JPS63102049A - Optical information recording medium - Google Patents
Optical information recording mediumInfo
- Publication number
- JPS63102049A JPS63102049A JP61247747A JP24774786A JPS63102049A JP S63102049 A JPS63102049 A JP S63102049A JP 61247747 A JP61247747 A JP 61247747A JP 24774786 A JP24774786 A JP 24774786A JP S63102049 A JPS63102049 A JP S63102049A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- recording medium
- optical information
- information recording
- reflective layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 29
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000010409 thin film Substances 0.000 claims abstract description 21
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000001301 oxygen Substances 0.000 claims abstract description 7
- 229910052714 tellurium Inorganic materials 0.000 claims abstract description 7
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims abstract description 3
- 239000000203 mixture Substances 0.000 claims description 10
- 239000010408 film Substances 0.000 abstract description 24
- 238000007740 vapor deposition Methods 0.000 abstract description 7
- 238000001704 evaporation Methods 0.000 abstract description 3
- 230000003647 oxidation Effects 0.000 abstract description 3
- 238000007254 oxidation reaction Methods 0.000 abstract description 3
- 230000008020 evaporation Effects 0.000 abstract description 2
- 239000011159 matrix material Substances 0.000 abstract description 2
- 229910003069 TeO2 Inorganic materials 0.000 abstract 3
- LAJZODKXOMJMPK-UHFFFAOYSA-N tellurium dioxide Chemical compound O=[Te]=O LAJZODKXOMJMPK-UHFFFAOYSA-N 0.000 abstract 3
- 239000010410 layer Substances 0.000 description 48
- 239000000463 material Substances 0.000 description 8
- 230000035945 sensitivity Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 241000243142 Porifera Species 0.000 description 2
- 229910004160 TaO2 Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- NQKXFODBPINZFK-UHFFFAOYSA-N dioxotantalum Chemical compound O=[Ta]=O NQKXFODBPINZFK-UHFFFAOYSA-N 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 235000012461 sponges Nutrition 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 241000218691 Cupressaceae Species 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Landscapes
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、光・熱などを用いて高速かつ高密度に情報を
記録・再生する光学的情報記録媒体に関するものである
。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to an optical information recording medium that records and reproduces information at high speed and with high density using light, heat, and the like.
従来の技術
レーザ光をレンズ系によって収束させると直径がその光
の波長のオーダの小さな光スポットを作ることが出来る
。従って小さい出力の光源からでも単位面積あたシのエ
ネルギ密度の高い光スポットを作ることが可能である。BACKGROUND OF THE INVENTION When laser light is converged by a lens system, a small light spot with a diameter on the order of the wavelength of the light can be created. Therefore, it is possible to create a light spot with high energy density per unit area even from a light source with a small output.
これを情報の記録・再生に利用・したものが光学的情報
記録媒体である。Optical information recording media utilize this for recording and reproducing information.
以下、「光記録媒体」あるいは単に「媒体」と記3”−
”
述する。Hereinafter referred to as "optical recording medium" or simply "medium"3"-
” states.
光記録媒体の基本的な構造は表面が平坦な基板上にレー
ザスポット光照射によって何らかの状態が変化する記録
薄膜層を設けたものである。信号の記録・再生は以下の
ような方法を用いる。すなわち、媒体を例えばモータ等
による回転手段により回転させ、この媒体の記録薄膜面
上にレーザ光をレンズ系によって収束し照射する。記録
薄膜はレーザ光を吸収し昇温する。レーザ光の出力をあ
る閾値以上に大きくすると記録薄膜の状態が変化して情
報が記録される。この閾値は記録薄膜自体の特性の他に
基材の熱的な特性・ディスクの光スポットに対する相対
速度等に依存する量である。The basic structure of an optical recording medium is that a recording thin film layer whose state changes in some way by laser spot light irradiation is provided on a substrate with a flat surface. The following methods are used to record and reproduce signals. That is, the medium is rotated by a rotating means such as a motor, and laser light is focused and irradiated onto the recording thin film surface of the medium by a lens system. The recording thin film absorbs the laser light and increases its temperature. When the output of the laser beam is increased above a certain threshold, the state of the recording thin film changes and information is recorded. This threshold value is a quantity that depends on the characteristics of the recording thin film itself, the thermal characteristics of the base material, the relative speed of the disk to the light spot, etc.
