性染料
で、例えばキルクーオスマー百科辞典(Kirk −O
thmer Encyclopedia )、第2[1
969年、ジョン ワイリー アンドサンズ(John
Wiley and 5ons )、ニューヨークの
第20巻194−7頁に記載されているようなものであ
る。使用することのできるカチオン性染料のいくつかの
例は、
アクリジンオレンジ; C,1,46005アクリジン
イエロー; C1I、46035ホスフインR: C,
I、 46045ベンゾフラピン;C0■、46065
′セトフラビンT : C0I、 49005である
。Dyes that can be used in combination with the above-described aryliodonium salts in the practice of the present invention are cationic dyes, such as the Kirk-Osmer Encyclopedia (Kirk-O
thmer Encyclopedia), Part 2 [1
969, John Wiley & Sons
Wiley and 5ons), New York, Vol. 20, pp. 194-7. Some examples of cationic dyes that can be used are: Acridine Orange; C, 1,46005 Acridine Yellow; C1I, 46035 Phosphine R: C,
I, 46045 Benzofurapine; C0■, 46065
'Cetoflavin T: C0I, 49005.
上記に加えて、塩基性染料も使用してよい。In addition to the above, basic dyes may also be used.
これらの塩基性染料のいくつかは、上述のキルクーオス
マー百科辞典、第7巻、532−4頁に記述されており
、以下のもの
ヘマトポルフィリン、
4.4−ビスジメチルアミノベンゾフェノン及び
4.4′−ビスジエチルアミノベンゾフェノン
を包含する。Some of these basic dyes are described in the above-mentioned Kirkoosmer Encyclopedia, Volume 7, pages 532-4, and include: hematoporphyrin, 4,4-bisdimethylaminobenzophenone, and 4,4'- Includes bisdiethylaminobenzophenone.
)(,10が式U)で表わされるカチオンであるとき、
開始剤は次式(■):
CG−Z−(CO)X 3+[:Lm ]C’ff、)
(式中、
G、Z、x、L、T及びmは上記で定義した意味を表わ
す。)で表わされる。)(, 10 is a cation represented by formula U),
The initiator has the following formula (■): CG-Z-(CO)X 3+[:Lm ]C'ff,)
(In the formula, G, Z, x, L, T and m have the meanings defined above.)
Gがアレーン基、すなわちそれ自体が6電子配位子であ
るとき、これは縮合環基金包含する単核もしくは多核基
であってよい。好ましくは、炭化水素基であり、所望に
より1個もしくはそれ以上のアルコキシ基により置換さ
れた炭化水素基で、好1しくはベンゼン、トルエン、メ
シチレン、ナフタレン、ビフェニル、フェナントレン、
フルオレン及びアントラセンのような6ないし18個の
炭素原子を含有する。When G is an arene group, ie a six-electron ligand itself, this may be a mononuclear or polynuclear group containing a fused ring group. Preferred are hydrocarbon groups, optionally substituted by one or more alkoxy groups, preferably benzene, toluene, mesitylene, naphthalene, biphenyl, phenanthrene,
Containing 6 to 18 carbon atoms such as fluorene and anthracene.
0がジエニリウム基ヲ表わすとき、好1しくに次式
(式中、
RAは炭素原子数1ないし4のアルキル基、炭素原子数
1ないし4のアルコキシ基、もしくは1個以上のオキソ
カルボニル基よって中断され、かつ炭素原子を12個1
で含有するアルキル基を表わし、
pは0,1.2もしくは3を表わし、
Zは好ましくはクロム、コバルト、ニッケルを表わし、
特に鉄もしくはマンガンを表わす。)で表わされる環状
基のひとつである。When 0 represents a dienylium group, preferably the formula and 12 carbon atoms 1
represents an alkyl group containing p represents 0, 1.2 or 3, Z preferably represents chromium, cobalt, nickel,
Especially represents iron or manganese. ) is one of the cyclic groups represented by
式■(式中、Gはアレーン基を表わす。)で表わされる
特に好ましい個々の塩は、π−トルエントリカルボニル
マンガン、π−ベンゼントリカルボニルマンガン、π−
メシチレントリカルボニルマンガン、π−1−メfk−
5,6,7゜8−テトラヒドロナフタレントリカルボニ
ルマンガン、π−ヘキシルベンゼントリカルボニルマン
ガン、π−メトキシベンゼントリカルボニルマンガン及
びπ−へキゾルオキシベンゼントIJ カルボニルマン
ガンのへキサフルオロホスフェートを包含する。Particularly preferred individual salts of the formula (wherein G represents an arene group) include π-toluentricarbonylmanganese, π-benzenetricarbonylmanganese, π-benzenetricarbonylmanganese,
Mesitylenetricarbonylmanganese, π-1-methfk-
5,6,7°8-Tetrahydronaphthalenetricarbonylmanganese, π-hexylbenzenetricarbonylmanganese, π-methoxybenzenetricarbonylmanganese and π-hexoloxybenzene IJ Includes hexafluorophosphate of carbonylmanganese.
これらの塩は、中心原子(マンガン)がその原子価殻中
に18個の電子を有し、単一陽性カチオン中の一価のマ
ンガンは6個の電子を提供し、アレーン基は6個の電子
を提供して、そして3個のカルボニル基はそれぞれ2個
の電子を提供して閉殻電子配置の要求を満足させている
。These salts are such that the central atom (manganese) has 18 electrons in its valence shell, the monovalent manganese in the single positive cation provides 6 electrons, and the arene group provides 6 electrons. and the three carbonyl groups each donate two electrons to satisfy the closed-shell electronic configuration requirement.
式■で表わされ、Gがアレーン基もしくはジエニリウム
基を表わす塩は一般に公知であシ、ヨーロッパ特許出願
第94914号明細書に記述されているようにして製造
できる。Salts of the formula (1) in which G represents an arene group or a dienylium group are generally known and can be prepared as described in European Patent Application No. 94,914.
式■(式中、Gは環状のジエニリウム基を表わす。)で
表わされる特に好ましい個々の塩は、トリカルボニル(
シクロヘキサ−1,3−ジエニリウム)鉄テトラフルオ
ロボレート、トリカルボニル(1−メチルシクロヘ−?
1−−2.4−ジエニリウム)鉄へキサフルオロホスフ
ェート、トリカルボニル(1−メチル−4−メトキシシ
クロヘキサ−2,4−ジエニリウム)鉄へキサフルオロ
ホスフェート、トリカルボニル(2−メトキンビンクロ
[4,4,0] ]デカー2.4−ジエニリウム鉄へ
キサフルオロホスフェート、トリカルボニル(1−(ア
セトキシ−メチル)−2−(メトキシカルボニルアセト
キシ)エチルシクロヘキサ−2,4−ジエニリウム)−
鉄へキサフルオロホスフェート、トリカルボニル(1−
エチル−4−インプロポキシシクロヘキサ−2,4−ジ
エニリウム)鉄へキサフルオロホスフェート、トリカル
ボニル(1−(メトキシカルボニル)−4−メトキゾソ
クロヘキサー2.4−ジエニリウム)鉄テトラフルオロ
ボレート及び(π−シクロヘキサジェニル)トリカルボ
ニル鉄(If)へキサフルオロアルセネートヲ包含する
。Particularly preferred individual salts of the formula (wherein G represents a cyclic dienylium group) are tricarbonyl (
cyclohexa-1,3-dienylium) iron tetrafluoroborate, tricarbonyl (1-methylcyclohe-?
1--2,4-Dienylium) iron hexafluorophosphate, tricarbonyl (1-methyl-4-methoxycyclohexa-2,4-dienylium) iron hexafluorophosphate, tricarbonyl (2-methquinvinco[4,4 ,0] ]Deca2.4-dienylium iron hexafluorophosphate, tricarbonyl(1-(acetoxy-methyl)-2-(methoxycarbonylacetoxy)ethylcyclohex-2,4-dienylium)-
Iron hexafluorophosphate, tricarbonyl (1-
Ethyl-4-impropoxycyclohex-2,4-dienylium)iron hexafluorophosphate, tricarbonyl(1-(methoxycarbonyl)-4-methoxosoclohexar2,4-dienylium)iron tetrafluoroborate and ( (π-cyclohexagenyl) tricarbonyl iron (If) hexafluoroarsenate.
これらの塩は同様に、中心原子(鉄)が閉殻電子配置を
有するという要求を満たしており、鉄は7個の電子を提
供し、ジエニリウム基は5個の電子を提供し、そしてカ
ルボニル基は、それぞれ2個の電子を提供する(すなわ
ち全部で18個)。These salts also meet the requirement that the central atom (iron) has a closed-shell electronic configuration, with the iron providing 7 electrons, the dienylium group providing 5 electrons, and the carbonyl group providing 5 electrons. , each providing 2 electrons (i.e. 18 in total).
該芳香族基は未置換または1個以上のアリールチオ基、
アリールオキシ基、ジアルキルアミン基、アルキル基も
しくけアルコキシ基によって置換されてもよい。The aromatic group is unsubstituted or has one or more arylthio groups,
It may be substituted with an aryloxy group, a dialkylamine group, an alkyl group or a skeletalkoxy group.
RIOがメタロセニウムイオンであるとき、開始剤は、
次式X:
[(l(,11)(l(、uM)a)+an −(L
Tm)−q (X)(式中、
aは1もしくは2を表わし、
n及びqは互いに独立して1から3までの整数を表わし
、
M、L、T及びmは ;
、 ° 上記で定義した意味を表わし、R11は
π−アレーンを表わし、並びにR”はπ−アレーンもし
くはπ−アレーンのアニオンを表わす。)で表わされる
ものであってよい。When RIO is a metallocenium ion, the initiator is
The following formula X: [(l(,11)(l(,uM)a)+an −(L
Tm)-q (X) (wherein a represents 1 or 2, n and q independently represent integers from 1 to 3, M, L, T and m are; , ° defined above R11 represents π-arene, and R'' represents π-arene or an anion of π-arene).
可能なπ−アレーンR11及びR12は、特に炭素原子
数6ないし24の芳香族基もしくは炭素原子数3ないし
30の芳香族複素環基を表わし、該基は未置換またはハ
ロゲン原子、好ましくは塩素原子もしくは臭素原子、あ
るいは炭素原子数1ないし8のアルキル基、炭素原子数
1ないし8のアルコキン基、シアノ基、炭素原子数1な
いし8のアルキルチオ基、炭素原子数2ないし乙のモノ
カルボン酸アルキルエステル基、フェニル基、炭素原子
数2ないし5のアルカノイル基もしくはベンゾイル基の
ような同一もしくは異種の一価の基によって一置換ある
いは多置換されてもよい。これらのπ−アレーン基は、
単核、縮合多核もしくは非縮合多核系であってよく、最
後に記載した系において、核は直接もしくは−S−、−
〇−あるいは一〇=C−のような橋員を介して結合して
もよい。Possible π-arenes R11 and R12 are in particular C6 -C24 aromatic radicals or C3 -C30 aromatic heterocyclic radicals which are unsubstituted or contain halogen atoms, preferably chlorine atoms. or a bromine atom, or an alkyl group having 1 to 8 carbon atoms, an alkoxy group having 1 to 8 carbon atoms, a cyano group, an alkylthio group having 1 to 8 carbon atoms, or a monocarboxylic acid alkyl ester having 2 to 8 carbon atoms. They may be mono- or polysubstituted by the same or different monovalent groups, such as phenyl, C2-C5 alkanoyl or benzoyl. These π-arene groups are
It may be a mononuclear, fused polynuclear or non-fused polynuclear system, in the last mentioned system the nucleus is directly or -S-, -
They may be bonded via a bridge member such as 〇- or 〇=C-.
π−アレーンのアニオンとしてのR112は、例えばイ
ンデニルアニオンのような上記の種類のπ−アレーンの
アニオンで、特に未置換または炭素原子数1ないし8の
アルキル基、炭素原子数2ないし6のモノカルボン酸ア
ルキルエステル基、シアン基、炭素原子数2ないし5の
アルカノイル基もしくはベンゾイル基のような同一もし
くは異種の一価の基によって一置換あるいは多置換され
てもよいシクロペンタジェニルアニオンであってよい。R112 as an anion of a π-arene is an anion of a π-arene of the type mentioned above, such as an indenyl anion, in particular an unsubstituted or C 1 -C 8 alkyl group, a C 2 -C 6 monoanion. A cyclopentadienyl anion which may be mono- or polysubstituted with the same or different monovalent groups such as a carboxylic acid alkyl ester group, a cyanide group, an alkanoyl group having 2 to 5 carbon atoms, or a benzoyl group; good.
アルキル基、アルコキシ基、アルキルチオ基、モノカル
ボン酸アルキルエステル基及びアルカノイル置換基は直
鎖もしくは枝分れ鎖であってよい。典型的なアルキル、
アルコキシ、アルキルチオ、モノカルボン酸アルキルエ
ステルモジくはアルカノイル置換基は、:メチル基、エ
チル基、n−プロピル基、インプロピル基、n−ブチル
基、第ニブチル基、第三ブチル基、n−ペンチル基、n
−ヘキンル基、n−オクチル基、メトキシ基、エトキシ
基、n−ブロボキ7基、インプロポキシ基、n−ブトキ
ン基、n−へキシルオキ7基、n−オクチルオキシ基、
メチルチオ基、エチルチオ基、n−プロピルチオ基、イ
ンプロピルチオ基、n−ブチルチオ基、n−ペンチルチ
オ基、n−へキシルチオ基、カルボン酸メチルエステル
基、n−ペンチルエステル基、アセチル基、グロビオニ
ル基、ブチリル基及びバレロイル基である。アルキル基
、アルコキン基、アルキルチオ基及びアルキル部分中に
1ないし4個、特に1もしくは2個の炭素原子を含有す
るモノカルボン酸アルキルエステル基、及び2もしくは
3個の炭素原子を含有するアルカノイル基が好ましい。The alkyl, alkoxy, alkylthio, monocarboxylic acid alkyl ester and alkanoyl substituents may be straight chain or branched. typical alkyl,
Alkoxy, alkylthio, monocarboxylic acid alkyl ester modules or alkanoyl substituents include: methyl group, ethyl group, n-propyl group, inpropyl group, n-butyl group, nibutyl group, tertiary butyl group, n-pentyl group. base, n
- hequinyl group, n-octyl group, methoxy group, ethoxy group, n-broboxyl group, impropoxy group, n-butquine group, n-hexyloxy group, n-octyloxy group,
Methylthio group, ethylthio group, n-propylthio group, inpropylthio group, n-butylthio group, n-pentylthio group, n-hexylthio group, carboxylic acid methyl ester group, n-pentyl ester group, acetyl group, globionyl group, They are butyryl group and valeroyl group. Alkyl groups, alkokyne groups, alkylthio groups and monocarboxylic acid alkyl ester groups containing 1 to 4, especially 1 or 2 carbon atoms in the alkyl moiety, and alkanoyl groups containing 2 or 3 carbon atoms; preferable.
