JPS62188326A - Removing method of resin from resin-sealed semiconductor device - Google Patents
Removing method of resin from resin-sealed semiconductor deviceInfo
- Publication number
- JPS62188326A JPS62188326A JP2908386A JP2908386A JPS62188326A JP S62188326 A JPS62188326 A JP S62188326A JP 2908386 A JP2908386 A JP 2908386A JP 2908386 A JP2908386 A JP 2908386A JP S62188326 A JPS62188326 A JP S62188326A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- semiconductor device
- resistant
- external leads
- external
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011347 resin Substances 0.000 title claims abstract description 47
- 229920005989 resin Polymers 0.000 title claims abstract description 47
- 239000004065 semiconductor Substances 0.000 title claims abstract description 29
- 238000000034 method Methods 0.000 title claims description 10
- 238000007789 sealing Methods 0.000 claims abstract description 31
- 239000004020 conductor Substances 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000000126 substance Substances 0.000 claims abstract description 7
- 238000002844 melting Methods 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- 238000004806 packaging method and process Methods 0.000 claims 1
- 239000000919 ceramic Substances 0.000 abstract description 10
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract description 8
- 229910000679 solder Inorganic materials 0.000 abstract description 6
- 238000005259 measurement Methods 0.000 abstract description 2
- 238000004380 ashing Methods 0.000 description 5
- 230000005856 abnormality Effects 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 238000007664 blowing Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
Landscapes
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、樹脂封止型半導体装置の樹脂開封方法に関す
る。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method for unsealing a resin-sealed semiconductor device.
（従来の技術）
半導体装置の破壊試験、異常発生の原因の追及、解析等
を行なうに際し、封止樹脂を除去して開封する必要が生
じる。従来の樹脂開封方法を、ＩＣを例として、２例説
明する。(Prior Art) When performing a destructive test on a semiconductor device, investigating the cause of abnormality occurrence, analyzing the device, etc., it becomes necessary to remove the sealing resin and open the device. Two conventional resin unsealing methods will be explained using an IC as an example.
第４図は、樹脂溶解によるウェット開封例を示したもの
であり、第４図（ａ）は斜視図、第４図（ｂ）は断面図
である。まず、樹脂封止型半導体装置の封止樹脂１にお
けるチップ２の上部に相当する部分に凹部を形成する。FIG. 4 shows an example of wet opening by resin melting, with FIG. 4(a) being a perspective view and FIG. 4(b) being a sectional view. First, a recess is formed in a portion of the sealing resin 1 of a resin-sealed semiconductor device that corresponds to the upper part of the chip 2.
この時、ワイヤー３に損傷を与えないようにする。この
四部に発煙硝酸を入れると、チップ２周辺の封止樹脂が
溶解される。At this time, be careful not to damage the wire 3. When fuming nitric acid is poured into these four parts, the sealing resin around the chip 2 is dissolved.
このような部分開封によって、チップ２の表面、ワイヤ
ー３、ワイヤーボンド付近のり−ド４の表面が露出する
。This partial opening exposes the surface of the chip 2, the wire 3, and the surface of the glue 4 near the wire bond.
第５図は、アッシングによるドライ開封例を示したもの
で、樹脂封止型半導体装置をアッシング・装置にかける
と、封止樹脂１の表面がアッシングされる。そこで、高
圧エアーでブローして、表面のアッシングされた樹脂を
除去し、新たに現われた樹脂表面を再びアッシング装置
にかける。このアッシングとブローを繰り返すことによ
り、封止樹脂１を除去することができる。ブローをチッ
プ２の表面側だけ行なえば、反対側は、アッシングが進
行しにくいため、第５図に示すように、チップ２の表面
側の封止樹脂のみを除去できる。FIG. 5 shows an example of dry unsealing by ashing. When a resin-sealed semiconductor device is subjected to an ashing device, the surface of the sealing resin 1 is ashed. Therefore, the ashed resin on the surface is removed by blowing with high-pressure air, and the newly appeared resin surface is applied to the ashing device again. By repeating this ashing and blowing, the sealing resin 1 can be removed. If blowing is performed only on the front side of the chip 2, ashing is difficult to proceed on the opposite side, so that only the sealing resin on the front side of the chip 2 can be removed, as shown in FIG.