記録された情報は記録部に前記閾値よりも十分低い出力
のレーザ光スポットを照射し、その透過光強度あるいは
反射光強度あるいはそれらの偏光方向等何らかの光学的
特性が記録部と未記録部で異なることを検出して再生す
る。The recorded information is obtained by irradiating the recording section with a laser beam spot with an output sufficiently lower than the threshold value, and some optical characteristics such as the transmitted light intensity, reflected light intensity, or their polarization direction are different between the recorded section and the unrecorded section. Detect and play.
従って、小さいレーザパワーで状態が変化し、大きな光
学的変化を示す材料および構造が空寸れる。この課題に
対する対策として米国RCA社の提案している、三層構
造(Tri−1ager 5tructure)と呼ば
れる記録媒体構造がある。(ベル アンドスポング(B
ell and Spong)、アイ イー イーイー
(I EEE )ジャーナル オブ クオンタム エレ
クトロニクX(1−Quantum EIectron
ics ) 、 Vol QE−1a煮7 Ju
ly 197s)。Therefore, materials and structures that change state with small laser powers and exhibit large optical changes are available. As a countermeasure to this problem, there is a recording medium structure called a tri-layer structure (Tri-1 ager 5 structure) proposed by RCA, USA. (Bell and Spong (B)
ELL and Spong), IEEE Journal of Quantum Electronics
ics), Vol QE-1a ni 7 Ju
ly 197s).
これは記録薄膜層の他に光の金属反射層を透明な誘電体
層をはさんで設け、光の干渉効果を利用して光の吸収効
率を高めかつ反射率変化を大きく得られる構造である。In addition to the recording thin film layer, this structure has a metal reflective layer sandwiched between transparent dielectric layers, and utilizes the interference effect of light to increase light absorption efficiency and achieve large changes in reflectance. .
また記録薄膜が薄くても吸収効率を確保することが可能
で単位体積あたりの記録層の吸収エネルギーが大きく高
感度の記録媒体が得られる。Further, even if the recording thin film is thin, absorption efficiency can be ensured, and a recording medium with high absorption energy per unit volume of the recording layer and high sensitivity can be obtained.
発明が解決しようとする問題点
三層構造の光記録媒体は上記のような利点を有するが次
のような問題点を有している。Problems to be Solved by the Invention Although the three-layer optical recording medium has the above-mentioned advantages, it also has the following problems.
反射層に熱伝導率の高い金属を用いているので、吸収さ
れた熱が反射層に逃げ記録薄膜層の昇温を妨げ、感度に
限界がある。Since a metal with high thermal conductivity is used for the reflective layer, the absorbed heat escapes to the reflective layer and prevents the temperature of the recording thin film layer from rising, which limits the sensitivity.
6 ベーン
また金属反射層が経時的に酸化して反射率が変化し記録
感度・反射率変化等が経時劣化する。またノイズも上昇
する。この結果媒体全体の寿命が短かい。6 The vane or the metal reflective layer oxidizes over time and the reflectance changes, causing recording sensitivity, reflectance changes, etc. to deteriorate over time. Noise also increases. As a result, the life of the entire medium is short.
問題点を解決するだめの手段
基板上に光照射により状態の変化する記録薄膜層とテル
ル(Te)、パラジウム(Pa)および酸素からなる反
射層を設ける。Means for Solving the Problems A recording thin film layer whose state changes upon irradiation with light and a reflective layer made of tellurium (Te), palladium (Pa) and oxygen are provided on a substrate.