好ましい置換されたπ−アレーンもしくは置換されたπ
−アレーンのアニオンは、上述の置換基、特に塩素原子
、臭素原子、メチル基、エチル基、メトキシ基、エトキ
シ基、ンアノ基、カルボン酸メチル基もしくはエチルエ
ステル基並びにアセチル基’11f:たけ2個含有する
ものである。Preferred substituted π-arenes or substituted π
-Arene anions include the above-mentioned substituents, especially chlorine atom, bromine atom, methyl group, ethyl group, methoxy group, ethoxy group, anno group, carboxylic acid methyl group or ethyl ester group, and acetyl group '11f: 2 It contains.
R11及び)112は同一もしくは異種のπ−アレーン
であってよい。適当な芳香複素環π−アレーンは、S−
5N−及び/またはO原子を含有する系である。S−及
び/筐だはO原子を含有する芳香複索環π−アレーンが
好ましい。適当なπ−アレーンの例ハ、ベンゼン、トル
エン、キシレン、エチルベンゼン、クメン、メトキシベ
ンゼン、エトキシベンゼン、ジメトキシベンゼン、p−
クロロトルエン、クロロベンゼン、ブロモベンゼン、ジ
クロロベンゼン、アセチルベンゼン、トリメチルベンゼ
ン、トリメトキンベンゼン、ナフタレン、1.2−ジヒ
ドロナフタレン、メトキシナフタレン、エトキシナフタ
レン、クロロナフタレン、ブロモナフタレン、ビフェニ
ル、スチルベン、インデン、ビフェニレン、フルオレン
、フェナントレン、アントラセン、9.10−ジヒドロ
アントラセン、トリフェニレy1ピレン、ナフタセン、
コロネン、チオフェン、クロメン、キサンチン、チオキ
サンチン、ベンゾチオフェン、ナフトチオフェン、チア
ントレン、ジフェニレンオキシド、ジフェニレンスルフ
ィド、アクリジン及びカルバゾールである。R11 and )112 may be the same or different π-arenes. A suitable aromatic heterocycle π-arene is S-
It is a system containing 5N- and/or O atoms. Aromatic polycyclic π-arenes containing S- and/or O atoms are preferred. Examples of suitable π-arenes include benzene, toluene, xylene, ethylbenzene, cumene, methoxybenzene, ethoxybenzene, dimethoxybenzene, p-
Chlorotoluene, chlorobenzene, bromobenzene, dichlorobenzene, acetylbenzene, trimethylbenzene, trimethquinbenzene, naphthalene, 1,2-dihydronaphthalene, methoxynaphthalene, ethoxynaphthalene, chloronaphthalene, bromonaphthalene, biphenyl, stilbene, indene, biphenylene, Fluorene, phenanthrene, anthracene, 9.10-dihydroanthracene, triphenylene y1 pyrene, naphthacene,
Coronene, thiophene, chromene, xanthine, thioxanthine, benzothiophene, naphthothiophene, thianthrene, diphenylene oxide, diphenylene sulfide, acridine and carbazole.
aが2であるとき、それぞれR112はπ−アレーンの
アニオンであるのが好ましく、それぞれMは、同一の金
属原子である。置換されだπ−アレー′ンのアニオンの
例は、メチル−、エチル−1n −フo l:l”JL
/−及ヒn −フチルゾクロベンタジエンのアニオン、
ジメチルシクロペンタジェンのアニオン、シクロペンタ
ジェンカルボン酸メチルエステル及びエチルエステルの
アニオン、アセチルシクロペンタジェンのアニオン、プ
ロピオニル−シクロペンタジェンのアニオン、シアノシ
クロペンタジェンのアニオン及びベンゾイルシクロペン
タジェンの′アニオンである。When a is 2, each R112 is preferably an anion of π-arene, and each M is the same metal atom. Examples of substituted π-arean anions include methyl-, ethyl-1n-fo l:l'JL
/- and anion of n-phthylzochlorobentadiene,
anion of dimethylcyclopentadiene, anion of cyclopentadienecarboxylic acid methyl ester and ethyl ester, anion of acetylcyclopentadiene, anion of propionyl-cyclopentadiene, an anion of cyanocyclopentadiene, and an anion of benzoylcyclopentadiene. be.
好ましいアニオンは未置換インデンのアニオンで、特に
未置換シクロペンタジェンのアニオンである。Preferred anions are those of unsubstituted indene, especially those of unsubstituted cyclopentadiene.
好ましくはaが1のとき、几11はベンゼン、トルエン
、キシレン、クメン、メトキシベンゼン、クロロベンゼ
ン、p−クロロトルエン、ナフタレン、メチルナフタレ
ン、クロロナフタレン、メトキンナフタレン、ビフェニ
ル、インデン、ピレンもしくはジフェニレンスルフィド
でアリ、R12ハンクロベンタジエン、アセチル−シク
ロペンタジェンもしくはインデンのアニオン、ベンゼン
、トルエン、キシレン、トリメチルベンゼン、ナフタレ
ンもしくはメチルナフタレンのアニオンである。特に好
ましいものは、aが1を表わし Bitがクメン、η6
−ピレンもしくはη6−ナフタレンを表わし、R1”が
η5−シクロペンタジェンのアニオンを表わし、nが1
または2、特に1を表わし、qが好ましくは1を表わす
式Xで表わされる錯体である。Mは例えばTi”、 T
i”、 Ti”、 Zr”、 Zr2”、 Zr”、
Hf” 。Preferably, when a is 1, 几11 is benzene, toluene, xylene, cumene, methoxybenzene, chlorobenzene, p-chlorotoluene, naphthalene, methylnaphthalene, chloronaphthalene, methquinnaphthalene, biphenyl, indene, pyrene, or diphenylene sulfide. and R12 is an anion of hanclobentadiene, acetyl-cyclopentadiene or indene, an anion of benzene, toluene, xylene, trimethylbenzene, naphthalene or methylnaphthalene. Particularly preferable ones are where a represents 1, Bit is cumene, and η6
- represents pyrene or η6-naphthalene, R1” represents an anion of η5-cyclopentadiene, and n is 1
or 2, in particular 1, and q preferably represents 1. M is, for example, Ti”, T
i”, Ti”, Zr”, Zr2”, Zr”,
Hf”.
Hf2+、 Hf” 、 Nb”、 Nb2” 、 N
bt、 Cr+、 Mo” 。Hf2+, Hf”, Nb”, Nb2”, N
bt, Cr+, Mo”.
Mo”、 W” 、 W2+、 Mn” 、 Nm”
、 Re+、 Fe2”。Mo”, W”, W2+, Mn”, Nm”
, Re+, Fe2”.
Co’、 Co”、 Ni2+もしくはCu2+テある
。好まL<!−1、Mはクロム、コバルト、マンガン、
タングステンもしくはモリゾニウムカチオンで、特に鉄
のカチオンで、最も好筐しくはFe2+である。Co', Co'', Ni2+ or Cu2+. Preferably L<!-1, M is chromium, cobalt, manganese,
A tungsten or morizonium cation, especially an iron cation, most preferably Fe2+.
式Xで表わされる化合物は、例えばヨーロッパ特許出願
第94915号明細書に記載されているような公知の方
法により下記式
〔(Ru)(ntzm )a )+afl = [X
] −Q (XOq
の化合物と、[LTm]−q
(これらの式中、a 、m 、 n 、 q 、R11
,R12゜M及びLは式Xで定義されたものと同様の意
味を表わし、[X]−qはCLTm]−qと異なるアニ
オンを表わす。)
とを反応することにより製造することができる。The compound represented by the formula
] -Q (XOq compound and [LTm]-q (in these formulas, a, m, n, q, R11
, R12°M and L have the same meanings as defined in formula X, and [X]-q represents an anion different from CLTm]-q. ) can be produced by reacting with
弐■で表わされる化合物と下記式
%式%()
(式中、aとMは上記で定義された意味を表わL 、I
’ll’ (dπ−アレーンもしくはπ−アレーンのア
ニオンを表わし、R12ばπ−アレーンのアニオンを表
わす。)
で表わされる化合物の双方は、同一まだは異種のπ−ア
レーンを周期表のsb族から■b族、■族もしくはIb
族の金属塩と共にルイス酸の存在下で反応することによ
り製造することができる。式X、N及びM′T″表わさ
れるイと合%d、前記化合物をそれぞれルイス酸の存在
下でR11及び/又はR12及びR111’と反応させ
ることにより配位子交換を行なうのにも適している。こ
れらの場合、nは2が好ましく、特に1が好まし、い。The compound represented by 2■ and the following formula % formula % () (wherein a and M represent the meanings defined above;
'll' (represents an anion of dπ-arene or π-arene, and R12 represents an anion of π-arene.) Both compounds represent the same or different π-arenes from group sb of the periodic table. ■B group, ■group or Ib group
It can be produced by reacting with a group metal salt in the presence of a Lewis acid. When combined with a of the formula In these cases, n is preferably 2, particularly preferably 1.
Lが金属である式Xで表わされる化合物もまた、同一ま
たは異種のπ−アレーンをルイス酸の存在下で、周期表
の■b族から■b族、■族もしくはIb族の金属、例え
ばチタン、ジルコシラム、クロム、マンガンの塩、特に
鉄塩と反応することにより製造することができる。最終
的に、式Xで表わされる化合物は、アニオン交換により
通常の方法で異種アニオン〔LTm〕−qを有する式X
で表わされる錯体に変えることができる。Compounds of the formula , zircosilam, chromium, manganese salts, especially iron salts. Finally, the compound of formula
It can be converted into a complex represented by
好ましい実施態様において、交換されていない式■で表
わされるπ−錯体、例えばフェロセンもしくはビス−(
η5−イデニル)鉄(It)は出発物質として使用され
、これらは配位子交換により式刀で表わされる錯体に変
えられ、続いてアニオンCLTm〕”’の塩と反応させ
られる。この反応において中間体として得られる式Xで
表わされる錯体は、通常、単離されない。In a preferred embodiment, unexchanged π-complexes of the formula
η5-Idenyl) iron (It) are used as starting materials, which are converted into the complex represented by the formula by ligand exchange and subsequently reacted with a salt of the anion CLTm]''. In this reaction, the intermediate The complex of formula X obtained as a complex is usually not isolated.
適当なアニオン〔LTm〕−qの塩としては、例えばア
ルカリ金属塩、アルカリ土類金属塩、もしくはアンモニ
ウム塩が挙げられる。アルカリ金属塩が好ましく、最も
好ましいものはナトリウム塩もしくはカリウム塩である
。Suitable salts of the anion [LTm]-q include, for example, alkali metal salts, alkaline earth metal salts, or ammonium salts. Alkali metal salts are preferred, most preferably sodium or potassium salts.
上述した反応に適したルイス酸としては、例えばAll
Cl!3 、 AJBr3 、 BF3 、5nC14
及びTiCJ4が挙げられAl(J!3が好ましい。配
位子交換反応は、反応混合物に還元剤、例えばアルミニ
ウムもしくはマグネシウムを加え、もしくは続いて還元
剤、例えばNa2SO3もしくはアスコルビン酸を加え
ることにより有利に行なうことができる。Lewis acids suitable for the above reaction include, for example, All
Cl! 3, AJBr3, BF3, 5nC14
and TiCJ4, with preference given to Al (J!3). The ligand exchange reaction is advantageously carried out by adding a reducing agent, such as aluminum or magnesium, to the reaction mixture, or by subsequently adding a reducing agent, such as Na2SO3 or ascorbic acid. can be done.
アルミニウムは好ましい還元剤である。配位子交換反応
は、通常、不活性有機溶媒中で実施される。適当な溶媒
の例としては、オクタン、ノナン、デカン及びンクロヘ
キサンのような脂肪族もしくは環状脂肪族炭化水素が挙
げられる。Aluminum is the preferred reducing agent. Ligand exchange reactions are usually carried out in an inert organic solvent. Examples of suitable solvents include aliphatic or cycloaliphatic hydrocarbons such as octane, nonane, decane and nclohexane.
所望とあらば、過剰のπ−アレーンもまた溶媒として使
用することができる。If desired, excess π-arene can also be used as a solvent.
弐Mで表わされる化合物とアニオン〔LTm〕−qの塩
との反応及び式Xで表わされる化合物のアニオン交換変
化は、通常、水性または水性−アルコール性媒体、例え
ば水とメタノールもしくはエタノールとの混合溶液中で
行なわれる。アニオン[LTm) −qの塩は少なくと
も化学当量使用さるるがそれよりも過剰が好ましい。The reaction of the compound represented by 2M with a salt of the anion [LTm]-q and the anion exchange transformation of the compound represented by formula It is done in solution. The salt of the anion [LTm)-q is used in at least a chemical equivalent amount, but an excess amount is preferred.
上記の全ての化合物のイオン〔LQm〕−q中の適当な
金属もしくは非金属りの例は、Sb、Fe。Examples of suitable metals or non-metals in the ions [LQm]-q of all the above compounds are Sb, Fe.
8n、Bi 、Al、Ga、In、Ti 、Zr 、S
c 、V、Cr 。8n, Bi, Al, Ga, In, Ti, Zr, S
c, V, Cr.
Mn及びCu:Ce、Pr及びNd(7)ようなランタ
ニドまたはTh、Pa、UもしくはNpのようなアクチ
ニドである。適当な非金属原子は、特にB。Mn and Cu: lanthanides such as Ce, Pr and Nd (7) or actinides such as Th, Pa, U or Np. Suitable nonmetallic atoms are in particular B.
P及びAsである。LはP、As、Bもしくはsbであ
るのが好ましく、P及びsbが最も好ましい。P and As. Preferably L is P, As, B or sb, with P and sb being most preferred.
錯アニオン〔LTm〕−qの例は、BF4−、 PFe
−。Examples of complex anions [LTm]-q are BF4-, PFe
−.
AsF6−、5bF6− 、8bF5 (OH) 、
FeCl4− 、8nC16。AsF6-, 5bF6-, 8bF5(OH),
FeCl4-, 8nC16.
8bC/6 、 BiC/6−である。最も好ましい錯
アニオンは、SbF6. BF4”−、AsF6−及び
PF6−である。8bC/6, BiC/6-. The most preferred complex anion is SbF6. BF4''-, AsF6- and PF6-.
式Xで表わされる化合物を重合開始剤として使用する場
合には、この化合物は有機過酸化物もしくは過酸化水素
あるいはキノンと共に使用することができる。When a compound of formula X is used as a polymerization initiator, this compound can be used together with an organic peroxide or hydrogen peroxide or a quinone.
