JPS629639A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS629639A JPS629639A JP60148864A JP14886485A JPS629639A JP S629639 A JPS629639 A JP S629639A JP 60148864 A JP60148864 A JP 60148864A JP 14886485 A JP14886485 A JP 14886485A JP S629639 A JPS629639 A JP S629639A
- Authority
- JP
- Japan
- Prior art keywords
- printed wiring
- sealed
- isolated
- resin
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
め要約のデータは記録されません。
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体装置の製造方法KlfJlし、特に小
型トランジスタ、ダイオード、小屋ICのチップ部品を
信頼度高くかつ安価に提供するものであるO 〔従来の技術〕 従来、この種の半導体チップ部品は、バンチングされた
リードフレームに半導体ペレットを搭載・結線を行った
のち、リード形状の加工を行いチップ形状にするものや
、セラミック部品に半導体ペレットを搭載・結線し樹脂
封止するものがある。
型トランジスタ、ダイオード、小屋ICのチップ部品を
信頼度高くかつ安価に提供するものであるO 〔従来の技術〕 従来、この種の半導体チップ部品は、バンチングされた
リードフレームに半導体ペレットを搭載・結線を行った
のち、リード形状の加工を行いチップ形状にするものや
、セラミック部品に半導体ペレットを搭載・結線し樹脂
封止するものがある。
従来の製法に基づくものは、前者の例では封止後にリー
ド加工を行うために耐湿性等の面で劣化が見られる外、
形状寸法のバラツキが大きいという欠点があシ、実装工
程でのトラブルの要因となっている。
ド加工を行うために耐湿性等の面で劣化が見られる外、
形状寸法のバラツキが大きいという欠点があシ、実装工
程でのトラブルの要因となっている。
又、後者の例では、材料が高価である事の外に材料基板
の寸法バラツキ、封止寸法バラツキが大きいという欠点
があシ、やはシ実装工程でのトラプぞの要因となってい
る。
の寸法バラツキ、封止寸法バラツキが大きいという欠点
があシ、やはシ実装工程でのトラプぞの要因となってい
る。
本発明は、あらかじめ素子構造に合致したパターンニン
グを施したプリント配線基板に半導体ペレットを搭載し
、必要な内部結線を行い、その後素子面を樹脂で封止し
、しかる後封止済プリント配線基板を切断分離し、個々
の半導体素子に分離するものである。この時、素子の電
気特性の測定やマーキング等の工程は切断・分離の前後
いずれでもよく、素子構造やプロセスの最適化により最
もやシやすい工程で行えはよい。
グを施したプリント配線基板に半導体ペレットを搭載し
、必要な内部結線を行い、その後素子面を樹脂で封止し
、しかる後封止済プリント配線基板を切断分離し、個々
の半導体素子に分離するものである。この時、素子の電
気特性の測定やマーキング等の工程は切断・分離の前後
いずれでもよく、素子構造やプロセスの最適化により最
もやシやすい工程で行えはよい。
次に1本発明について図面を参照して説明する。
第1図は完成した装置の側面及び断面を表わしている。
第2図(5)は本装置の組立に用いるプリント配線基板
の側断面図、同図(均はこのプリント配線基板の平面部
分図である。以降図面に従い組立工程を説明する。
の側断面図、同図(均はこのプリント配線基板の平面部
分図である。以降図面に従い組立工程を説明する。
プリント配線基板1に半導体ペレット3をソルダー2で
取シつけ固定し、ボンディングワイヤー4で結線する。
取シつけ固定し、ボンディングワイヤー4で結線する。
この様子を第3図に示す。次に、素子面を樹脂5で封止
する。封止は全面でも部分的に行ってもよい。第4図に
これを示す。最後に素子を切断分離し完成品となる。こ
の様子を第5図に示す。切断はスルーホールの中央部を
正確に行う事により、裏面の実装用コンタクトとの連結
を損うことなく分離出来る。
する。封止は全面でも部分的に行ってもよい。第4図に
これを示す。最後に素子を切断分離し完成品となる。こ
の様子を第5図に示す。切断はスルーホールの中央部を
正確に行う事により、裏面の実装用コンタクトとの連結
を損うことなく分離出来る。
以上説明した様に、本発明によれば加工精度が高く品質
のよい、小型リードレスチップキャリア素子が得られる
。外形は従来のリード加工によるチップキャリアに比較
し30〜50チ小型化する事ができ、今後の小型化志向
にも十分対応できる。
のよい、小型リードレスチップキャリア素子が得られる
。外形は従来のリード加工によるチップキャリアに比較
し30〜50チ小型化する事ができ、今後の小型化志向
にも十分対応できる。
素子は小型のダイオードやトランジスタから、大形のL
TI素子まで広く適用出来、その効果は測シ知れない。
TI素子まで広く適用出来、その効果は測シ知れない。
第1図は本発明の一実施例による半導体装置の部分断面
を示した側面図である。 第2図(〜および第2回出)はそれぞれプリント配線基
板の断面および平面図である。 第3図はプリント配線基板に半導体ペレットを搭載し外
部端子と結線した様子を表わしている側面図である。 第4図は半導体素子面を保護用樹脂で封止した様子を表
