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JPS6315572B2 - - Google Patents

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Publication number
JPS6315572B2
JPS6315572B2 JP21105384A JP21105384A JPS6315572B2 JP S6315572 B2 JPS6315572 B2 JP S6315572B2 JP 21105384 A JP21105384 A JP 21105384A JP 21105384 A JP21105384 A JP 21105384A JP S6315572 B2 JPS6315572 B2 JP S6315572B2
Authority
JP
Japan
Prior art keywords
mask
ion beam
signal
scanning
electrical signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP21105384A
Other languages
Japanese (ja)
Other versions
JPS6188261A (en
Inventor
Hideaki Kyogoku
Takashi Minafuji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SEIKO DENSHI KOGYO KK
Original Assignee
SEIKO DENSHI KOGYO KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SEIKO DENSHI KOGYO KK filed Critical SEIKO DENSHI KOGYO KK
Priority to JP59211053A priority Critical patent/JPS6188261A/en
Publication of JPS6188261A publication Critical patent/JPS6188261A/en
Publication of JPS6315572B2 publication Critical patent/JPS6315572B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72Repair or correction of mask defects
    • G03F1/74Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Description

【発明の詳細な説明】 a 産業の利用分野 本発明は、半導体集積回路製造工程で使用され
るフオトマスクのイオンビームによるマスクリペ
アー装置において、マスクの欠陥部の観察や、欠
陥部の修正領域の指定を行う際に、マスクを損傷
することなく行える画像表示装置に関するもので
ある。
Detailed Description of the Invention: a Field of Industrial Application The present invention is a mask repair device using an ion beam for a photomask used in a semiconductor integrated circuit manufacturing process, which is used to observe defective parts of a mask and designate areas for repairing the defective parts. The present invention relates to an image display device that can perform image processing without damaging a mask.

b 従来の技術 イオンビームをマスク上に照射してマスクの欠
陥部の修正を行う装置は、従来、イオンビームを
マスク面上に集束して走査しながら、その時に発
生する二次荷電粒子の強度を二次荷電粒子検出器
で電気的信号に変換し、該出力信号を画像表示装
置の映像信号入力として導き、画像表示装置に表
示されるマスクの欠陥部を観察しながら、欠陥修
正領域の指定等を行い、イオンビームをマスクに
照射して欠陥部の修正を行つている。
b. Prior Art Conventionally, an apparatus for repairing defective parts of a mask by irradiating the mask with an ion beam focuses the ion beam on the mask surface and scans it, while measuring the intensity of secondary charged particles generated at that time. is converted into an electrical signal by a secondary charged particle detector, and the output signal is guided as a video signal input of an image display device. While observing the defective part of the mask displayed on the image display device, the defect correction area is designated. The defects are corrected by irradiating the mask with an ion beam.

c 発明が解決しようとする問題点 b項で説明した方法では、イオンビームをマス
ク上に走査しながら、その時に発生する二次荷電
粒子強度を二次荷電粒子検出器で電気的信号に変
換して、該出力信号を画像表示装置の映像信号入
力に導いて、該画像を観察しながら、欠陥部の確
認、修正領域の指定を行おうとすると、これらの
作業の間は、常にイオンビームがマスクを照射す
ることになるために、マスクのイオンビームが照
射されて領域は、イオンビームのエツチング作用
によりマスクは削られてしまう。このように不要
にマスクをイオンビームにより削つてしまうと、
第2図に示すように、壁ができてしまつたり、エ
ツチングされて飛ばされたものが堆積して山を作
つたりするために、本来の目的である露光する時
に、光を透過させずに乱反射をして、あたかもク
ロムパターンがあるかのごとくに露光されてしま
うという不都合がある。
c Problems to be solved by the invention In the method described in section b, while scanning an ion beam over a mask, the secondary charged particle intensity generated at that time is converted into an electrical signal by a secondary charged particle detector. When trying to confirm the defective part and designate the repair area while observing the image by guiding the output signal to the video signal input of the image display device, the ion beam is always masked during these operations. Therefore, the area of the mask that is irradiated with the ion beam is etched by the etching action of the ion beam. If the mask is unnecessarily removed by the ion beam,
As shown in Figure 2, walls are formed, and things that have been etched and blown away accumulate and form mountains, making it difficult for light to pass through during the original purpose of exposure. This has the disadvantage that it causes diffuse reflection and is exposed as if it were a chrome pattern.