作 用
本発明によれば、熱伝導率の小さい材料を用いて反射層
を形成することが可能で熱的に効率の良い三層構造の光
学記録媒体を得ることが出来る。Effects According to the present invention, a reflective layer can be formed using a material with low thermal conductivity, and a thermally efficient three-layer optical recording medium can be obtained.
また、反射層の耐熱性・耐湿性が良く記録媒体の寿命を
向上させることが出来る。Further, the reflective layer has good heat resistance and moisture resistance, and can improve the life of the recording medium.
実施例
第1図に示すように、基板1上にTe 、 Pd 、O
からなる反射層2を設け、その上に誘電体層3を設け、
さらにその上に記録薄膜層4を設け、光学情報記録媒体
とする。この媒体に対してレーザ光7を照射し情報信号
を記録または再生する。Example As shown in FIG. 1, Te, Pd, O
A reflective layer 2 is provided, a dielectric layer 3 is provided thereon,
Further, a recording thin film layer 4 is provided thereon to form an optical information recording medium. A laser beam 7 is irradiated onto this medium to record or reproduce information signals.
s’<−′’
本発明において用いるTe、Pd、Oからなる反射層に
ついて以下に記述する。s'<-'' The reflective layer made of Te, Pd, and O used in the present invention will be described below.
この組成の材料は化学的にはT e O2とTe およ
びPdTe からなっておりそれらの混合物と考えら
れる。このような材料を形成するにはいくつかの方法が
考えられるが、代表的なものをあげると、3源蒸着が可
能な蒸着機を用いて、それぞれのソースからT e O
2、T e p P d を蒸着する。また2源ソー
スを用いる場合は、一方からPd を蒸着し、他力から
はT e O2とT e O2f一部還元する作用を有
する金属粉末、例えば、A$、Cu、Fe、Crなどを
混在させ、所定の温度で熱処理したものを用いて、Ta
O2とTe f同時に蒸着し、基板上にTaO2゜Te
、Pd の混合物を形成する。また1源ソースを用い
る場合は、前記2源ソースを用いる場合のT e O2
とTe を蒸着する側のソースにPd も混在させて、
T e 02 、 T e 、 P d f 1源よ
p蒸着することも可能である。Chemically, the material with this composition consists of T e O2, Te, and PdTe, and is considered to be a mixture thereof. There are several methods that can be considered to form such a material, but a typical one is to use a vapor deposition machine capable of three-source vapor deposition to deposit T e O from each source.
2. Deposit T e p P d. In addition, when using a two-source source, Pd is evaporated from one source, and metal powder that has the effect of partially reducing T e O2 and T e O2f, such as A$, Cu, Fe, Cr, etc., is mixed from the other source. Ta
O2 and Te f are simultaneously deposited, and TaO2°Te is deposited on the substrate.
, forming a mixture of Pd. In addition, when using a single source source, T e O2 when using the above two source source
Pd is also mixed in the source on the side where Te and Te are evaporated,
It is also possible to perform p-evaporation from T e 02 , T e , P d f 1 sources.
このようにして作られたTe、Pd、O膜はT eO2
からなるマトリクス中にTeおよびPdTeが分散7
′′−7
して存在しT eO2がTeの酸化を抑制する働きをす
ること、およびPdTeが非常に安定な化合物で酸化し
にくいことから、全体として耐湿性の良い薄膜を得るこ
とが出来る。The Te, Pd, O film made in this way is T eO2
Te and PdTe are distributed in a matrix consisting of 7
Since PdTe is present as PdTe and has a function of suppressing the oxidation of Te, and PdTe is a very stable compound and is difficult to oxidize, a thin film with good moisture resistance can be obtained as a whole.
またTeおよびPdTeにより膜の光学定数(屈折率に
および消衰係数k)は大きな値を取ることが出来、反射
層として十分な反射率を得ることが出来る。Furthermore, the optical constants (refractive index and extinction coefficient k) of the film can take large values due to Te and PdTe, and sufficient reflectance can be obtained as a reflective layer.