わす断面図である。 第5図は樹脂封止後の基板を切断分離し、個々の装置と
して完成した様子を示している断面図である。 1・・・・・・プリント配線基板、2・・・・・・マウ
ントソルダー、3・・・・・・半導体ペレット、4・・
・・・・ボンディングワイヤー、5・・−・・・封止樹
脂。 代理人 弁理士 内 原 晋、。 \1.−
を示した側面図である。 第2図(〜および第2回出)はそれぞれプリント配線基
板の断面および平面図である。 第3図はプリント配線基板に半導体ペレットを搭載し外
部端子と結線した様子を表わしている側面図である。 第4図は半導体素子面を保護用樹脂で封止した様子を表
わす断面図である。 第5図は樹脂封止後の基板を切断分離し、個々の装置と
して完成した様子を示している断面図である。 1・・・・・・プリント配線基板、2・・・・・・マウ
ントソルダー、3・・・・・・半導体ペレット、4・・
・・・・ボンディングワイヤー、5・・−・・・封止樹
脂。 代理人 弁理士 内 原 晋、。 \1.−
Claims (1)
- パターンニングされた配線を有するプリント配線基板に
半導体チップを搭載し、該半導体チップの電極と前記配
線との結線を行い、樹脂封止後これを切断分離すること
を特徴とする半導体装置の製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60148864A JPS629639A (ja) | 1985-07-05 | 1985-07-05 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60148864A JPS629639A (ja) | 1985-07-05 | 1985-07-05 | 半導体装置の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS629639A true JPS629639A (ja) | 1987-01-17 |
Family
ID=15462441
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60148864A Pending JPS629639A (ja) | 1985-07-05 | 1985-07-05 | 半導体装置の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS629639A (ja) |
Cited By (59)
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US5950074A (en) * | 1997-04-18 | 1999-09-07 | Amkor Technology, Inc. | Method of making an integrated circuit package |
US5962810A (en) * | 1997-09-09 | 1999-10-05 | Amkor Technology, Inc. | Integrated circuit package employing a transparent encapsulant |
US5981314A (en) * | 1996-10-31 | 1999-11-09 | Amkor Technology, Inc. | Near chip size integrated circuit package |
US6117705A (en) * | 1997-04-18 | 2000-09-12 | Amkor Technology, Inc. | Method of making integrated circuit package having adhesive bead supporting planar lid above planar substrate |
US6150193A (en) * | 1996-10-31 | 2000-11-21 | Amkor Technology, Inc. | RF shielded device |
US6281568B1 (en) | 1998-10-21 | 2001-08-28 | Amkor Technology, Inc. | Plastic integrated circuit device package and leadframe having partially undercut leads and die pad |
US6433277B1 (en) | 1998-06-24 | 2002-08-13 | Amkor Technology, Inc. | Plastic integrated circuit package and method and leadframe for making the package |
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US6448635B1 (en) | 1999-08-30 | 2002-09-10 | Amkor Technology, Inc. | Surface acoustical wave flip chip |
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1985
- 1985-07-05 JP JP60148864A patent/JPS629639A/ja active Pending
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