d 問題点を解決しようとする手段 イオンビームマスク上をマスク上を走査された
時発生する二次荷電粒子強度を二次荷電粒子検出
器で電気信号に変換し、該電気信号を記憶回路に
導き、記憶開始信号によつて、ブランキング電極
に印加されている電圧をオフして、イオンビーム
をマスク上に照射し、該開始信号によりフレーム
走査を開始し、二次荷電粒子検出器からの電気信
号は記憶回路で記憶を開始し、1フレームの走査
が完了すると、走査完了信号が発生し、該完了信
号によりブランキング電極に所定の電圧を印加し
てイオンビームのマスク上への照射を停止し、欠
陥領域等の観察、修正領域の指定等を、記憶回路
に記憶された映像信号を画像表示装置の映像信号
入力へ導いて得られる画像によつて行おうとする
手段。
d Means for solving the problem The intensity of secondary charged particles generated when the ion beam mask is scanned is converted into an electrical signal by a secondary charged particle detector, and the electrical signal is guided to a memory circuit. In response to the memory start signal, the voltage applied to the blanking electrode is turned off, the ion beam is irradiated onto the mask, frame scanning is started in accordance with the start signal, and the electricity from the secondary charged particle detector is The signal starts to be stored in the memory circuit, and when one frame of scanning is completed, a scanning completion signal is generated, and according to the completion signal, a predetermined voltage is applied to the blanking electrode to stop irradiation of the ion beam onto the mask. A means for observing a defective area, specifying a correction area, etc. using an image obtained by guiding a video signal stored in a storage circuit to a video signal input of an image display device.

e 作用 前記記憶開始信号により、イオンビームの照射
及び走査を開始し、その時発生する二次荷電粒子
の強度を二次荷電粒子検出器で電気信号に変換し
その電気信号を記憶回路へ導き、1フレームの走
査完了信号によりイオンビームの照射を停止し
て、以降の操作を記憶回路に記憶された映像信号
を、画像表示装置へ導いて得られる画像により、
マスクの観察及び、欠陥領域の修正を行おうとす
るものである。
e Effect: In response to the storage start signal, irradiation and scanning of the ion beam is started, the intensity of the secondary charged particles generated at that time is converted into an electrical signal by a secondary charged particle detector, and the electrical signal is guided to the storage circuit. Ion beam irradiation is stopped in response to a frame scanning completion signal, and subsequent operations are performed using images obtained by guiding the video signal stored in the memory circuit to the image display device.
The objective is to observe the mask and correct defective areas.