さらに酸化物であるT e O2が膜の熱伝導率を下げ
、記録時に反射層へ熱が逃げるのを抑制することが期待
できる。Furthermore, it is expected that T e O2, which is an oxide, lowers the thermal conductivity of the film and suppresses heat escaping to the reflective layer during recording.
以上述べた特徴は各成分の組成比に依存する。The characteristics described above depend on the composition ratio of each component.
耐湿性を左右するのはT e O2量とPdTe量であ
り、光学定数に寄与するのは主としてTe量である。丑
た熱伝導率に対してはTaO2とTe 、 PdTeの
比が関係している。The amount of T e O2 and the amount of PdTe affect the moisture resistance, and the amount of Te mainly contributes to the optical constant. The thermal conductivity is related to the ratio of TaO2, Te, and PdTe.
本発明では酸素Oの含有量は、Te、O,Pd の総
和に対して20〜60atm%であるが、2Oatm係
以下では耐湿性に劣り、逆に60 atm %を超える
と、光学定数が低くなって反射層としての機能を十分果
さなくなる。In the present invention, the content of oxygen O is 20 to 60 atm % based on the total of Te, O, and Pd, but if it is less than 2 O atm %, the moisture resistance will be poor, and if it exceeds 60 atm %, the optical constant will be low. As a result, it no longer functions as a reflective layer.
本発明の範囲内で反射層の必須成分であるTe。Te is an essential component of the reflective layer within the scope of the present invention.
0、Pdについての特に好ましい組成は、Pdが8〜3
5 atm%で、かつ酸素は30〜55 atm%であ
る。A particularly preferable composition for Pd is 8 to 3 Pd.
5 atm%, and oxygen is 30-55 atm%.
次に反射層特性の組成依存性のデータを示す。Next, data on composition dependence of reflective layer properties will be shown.
サンプルは3源蒸着が可能な電子ビーム蒸着機を用いて
、T e O2、T e 、 P dfそれぞれのソー
スから、150rpmで回転するホルダー上にとりつけ
たガラス基板上(18X18Xt0.2M) に蒸着
して作成した。蒸着は真空度1×1σ5Torr以下で
行ない、薄膜の厚さは40nm とした。各ソースから
の蒸着速度は記録薄膜中のTe、O,Pdの原子数の割
合を調整するためにいろいろと変化させた。Using an electron beam evaporator capable of three-source evaporation, the sample was evaporated from T e O 2 , T e , and P df sources onto a glass substrate (18 x 18 x t 0.2 M) mounted on a holder rotating at 150 rpm. Created by Vapor deposition was performed at a vacuum level of 1×1σ5 Torr or less, and the thickness of the thin film was 40 nm. The deposition rate from each source was varied in order to adjust the ratio of the number of Te, O, and Pd atoms in the recording thin film.
上記方法により作成した種々の光ディスクのオージェ電
子分光法(以下AESと略す)による元素分析結果と、
サンプル膜の反射率(波長830nm;反射率50係以
上を○と評価)および耐湿性試験の結果を第1表に記す
。耐湿性試験はサンプルを50℃、90%RH中に放置
することにより行な9ページ
い、第1表における耐湿性評価は、10日口の状態が顕
微鏡観察で何ら変化の認められないものが○で、多少の
変化が認められたものが△、結晶化が進んで黒い模様が
認められたもの、あるいは膜中のTeが酸化して透過率
が増大したものを×とした。Elemental analysis results by Auger electron spectroscopy (hereinafter abbreviated as AES) of various optical discs created by the above method,
Table 1 shows the reflectance of the sample film (wavelength: 830 nm; a reflectance of 50 or more is evaluated as ○) and the results of the moisture resistance test. The moisture resistance test was carried out by leaving the sample at 50°C and 90% RH. ○ indicates that some changes were observed, and △ indicates that crystallization progressed and a black pattern was observed, or that the transmittance increased due to oxidation of Te in the film.