（発明が解決しようとする問題点）
しかしながら、第４図に示したウェット開封例の場合は
、封止樹脂１の凹部内での溶解のため、激しい化学反応
の衝撃によりワイヤー３が外れる場合がある。そのよう
な場合、ワイヤー３が初めから接続されていなかったか
どうかの判断ができない。また、ワイヤー３の外れによ
り、リード４からの信号入力による電気特性の測定が不
可能となる。さらに、ＥＢ（電子ビーム）テスターを用
いた測定においては、チップ２やワイヤー３の周辺が絶
縁物の封止樹脂で囲まれているため、電子ビームの照射
が安定せず、電気特性の測定ができない。(Problem to be Solved by the Invention) However, in the case of the wet opening example shown in FIG. 4, the wire 3 may come off due to the impact of a violent chemical reaction due to the melting of the sealing resin 1 within the recess. be. In such a case, it is impossible to determine whether the wire 3 was not connected from the beginning. Further, due to the disconnection of the wire 3, it becomes impossible to measure the electrical characteristics by inputting a signal from the lead 4. Furthermore, in measurements using an EB (electron beam) tester, the periphery of the chip 2 and wire 3 is surrounded by an insulating sealing resin, making the electron beam irradiation unstable and making it difficult to measure electrical characteristics. Can not.
一方、第５図で示したドライ開封例の場合、リード４の
表面が露出するまでの開封が可能であり、電子ビーム照
射は安定となるが、開封時の高圧ブローによりワイヤー
３が外れてしまい、リード４からの信号入力による電気
特性測定が不可能となる。On the other hand, in the case of the dry opening example shown in Fig. 5, it is possible to open the package until the surface of the lead 4 is exposed, and the electron beam irradiation is stable, but the wire 3 may come off due to the high-pressure blow when the package is opened. , it becomes impossible to measure electrical characteristics by inputting a signal from the lead 4.
以上述べたように、従来の開封方法では、チップ２の表
面の観察は可能であるが、観察と同時にいかなる電気特
性の測定も行なえるという開封状態を得ることが困難で
ある。しかし、例えば異常が発生した樹脂封止型半導体
装置の異常部の確認、異常発生原因を追求するに当って
は、封止中と同 ゛じ状態を保ったままでの樹脂開封
、即ち、観察と電気特性の測定を並行して行なえるよう
な樹脂開封が必要なのである。As described above, with the conventional unsealing method, it is possible to observe the surface of the chip 2, but it is difficult to obtain an unsealed state in which any electrical characteristics can be measured at the same time as the observation. However, for example, when confirming the abnormal part of a resin-sealed semiconductor device in which an abnormality has occurred or investigating the cause of the abnormality, it is necessary to open the resin seal while maintaining the same state as during sealing, that is, to conduct observation. It is necessary to open the resin seal so that the electrical characteristics can be measured in parallel.
そこで本発明は、封止中と同じチップ状態を保ったまま
、所要部分の樹脂を溶解、除去する方法を提供するもの
である。Accordingly, the present invention provides a method for dissolving and removing resin from required portions while maintaining the same chip state as during sealing.