f 実施例 以下、図面に従つて本発明の実施例を説明す
る。第1図において、液体金属イオン源1から放
出されたイオンビームは、通常プランキング電極
2により偏向され、マスク3に照射されずにいる
が、記憶開始スイツチ4をオンすると、走査信号
発生器5からの走査信号が、走査信号増幅器6に
より増幅され、偏向電極7に印加された走査が開
始される。同時に、走査信号発生器からブランキ
ング解除信号が発生し電圧増幅器8により増幅
し、イオンビームをマスク上に集束レンズ9によ
り集束され、前記作用により走査される。イオン
ビームマスク上を走査されることにより発生する
二次荷電粒子強度を二次荷電粒子検出器10によ
り電気信号に変換し、映像信号増幅器11で増幅
し、該アナログ信号をアナログ・デイジタル変換
器12によりデイジタル量に変換し、記憶回路1
3へ走査信号発生器から出力される記憶制御信号
により順次記憶する。1フレームの走査が終了す
ると走査信号発生器から、ブランキング信号が発
生し、ブランキング電圧増幅器により増幅されイ
オンビームがブランキングされイオンビームのマ
スク上への照射が停止される。同時に、走査信号
発生器からの記憶制御信号が停止され記憶回路へ
の記憶は停止される。又、走査信号発生器から表
示開始信号が発生し、記憶回路へ記憶されたデイ
ジタル量を、画像表示装置15の走査信号発生器
16から発生する読み出し制御信号により読み出
し、デイジタル、アナログ変換器17によりアナ
ログ信号に変換し、映像信号増幅器18により増
幅し、画像表示装置の走査信号発生器の走査信号
により走査される画像表示装置の映像信号入力と
して導くことによつて、不要なビームを照射する
ことなく、マスクの欠陥部や、欠陥修正領域の観
察が行える。
f Examples Examples of the present invention will be described below with reference to the drawings. In FIG. 1, the ion beam emitted from the liquid metal ion source 1 is normally deflected by the planking electrode 2 and is not irradiated onto the mask 3, but when the storage start switch 4 is turned on, the scanning signal generator 5 The scanning signal from is amplified by the scanning signal amplifier 6 and applied to the deflection electrode 7 to start scanning. At the same time, an unblanking signal is generated from the scanning signal generator and amplified by the voltage amplifier 8, and the ion beam is focused by the focusing lens 9 onto the mask and scanned by the aforementioned action. The secondary charged particle intensity generated by scanning the ion beam mask is converted into an electrical signal by the secondary charged particle detector 10, amplified by the video signal amplifier 11, and converted into an analog signal by the analog-to-digital converter 12. is converted into a digital quantity by
3 and 3 are sequentially stored in accordance with a storage control signal output from a scanning signal generator. When one frame of scanning is completed, a blanking signal is generated from a scanning signal generator, amplified by a blanking voltage amplifier, blanking the ion beam, and stopping irradiation of the ion beam onto the mask. At the same time, the storage control signal from the scanning signal generator is stopped and storage in the storage circuit is stopped. Further, a display start signal is generated from the scanning signal generator, and the digital quantity stored in the storage circuit is read out by the readout control signal generated from the scanning signal generator 16 of the image display device 15, and the digital quantity is read out by the digital to analog converter 17. To irradiate the unnecessary beam by converting it into an analog signal, amplifying it by the video signal amplifier 18, and guiding it as a video signal input of the image display device that is scanned by the scanning signal of the scanning signal generator of the image display device. Therefore, it is possible to observe defective parts of the mask and defect repair areas.

記憶するためのイオンビームの走査時間と、記
憶後の走査時間はそれぞれ適切な時間が選択され
る。又、記憶するための走査を1フレームだけと
したが、2回以上走査して、二次荷電粒子検出器
からの信号を加算しても良い、すなわちイオンビ
ーム電流を減らして走査回数を増やすことは、結
局はマスクの損傷の度合は同じだからである。
Appropriate times are selected as the ion beam scanning time for storing and the scanning time after storing. Also, although only one frame was scanned for storage, it is also possible to scan two or more times and add the signals from the secondary charged particle detector, that is, reduce the ion beam current and increase the number of scans. This is because, in the end, the degree of damage to the mask is the same.

又、前記実施例には図示しないが、二つの走査
信号発生器を1つとし、記憶するための走査時、
画像表示装置も走査し、記憶しながら観察する機
能を付加することは容易に実現できる。
Although not shown in the embodiment, the two scanning signal generators are combined into one, and during scanning for storage,
It is easily possible to add the function of scanning an image display device and observing while storing the image.