(ノー/下(白)
10″−ノ
第1表
11′ゝ−/゛
第1表から明らかなように、反射率が50%以上で、か
つ耐湿性の良好なTe、O,Pd 系薄膜の組成(総
合評価において6以上)は、Pdが5〜40atm%で
、酸素は20〜60atm%である。(No/Bottom (White) 10''-No Table 1 11'-/゛As is clear from Table 1, a Te, O, Pd-based thin film with a reflectance of 50% or more and good moisture resistance. The composition (6 or more in overall evaluation) is 5 to 40 atm % of Pd and 20 to 60 atm % of oxygen.
さらに好ましい組成(総合評価で○)は、Pdが8−3
5 atm%、○ij 30−55 atm%であるこ
とがわかる。A more preferable composition (○ in overall evaluation) has Pd of 8-3
5 atm%, ○ij 30-55 atm%.
第3図ばTe34042Pd24組成の光学定数から、
ガラス基板上に形成した時の反射率の膜厚依存性を算出
した結果を示している。比較の為にAu(O,2+5.
04i)、A#(2,os+7.15i)のデータも示
している。第3図よシTe、O,Pd膜は膜厚が20
nm以上で反射率40係以上が得られるまた膜厚70
nm以上では反射率は飽和している。From the optical constants of Te34042Pd24 composition in Figure 3,
It shows the results of calculating the film thickness dependence of reflectance when formed on a glass substrate. For comparison, Au(O, 2+5.
04i) and A# (2, os+7.15i) are also shown. As shown in Figure 3, the thickness of the Te, O, and Pd films is 20 mm.
A reflectance of 40 coefficient or more can be obtained at a film thickness of 70 nm or more.
The reflectance is saturated above nm.
熱的な影響を考慮すると膜厚は薄い方が良いから、反射
層として有用な膜厚範囲は20〜70nmであるといえ
る。Considering thermal effects, the thinner the film thickness, the better, so it can be said that the range of film thickness useful as a reflective layer is 20 to 70 nm.
AuおよびAlは飽和反射率はそれぞれ97係。Au and Al each have a saturation reflectance of 97.
86係と大きいが熱的な影響が大きく膜厚としては20
nm(反射率は、それぞれ73%、77係)近辺がむし
ろいい結果を与えている。Although it is large at 86 mm, the thermal effect is large and the film thickness is 20 mm.
A value in the vicinity of nm (reflectance of 73% and 77%, respectively) gives rather good results.
第4図にT @ s 4042 P d 24 f 4
0nmガラス基板上に設けたサンプルの50℃80係雰
囲気における反射率変化のデータを示す。A u (2
0n m) +Al (20nm )のデータも比較の
為に示している。In Figure 4 T @ s 4042 P d 24 f 4
Data on changes in reflectance of a sample provided on a 0 nm glass substrate in an atmosphere of 50° C. and 80° C. is shown. A u (2
0nm) +Al (20nm) data are also shown for comparison.
Alは酸化されて10日で反射率が半減するがTe、O
,Pd 膜およびAu膜は40日間変化が見られなか
った。Al is oxidized and its reflectance is halved in 10 days, but Te, O
, Pd film and Au film showed no change for 40 days.
次に図面を参照しながら本発明を説明する。Next, the present invention will be explained with reference to the drawings.
第1図は本発明による光学情報記録部材の断面図である
。FIG. 1 is a sectional view of an optical information recording member according to the present invention.
1は基板であり、金属2例えばアルミニウム。1 is a substrate, and metal 2 is, for example, aluminum.
銅等、ガラス、例えば、石英、パイレックス、ソーダガ
ラス等、あるいは樹脂2例えばABS樹脂。copper etc., glass such as quartz, pyrex, soda glass etc., or resin 2 such as ABS resin.