（問題点を解決するための手段）
上記問題点を解決するために、本発明は、側面に複数の
外部リードを備えた開封しようとする樹脂封止型半導体
装置に近似した外形寸法を有し、かつその側面に、前記
外部リードに対応する間隔で一部が埋め込まれた複数の
導体を有する耐熱性、耐薬品性の絶縁性基板上に前記半
導体装置を積み重ねて、対応する前記各外部リードと各
導体とをそれぞれ接合する工程と、その後、前記半導体
装置の封止樹脂を溶解除去する工程とを含むものである
。(Means for Solving the Problems) In order to solve the above problems, the present invention has external dimensions similar to a resin-sealed semiconductor device to be opened, which has a plurality of external leads on the side surface. , and the semiconductor devices are stacked on a heat-resistant and chemical-resistant insulating substrate having a plurality of conductors partially embedded in the sides thereof at intervals corresponding to the external leads, and each of the corresponding external leads and each conductor, and thereafter, a step of dissolving and removing the sealing resin of the semiconductor device.
（作 用）
本発明は、前記の方法により、樹脂封止型半導体装置の
少なくともダイパッド面より上部の封止樹脂を、封止時
のチップ状態を変えることなく除去することができる。(Function) According to the present invention, the sealing resin at least above the die pad surface of a resin-sealed semiconductor device can be removed without changing the state of the chip at the time of sealing, using the method described above.
（実施例）
次に本発明の実施例を第１図〜第３図に従って説明する
。まず、第１図に示すように、側面に６個の外部リード
４を有する樹脂封止型半導体装置を、この半導体装置に
近似した外形寸法を有し、かつその側面に、外部リード
４に対応する間隔で一部を埋め込んだ６個の導体５を有
する耐熱性、耐薬品性のセラミック基板６上に積み重ね
、各外部リード４とそれに対応する各導体５とをそれぞ
れ半田７で接合する。次に、半導体装置の封止樹脂１を
発煙硝酸内に浸漬して溶解除去する。封止樹脂の除去方
法としては、第２図に示すように、チップ２を搭載して
いるダイパッド８の面より上部の封止樹脂を除去する方
法と、第３図に示すように封止樹脂を全部除去する方法
とがある。(Example) Next, an example of the present invention will be described with reference to FIGS. 1 to 3. First, as shown in FIG. 1, a resin-sealed semiconductor device having six external leads 4 on its side surface has external dimensions similar to that of this semiconductor device, and has a side surface corresponding to the external leads 4. The external leads 4 are stacked on a heat-resistant and chemical-resistant ceramic substrate 6 having six conductors 5 partially embedded at intervals of 1, and each external lead 4 and each corresponding conductor 5 are bonded with solder 7. Next, the sealing resin 1 of the semiconductor device is immersed in fuming nitric acid to dissolve and remove it. There are two ways to remove the sealing resin: as shown in FIG. 2, the sealing resin above the surface of the die pad 8 on which the chip 2 is mounted is removed, and as shown in FIG. There is a way to remove all of them.
まず、第３図の封止樹脂全部を溶解する場合は。First, when all the sealing resin shown in FIG. 3 is to be melted.
第１図のように、外部リード４と導体５とを半田７で接
合した状態で、加温した発煙硝酸中に全体を浸漬すると
、半導体装置の方は、封止樹脂１が溶解してチップ２、
ワイヤー３、外部リード４のみが残る。セラミックは加
温した発煙硝酸に不溶であり、又半田７も溶解しにくい
ため、セラミック基板６の導体５に固定された外部リー
ド４はバラバラにならず、ワイヤー３で、チップ２と接
続された封止中と同じ状態で開封される。ダイパッド８
が外部リード４につながっていない半導体装置の場合に
、第３図に示すように封止樹脂１を全て溶解してしまう
と、チップ２がワイヤー３のみにつながって保持される
形になるため、機械的に弱く、チップ２が脱落し易い。As shown in FIG. 1, when the external lead 4 and the conductor 5 are joined with the solder 7 and the whole is immersed in heated fuming nitric acid, the sealing resin 1 of the semiconductor device melts and the chip 2,
Only the wire 3 and external lead 4 remain. Ceramic is insoluble in heated fuming nitric acid, and the solder 7 is also difficult to dissolve, so the external leads 4 fixed to the conductors 5 of the ceramic substrate 6 do not fall apart and are connected to the chip 2 with the wires 3. It is opened in the same state as it was sealed. Die pad 8
In the case of a semiconductor device in which the wires are not connected to the external leads 4, if the sealing resin 1 is completely melted as shown in FIG. 3, the chip 2 will be held connected only to the wires 3. It is mechanically weak and the chip 2 easily falls off.