有機過酸化物の範囲は、2゜5−ジメチル−2,5−ビ
ス(ペンゾイルーベルオキン)ヘキサン、2.5−ジメ
チル−2,5−ビス(第三ブチルベルオキン)ヘキサン
、ジー第三ブチルペルオキシド、ジヘキンレングリコー
ルベルオキソド、第三ブテルグミルベルオキンド、イン
プチルメチルケトンベルオキンド、更に過安息香酸、過
酢酸第三ブチル、第三ブチルベルベンゾエート及び第三
ブチルベルフタレートのような過酸及び過エステルを使
用してもよい。使用してもよい有機ヒドロペルオキシド
は炭素原子数が18までのアルキル、アリールもしくは
ア−7ルキルヒドロベルオキシドを包含スる。Jl的ナ
ヒドロベルオキンドは、メチルエチルケトンヒドロペル
オキシド、第三ブチルヒドロペルオキシド、クメンヒド
ロペルオキシド並びにセチンもしくはシクロヘキセンの
酸化によって生成すれたヒドロペルオキシドを包含し、
第三ブチルヒドロペルオキシド及びクメンヒドロペルオ
キシドがとりわけ効果的である。適当なキノンはベンゾ
キノンを包含する。The range of organic peroxides is 2゜5-dimethyl-2,5-bis(penzoylberooquine)hexane, 2,5-dimethyl-2,5-bis(tert-butylberooquine)hexane, di-tert-butyl peroxide, dihequinlene glycol beroquine, tert-butergumyl bereoquine, imptyl methyl ketone bereoquine, as well as perbenzoic acid, tert-butyl peracetate, tert-butyl perbenzoate and tert-butyl perphthalate. Peracids and peresters may also be used. Organic hydroperoxides which may be used include alkyl, aryl or alkyl hydroperoxides having up to 18 carbon atoms. Jl-class nahydroberokinds include methyl ethyl ketone hydroperoxide, tert-butyl hydroperoxide, cumene hydroperoxide as well as hydroperoxides produced by the oxidation of cetine or cyclohexene;
Tert-butyl hydroperoxide and cumene hydroperoxide are particularly effective. Suitable quinones include benzoquinone.
(5)がカチオン重合可能な成分である場合、適当な重
合開始剤(坊はオニウム塩及びヨードシル塩を含む。エ
ポキシド樹脂及び/又は他のカチオン重合可能な物質と
組合せるとき重合性混合物全与えるオニウム塩は公知で
あり、例えば、適当な芳香族オニウム塩はアメリカ特許
明細書第4058400号及び4058401号に記載
されたものを含む。同様の目的のために使用することが
できる適当な芳香族スルホキンニウム塩はアメリカ特許
明細書第4299938号、433?567号、438
3025号及び4398014号に記載されたものを含
む。この目的のための適当な脂肪族及び脂環式スルホキ
ンニウム塩はヨーロッパ特許公報A EP−A −01
64314号に記載されたものを含む。When (5) is a cationically polymerizable component, a suitable polymerization initiator (including onium salts and iodosyl salts) can be used to form a total polymerizable mixture when combined with the epoxide resin and/or other cationically polymerizable material. Onium salts are known; for example, suitable aromatic onium salts include those described in U.S. Pat. No. 4,058,400 and 4,058,401. Quinium salts are disclosed in U.S. Pat.
3025 and 4398014. Suitable aliphatic and cycloaliphatic sulfoquinium salts for this purpose are described in European Patent Publication A EP-A-01.
Including those described in No. 64314.
この目的のために使用することができる芳香族ヨードニ
ウム塩は英国特許明細書第1516351号及び153
9192号に記載されたものを含む。使用することので
きる芳香族ヨードゾル塩はアメリカ特許明細書第451
8676号に記載されたものを含む。Aromatic iodonium salts which can be used for this purpose include British Patent Specifications Nos. 1,516,351 and 153.
Including those described in No. 9192. Aromatic iodosol salts that can be used include U.S. Pat.
Including those described in No. 8676.
上記にリストアツブした開始剤(B)が、スペクトルが
可視域もしくはそれに近い輻射線で照射される場合によ
り有用なものをいくつか含み、他はより短い波長の紫外
線で照射される場合により有用なものを含むことは光重
合技術を熟知したものにとっては明らかである。(Bl
の選択は、(8)が(C)が可溶化されるべき波長よシ
長い波長で重合されるか、あるいは短い波長で重合され
るかに依存し、また(C)が可溶化されるべき個有の波
長にも依存する。この選択は簡単に実験により決定する
ことができる。The initiators (B) restored above include some that are more useful when irradiated with radiation in or near the visible range of the spectrum, and others that are more useful when irradiated with ultraviolet light at shorter wavelengths. It will be obvious to those familiar with photopolymerization technology that this includes: (Bl
The choice of (8) depends on whether (8) is polymerized at a wavelength longer or shorter than the wavelength at which (C) is to be solubilized; It also depends on the specific wavelength. This selection can be easily determined by experiment.
カチオン重合可能な成分(5)と共重合し得るヒドロキ
シ化合物、例えばジエチレングリコールもしくは1.4
−ブタンジオールのようなジオールもまた液体組成物に
含ませることができる。Hydroxy compounds copolymerizable with the cationically polymerizable component (5), such as diethylene glycol or 1.4
- Diols such as butanediol can also be included in the liquid composition.
液体組成物がカチオン重合可能な成分(8)とその開始
剤(Blを含み、特に開始剤が式%式%)
で表わされるメタロセニウムイオンである場合、不粘着
性の固体状態に重合を完結させるだめに、過酸化物、過
酸化水素もしくはキノンが存在しない場合には組成物を
加熱し、次いで段階(ト)の照射を行なう必要のある場
合がある。この加熱は150℃1での温度で30分以内
行なわれ、通常は80ないし120℃で10分以内の加
熱で充分である。When the liquid composition is a cationically polymerizable component (8) and its initiator (contains Bl, in particular the initiator is a metallocenium ion represented by the formula %), it is possible to polymerize to a non-stick solid state. For completion, it may be necessary to heat the composition in the absence of peroxide, hydrogen peroxide or quinone, followed by step (f) irradiation. This heating is carried out at a temperature of 150.degree. C. for less than 30 minutes, and usually heating at 80 to 120.degree. C. for less than 10 minutes is sufficient.
(Qとして使用することのできる光で可溶化される物質
にはO−ニトロベンズアルデヒド、アメリカ特許第39
91033号に記載されているポリオキシメチレン重合
体、アメリカ特許第3849137号に記載されている
し−ニトロカルボニルエステル、アメリカ特許第408
6210号て記載されてbるO−ニトロフェニルアセタ
ール及びそのポリエステル、並びに末端をキャップした
誘導体、スルホネートエステル基に対してα位もしくは
β位にカルボニル基を含む芳香族アルコールのスルホネ
ートエステル、芳香族アミド、芳香族イミド、芳香族オ
キシムスルホネート、キノンジアジドの1N−スルホニ
ルオキシ誘導体、及びアメリカ特許第4368253号
に記載されているよう塩ベンゾイル基を鎖中に含む樹脂
が含まれる。(Photo-solubilized substances that can be used as Q include O-nitrobenzaldehyde, U.S. Pat.
Polyoxymethylene polymers described in US Pat. No. 91,033, Nitrocarbonyl esters, described in US Pat. No. 3,849,137, US Pat.
O-nitrophenyl acetals and polyesters thereof described in No. 6210, as well as end-capped derivatives, sulfonate esters of aromatic alcohols containing a carbonyl group in the alpha or beta position relative to the sulfonate ester group, and aromatic amides. , aromatic imides, aromatic oxime sulfonates, 1N-sulfonyloxy derivatives of quinone diazide, and resins containing salt benzoyl groups in the chain as described in U.S. Pat. No. 4,368,253.
成分(Qとして使用することのできる好ましい光で可溶
化される物質にはキノンジアジドが含まれる。Preferred photo-solubilized materials that can be used as component (Q) include quinone diazides.
感光性0−キノンジアジド化合物は良く知られており、
例としてそれぞれに水酸基又はアミノ基を有する化合物
、特に芳香族化合物のo −ベンゾキノンジアジドスル
ホニル又は0−ナフトキノンジアジドスルホニルエステ
ル又はアミドが挙げられる。好まし1/′1o−キノン
ジアジドは、0−ベンゾキノンジアジドスルホン酸又は
0−ナフトキノンジアジドスルホン酸と、−価フエノー
ル及び特に、2.2−ビス(ヒドロキシフェニル)プロ
パン、ジヒドロキシジフェニル、2つ又は3つの水酸基
で置換されたベンゾフェノンの如き多価フェノールを含
むフェノール及びフェノール−アルデヒド樹脂及び重合
可能な不飽和置換基を有するフェノールの重合体などの
フェノール樹脂とのエステルである。エステルを誘導す
るのに適したフェノール−アルデヒド樹脂には、フェノ
ール自体、あるいは〇−、m−又はp−クレゾール、0
−lm−又はp−第三ブチルフェノール、o−、m−又
1tip−オクチルフエノールの如きアルキル置換フェ
ノール、あるいは2.2−ビス(4−ヒドロキンフェニ
ル)プロパンの如きビスフェノール、もしくはこれらフ
ェノールの2種以上の混合物と、アセトアルデヒド、ベ
ンズアルデヒド、グリオキシル酸あるいは好適にはホル
ムアルデヒドの如きアルデヒドから製造されたノボラッ
クが含まれる。エステルを誘導するのに適した不飽和フ
ェノールの重合体にはp−ビニルフェノ−ル及U p−
インプロペニルフェノールの単独重合体及び共重合体が
含まれる。Photosensitive O-quinonediazide compounds are well known,
Examples include compounds having a hydroxyl or amino group in each case, in particular the aromatic compounds o-benzoquinonediazidesulfonyl or 0-naphthoquinonediazidesulfonyl esters or amides. Preferably the 1/'1o-quinonediazide is a combination of 0-benzoquinonediazide sulfonic acid or 0-naphthoquinonediazide sulfonic acid with a -valent phenol and especially 2,2-bis(hydroxyphenyl)propane, dihydroxydiphenyl, two or three Esters of phenols, including polyhydric phenols such as benzophenone substituted with hydroxyl groups, and phenolic resins, such as phenol-aldehyde resins and polymers of phenol having polymerizable unsaturated substituents. Phenol-aldehyde resins suitable for deriving esters include phenol itself or 0-, m- or p-cresol, 0
Alkyl-substituted phenols such as -lm- or p-tert-butylphenol, o-, m- or 1tip-octylphenol, or bisphenols such as 2,2-bis(4-hydroquinphenyl)propane, or two of these phenols. Included are mixtures of the above and novolaks made from aldehydes such as acetaldehyde, benzaldehyde, glyoxylic acid or, preferably, formaldehyde. Polymers of unsaturated phenols suitable for deriving esters include p-vinylphenol and U p-
Includes homopolymers and copolymers of impropenylphenol.
好ましいフェノールの0−キノンジアジドスルホニルエ
ステルは、ポリヒドロキシベンゾフェノンあるいはホル
ムアルデヒドとアルキル置換フェノールとから誘導され
たノボラック樹脂あるいはこれらとフェノールとの混合
物の〇−ナフトキノンジアジドスルホニルエステルであ
る。特に好ましいエステルは、ジヒドロキンベンゾフェ
ノン、トリヒドロキンベンゾフェノン、ホルムアルデヒ
ドとo−、m−及びp−クレゾールの混合物あるいはフ
ェノールとp−第三ブチルフェノールとの混合物とから
誘導されるノボラックの1.2−ナフトキノン−2−ジ
アジド−5−スルホニルエステルである。Preferred 0-quinonediazide sulfonyl esters of phenols are 0-naphthoquinonediazide sulfonyl esters of polyhydroxybenzophenones or novolac resins derived from formaldehyde and alkyl-substituted phenols, or mixtures thereof with phenols. Particularly preferred esters are dihydroquine benzophenone, trihydroquine benzophenone, 1,2-naphthoquinone of novolaks derived from formaldehyde and mixtures of o-, m- and p-cresols or mixtures of phenol and p-tert-butylphenol. -2-diazide-5-sulfonyl ester.
前記した感光性キノンジアジドは市販品を利用すること
ができ、あるいは、通常の方法により、例えばフェノー
ルとO−キノンジアジドスルホン酸のエステル形成誘導
体、通常そのスルホン酸塩化物とを通常の条件下でエス
テル化反応することにより製造することもできる。The photosensitive quinonediazide described above can be used as a commercially available product, or can be prepared by esterifying, for example, an ester-forming derivative of phenol and O-quinonediazide sulfonic acid, usually its sulfonic acid chloride, under normal conditions. It can also be produced by reaction.
(C)として使用される他の適当な光で可溶化可能な物
質は、0−ニトロベンズアルデヒド及び2価アルコール
から製造されるO−ニトロフェニルアセクール、アセタ
ールとポリカルボン酸、もしくはアセタールとカルボン
酸まだは無水物のようなその反応性の誘導体とを反応し
て製造したボニルエステル、及びアセタールとカルボン
酸まだはその反応性の誘導体とを反応して製造したその
よりなアセクールの末端を封鎖した誘導体などである。Other suitable photo-solubilizable substances that can be used as (C) are O-nitrophenyl acecure prepared from O-nitrobenzaldehyde and a dihydric alcohol, acetals and polycarboxylic acids, or acetals and carboxylic acids. Bonyl esters, prepared by reacting acetals with their reactive derivatives such as anhydrides, and terminal-capped acetals, prepared by reacting acetals with their reactive derivatives, such as carboxylic acids. derivatives, etc.
中でも0−ニトロベンズアルデヒドと、少なくとも1つ
の酸累原子により中断されてもよい4ないし15の炭素
原子を有するアルキレン基を有する直鎖アルキレングリ
コール、もL<aシクロアルキレンクリコールま◆
タハシクロアルキレンアルキレングリコールような炭素
原子数4ないし7の脂環を含むグリコールとポリエステ
ルと末端をキャップしたこれらアセタールの誘導体とか
ら誘導されるアセタールが好ましい。アセタールを誘導
することのできる直鎖グリコールとしては、1.4−ブ
タンジオール、1.5−ベンタンジオール、1゜6−ヘ
キサンジオール、1.7−へブタンジオール、ジエチレ
ンとジブ口げレンゲリコールとトリエチレングリコール
とトリプロピレングリコールが好ましい。脂環を有する
グリコールとしては、2,2,4.4−テトラメチル−
1゜3−シクロブタンジオール、ビス(4−ヒドロキシ
シクロヘキシル)メタン、1.4−ヘキ”l−ンジオー
ル、1.2−ビス(ヒドロキンメチル)−シクロヘキサ
ン、及び、特に1.4−ビス(ヒドロキンメチル)シク
ロヘキサンが好ましい。Among them, 0-nitrobenzaldehyde and linear alkylene glycols having an alkylene group having 4 to 15 carbon atoms optionally interrupted by at least one acid atom, also L<a cycloalkylene glycols or tahcycloalkylene alkylene Acetals derived from glycols containing C4-C7 alicyclic rings such as glycols, polyesters and end-capped derivatives of these acetals are preferred. Linear glycols that can induce acetals include 1,4-butanediol, 1,5-bentanediol, 1.6-hexanediol, 1,7-hebutanediol, diethylene and dibutene glycol. Triethylene glycol and tripropylene glycol are preferred. As the glycol having an alicyclic ring, 2,2,4,4-tetramethyl-
1°3-cyclobutanediol, bis(4-hydroxycyclohexyl)methane, 1,4-hexanediol, 1,2-bis(hydroquinemethyl)-cyclohexane, and especially 1,4-bis(hydroquine) Methyl)cyclohexane is preferred.