ポリスチレン、アクリル、ポリカーボネート、塩ビ等、
又透明フィルムとしては、アセテート、テフロン、ポリ
エステル等が使用できる。中でも、ポリカーボネート、
アクリル板等を使用する場合、透明性がすぐれており、
形成せしめた信号像を光学的に再生する際に有効である
。polystyrene, acrylic, polycarbonate, vinyl chloride, etc.
Further, as the transparent film, acetate, Teflon, polyester, etc. can be used. Among them, polycarbonate,
When using acrylic plates, etc., transparency is excellent,
This is effective when optically reproducing a formed signal image.
13″−ン
2は前述のTe 、 Pd 、Oからなる反射層であり
基板1上に前述のように蒸着、スパッタリング等で形成
される。The reflective layer 13''-2 is made of Te, Pd, and O, and is formed on the substrate 1 by vapor deposition, sputtering, etc. as described above.
3は誘電体からなる層で、誘電体としては均質な薄膜を
形成するものならどのようなものでも使用できる。Reference numeral 3 denotes a layer made of a dielectric material, and any material that forms a homogeneous thin film can be used as the dielectric material.
S 102 、 T z○2. ZnO、MCl0 等
の酸化物、SiC等の炭化物、SiN、BN等の窒化物
、ZnS 、 CdS 。S 102, T z○2. Oxides such as ZnO and MCl0, carbides such as SiC, nitrides such as SiN and BN, ZnS, and CdS.
PbS 等の硫化物あるいはこれらの複合物が使える。Sulfides such as PbS or composites thereof can be used.
誘電体層2はその材料に応じて蒸着あるいはスパッタリ
ング法で反射層2上に形成される。The dielectric layer 2 is formed on the reflective layer 2 by vapor deposition or sputtering depending on the material.
4Vi記録層でレーザ光照射によって変形あるいは光学
定数の変化を生ずる薄膜材料が使える。For the 4Vi recording layer, a thin film material that can be deformed or have its optical constants changed by laser beam irradiation can be used.
変形を用いるものとしてはBi 、Teあるいはこれら
を主成分とする金属薄膜、Te f含む化合物薄膜が知
られている。また光学定数が変化するものとしては、ア
モルファスアルコゲン化物がある。As for those using deformation, Bi, Te, metal thin films containing these as main components, and compound thin films containing Tef are known. Further, as substances whose optical constants change, there are amorphous alkogenides.
T、e l ” ek初めとして、Te [As、S、
Si、Se。T, e l ” ekInitially, Te [As, S,
Si, Se.
Sb、Bi等を添加した例が知られている。Examples are known in which Sb, Bi, etc. are added.
今ひとつの実施態様として、第2図に示すもの14′″
−′
がある。これは基板1上に誘電体層5、記録層4示2の
誘電体層3さらにTe、Pd、Oからなる反射層2を前
記と同様な方法で設けさらに樹脂等による保護層6を設
けたものである。記録再生用のレーザ光は基板1全通し
て入射させる。この構造は記録膜が外部からのゴミキズ
等から保護されるので実用的な構造であるが、記録膜と
しては穴あきタイプのものは使えない。As another embodiment, the one shown in FIG.
−′ is present. In this method, a dielectric layer 5, a recording layer 4, a dielectric layer 3, a reflective layer 2 made of Te, Pd, and O are provided on a substrate 1 in the same manner as described above, and a protective layer 6 made of resin or the like is further provided. It is something. A laser beam for recording and reproduction is made incident through the entire substrate 1. This structure is a practical structure because it protects the recording film from dust and scratches from the outside, but a perforated type cannot be used as the recording film.
