JPS63125676A - Film formation by sputtering - Google Patents

Abstract

PURPOSE:To permit exact and speedy setting of conditions and to stabilize film quality by monitoring the plasma state near a substrate and controlling discharge electric power and convergent magnetic field, etc. CONSTITUTION:High-frequency of DC glow discharge is generated between electrodes 2 and 3 to excite plasma 4. The ions in the plasma are accelerated by an electric field and are projected to a target 5. The sputtered particles are stuck on the substrate 7 to form the film thereof on the substrate. A monitor 8 is provided in the plasma near the place where said film is formed. Signals are sent by the output thereof to a convergent magnetic field controller 11 and a frequency power controller 12, by which the discharge power source and convergent magnetic field are controlled.

Description

[Detailed Description of the Invention] (Industrial Application Field) The present invention is a method for controlling a film formed in the S, IE stumbling method (including cases in which a magnetic field is applied, such as the magnetron method) using high frequency or DC glow discharge. It is related to.

(Prior art) Conventionally, in film forming methods based on sputtering phenomena that utilize high frequency or direct current glow discharge, the position of the substrate relative to the discharge area and target, discharge gas pressure, mixed gas partial pressure, film forming rate, temperature, etc. has been considered as a parameter, and these have been controlled to maintain the desired properties of the produced film constant.

However, there are factors that inhibit this. For example, in the case of sintered substrates, even if the material is the same, the sintering state or surface roughness may cause the sulfate rate to change even if other film formation conditions are constant. It fluctuates considerably. Therefore, in order to obtain a constant film quality, it is usually necessary to control the discharge power to keep the sputtering rate constant, which varies depending on the conditions of the heater, and to deal with the accompanying change in the film forming temperature by controlling the substrate heater. A method is used. However, when the discharge power is changed in order to keep the film formation rate constant, the spatial density of the plasma changes, and the amount of ions or radicals that reach the substrate changes, which significantly affects the characteristics of the growing film. It was confirmed that there was a change.

(Objective of the Invention) The present invention has been made to improve the above-mentioned drawbacks, and the present invention is designed to improve the plasma state (mainly plasma density and temperature) near the substrate at any time so as to keep the plasma state (mainly plasma density and temperature) constant. The purpose is to monitor and control the discharge power, focused magnetic field, etc. to obtain a film with predetermined characteristics with good reproducibility.

(Structure of the Invention) Plasma is generated using high frequency or direct current glow discharge (methods that spatially increase plasma density using a magnetic field etc. are considered to be a variation of these methods), and the neon present in the plasma is generated using an electric field. A method in which the particles are accelerated and their kinetic energy is made sufficiently larger than the binding energy of the substances that make up the target object, and the particles are then thrown into the target object to form a film on the target object, or they are ionized in plasma. It is already well known that a method is known in which tourniquet components, which have been smeared or dripped in plasma, are formed into a film on a target object through a chemical reaction of substances that have become radicals. It is also well known that since the film is formed in plasma, ions, electrons, neutral high-velocity particles, radicals, etc. from the plasma affect the properties of the produced film.

Conventionally, methods such as adjusting the positional relationship between the object and plasma or target 8 to produce a film of the desired quality, or trapping the smudges in a magnetic field using magnetron discharge have been used. The amount of particles in the above state incident on the substrate has been adjusted. However, this is determined based on the relationship between the quality of the film produced, the discharge power, and the position of the substrate, and as mentioned above, even if the roughness of the target or the sintering density changes slightly, the speed will vary. However, when trying to keep the film formation rate constant by controlling the discharge power, there are problems such as having to reconfigure parameters such as the substrate position and formation temperature in order to obtain the formation conditions that will produce the same film quality again. According to the inventor's research, this is probably due to changes in the state of plasma at the substrate position due to changes in discharge power, which has a large effect on changes in film quality. It was found that it is necessary to maintain a constant plasma state in the vicinity of the film in order to stabilize the film quality.

(Example) FIG. 1 shows an example of implementing the present invention.

The inside of the Pelger 1 is in a vacuum state, and plasma 4 is generated by high frequency power applied between the two-part electrode 2 and the lower electrode 3.
is caused. Usually the frequency of high frequency is 13, 56 MH
At step 7, the surface of the target 5 is negatively biased due to the difference in mobility between ions and electrons, and is bombarded with positive ions. Further, the shape of the plasma 4 is controlled by controlling the current applied to the coil 6 for converging the plasma 4.

Even if other conditions are the same, if the target 5 or the jig (not shown) is replaced, the film formation rate on the substrate 7 changes due to this change, which will have a large effect on the film quality. This is thought to be the case, and the solution is to change the discharge power to return it to the value before replacement. At this time, as mentioned above, the state of the plasma 4 is changing, but the monitor 8
The plasma measurement device 9 measures the plasma density and plasma temperature through the plasma controller 1.
Send to 0. The plasma controller 10 sends signals to the convergence magnetic field controller 11 and the high frequency power controller 12 so that the plasma density and temperature at the substrate position are in a predetermined state.

Other than that, there is no difference from the conventional method in that the substrate temperature is controlled by the substrate heater 13 and the substrate heater controller 14, and the groove and ivy pressures are controlled by the gas flow rate controller 15.

The monitor 8 has a pair of probes 16 exposed in the plasma, and this and the plasma measuring device 9 are connected by an insulated conductor 17, and the plasma measuring device 9 and the plasma controller 10 are connected to each other by a plasma density Information about the same temperature is transmitted in parallel through conductors 18 and 19, respectively.

(Effects of the Invention) Although this invention is configured as described above, even if the film forming conditions change due to replacement of the 8-node or jig, there is almost no need to readjust the conditions based on the film quality as a parameter. It has become possible to obtain stable film quality without any problems, and it has become possible to set conditions accurately and in a short time.

[Brief explanation of the drawing]

FIG. 1 shows the configuration of an apparatus for carrying out the present invention.
・Plasma, 5・Turkey 8t, 6・Plasma convergence coil, 7...Substrate, 8...Monitor, 9...Plasma measuring device, 10...Plasma controller, 11
... Convergent magnetic field controller, 12... High frequency power controller. Applicant: Japan Aviation Electronics Industry, Ltd. #1 Figure

Claims (1)

[Claims] A method in which a plasma is excited by a sputtering method using high frequency or direct current glow discharge, ions in the plasma are accelerated by an electric field, and the ions are incident on a target, and the sputtered particles are deposited on the target object to form a film. , a sputtering film-forming method in which a monitor is installed in the plasma near where the film is formed, and the discharge power source and focused magnetic field are controlled.