ポリエステルアセタールとしては上記の好ましいアセタ
ールと芳香族ジカルボン酸もしくはトリカルボン酸もし
くにそれらの無水物、例えばフタル酸、テレフタル酸及
びトリメリット酸、及びこれらの無水物、並びにこれら
の2種以上の混合物との反応により製造されるものが好
まし込。特に好ましいポリエステルアセタールとしては
、0−ニトロベンズアルデヒド及び1゜4−ビス(ヒド
ロキンメチル)シクロヘキサンから誘導されるアセター
ルとトリメリット酸無水物を反応して賽造されるものが
挙げられる。The polyester acetals include the above-mentioned preferred acetals, aromatic dicarboxylic acids or tricarboxylic acids, or their anhydrides, such as phthalic acid, terephthalic acid, and trimellitic acid, and their anhydrides, as well as mixtures of two or more of these. Preferably, those produced by the reaction of Particularly preferred polyester acetals include those formed by reacting acetals derived from 0-nitrobenzaldehyde and 1°4-bis(hydroquinemethyl)cyclohexane with trimellitic anhydride.
末端をキャップしたポリアセタールとしては、上記の好
ましいアセタールと一塩基性カルボン酸もしくはその反
応性誘導体、例えば酢酸及び安息香酸及びそれらの塩化
物とを反応して製造したものが挙げられる。End-capped polyacetals include those prepared by reacting the preferred acetals described above with monobasic carboxylic acids or reactive derivatives thereof, such as acetic acid and benzoic acid and their chlorides.
更に(Qとして使用される好ましい光で可溶化可能々物
質としては、アメリカ特許第4368253号に記載さ
れているもののような鎖中にベンゾイン基を含む樹脂、
特にエポキシ樹脂、ポリウレタン及びポリエステルが挙
げられる。これらのベンゾインを含む樹脂の中で好まし
いものとしては、カルボニル基に隣接する炭素原子につ
いている水酸基がエーテル化され、アルキル基に1ない
し4の炭素原子を有するベンゾインアルキルエーテル基
となったベンゾイン基を含むものが挙ケられる。ジヒド
ロキシベンシイ7フルキルエーテルとジグリシル化合物
、特に2価アルコールもL<はフェノールのジグリシジ
ルエーテルもしくはジグリンジルヒダントインとを反応
して製造したエポキシ樹脂が特に好ましい。ベンゾイン
基を含むエポキシ樹脂は本発明方法の2官能基性材料と
して使用することができ、この場合、エポキシ基は段階
(n)におけるカチオン重合を行ない、ベンゾイン基は
段階(4++)の先回溶化を行なう。Additionally (preferred photo-solubilizable materials used as Q include resins containing benzoin groups in the chain, such as those described in U.S. Pat. No. 4,368,253;
Mention may especially be made of epoxy resins, polyurethanes and polyesters. Among these benzoin-containing resins, preferred are benzoin groups in which the hydroxyl group attached to the carbon atom adjacent to the carbonyl group is etherified, resulting in a benzoin alkyl ether group having 1 to 4 carbon atoms in the alkyl group. Includes: Particularly preferred is an epoxy resin produced by reacting dihydroxybency 7-furkyl ether with a diglycyl compound, particularly a dihydric alcohol (L<), or diglycidyl ether of phenol or diglyndyl hydantoin. Epoxy resins containing benzoin groups can be used as bifunctional materials in the process of the invention, in which case the epoxy groups carry out the cationic polymerization in step (n) and the benzoin groups carry out the prior solubilization in step (4++). Do the following.
(Qとして使用される他の好ましい光で可溶化可能な物
質としては、スルホネートエステル基のα位もしくはβ
位にカルボニル基を含む芳香族アルコールのスルホン酸
エステル及び芳香族N−スルホニルオキシイミドが挙げ
られる。これらのエステル及びイミドで好ましいものは
アメリカ特許明細書第4618564号に記載されてお
り、ベンゾインもしくばα−メチロールベンゾインのエ
ステル、特にベンゾイン−p−トルエンスルホネ−ト及
ヒ+ −(p −トルエンスルホニルオキシ)−2−ヒ
ドロキシ−2−フェニル−1−フェニル−1−プロパン
、並ヒニ1゜8−ナフタルイミドのN−スルホニルオキ
シ誘導体、特にN−ベンゼンスルホニルオキンー及びN
−(p−ドデシルベンゼンスルホニルオキシ)−1,8
−ナフタルイミドが好ましい。他の好ましいこのような
エステル及びイミドとしては、(a)カルボニル基に対
しα位もしくはβ位及び芳香族基に対してα位もしくは
β位にある脂肪族炭素原子にその酸素原子を介して付加
したスルホニルオキシ基、もしくは(b)そのカルボニ
ル基を介しであるいはその硫黄原子を介しられる。好ま
しいこのような重合体には、少なくとも1種の下記式
%式%()
〔式中、
m′及びrI”の1方ば1を表わし、他方は0または1
を表わし、Zlは下記式
%式%()
で表わされ、カルボニル基を介してA r ”の芳香族
炭素原子に結合されている基、もしくは下記式
で表わされ、カルボニル基金介してArlの芳香族炭素
原子に結合されている基
(但し、上記式XI 、 XIV中、
piはゼロまたは1を表わし、
Plがゼロの時、R13は水素原子または1価の脂肪族
基、芳香脂肪族基もしくは芳香族基を表わし、
Plが1の時、R113は水素原子、水酸基、エーテル
化された水酸基、アルコキン基、アルキル基またはフェ
ニル置換されたアルキル基を表わし、
R14は水素原子もしくは1価の脂肪族基、環状脂肪族
基、複累環基、芳香族基もしくは芳香脂肪族基を表わし
、
Ar”は1価、2価または3価の芳香族基を表わし、
Ar2は1価または2価の芳香族基を表わし、Ar3は
1価の芳香族基を表わし、そしてLl及びL2はそれぞ
れ−CO−、−COO−、−CONH−。(Other preferred photo-solubilizable substances used as Q include the α- or β-position of the sulfonate ester group.
Sulfonic acid esters of aromatic alcohols containing a carbonyl group at the position thereof and aromatic N-sulfonyloxyimides may be mentioned. Preferred of these esters and imides are described in U.S. Pat. sulfonyloxy)-2-hydroxy-2-phenyl-1-phenyl-1-propane, as well as N-sulfonyloxy derivatives of 18-naphthalimide, especially N-benzenesulfonyloquine and N
-(p-dodecylbenzenesulfonyloxy)-1,8
- Naphthalimide is preferred. Other preferred such esters and imides include (a) additions via its oxygen atom to an aliphatic carbon atom in the alpha or beta position to a carbonyl group and the alpha or beta position to an aromatic group; or (b) via its carbonyl group or via its sulfur atom. Preferred such polymers include at least one of the following formulas %() [where m' and rI'' represent 1 and the other represents 0 or
, Zl is a group represented by the following formula % formula % () and bonded to the aromatic carbon atom of Ar'' through a carbonyl group, or a group represented by the following formula and bonded to Arl through a carbonyl group. a group bonded to the aromatic carbon atom of When Pl is 1, R113 represents a hydrogen atom, a hydroxyl group, an etherified hydroxyl group, an alkoxy group, an alkyl group, or a phenyl-substituted alkyl group, and R14 represents a hydrogen atom or a monovalent alkyl group. represents an aliphatic group, a cycloaliphatic group, a multicyclic group, an aromatic group, or an aromatic aliphatic group, Ar'' represents a monovalent, divalent or trivalent aromatic group, and Ar2 represents a monovalent or divalent aromatic group. represents an aromatic group, Ar3 represents a monovalent aromatic group, and Ll and L2 are -CO-, -COO-, and -CONH-, respectively.
−0COO−、−NHCONH−、−0CONH−、−
C8S−。-0COO-, -NHCONH-, -0CONH-, -
C8S-.
−0C8S−、−08O2−、−CH2−、−cH=
、 −0−。-0C8S-, -08O2-, -CH2-, -cH=
, -0-.
−8もしくは−N=を表わす。)を表わす。〕で表わさ
れる成分を含むものが挙げられる。-8 or -N=. ). ] Examples include those containing components represented by:
好ましいこの様な重合体としては、少なくとも4優のフ
ェノール性水酸基が、m′及びnlの一方が1を表わし
、他方がゼロを表わすと共に、Zlが、Arl及びAr
2がそれぞれフェニル基またはフェニレン基を表わし、
A r ”及びAr2の少なくとも1方がフェニレン基
を表わし、Ar3がフェニル基を表わし、R13が−H
,−0H1炭素原子数1ないし4のアルキル基1だはア
ルコキン基を表わし、R14が存在する場合にはR11
4は−Hもしくは炭素原子数1ないし4のアルキル基を
表わす式XIVで表わされる基であるか、 あるいは、
Zlが、Ar”が0−フェニレン基、1.8−ナフチレ
ン基まだはベンゼン1,2.4−)リイル基を表わし、
Ar2がフェニル基、p−トリル基もしくはm−または
p−フェニレン基を表わす式X■で表わされる基である
式X■で表わされる1画成分によって置換されたフェノ
ールノボラック樹脂が挙げられる。Preferred such polymers include at least four dominant phenolic hydroxyl groups, one of m' and nl represents 1 and the other represents zero, and Zl is Arl and Ar
2 each represents a phenyl group or a phenylene group,
At least one of A r '' and Ar2 represents a phenylene group, Ar3 represents a phenyl group, and R13 represents -H
, -0H1 represents an alkyl group having 1 to 4 carbon atoms, and when R14 is present, R11
4 is -H or a group represented by formula XIV representing an alkyl group having 1 to 4 carbon atoms, or Zl is a group represented by formula XIV representing an alkyl group having 1 to 4 carbon atoms; or 2.4-) represents a lyl group,
Examples include phenolic novolac resins substituted by a fractional component of formula X2, wherein Ar2 is a group represented by formula X2 representing a phenyl group, p-tolyl group, or m- or p-phenylene group.
式XIで表わされる成分を含む重合体は、ノボラック樹
脂のような水酸基を含む重合体と、下記式
%式%()
(式中、Xl及びylの1方は1を表わし、他、方はゼ
ロまたは1を表わし、そしてZl、 Ar’及びArz
は前記と同様の意味を表わす。)で表わされるカルボン
酸とを反応することにより製造することができる。特に
好ましめ重合体は、フェノールノボラックに、N−ヒド
ロキシ−1,8−ナフタルイミドと4−クロロスルホニ
ル安息香酸との反応によって得られるN−(4−カルボ
キシフェニルスルホニルオキソ) −1゜8−ナフタル
イミドの酸塩化物を反応することにより得られる。A polymer containing a component represented by the formula represents zero or one, and Zl, Ar' and Arz
represents the same meaning as above. ) can be produced by reacting with a carboxylic acid represented by A particularly preferred polymer is N-(4-carboxyphenylsulfonyloxo)-1°8- obtained by reacting a phenol novolak with N-hydroxy-1,8-naphthalimide and 4-chlorosulfonylbenzoic acid. Obtained by reacting acid chloride of naphthalimide.
更に(C)として使用するのに好ましい光で可溶化可能
な材料は、ヨーロッパ特許公報第199672号に記載
されているもの、あるいは前記刊行物に記載された反応
性オキシムスルホネートの非反応性誘導体である。特に
好ましいオキシムスルホネートとしては、下記式
%式%()
(式中、
R15及びR16の1方が1価の芳香族基、特にフェニ
ル基モジ〈け4−メトキシフェニル基ヲ表わし、他方が
シアノ基を表わすか、あるいはR15及びR116はそ
れらが結合している炭素原子と一緒になって炭素環基ま
たは複素環基、特にフルオレン環系またはアントロン環
系を形成し、そして
R17は脂肪族基、脂環基、複素環基もしくけ芳香脂肪
族基、特に4−トリル基、4−クロロフェ”−ル基V
*u 4−ドデシルフェニル基を表わす。)
で表わされるもの、が挙げられる。Further preferred photo-solubilizable materials for use as (C) are those described in European Patent Publication No. 199672 or non-reactive derivatives of reactive oxime sulfonates described in said publication. be. Particularly preferred oxime sulfonates include those of the following formula %() (where one of R15 and R16 represents a monovalent aromatic group, particularly a phenyl group or a 4-methoxyphenyl group, and the other represents a cyano group). or R15 and R116 together with the carbon atoms to which they are attached form a carbocyclic or heterocyclic group, in particular a fluorene or anthrone ring system, and R17 represents an aliphatic group, an aliphatic A cyclic group, a heterocyclic group or an aromatic aliphatic group, especially a 4-tolyl group, a 4-chlorophenyl group V
*u represents a 4-dodecylphenyl group. ).
オキシムスルホホー1−14ヨーロツパ特許第199/
172号の記載に従って製造することができる。特に好
筐しい材料は、下記式
%式%
で表わされるオキシムと、下記式
11.1780.CI!
で表わされるスルホニルクロライドとを、通常不活性有
機液媒中、三級アミン存在下で反応することにより製造
することができる。Oxime Sulfophor 1-14 European Patent No. 199/
It can be manufactured according to the description in No. 172. Particularly suitable materials are oximes represented by the following formula % and the following formula 11.1780. CI! It can be produced by reacting a sulfonyl chloride represented by the following in the presence of a tertiary amine, usually in an inert organic liquid medium.