央=檜=肴
透明なポリメチルメタアクリレートPMMA基板(tl
、2)上VCR電体ZnS を100 nm スパッ
タリング法で形成しさらに記録層として(Te65G2
oSe15)7oSb3゜で示される薄膜を4源のエレ
クトロンビーム蒸着法により形成しさらにZnS f
170 nm同様にスパッタリング法で形成した。こ
の上VCG源のエレクトロンビーム蒸着法によりT l
it s 4042Pd24反射層を形成しさらにPM
MA板(tl、2)’&紫外線硬化樹脂で接着して保護
層を形成した。同様の構造で反射層としてAuおよびA
l全エレクトロンビーム法で蒸15”
着したものも用意した(膜厚はAu、Alともに20n
m)。Center: Cypress: Transparent polymethyl methacrylate PMMA substrate (tl
, 2) A 100 nm thick ZnS film was formed as a recording layer (Te65G2
A thin film of oSe15)7oSb3° was formed by a four-source electron beam evaporation method, and then ZnS f
It was formed by the sputtering method in the same way as the 170 nm layer. Furthermore, T l
It s 4042Pd24 to form a reflective layer and further PM
MA plate (tl, 2)' was adhered with UV curable resin to form a protective layer. Similar structure with Au and A as reflective layers
A 15" film deposited using the all-electron beam method was also prepared (the film thickness was 20 nm for both Au and Al).
m).
このサンプル[NAo、5 の対物レンズを用いて波長
830 nmの半導体レーザ光を収束させて記録再生の
実験を行った。第5図に記録パワーと反射率変化のデー
タを示す。反射率変化は再生光パワー1 mWで記録前
後の反射光量を測定して算出した。第5図により反射層
にTe、O,Pd 膜を使った場合、記録パワー2m
Wで変化しておりA−4?、Auを反射層に用いたもの
よシ感度が良いことが確かめられた。また記録パワーを
大きくしていった場合の飽和反射率変化値はAu、A/
を反射層に使った場合とほぼ等しく、反射率変化に対す
る寄与もAu、Alに匹敵する特性を示していると言え
る。Recording and reproducing experiments were conducted using this sample [NAo, 5] objective lens to converge semiconductor laser light with a wavelength of 830 nm. FIG. 5 shows data on recording power and reflectance change. The change in reflectance was calculated by measuring the amount of reflected light before and after recording using a reproduction light power of 1 mW. As shown in Figure 5, when a Te, O, Pd film is used for the reflective layer, the recording power is 2 m.
It changes with W and is A-4? It was confirmed that the sensitivity was better than that using Au for the reflective layer. Also, when the recording power is increased, the saturation reflectance change value is Au, A/
It can be said that the contribution to the change in reflectance is almost the same as when Au and Al are used for the reflective layer, and the characteristics are comparable to those of Au and Al.
発明の効果
本発明の光学的情報記録媒体は、従来例に較べて、記録
感度が高く、かつ耐湿性に優れ寿命の長い光学的情報記
録媒体である。Effects of the Invention The optical information recording medium of the present invention has higher recording sensitivity, better moisture resistance, and longer life than conventional examples.
第1図は本発明の一実施例における光学情報記録媒体を
示す模式断面図、第2図は本発明の他の実施例を示す模
式断面図、第3図は本発明に用いる反射層と従来例に用
いる反射層の反射率の膜厚依存性全比較するグラフ、第
4図は本発明の実施例における光学情報記録媒体と従来
例の感度特性を比較するグラフ、第5図は本発明に用い
る反射層と従来例に用いる反射層の耐湿性を比較するグ
ラフである。
1・・・・・基板、2・・・・・反射層、3,5・・・
・・・誘電体層、4・・・・−・記録層、6・・・保護
層、7・・・・記録・再生元。
代理人の氏名 弁理士 中 尾 敏 男 ほか1名城
悼第4図
庭、N時間(B)
第ジ図
θ 246,9/θ
レーリニバフ−(77?W)FIG. 1 is a schematic cross-sectional view showing an optical information recording medium in one embodiment of the present invention, FIG. 2 is a schematic cross-sectional view showing another embodiment of the present invention, and FIG. A graph comparing the film thickness dependence of the reflectance of the reflective layer used in the example, Figure 4 is a graph comparing the sensitivity characteristics of the optical information recording medium in the example of the present invention and a conventional example, Figure 5 is a graph comparing the sensitivity characteristics of the optical information recording medium in the example of the present invention and the conventional example It is a graph comparing the moisture resistance of the reflective layer used and the reflective layer used in the conventional example. 1...Substrate, 2...Reflection layer, 3, 5...