又、二次荷電粒子検出器として g 発明の効果 以上、説明してきたようにマスクの損傷を避け
るために、マスク上へのイオンビームの走査を1
回とし、その時の二次荷電粒子強度を二次荷電粒
子検出器で検出しそれを記憶回路へ導き、記憶回
路へ記憶された信号によりマスクの画像を表示し
それによつて、種々の操作を行うことによつて、
不要なイオンビームの照射を避けることができ
る。
In addition, as a secondary charged particle detector, g
The intensity of the secondary charged particles at that time is detected by a secondary charged particle detector, which is guided to the memory circuit, and the image of the mask is displayed based on the signal stored in the memory circuit, and various operations are performed based on the signal stored in the memory circuit. By the way,
Unnecessary ion beam irradiation can be avoided.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本願発明によるマスクリペア装置を示
めす。第2図は本願発明を説明するための図であ
る。 10……2次イオン検出器、13……記憶回
路。
FIG. 1 shows a mask repair apparatus according to the present invention. FIG. 2 is a diagram for explaining the present invention. 10... Secondary ion detector, 13... Memory circuit.

Claims (1)

【特許請求の範囲】[Claims] 1 液体金属イオン源等の高輝度イオン源からの
イオンビームを荷電粒子光学系により、マスク面
上に集束して走査し、その時に発生する二次荷電
粒子強度を、二次荷電粒子検出器により電気的信
号に変換し、該電気的信号を画像表示装置の映像
信号入力として導き、マスクの欠陥部等を観察す
るイオンビームによるマスクリペアー装置におい
て、該電気的信号をデジタル信号に変換した後、
記憶回路に保持し、該記憶回路の出力によりマス
クの画像を表示することを特徴とするイオンビー
ムによるマスクリペアー装置。
1. An ion beam from a high-brightness ion source such as a liquid metal ion source is focused and scanned onto the mask surface using a charged particle optical system, and the intensity of the secondary charged particles generated at that time is detected using a secondary charged particle detector. In a mask repair device using an ion beam, which converts the electrical signal into an electrical signal and guides the electrical signal as a video signal input of an image display device to observe defective parts of the mask, after converting the electrical signal into a digital signal,
1. A mask repair device using an ion beam, which is stored in a memory circuit and displays an image of the mask based on the output of the memory circuit.
JP59211053A 1984-10-08 1984-10-08 Mask repairing device by ion beam Granted JPS6188261A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59211053A JPS6188261A (en) 1984-10-08 1984-10-08 Mask repairing device by ion beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59211053A JPS6188261A (en) 1984-10-08 1984-10-08 Mask repairing device by ion beam

Publications (2)

Publication Number Publication Date
JPS6188261A JPS6188261A (en) 1986-05-06
JPS6315572B2 true JPS6315572B2 (en) 1988-04-05

Family

ID=16599604

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59211053A Granted JPS6188261A (en) 1984-10-08 1984-10-08 Mask repairing device by ion beam

Country Status (1)

Country Link
JP (1) JPS6188261A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2569057B2 (en) * 1987-07-10 1997-01-08 株式会社日立製作所 X-ray mask defect repair method
JP3331127B2 (en) * 1995-08-22 2002-10-07 株式会社東芝 Mask defect repair apparatus and repair method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5856332A (en) * 1981-09-30 1983-04-04 Hitachi Ltd Correction of defect in mask and device thereof
JPS58196020A (en) * 1982-05-12 1983-11-15 Hitachi Ltd Inspection of mask for defect, correcting method and its apparatus
JPS60126834A (en) * 1983-12-14 1985-07-06 Hitachi Ltd Ion beam processing method and device thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5856332A (en) * 1981-09-30 1983-04-04 Hitachi Ltd Correction of defect in mask and device thereof
JPS58196020A (en) * 1982-05-12 1983-11-15 Hitachi Ltd Inspection of mask for defect, correcting method and its apparatus
JPS60126834A (en) * 1983-12-14 1985-07-06 Hitachi Ltd Ion beam processing method and device thereof

Also Published As

Publication number Publication date
JPS6188261A (en) 1986-05-06

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