既に説明したように、重合可能な成分(5)と輻射線で
可溶化可能な成分(C)とは、共に同一分子中に存在す
ること、即ち、2官能性物質とすることができる。適当
な2官能性物質としては、アクリル基及びO−キノンジ
アジドスルホニルエステル基、例えばアミンまたはカル
ボキシル基がアクリル基を有する成分によりそれぞれア
ンル化もしくはエステル化されたアミノ−1だはカルボ
キシ−置換フェノールのO−キノンジアジドスルホニル
エステルが挙げられる。適当なこのようなエステルとし
ては、アミノ置換フェノールとアクリロイルクロライド
またはメタアクリロイルクロライドとの反応生成物、も
しくハカルポキン置換フェノールまたはその酸塩化物と
ヒドロキソアクリルアクリレートまたはメタアクリレー
トとの反応生成物のO−キノンジアジドスルホニルエス
テルがl’られる。このようなエステルで好ましいもの
は、4−(。As already explained, the polymerizable component (5) and the radiation-solubilizable component (C) can both be present in the same molecule, ie, be a bifunctional substance. Suitable bifunctional substances include acrylic groups and O-quinonediazide sulfonyl ester groups, such as amino-1- or carboxy-substituted phenols whose amine or carboxyl groups are respectively unarylated or esterified with components containing an acrylic group. -quinone diazide sulfonyl ester. Suitable such esters include the O- The quinone diazide sulfonyl ester is l'. Preferred such esters are 4-(.
−ナフトキノンジアジドスルホニルオキシ)メタアクリ
ロイルアニリンのようなアクリロイルアミノ−まだはメ
タアクリロイルアミノ置換フェノールのO−キノンジア
ジドスルホニルエステルである。- acryloylamino such as (naphthoquinonediazide sulfonyloxy) methacryloylaniline - is still an O-quinonediazide sulfonyl ester of a methacryloylamino substituted phenol.
アクリル基とキノンジアジドスルホニルエステル基を含
む2官能性物質の重合体は、更にC)として有用な元で
可溶化可能なキノンジアジド材料の好ましい種類を構成
する。これらの重合体は単独重合体であってもよく、あ
るいは、1種以上の重合可能なエチレン性不飽和の材料
、好筐しくはアクリル酸、メタアクリル酸、アルキル及
ヒヒドロキンアルキルアクリレート及ヒメタアクリレー
トのようなアクリルモノマーとの共重合体であっても良
い。このような重合体の好ましいものとしては、上記ア
クリロイルアミノ−またはメタアクリロイルアミノ置換
フェノールのO−キノンジアジドスルホニルエステルと
アクリル酸またはメタアクリル酸及びメチルメタアクリ
レートまたは2−ヒドロキシエチルメタアクリレートと
の共重合体が挙げられる。Polymers of bifunctional materials containing acrylic groups and quinonediazide sulfonyl ester groups further constitute a preferred class of solubilizable quinonediazide materials useful as C). These polymers may be homopolymers or may contain one or more polymerizable ethylenically unsaturated materials, preferably acrylic acid, methacrylic acid, alkyl and hyhydroquine alkyl acrylates, and It may also be a copolymer with an acrylic monomer such as acrylate. Preferred examples of such polymers include copolymers of O-quinonediazide sulfonyl esters of the above-mentioned acryloylamino- or methacryloylamino-substituted phenols, acrylic acid or methacrylic acid, and methyl methacrylate or 2-hydroxyethyl methacrylate. can be mentioned.
光で可溶化可能な材料が上述した芳香族アルコール、N
−スルホニルオキン誘iJ体、オキシムスルホネートも
しくはキノンジアジドのスルホネートエステルであって
、材料それ自体が膜形成性の重合体でない場合には、水
性塩基溶解性の膜形成性重合体が、このような重合体が
段階(11)の重合により生成されない場合に液体組成
物中に含められる。好ましくはこのようなポリマーが段
階(li)で形成される場合でも液体組成物中に水性塩
基可溶性膜形成ポリマーを含ませる。The photo-solubilizable materials include the above-mentioned aromatic alcohols, N
- a sulfonyloquine derivative iJ, an oxime sulfonate or a sulfonate ester of a quinone diazide, in the case where the material itself is not a film-forming polymer, the aqueous base-soluble film-forming polymer is Included in the liquid composition if no coalescence is produced by the polymerization of step (11). Preferably, the aqueous base-soluble film-forming polymer is included in the liquid composition even if such polymer is formed in step (li).
適当な水性塩基溶解性の膜形成性重合体は、フェノール
性水酸基もしくはカルボキシル基またはスルホン酸基を
含むものである。これら重合体の例としては、末端がカ
ルボキシル基のポリエステル、エチレン性不飽和フェノ
ールの単独重合体及び共重合体、ビニルスルホン酸の単
独重合体及び共重合体が挙げられる。Suitable aqueous base-soluble film-forming polymers are those containing phenolic hydroxyl or carboxyl groups or sulfonic acid groups. Examples of these polymers include carboxyl-terminated polyesters, ethylenically unsaturated phenol homopolymers and copolymers, and vinylsulfonic acid homopolymers and copolymers.
好ましい水性塩基溶解性の膜形成性重合体としてハ、ア
セトアルデヒド、フルフルアルデヒドもL<fdベンズ
アルデヒドのようなアルデヒド、好ましくはホルムアル
デヒドと、フェノールそれ自体、p−クロロフェノール
のような1ないし2の塩素原子で置換されたフェノール
、o−、m−、及びp−クレゾール、キシレノール、p
−第三ブチルフェノール及びp−ノニルフェノールのよ
うなそれぞれ炭素原子数1ないし9の1つ以上のアルキ
ル基で置換されたフェノール、p−フェニルフェノール
、レソルシノール、ビス(4−ヒドロキシフェニル)メ
タン、2.2−ビス(4−ヒドロキンフェニル)プロパ
ン、あるいはこれらフェノールの混合物とから誘導され
るノボラック樹脂が挙げられる。Preferred aqueous base-soluble film-forming polymers include acetaldehyde, furfuraldehyde, L<fd an aldehyde such as benzaldehyde, preferably formaldehyde, and phenol itself, 1 to 2 chlorine atoms such as p-chlorophenol. Phenols, o-, m-, and p-cresols, xylenol, p-substituted with
-phenols substituted with one or more alkyl groups each having 1 to 9 carbon atoms, such as tert-butylphenol and p-nonylphenol, p-phenylphenol, resorcinol, bis(4-hydroxyphenyl)methane, 2.2 -bis(4-hydroquinphenyl)propane, or a mixture of these phenols.
他の好ましい膜形成性材料はエチレン性不飽和カルボン
酸及びカルボン酸無水物の単独重合体及び共重合体であ
る。かかる重合体にはアクリル酸、メタアクリル酸及び
マレイン酸無水物の単独重合体、並びにこれらの単量体
と1種以上の他のエチレ;メY飽和性材料、例えばエチ
レン、プロピレンのような脂肪族不飽和化合物、アクリ
ル酸及びメタアクリル酸のエステル、酢酸ビニルのよう
なビニルエステル、及びスチレンや置換されたスチレン
のようなビニル芳香族化合物との共重合体が含まれる。Other preferred film-forming materials are homopolymers and copolymers of ethylenically unsaturated carboxylic acids and carboxylic acid anhydrides. Such polymers include homopolymers of acrylic acid, methacrylic acid and maleic anhydride, as well as monopolymers of these monomers and one or more other ethylene-saturated materials, such as fats such as ethylene and propylene. Included are copolymers with group unsaturated compounds, esters of acrylic acid and methacrylic acid, vinyl esters such as vinyl acetate, and vinyl aromatic compounds such as styrene and substituted styrenes.
光で可溶化可能な成分(C)に対するカチオン重合可能
な材料もしくはフリーラジカルで重合可能な材料(2)
の重量比は両成分の効果量が使用されればよく、制限さ
れないが、(ト)と0が別々の分子にある場合には、重
量比(8):(C)は一般的に10:1ないし1:10
の範囲内にあり、5:1ないし1:2の範囲内が好まし
い。使用される重合開始剤(Blの量もまた、化学線に
対する第1の暴露の間に(5)の重合を開始するのに充
分であれば制限されないが、代表的な(B)の量は、へ
)100重量部に対して0.1ないし50重量部の範囲
内であシ、好ましくはn、5ないし10重量部の範囲内
である。Cationically polymerizable material or free radically polymerizable material for photo-solubilizable component (C) (2)
The weight ratio of (8):(C) is not limited as long as the effective amounts of both components are used, but when (g) and 0 are in separate molecules, the weight ratio (8):(C) is generally 10: 1 to 1:10
It is preferably within the range of 5:1 to 1:2. The amount of polymerization initiator (Bl) used is also not limited as long as it is sufficient to initiate polymerization of (5) during the first exposure to actinic radiation, but typical amounts of (B) are , f) Within the range of 0.1 to 50 parts by weight, preferably within the range of 5 to 10 parts by weight, per 100 parts by weight.
本発明に使用される液体組成物には、更に画像形成技術
において公知の従来より採用されている添加物を含ませ
てもよい。こうした添加物の例としては、顔料、染料、
充填剤、強化剤、難燃化剤、帯帯防止剤、均染剤、酸化
防止剤、光安定化剤及び界面活性剤が挙げられる。The liquid compositions used in the present invention may further include conventional additives known in the imaging art. Examples of such additives include pigments, dyes,
Included are fillers, reinforcing agents, flame retardants, antibanding agents, leveling agents, antioxidants, light stabilizers and surfactants.
水中で現像可能な画像形成を容易にするために親性性の
重合体を液体組成物に含ませることができる。適当な親
水性重合体にはポリエチレングリコール、ポリアクリル
アミド、ポリビニルピロリドン、好ましくは、ポリビニ
ルアルコール(加水分解されたポリビニルアセテート)
のようなポリアルキレングリコールが含まれる。Philic polymers can be included in the liquid composition to facilitate formation of images that are developable in water. Suitable hydrophilic polymers include polyethylene glycol, polyacrylamide, polyvinylpyrrolidone, preferably polyvinyl alcohol (hydrolyzed polyvinyl acetate).
Includes polyalkylene glycols such as
使用する際には、親水性重合体は一般的に組成物の[1
,5ないし20重量パーセントの量が存在する。When used, the hydrophilic polymer generally comprises [1] of the composition.
, 5 to 20 weight percent.
適当な輻射線の光源には、炭素アーク、金属ハライドラ
ンプ、水銀蒸気アーク、紫外線を放射するリンを含む螢
光ランプ、アルゴン及びキセノングローランプ、タング
ステンランプ、及び写真用投光ランプが含まれる。第1
の照射を第2の照射で使用される波長と異なる波長の輻
射線を使用して行なうことが重要である。不要の波長の
照射を遮弊するためにフィルターの使用が、この方法で
単一の広範々照射スペクトル源を使用し得る点で有利で
あるとわかるであろう。このような単一の輻射線源を使
用する場合、第1の暴露はフィルターにより成分(C)
を活性化する波長の輻射線が組成物に到達するのが防止
される。第2の暴露においては、輻射線のフィルターヲ
かけない全スペクトルが使用され、従って成分(C)の
可溶化を行なう輻射線が組成物に到達する。Suitable radiation sources include carbon arcs, metal halide lamps, mercury vapor arcs, ultraviolet-emitting phosphorous-containing fluorescent lamps, argon and xenon glow lamps, tungsten lamps, and photographic flood lamps. 1st
It is important that the irradiation is carried out using radiation of a different wavelength than that used in the second irradiation. The use of filters to block radiation at unwanted wavelengths may prove advantageous in that a single broadly illuminating spectral source can be used in this manner. When using such a single radiation source, the first exposure is by filtering component (C).
radiation at wavelengths that activate the composition is prevented from reaching the composition. In the second exposure, the full unfiltered spectrum of radiation is used, so that radiation which solubilizes component (C) reaches the composition.
光画像技術の熟練者によってよく理解されているように
、これらの輻射線源は少量の全波長域にわたる輻射線を
発する一方、多量の個有波長における輻射線、即ち波長
強度が最大となる輻射線を発する。As is well understood by those skilled in the art of optical imaging, these radiation sources emit a small amount of radiation over a full range of wavelengths, while a large amount of radiation at a distinct wavelength, i.e., the wavelength of maximum intensity. emit a line.
本明細書中の異なる波長を有する輻射線の使用につき言
及するならば、段階(n)及び段階(Il+)で使用さ
れる輻射線の最大波長強度は異なるべきであるというこ
とが理解されよう。段階(11)及び(lit)で夏用
される幅対線源が少量の輻射線を発すルスペクトル領域
の重複は一般的に本発明方法の上首尾の操作を損うこと
はないであろう。When referring herein to the use of radiation having different wavelengths, it will be understood that the maximum wavelength intensities of the radiation used in stage (n) and stage (Il+) should be different. The overlap of the spectral regions used in steps (11) and (lit) in which the source emits a small amount of radiation will generally not impair the successful operation of the method of the invention. .
第1の暴露(段階C++) )は、重合開始剤(B)を
活性化するのに充分な長さのみが必要とされ、通常、数
分で充分である。活性化に必要な時間は簡単な実験によ
り容易に測定することができる。The first exposure (step C++) only needs to be long enough to activate the polymerization initiator (B), and usually a few minutes is sufficient. The time required for activation can be easily determined by simple experiments.
活性化された開始剤(B)は、所望により有機過酸化物
または過酸化水素の存在下で成分(5)を重合させる。The activated initiator (B) polymerizes component (5), optionally in the presence of an organic peroxide or hydrogen peroxide.
開始剤CB)として式Xで表わされる化合物を使用する
場合には、重合の補助のために加熱を必要とする場合が
ある。この場合、組成物は、成分(8)を重合するため
に、例えば80℃ないし120℃の醍度で加熱すること
ができる。When using compounds of the formula X as initiators CB), heating may be necessary to assist the polymerization. In this case, the composition can be heated at a temperature of, for example, 80°C to 120°C in order to polymerize component (8).
しかし、成分(5)を重合するのに必要な時間より長く
加熱する必要はなく、数分で充分である。However, it is not necessary to heat for longer than necessary to polymerize component (5); a few minutes is sufficient.
活性化するのに必要な温度と時間もまた簡単な実験によ
り容易に測定することができる。The temperature and time required for activation can also be easily determined by simple experimentation.
記載された組成物は液体として、鋼、アルミニウム、銅
、紙、シリコンあるいはプラスチックのような支持体に
塗布することができる。塗布を行なった後、組成物を固
化するために必要な場合には加熱を伴って第1の暴露が
行なわれる。そして塗布された支持体は安定であって、
(C1?、溶解する輻射線から回避して長期間貯蔵する
ことができる。所望に応じ、塗布された支持体を第1の
暴露に使用したものと異ガる波長の化学線に画像露光が
行なわれる。第2の暴露を受けだ塗布部分は、次いで適
当な有機溶媒、もしくは、好ましくは炭酸ナトリウム希
釈水溶液または水酸化ナトリウム希釈水溶液のような塩
基性水溶液での洗浄により除去することができる。The described compositions can be applied as liquids to supports such as steel, aluminum, copper, paper, silicone or plastic. After application, a first exposure is performed, with heating if necessary to solidify the composition. and the coated support is stable,
(C1?, can be stored for long periods of time away from dissolving radiation. If desired, the coated support can be subjected to imagewise exposure to actinic radiation of a different wavelength than that used for the first exposure. The coated areas that have undergone the second exposure can then be removed by washing with a suitable organic solvent or, preferably, a basic aqueous solution such as a dilute aqueous sodium carbonate solution or a dilute aqueous sodium hydroxide solution.