. . . dielectric layer, 4 . . . recording layer, 6 . . . protective layer, 7 . . . recording/reproduction source. Name of agent: Patent attorney Toshio Nakao and one other person
Mourning Figure 4 Garden, N time (B) Figure 4 θ 246,9/θ Lelini Buff-(77?W)
Claims (5)
る記録薄膜層とテルル(Te)、パラジウム(Pd)お
よび酸素(O)を含む反射層を設けたことを特徴とする
光学的情報記録媒体。(1) An optical information recording medium comprising, on a substrate, at least a recording thin film layer whose state changes upon irradiation with light and a reflective layer containing tellurium (Te), palladium (Pd), and oxygen (O). .
dが5〜40atm%かつ酸素(O)が20〜60at
m%であることを特徴とする特許請求の範囲第1項記載
の光学的情報記録媒体。(2) The composition of the reflective layer is P relative to the sum of Te, O, and Pd.
d is 5 to 40 atm% and oxygen (O) is 20 to 60 atm%
2. The optical information recording medium according to claim 1, wherein the optical information recording medium has a content of m%.
ことを特徴とする特許請求の範囲第1項記載の光学的情
報記録媒体。(3) The optical information recording medium according to claim 1, wherein the thickness of the reflective layer is 20 nm≦t≦70 nm.
この上に誘電体からなる層を設け、さらにこの上に光照
射により状態の変化する記録層を設けたことを特徴とす
る特許請求の範囲第1項記載の光学的情報記録媒体。(4) A reflective layer made of Te, Pd, and O is provided on the substrate,
2. The optical information recording medium according to claim 1, further comprising a dielectric layer provided thereon, and further provided thereon a recording layer whose state changes upon irradiation with light.
この第1の誘電体層上に光照射により状態の変化する記
録層を設け、記録層上に第2の誘電体からなる層を設け
、さらに第2の誘電体層上にTe、Pd、Oからなる反
射層を設けたことを特徴とする特許請求の範囲第1項記
載の光学的情報記録媒体。(5) providing a layer made of a first dielectric on a transparent substrate;
A recording layer whose state changes by light irradiation is provided on the first dielectric layer, a second dielectric layer is provided on the recording layer, and Te, Pd, O, etc. are further provided on the second dielectric layer. 2. The optical information recording medium according to claim 1, further comprising a reflective layer consisting of:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61247747A JPS63102049A (en) | 1986-10-17 | 1986-10-17 | Optical information recording medium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61247747A JPS63102049A (en) | 1986-10-17 | 1986-10-17 | Optical information recording medium |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63102049A true JPS63102049A (en) | 1988-05-06 |
Family
ID=17168065
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61247747A Pending JPS63102049A (en) | 1986-10-17 | 1986-10-17 | Optical information recording medium |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63102049A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0860295A4 (en) * | 1996-09-09 | 1998-12-09 | Matsushita Electric Ind Co Ltd | Optical information recording medium, its manufacturing method, optical information recording/reproducing method and optical information recorder/reproducer |
-
1986
- 1986-10-17 JP JP61247747A patent/JPS63102049A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0860295A4 (en) * | 1996-09-09 | 1998-12-09 | Matsushita Electric Ind Co Ltd | Optical information recording medium, its manufacturing method, optical information recording/reproducing method and optical information recorder/reproducer |
US6229785B1 (en) | 1996-09-09 | 2001-05-08 | Matsushita Electric Industrial Co., Ltd. | Optical information recording medium, its manufacturing method, optical information recording/reproducing method and optical information recorder/reproducer |
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