第2の暴露を受けていない塗布部分は支持体上に残シ、
ポジ画像を形成する。このように本発明方法は公知の技
術を用いて印刷板や印刷回路の製造に使用することがで
きる。The coated areas not subjected to the second exposure remain on the support;
Forms a positive image. The method of the invention can thus be used for manufacturing printing plates and printed circuits using known techniques.
(実施例)
本発明は下記実施例により例示される。ここで部は他に
断シのない限ね重量部を表わす。EXAMPLES The present invention is illustrated by the following examples. Here, parts refer to parts by weight unless otherwise noted.
実施例にて使用され、樹脂■ないし■で表わされる重合
可能な、及び光で可溶化可能な材料は下記の通りである
。The polymerizable and photo-solubilizable materials used in the examples and represented by resins (1) to (2) are as follows.
樹脂■
6モルのフェノールと1モルのp−第三ブチルフェノー
ルとホルムアルデヒドから製造されたノボラ7りを1.
2−ナフトキノン−2−ジアジド−5−スルホニルクロ
ライドでフェノール性水酸基の12%をエステル化する
ように反応することにより作られた分子量1450を有
する樹脂。Resin 1. Novola 7 prepared from 6 moles of phenol, 1 mole of p-tert-butylphenol and formaldehyde.
A resin having a molecular weight of 1450 made by reacting with 2-naphthoquinone-2-diazido-5-sulfonyl chloride to esterify 12% of the phenolic hydroxyl groups.
樹脂■
1モルの2 、3 、4− ) IJヒドロキシベンゾ
フェノンと2.5モルの1.2−ナフトキノン−2−ジ
アジド−5−スルホニルクロライドとのエステル。Resin (1) Ester of 1 mol of 2,3,4-)IJ hydroxybenzophenone and 2.5 mol of 1,2-naphthoquinone-2-diazido-5-sulfonyl chloride.
樹脂I
n−ブタノール(14,5g)と粉末水酸化ナトリウム
(8g)の混合物を窒素下で70℃、1時間の加熱を行
なった。2−クロロエチルビニルエーテル(21,3g
)を11/2時間にわたって攪拌しながら滴下して加え
、70−80℃で更に5時間攪拌を続けた。得られた混
合物を冷却して沢過することにより褐色液状の21gの
2−プトキシエチルビニルエーテルヲ得た。Resin I A mixture of n-butanol (14.5 g) and powdered sodium hydroxide (8 g) was heated at 70° C. for 1 hour under nitrogen. 2-chloroethyl vinyl ether (21.3g
) was added dropwise with stirring over a period of 11/2 hours, and stirring was continued for a further 5 hours at 70-80°C. The resulting mixture was cooled and filtered to obtain 21 g of 2-ptoxyethyl vinyl ether as a brown liquid.
IR(液本、灰)2965.2’940,2880゜1
621.1328,1211,1080,968゜82
8cm−” : NMR(DMSO−d6) 0.5−
1.2 (m−7H)、3.3−4.4(m−8H)、
&5(C)−IH)δ。IR (liquid, ash) 2965.2'940, 2880°1
621.1328,1211,1080,968°82
8cm-”: NMR (DMSO-d6) 0.5-
1.2 (m-7H), 3.3-4.4 (m-8H),
&5(C)-IH)δ.
樹脂■
0−ニトロベンズアルデヒド(10a6g)、1.4−
ビス(ヒドロキシメチル)シクロヘキサン(1q2g)
、p−トルエンスルホン酸(0,2g)及びジクロロメ
タン(600fl )を還流温度で41/2時間加熱し
、この間、ディーンとスターク(Dean and 5
tark )の装置を用いて水を共沸させて排出した。Resin ■ 0-Nitrobenzaldehyde (10a6g), 1.4-
Bis(hydroxymethyl)cyclohexane (1q2g)
, p-toluenesulfonic acid (0.2 g) and dichloromethane (600 fl) were heated at reflux temperature for 41/2 hours, during which time Dean and Stark et al.
The water was azeotroped and discharged using a Tark apparatus.
次いで、混合物を温度で140℃に達するまで蒸留し、
その後140℃で16時間攪拌した。得られた混合物を
減圧下で140℃で蒸留し゛、キンレン(140FI)
で希釈することにより固形分含量66qbとした。得ら
れた溶液の1部(40g)にトリメリット酸無水物(1
2g)を加えて150℃で4時間加熱し、次いで混合物
を、減圧下、150℃で蒸留することにより、収量33
gの所望のポリエステルアセタール生成物を得だ。The mixture is then distilled at a temperature of 140°C,
Thereafter, the mixture was stirred at 140°C for 16 hours. The resulting mixture was distilled at 140°C under reduced pressure to obtain
The solid content was made to be 66 qb by diluting with. To one part (40 g) of the obtained solution was added trimellitic anhydride (1
2g) and heating at 150°C for 4 hours, the mixture was then distilled under reduced pressure at 150°C to give a yield of 33.
g of the desired polyester acetal product was obtained.
樹脂■
p−アミノフェノール(20g)、p−メトキシフェノ
ール(0,2g )、アセトン(200ゴ)及びピリジ
ン(15g)の混合物を0℃未満に冷却し、次いアメタ
アクリロイルクロライド(zig)を滴下してガロえ、
温度を0℃未満に保った。添加が完了した後、混合物を
0℃で2時間、次いで室温で2時間攪拌した。得られた
混合物を元の容量の1/6に達するまで濃縮し、次いで
希塩酸(500rnl、 p)]、= 1 )に注入し
た。Resin ■ A mixture of p-aminophenol (20g), p-methoxyphenol (0.2g), acetone (200g) and pyridine (15g) was cooled to below 0°C, and then amethacryloyl chloride (zig) was added dropwise. Garoe,
The temperature was kept below 0°C. After the addition was complete, the mixture was stirred at 0° C. for 2 hours and then at room temperature for 2 hours. The resulting mixture was concentrated to reach 1/6 of the original volume and then poured into dilute hydrochloric acid (500 rnl, p)], = 1).
形成した沈澱物をf過により集め、メタノールに溶解し
、希塩酸(5001nl、pH1)で再沈した。The formed precipitate was collected by filtration, dissolved in methanol, and reprecipitated with dilute hydrochloric acid (5001 nl, pH 1).
生成物を水性エタノールから再結晶することによj)収
量8gのp−ヒドロキシメタアクリロイルアニリドを得
た。Recrystallization of the product from aqueous ethanol yielded j) 8 g of p-hydroxymethacryloylanilide.
クロロスルホン酸(67,8g) ’k O−ナフトキ
ノンジアジド−5−スルホン酸ナトリウム塩(13,6
Fりに室温で滴下して加えた。混合物を50℃で1時間
力口熱し、次いで粉砕された氷(500g)にゆっくシ
加えた。得られた沈澱物を集め、ジオキサン(40d)
に溶解した。 こノ溶液をp−ヒドロキシメタアクリロ
イルアニリド(8g)、トリエチルアミン(4,95+
) 及びジオキサン(60mJ)に温度を0℃未満に
保ちなからゆっくシ加えた。添加が完了した後、0℃未
満で更に2時間攪拌を続けた。次いで混合物を濃塩酸(
5,9y)を含む水(1000g)に加えた。得られた
沈澱物を沢過して取出し、乾燥することにより、104
gの所望の生成物、即叡4−(0−ナフトキノンジアジ
ドスルホニルオキシ)メタアクリロイルアニリドを得だ
。Chlorosulfonic acid (67,8 g) 'k O-naphthoquinonediazide-5-sulfonic acid sodium salt (13,6
It was added dropwise at room temperature. The mixture was heated at 50° C. for 1 hour and then slowly added to crushed ice (500 g). The resulting precipitate was collected and dioxane (40d)
dissolved in This solution was mixed with p-hydroxymethacryloylanilide (8g) and triethylamine (4,95+
) and dioxane (60 mJ) were added slowly while keeping the temperature below 0°C. After the addition was complete, stirring was continued for an additional 2 hours below 0°C. The mixture was then diluted with concentrated hydrochloric acid (
5,9y) in water (1000g). By filtering the obtained precipitate and drying it, 104
The desired product, 4-(0-naphthoquinonediazidosulfonyloxy)methacryloylanilide, was obtained.
樹脂■
メチルメタアクリレート(9g)、メタアクリル酸(5
g)、樹脂v(6g)、アゾビス(インブチロニトリル
)(Q、2p)及びテトラヒドロフラン(60g)の混
合物を窒素雰囲気下60℃で6時間加熱した。次いでこ
の混合物をヘキサン(300m/)に注入し、得られた
沈澱物を集めて乾燥することにより、7.8gの所望の
重合生成物を得た。Resin■ Methyl methacrylate (9g), methacrylic acid (5g)
A mixture of g), resin v (6 g), azobis(imbutyronitrile) (Q, 2p) and tetrahydrofuran (60 g) was heated at 60° C. for 6 hours under nitrogen atmosphere. The mixture was then poured into hexane (300 m/s) and the resulting precipitate was collected and dried to obtain 7.8 g of the desired polymerization product.
下記実施例においては異なる輻射線源が使用された:
1)500Wタングステンランプ:これは450℃mを
越える輻射線を発し、これより短い波長の輻射線はフィ
ルターによりカットした。Different radiation sources were used in the following examples: 1) 500W tungsten lamp: it emits radiation above 450° C.m, and radiation at shorter wavelengths is filtered out.
2)5kW金属ハライドランプ:これは波長340ない
し450℃mの、435℃mに最大波長強度、を有する
輻射線を発する。2) 5 kW metal halide lamp: This emits radiation with a wavelength of 340 to 450° C.m, with a maximum wavelength intensity at 435° C.m.
3)中圧水銀アークランプ:これは波長20口ないし4
00℃mの365℃mに最大波長強度を有する輻射線を
発する。3) Medium pressure mercury arc lamp: This has a wavelength of 20 to 4
It emits radiation having a maximum wavelength intensity at 365°Cm between 00°Cm and 365°Cm.
実施例1
樹脂I(3部)、2−ヒドロキ7エチルメタアクリレー
ト(7部)及びビス(π−メチルシクロペンタジェニル
)−ビス(シグマヘキサンオキシテトラフルオロフェニ
ル)チタン(fV)([12部)を均一になるまで混合
した。Example 1 Resin I (3 parts), 2-hydroxy7ethyl methacrylate (7 parts) and bis(π-methylcyclopentadienyl)-bis(sigmahexaneoxytetrafluorophenyl)titanium (fV) ([12 parts) ) were mixed until homogeneous.
この混合物を銅被覆ラミネート上に36ミクロンの厚さ
に塗布した。次いで塗布したラミネートに窒素下で、4
50℃m未満の照射を遮断するフィルターを嵌めた50
0Wのタングステン−ハロゲンランプを使用し、20
nmの距離で10分間の照射を行なった。しかる後、固
化した塗膜に、透明画を通して5 kWの金属ハライド
ランプを使用し、75!の距離で2分間の照射を行なっ
た。[15%の水酸化す) IJウム水溶、液で優しく
擦って現像することにより透明画に対応したポジ画像が
得られた。This mixture was coated onto a copper coated laminate to a thickness of 36 microns. The applied laminate was then heated under nitrogen for 4
50 fitted with a filter that blocks irradiation below 50℃m
Using a 0W tungsten-halogen lamp,
Irradiation was performed for 10 minutes at a distance of nm. After that, a 5 kW metal halide lamp was used to pass the transparent film through the solidified paint film, and 75! Irradiation was performed for 2 minutes at a distance of . A positive image corresponding to a transparent image was obtained by gentle rubbing and development with a [15% hydroxide solution] IJum aqueous solution.
実施例2
樹脂i (s部)、ネオペンチルグリコールジアクリレ
ート(5部)、1.4−ブタンジオール(2,5部)及
ヒヒス(π−メチルシクロペンタジェニル)−ビス−(
シグマヘキサンオキシテトラフルオロフェニル)チタン
(IV)(o、2部)を均一になるまで混合した。Example 2 Resin i (s part), neopentyl glycol diacrylate (5 parts), 1,4-butanediol (2,5 parts) and baboon (π-methylcyclopentagenyl)-bis-(
Sigmahexaneoxytetrafluorophenyl)titanium(IV) (o, 2 parts) was mixed until homogeneous.
この混合物を銅被覆ラミネート上に36ミクロンの厚さ
に塗布した。次いで塗布したラミネートに窒素下で、実
施例1と同様の500Wのタングステン−ハロゲンラン
プを使用し、5分間の照射を行なった。しかる後、固化
した塗膜に、透明画を通して5 kWの金属ハライドラ
ップを使用し、75 cmの距離で2分間の照射を行な
った。α5%の水酸化ナトリウム水溶液で憂しく擦って
現像することにより透明画に対応したポジ画像が得ら些
だ。This mixture was coated onto a copper coated laminate to a thickness of 36 microns. The coated laminate was then irradiated for 5 minutes under nitrogen using a 500 W tungsten-halogen lamp similar to Example 1. The cured coating was then irradiated for 2 minutes at a distance of 75 cm using a 5 kW metal halide wrap through a transparency. It is difficult to obtain a positive image that corresponds to a transparent image by rubbing it with an aqueous solution of α5% sodium hydroxide and developing it.
実施例3
樹脂1(5部)、酸化α−ピネン(5部)、1.4−ブ
タンジオール(2,5部)、(π−2゜4−シクロペン
タジェン−1−イル)((1,2゜3.4,5.6−π
)−(1−メチルエチル)−ベンゼン)鉄llヘキサフ
ルオロホスフェート(Bー 3s 部)及びクメンヒド
ロペルオキシド(0,35部)を均一になるまで混合し
た。Example 3 Resin 1 (5 parts), α-pinene oxide (5 parts), 1,4-butanediol (2.5 parts), (π-2°4-cyclopentadien-1-yl) ((1 ,2゜3.4,5.6-π
)-(1-methylethyl)-benzene)iron hexafluorophosphate (B-3s parts) and cumene hydroperoxide (0.35 parts) were mixed until homogeneous.
この混合物を銅被覆ラミネート上に36ミクロンの厚さ
に塗布した。次いで塗布したラミネートに実施例1と同
様の500Wのタングステン−ハロゲンランプを使用し
、5分間の照射を行なった。しかる後、固化した塗膜に
、透明画を通して5 kWの金属ノ・ライドランプを使
用し、75 cWtの距離で2分間の照射を行なった。This mixture was coated onto a copper coated laminate to a thickness of 36 microns. The applied laminate was then irradiated for 5 minutes using a 500 W tungsten-halogen lamp similar to that used in Example 1. Thereafter, the hardened coating was irradiated for 2 minutes at a distance of 75 cWt using a 5 kW metallized lamp through the transparency.
0.5優の水酸化ナトリウム水溶液で優しく擦って現像
することにより透明画に対応したポジ画像が得られた。A positive image corresponding to a transparent image was obtained by gentle rubbing and development with a 0.5 ml aqueous sodium hydroxide solution.
実施例4
樹脂f (3部) 、2−ヒドロキシエチルメタアクリ
レート(7部)及びDL−カムホロキノン(n、5部)
を均一になる1で混合した。この混合物を銅被覆ラミネ
ート上に36ミクロンの厚さに塗布した。次いで、塗布
したラミネートに窒素下で、実施例1と同様の500W
のタングステン−ハロゲンランプを使用し、10分間の
照射を行なった。しかる後、固化した塗膜に、透明画を
通して5 kWの金属/・ライドランプを使用し、75
ctnの距離で2分間の照射を行なった。1.5係の水
酸化ナトリウム水溶液で優しく擦って現像することによ
り透明画に対応したポジ画像が得られた。Example 4 Resin f (3 parts), 2-hydroxyethyl methacrylate (7 parts) and DL-camphoroquinone (n, 5 parts)
were mixed at 1 until homogeneous. This mixture was coated onto a copper coated laminate to a thickness of 36 microns. The applied laminate was then exposed to 500 W under nitrogen as in Example 1.
Irradiation was performed for 10 minutes using a tungsten-halogen lamp. After that, a 5 kW metal/ride lamp was used to pass the transparent film through the hardened paint film, and
Irradiation was performed for 2 minutes at a distance of ctn. A positive image corresponding to a transparent image was obtained by gently rubbing and developing with a sodium hydroxide aqueous solution of ratio 1.5.
実施例5
tM脂1 (6部) 、2−ヒドロキシエチルメタアク
リレート(2部)、アクリル酸(2部)及ヒヒス(π−
メチルンクロペンタジエニル)−ビス(シグマヘキサン
オキシテトラフルオロフェニル)チタン■(α15部)
を混合した。Example 5 tM fat 1 (6 parts), 2-hydroxyethyl methacrylate (2 parts), acrylic acid (2 parts) and baboon (π-
Methylonclopentadienyl)-bis(sigmahexaneoxytetrafluorophenyl)titanium (α15 parts)
were mixed.
この混合物を銅被覆ラミネート上に66ミクロンの厚さ
に塗布した。次いで塗布したラミネートに窒素下で実施
例1と同様の500Wのタングステン−ハロゲンランプ
を使用し5分間の照射を行なった。しかる後、固化した
塗膜に、透明画を通して5 k’Wの金属ノ・ライドラ
ンプを使用し、75cmの距離で2分間の照射を行なっ
た。0.5%の水酸化す) IJウム水溶液で優しく擦
って現像することにより透明画に対応しだポジ画像が得
られた。This mixture was coated onto a copper coated laminate to a thickness of 66 microns. The coated laminate was then irradiated for 5 minutes under nitrogen using a 500 W tungsten-halogen lamp similar to Example 1. Thereafter, the solidified coating was irradiated for 2 minutes at a distance of 75 cm using a 5 k'W metallized lamp through the transparency. A positive image corresponding to a transparent image was obtained by gentle rubbing with an aqueous solution of IJ (0.5% hydroxide) and development.
実施例6
樹脂1(5部)、酸化α−ピネン(5部)、ジフェニル
ヨードニウムへキサフルオロホスフェート(α35部)
及びアクリジンオレンジ(α05部)を混合した。Example 6 Resin 1 (5 parts), α-pinene oxide (5 parts), diphenyliodonium hexafluorophosphate (α35 parts)
and acridine orange (α05 parts) were mixed.
この混合物を銅被覆ラミネート上に36ミクロンの厚さ
に途布した。次いで塗布したラミネートに実施例1と同
様の500Wのタングステン−ハロゲンランプを使用し
、5分間の照射を行なった。しかる後、固化した塗膜に
、透明画を通して5 kWの金属ハライドランプを使用
し、75crnの距離で2分間の照射を行なった。0.
5%の水酸化ナトリウム水溶液で浸しく擦って現像する
ことにより透明画に対応しだポジ画像が得られた。This mixture was spread onto a copper coated laminate to a thickness of 36 microns. The applied laminate was then irradiated for 5 minutes using a 500 W tungsten-halogen lamp similar to that used in Example 1. The solidified coating was then irradiated for 2 minutes at a distance of 75 crn using a 5 kW metal halide lamp through the transparency. 0.
A positive image corresponding to the transparency was obtained by immersing and developing with a 5% aqueous sodium hydroxide solution.
実施例7
樹脂I(5部)、ジアリルビスフェノールA(3,5部
)、エチレングリコールビスチオグリコレ−)(A5部
)及びビス(π−メチル−シクロペンタジェニル)−ビ
ス(ングマヘキサンオキシテトラフルオロフェニル)チ
タン■(0,2部)を混合した。Example 7 Resin I (5 parts), diallylbisphenol A (3.5 parts), ethylene glycol bisthioglycoleide (A5 parts) and bis(π-methyl-cyclopentadienyl)-bis(ngmahexane) (oxytetrafluorophenyl) titanium (0.2 parts) was mixed.
この混合物を銅被覆ラミネート上に66ミクロンの厚さ
に塗布した。次いで塗布したラミネートに窒素下で、実
施例1と同様の500Wのタングステン−ハロゲンラン
プを使用し、10分間の照射を行なった。しかる後、固
化した塗膜に、透明画を通して5 kWの金属ハライド
ランプを使用し、’7scYnの距離で2分間の照射を
行なった。a5%の水酸化ナトリウム水溶液で優しく擦
って現像することにより透明画に対応したポジ画像が得
られた。This mixture was coated onto a copper coated laminate to a thickness of 66 microns. The coated laminate was then irradiated for 10 minutes under nitrogen using a 500 W tungsten-halogen lamp similar to Example 1. Thereafter, the solidified coating film was irradiated for 2 minutes at a distance of '7 scYn using a 5 kW metal halide lamp through the transparency. A positive image corresponding to a transparent image was obtained by gentle rubbing with a 5% aqueous sodium hydroxide solution and development.
実施例8
樹脂r(a部)、酸化α−ピネン(5部)、1.4−ブ
タンジオール(5部)、(π−2゜4−シクロペンタジ
ェン−1−イル) ((1,2゜3.4.5.6−π)
−(1−メチルエチル)−ヘンセン)鉄■ヘキサフルオ
ロホスフェート(0,35部)を均一になるまで混合し
た。Example 8 Resin r (part a), α-pinene oxide (5 parts), 1,4-butanediol (5 parts), (π-2°4-cyclopentadien-1-yl) ((1,2゜3.4.5.6-π)
-(1-methylethyl)-hensen)iron hexafluorophosphate (0.35 parts) was mixed until homogeneous.
この混合物を銅被覆ラミネート上に12ミクロンの厚さ
に塗布した。次いで塗布したラミネートに窒素下で、実
施例1と同様の500Wのタングステン−ハロゲンラン
プを使用し、1゜分間の照射を行なった。しかる後、固
化した塗膜に、透明画を通して5 kWの金属ハライド
ランプを使用し、75crnの距離で2分間の照射を行
なった。1%の水酸化ナトリウム水溶液で優しく擦って
現像することにより透明画に対応したポジ画像が得られ
た。This mixture was coated onto a copper coated laminate to a thickness of 12 microns. The coated laminate was then irradiated for 1° under nitrogen using a 500 W tungsten-halogen lamp similar to that used in Example 1. The solidified coating was then irradiated for 2 minutes at a distance of 75 crn using a 5 kW metal halide lamp through the transparency. By gently rubbing and developing with a 1% aqueous sodium hydroxide solution, a positive image corresponding to a transparent image was obtained.
実施例9
W脂11(5部)、2−ヒドロキンエチルメタアクリレ
ート(6部)及びビス(π−メチルシクロペンタジェニ
ル)−ビス(シグマヘキサンオキソテトラフルオロフェ
ニル)チタン(IY)(02部)を均一になるまで攪拌
した。Example 9 W fat 11 (5 parts), 2-hydroquine ethyl methacrylate (6 parts) and bis(π-methylcyclopentadienyl)-bis(sigmahexaneoxotetrafluorophenyl)titanium (IY) (02 parts) ) was stirred until homogeneous.
この混合物を銅被覆ラミネート上に12ミクロンの厚さ
に塗布した。次いで塗布したラミネートに窒素下で、実
施例1と同様の500Wのタングステン−ハロゲンラン
プを使用し、5分間の照射を行なった。しかる後、固化
した塗膜に透明画を通して5 kWの金属ハライドラン
プを使用し、75部mの距離で3分間の照射を行なった
。0.5%の水酸化ナトリウム水溶液で優しく擦って現
像することにより透明画に対応したポジ画像が得られた
。This mixture was coated onto a copper coated laminate to a thickness of 12 microns. The coated laminate was then irradiated for 5 minutes under nitrogen using a 500 W tungsten-halogen lamp similar to Example 1. Thereafter, the solidified coating film was irradiated for 3 minutes at a distance of 75 m using a 5 kW metal halide lamp through a transparency. By gently rubbing and developing with a 0.5% aqueous sodium hydroxide solution, a positive image corresponding to a transparent image was obtained.
実施例10
樹脂1(3部)、樹脂1(7部)及び(π−2,4−シ
クロペンタジェン−1−イル)((1゜2.3,4,5
.6−π)=(1−メチルエチル)−ベンゼン)鉄■ヘ
キサフルオロホスフェート(0,35部)を均一になる
まで混合した。Example 10 Resin 1 (3 parts), Resin 1 (7 parts) and (π-2,4-cyclopentadien-1-yl) ((1°2.3,4,5
.. 6-π)=(1-methylethyl)-benzene)iron■hexafluorophosphate (0.35 parts) was mixed until homogeneous.
この混合物を銅被覆ラミネート上に66ミクロンの厚さ
に塗布した。次いで塗布したラミネートに実施例1と同
様の500Wのタングステン−ハロゲンランプを使用し
、2分間の照射を行なった。しかる後、固化した塗膜に
、透明画を通して5 kWの金属ハライドランプを使用
し、75ctrLの距離で2分間の照射を行なった。0
.5易の水酸化ナトリウム水溶液で慶しく擦って現像す
ることにより透明画に対応したポジ画像が得られた。This mixture was coated onto a copper coated laminate to a thickness of 66 microns. The coated laminate was then irradiated for 2 minutes using the same 500 W tungsten-halogen lamp as in Example 1. Thereafter, the solidified coating was irradiated for 2 minutes at a distance of 75 ctrL using a 5 kW metal halide lamp through the transparency. 0
.. A positive image corresponding to a transparent image was obtained by rubbing and developing with a 5-component aqueous sodium hydroxide solution.
実施例11
’fldmrv(s部)、2−ヒドロキシエチルメタア
クリレート(5部)及びビス(π−メチルシクロペンタ
ジェニル)−ビス(シグマヘキサンオキソテトラフルオ
ロフェニル)チタン■(Q、2部)を均一になるまで混
合した。Example 11 'fldmrv (s part), 2-hydroxyethyl methacrylate (5 parts) and bis(π-methylcyclopentagenyl)-bis(sigmahexaneoxotetrafluorophenyl)titanium (Q, 2 parts) Mixed until homogeneous.
この混合物を銅被覆ラミネート上に36ミクロンの厚さ
に塗布した。次いで塗布したラミネートに窒素下で、実
施例1と同様の500Wのタングステン−ハロゲンラン
プを使用し、10分間の照射を行なった。しかる後、固
化した塗膜に、透明画を通して5 kWの金属ハライド
ランプを使用し、75crrLの距離で4分間の照射を
行なった。2%の炭酸ナトリウム水溶液で憂しく擦って
現像することにより透明画に対応したポジ画像が得られ
た。This mixture was coated onto a copper coated laminate to a thickness of 36 microns. The coated laminate was then irradiated for 10 minutes under nitrogen using a 500 W tungsten-halogen lamp similar to Example 1. Thereafter, the solidified coating was irradiated for 4 minutes at a distance of 75 crrL using a 5 kW metal halide lamp through the transparency. By rubbing and developing with a 2% aqueous sodium carbonate solution, a positive image corresponding to a transparency was obtained.
実施例12
樹脂I(5部)、6.4−エポキシシクロヘキシルメチ
ル−3′、4′−エボキシシクロヘキサンカルボキシレ
ート(5部)、1.4−ブタンジオール(2,s部L
トリフェニルスルホニウムへキサフルオロアンチモネー
ト(α5部)及びプロピレンカーボネート(cL5部)
全均一になる壕で混合した。この混合物を銅被覆ラミネ
ート上に24ミクロンの厚さに塗布した。次いで塗布し
たラミネートに365nmに最大波長強度を有する中圧
水銀アークランプ下で、20譚の距離で15秒間の照射
を行ない塗膜を固化した。しかる後、固化した塗膜に透
明画を通して435nmに最大波長強度を有する5 k
Wの金属ハライドランプを用いて75c、の距離で3分
間の照射を行なった。[15%の水酸化ナトリウム水溶
液で優しく擦って現像することにより透明画に対応した
ポジ画像が得られた。Example 12 Resin I (5 parts), 6,4-epoxycyclohexylmethyl-3',4'-epoxycyclohexanecarboxylate (5 parts), 1,4-butanediol (2,s part L
Triphenylsulfonium hexafluoroantimonate (α5 parts) and propylene carbonate (cL5 parts)
It was mixed in a trench until it was completely homogeneous. This mixture was coated onto a copper coated laminate to a thickness of 24 microns. The coated laminate was then irradiated for 15 seconds at a distance of 20 steps under a medium pressure mercury arc lamp with maximum wavelength intensity at 365 nm to harden the coating. Thereafter, a 5K film having a maximum wavelength intensity at 435 nm was passed through a transparency through the solidified coating.
Irradiation was performed for 3 minutes at a distance of 75 cm using a W metal halide lamp. [A positive image corresponding to a transparent image was obtained by gentle rubbing and development with a 15% aqueous sodium hydroxide solution.
実施例13
樹MV(5部)、2−ヒドロキシエチルメタアクリレー
ト(7部)及びビス(π−メチルシクロペンタジェニル
)ビス(シグマヘキサンオキシテトラフルオロフェニル
)チタン■(0,2部)を均一になるまで混合した。Example 13 Wood MV (5 parts), 2-hydroxyethyl methacrylate (7 parts) and bis(π-methylcyclopentadienyl)bis(sigmahexaneoxytetrafluorophenyl)titanium (0.2 parts) were uniformly mixed. Mixed until .
この混合物金銅被覆ラミネート上に12ミクロンの厚さ
に塗布した。次いで塗布したラミネートに窒素下で、実
施例1と同様の500Wのタングステン−ハロゲンラン
プを使用し、71/2分間の照射を行なった。しかる後
、固化した塗膜に、透明画を通してs kWの金属ハラ
イドランプを使用し、75c、の距離で2分間の照射を
行なった。0.5%の水酸化す) IJウム水溶液で浸
しく擦って現像することにより透明画に対応しだポジ画
像が得られた。This mixture was coated onto a gold copper coated laminate to a thickness of 12 microns. The coated laminate was then irradiated for 71/2 minutes under nitrogen using a 500 W tungsten-halogen lamp similar to Example 1. Thereafter, the hardened coating was irradiated for 2 minutes at a distance of 75 cm using a s kW metal halide lamp through the transparency. A positive image corresponding to a transparent image was obtained by immersing the film in an aqueous solution of IJ (0.5% hydroxide) and developing it.
実施例14
mtiVl(3部)、2−ヒドロキソエチルメタアクリ
レート(7部)及びビス(π−メチル7クロベンタジエ
ニル)ビス(シグマヘキサンオキシテトラフルオロフェ
ニル)チタン■(0,2部)を均一になる捷で混合した
。Example 14 mtiVl (3 parts), 2-hydroxoethyl methacrylate (7 parts) and bis(π-methyl7chlorobentadienyl)bis(sigmahexaneoxytetrafluorophenyl)titanium (0.2 parts) were uniformly mixed. Mixed with a sieve.
この混合物を銅被覆ラミネート上に12ミクロンの厚さ
に塗布した。次いで塗布したラミネートに窒素下で、実
施例1と同様の500Wの(1■)
タングステン−ハロゲンランプを使用し、5分間の照射
を行なった。しかる後、固化した塗膜に、透明画を通し
て5 kWの金属ハライドランプを使用し、75Cmの
距離で2分間の照射を行なった。0.5%の水酸化ナト
リウム水溶液でほしく擦って現像することにより透明画
に対応したポジ画1象が得られた。This mixture was coated onto a copper coated laminate to a thickness of 12 microns. The coated laminate was then irradiated for 5 minutes under nitrogen using a 500 W (1.5 cm) tungsten-halogen lamp similar to that used in Example 1. Thereafter, the solidified coating film was irradiated for 2 minutes at a distance of 75 cm using a 5 kW metal halide lamp through the transparency. By rubbing with a 0.5% aqueous sodium hydroxide solution and developing, a positive image corresponding to a transparent image was obtained.
Claims (14)
能な成分、 (B)(A)のための輻射線で活性化される重合開始剤
及び (C)輻射線で可溶化される成分を含む液体組成物の層
を塗布し、 (ii)前記(B)を活性化するものの前記(C)を実
質的に活性化することのない波長を有する輻射線を前記
組成物に当て、次いで所望により加熱を行ない、液体組
成物の層を固化するように前記(A)を重合し、 (iii)前記固化された層が未暴露領域よりも暴露領
域が現像剤により、より一層溶解性となるように、前記
固化された層を所定のパターンで、段階(ii)で使用
した輻射線とは異なり、前記成分(C)を活性化する波
長を有する輻射線に当て、そして (iv)前記暴露領域を現像剤により処理して除去する
ことを特徴とする画像形成方法。(1) (i) a support comprising: (A) a cationically polymerizable or free radically polymerizable component; (B) a radiation-activated polymerization initiator for (A); and (C) applying a layer of a liquid composition containing a radiation-solubilized component; (ii) radiation having a wavelength that activates said (B) but does not substantially activate said (C); (A) is applied to said composition and then, optionally heated, polymerizes said (A) so as to solidify the layer of liquid composition; (iii) said solidified layer is developed in exposed areas more than in unexposed areas; Radiation having a wavelength which activates said component (C), unlike the radiation used in step (ii), in a predetermined pattern to make said solidified layer more soluble. and (iv) treating and removing the exposed area with a developer.
開始剤及び [1]少なくとも1種の重合可能な成分(A)を有する
物質と、少なくとも1種の(B)を活性化するのとは異
なる波長の輻射線で活性化される輻射線で可溶化される
成分(C)を有する物質との混合、 あるいは [2]少なくとも1種の同一分子中に重合可能な成分(
A)と(B)を活性化するのとは異なる波長の輻射線で
活性化される輻射線で可溶化される成分(C)とを有す
る2官能基性物質、あるいは [3]少なくとも1種の重合可能な成分(A)を有する
物質及び/又は少なくとも1種の輻射線で可溶化される
成分(C)を有する物質を伴なう少なくとも1種の輻射
線で可溶化される成分(C)を有する物質を伴なう少な
くとも1種の前記2官能基性物質を含む特許請求の範囲
第1項記載の方法。(2) the liquid composition comprises (B) a radiation-activated polymerization initiator and [1] a substance having at least one polymerizable component (A); or [2] at least one polymerizable component (C) in the same molecule, which is activated by radiation of a different wavelength than
A) and a component (C) which is activated by radiation of a different wavelength than that which activates (B) and is solubilized by radiation; or [3] at least one kind. at least one radiation-solubilized component (C) with a material having a polymerizable component (A) and/or a material having at least one radiation-solubilized component (C). 2. A method according to claim 1, comprising at least one of said difunctional substances with a substance having the following properties:
不飽和基とチオール基の混合物である特許請求の範囲第
1項又は第2項記載の方法。(3) The method according to claim 1 or 2, wherein (A) is an ethylenically unsaturated group or a mixture of an ethylenically unsaturated group and a thiol group.
原子数1ないし4のアルキル基を表わす。) で表わされる基を有するエステルである特許請求の範囲
第3項記載の方法。(4) (A) has the following formula CH_2=C(R^1)COO-I (wherein R^1 represents hydrogen, chlorine, a bromine atom, or an alkyl group having 1 to 4 carbon atoms) 4. A method according to claim 3, which is an ester having the group represented.
リレートである特許請求の範囲第4項記載の方法。(5) The method according to claim 4, wherein (A) is a monoacrylate or a monomethacrylate.
ノールとポリチオールの混合物である特許請求の範囲第
3項記載の方法。(6) The method according to claim 3, wherein (A) is a mixture of a phenol and a polythiol substituted with two or more allyl groups.
ンエーテル、ハロゲン化アルキルもしくはアリール誘導
体、芳香族カルボニル誘導体、メタロセン、第IVA族有
機金属化合物と光還元染料の混合物、キノン、脂肪族ジ
カルボニル化合物、3−ケトクマリン、アシルホスフィ
ンオキシド、金属カルボニルあるいは光還元染料と還元
剤の混合物である特許請求の範囲第1項ないし第6項の
うちいずれか1項記載の方法。(7) The initiator (B) is a benzoin ether, an acyloin ether, a halogenated alkyl or aryl derivative, an aromatic carbonyl derivative, a metallocene, a mixture of a Group IVA organometallic compound and a photoreductive dye, a quinone, an aliphatic dicarbonyl 7. The method according to any one of claims 1 to 6, which is a mixture of a compound, a 3-ketocoumarin, an acylphosphine oxide, a metal carbonyl, or a photoreducing dye and a reducing agent.
もしくはこれらの混合物である特許請求の範囲第1項ま
たは第2項記載の方法。(8) The method according to claim 1 or 2, wherein (A) is 1,2-epoxide, vinyl ether or a mixture thereof.
^−^q(VII)〔式中、 Lは2価ないし7価の金属もしくは非金属を表わし、 Tはハロゲン原子を表わすか、またはTのひとつがヒド
ロキシル基を表わし、 qは1ないし3の整数を表わし、 mはL+qの価数に相当する整数を表わし、aは1もし
くは2を表わし、 nは1ないし3の整数を表わし、並びに R^1^0は、 (i)芳香族ヨードニウムイオン (ii)次式: 〔G−Z−(CO)_x〕^+ (式中、Gはアレーンもしくはジエニリウム基を表わし
、Zはチタン、バナジウム、クロム、マンガン、鉄、コ
バルト、ニッケル、銅、ニオブ、モリブデン、ルテニウ
ム、ロジウム、パラジウム、銀、タンタル、タングステ
ン、レニウム、オスミウム、イリジウム、白金及び金か
ら選択されるd−ブロックの遷移元素の原子を表わし、
並びにXは、Zが閉殻電子配置であるような正の整数を
表わす。)で表わされる基; (iii)芳香族ジアゾニウムイオン; (iv)〔(R^1^1)(R^1^2M)_a〕^+
^a^n(式中、aは1又は2を表わし、nは1ないし
3の整数を表わし、Mは周期表の第IVbないしVIIb族
、第VII族もしくは第 I b族からの1価ないし3価のカ
チオンを表わし、R^1^1はπ−アレーンを表わし、
並びにR^1^2はπ−アレーンもしくはπ−アレーン
のアニオンを表わす。)で表わされる基; (v)芳香族スルホニウムイオン;または (vi)芳香族スルホキソニウムイオン (vii)ヨードシルイオン から選択されたイオンを表わす。〕で表わされる化合物
である特許請求の範囲第8項記載の方法。(9) The initiator (B) has the following formula (VII) [R^1^0]^+^a^n (an/q) [LT_m]
^-^q (VII) [In the formula, L represents a divalent to heptavalent metal or nonmetal, T represents a halogen atom, or one of the T represents a hydroxyl group, and q represents 1 to 3. represents an integer, m represents an integer corresponding to the valence of L + q, a represents 1 or 2, n represents an integer from 1 to 3, and R^1^0 is (i) aromatic iodonium ion (ii) The following formula: [G-Z-(CO)_x]^+ (wherein, G represents an arene or dienylium group, and Z represents titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, niobium , represents an atom of a d-block transition element selected from molybdenum, ruthenium, rhodium, palladium, silver, tantalum, tungsten, rhenium, osmium, iridium, platinum and gold;
and X represents a positive integer such that Z is a closed shell electron configuration. ); (iii) aromatic diazonium ion; (iv) [(R^1^1)(R^1^2M)_a]^+
^a^n (wherein a represents 1 or 2, n represents an integer of 1 to 3, M is a monovalent or represents a trivalent cation, R^1^1 represents π-arene,
Further, R^1^2 represents π-arene or an anion of π-arene. ) represents an ion selected from (v) aromatic sulfonium ion; or (vi) aromatic sulfoxonium ion (vii) iodosyl ion. ] The method according to claim 8, wherein the compound is a compound represented by:
ルアセタールもしくはそのポリエステル誘導体または末
端をキャップした誘導体、鎖中にベンゾイン基を含む樹
脂、スルホネートエステル基のα位またはβ位にカルボ
ニル基を含む芳香族アルコールのスルホン酸エステル、
芳香族N−スルホニルオキシイミドもしくは芳香族オキ
シムスルホネートである特許請求の範囲第1項ないし第
9項のうちいずれか1項記載の方法。(10) (C) is O-quinonediazide, nitrophenyl acetal or its polyester derivative or end-capped derivative, resin containing a benzoin group in the chain, aromatic containing a carbonyl group at the α- or β-position of the sulfonate ester group sulfonic acid esters of group alcohols,
The method according to any one of claims 1 to 9, which is an aromatic N-sulfonyloxyimide or an aromatic oxime sulfonate.
ジドスルホニルエステル基を有する2官能基性物質を含
む特許請求の範囲第1項ないし5項、第7項及び第10
項のうちいずれか1項記載の方法。(11) Claims 1 to 5, 7, and 10, wherein the liquid composition contains a bifunctional substance having an acrylic group and an O-quinonediazide sulfonyl ester group.
The method described in any one of the following paragraphs.
体を含む特許請求の範囲第10項または11項記載の方
法。(12) The method according to claim 10 or 11, wherein the liquid composition comprises an aqueous base-soluble film-forming polymer.
われる特許請求の範囲第1項ないし第12項のうちいず
れか1項記載の方法。(13) A method according to any one of claims 1 to 12, wherein step (iv) is carried out by treatment with an aqueous base.
タロセンまたはIVA族有機金属化合物と光還元染料から
なる(A)のための輻射縁で活性化される重合開始剤、
及び (C)輻射線で可溶化される成分を含み、前記成分(C
)が、(B)が活性化される波長とは異なる波長の輻射
線で活性化されるものである ことを特徴とする液体組成物。(14) a radiant-edge activated polymerization initiator for (A) consisting of (A) a free radically polymerizable component; (B) a metallocene or Group IVA organometallic compound and a photoreducible dye;
and (C) a component that is solubilized by radiation;
) is activated by radiation having a wavelength different from that at which (B) is activated.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB8630129 | 1986-12-17 | ||
GB868630129A GB8630129D0 (en) | 1986-12-17 | 1986-12-17 | Formation of image |
GB8709520 | 1987-04-22 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63163452A true JPS63163452A (en) | 1988-07-06 |
Family
ID=10609151
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP32002187A Pending JPS63163452A (en) | 1986-12-17 | 1987-12-17 | Image formation |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPS63163452A (en) |
GB (1) | GB8630129D0 (en) |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5596942A (en) * | 1979-01-19 | 1980-07-23 | Matsushita Electric Ind Co Ltd | Method and apparatus for producing minute pattern |
JPS55148423A (en) * | 1979-05-07 | 1980-11-19 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Method of pattern formation |
JPS58114032A (en) * | 1981-12-28 | 1983-07-07 | Fujitsu Ltd | Formation of pattern |
JPS61173245A (en) * | 1985-01-28 | 1986-08-04 | Fujitsu Ltd | Formation of photoresist pattern |
JPS622253A (en) * | 1985-06-19 | 1987-01-08 | チバ−ガイギ− アクチエンゲゼルシヤフト | Formation of image |
JPS62273529A (en) * | 1986-05-10 | 1987-11-27 | チバ−ガイギ− アクチエンゲゼル シヤフト | Image formation |
-
1986
- 1986-12-17 GB GB868630129A patent/GB8630129D0/en active Pending
-
1987
- 1987-12-17 JP JP32002187A patent/JPS63163452A/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5596942A (en) * | 1979-01-19 | 1980-07-23 | Matsushita Electric Ind Co Ltd | Method and apparatus for producing minute pattern |
JPS55148423A (en) * | 1979-05-07 | 1980-11-19 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Method of pattern formation |
JPS58114032A (en) * | 1981-12-28 | 1983-07-07 | Fujitsu Ltd | Formation of pattern |
JPS61173245A (en) * | 1985-01-28 | 1986-08-04 | Fujitsu Ltd | Formation of photoresist pattern |
JPS622253A (en) * | 1985-06-19 | 1987-01-08 | チバ−ガイギ− アクチエンゲゼルシヤフト | Formation of image |
JPS62273529A (en) * | 1986-05-10 | 1987-11-27 | チバ−ガイギ− アクチエンゲゼル シヤフト | Image formation |
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