そこで、第２図の場合は、ダイパッド８の面より上部の
封止樹脂１のみを除去するものである。この場合、封止
樹脂１の表面を下にして、その表面部分のみを加温した
発煙硝酸の液に浸漬する。発煙硝酸の温度を約５０℃に
すると、封止樹脂１は徐々に溶解されるため、ダイパッ
ド８の面より上部の封止樹脂のみを除去することができ
る。リード４はダイパッド８の面と同位置かそれより上
部にあるため、この時、外部リード４の表面は露出して
いる。Therefore, in the case of FIG. 2, only the sealing resin 1 above the surface of the die pad 8 is removed. In this case, the surface of the sealing resin 1 is turned down, and only the surface portion thereof is immersed in a heated fuming nitric acid solution. When the temperature of the fuming nitric acid is set to about 50° C., the sealing resin 1 is gradually dissolved, so that only the sealing resin above the surface of the die pad 8 can be removed. Since the leads 4 are located at the same position as or above the surface of the die pad 8, the surfaces of the external leads 4 are exposed at this time.
（発明の効果）
以上述べたように、本発明方法によれば、樹脂封止型半
導体装置の外部リードを耐熱性、耐薬品性の絶縁性基板
に設けた導体に接合、固定することにより樹脂溶解後も
、外部リードがバラバラにならず、チップ、ワイヤー、
外部リードの位置関係、接合関係を樹脂封止中の状態そ
のままに維持することができる。また、封止樹脂表面か
ら徐々に樹脂溶解すれば、ダイパッド又はリード面より
下の樹脂を残すことができ、チップが樹脂の上に固定さ
れた状態を保てるので、チップの脱落を防ぐことができ
る。さらに、樹脂を徐々に溶解するため、反応の衝撃で
ワイヤーが外れるどうこともない。(Effects of the Invention) As described above, according to the method of the present invention, the external leads of a resin-sealed semiconductor device are bonded and fixed to a conductor provided on a heat-resistant and chemical-resistant insulating substrate, and thereby Even after melting, the external leads do not fall apart, and the chips, wires,
The positional relationship and bonding relationship of the external leads can be maintained as they were during resin sealing. In addition, if the resin is gradually dissolved from the surface of the sealing resin, the resin below the die pad or lead surface can be left behind, and the chip can be kept fixed on the resin, preventing the chip from falling off. . Furthermore, since the resin is gradually dissolved, there is no chance of the wire coming off due to the impact of the reaction.
実施例で示したように、半導体装置と同じタイプのセラ
ミックパッケージを用いれば、そのまま、ソケットに差
し込んで電気特性を測定することもできる。As shown in the example, if a ceramic package of the same type as the semiconductor device is used, the electrical characteristics can be measured by directly inserting it into a socket.
このように、封止中の状態を変化させることなく、樹脂
開封ができるということは、観察と並行していかなる電
気特性の測定も可能となり、半導体装置の検査、異常発
生原因の追求、解析等に非常に役立つものである。In this way, the ability to open the resin seal without changing the sealed state makes it possible to measure any electrical characteristics in parallel with observation, making it possible to inspect semiconductor devices, find the cause of abnormalities, analyze them, etc. It is very useful.
第１図は、本発明の一実施例のセラミック基板上に半導
体装置を積み重ね、外部リードと導体とを接合した状態
を示す図、第２図及び第３図は、それぞれ本発明による
樹脂開封例を示す断面図、第４図及び第５図は、それぞ
れ従来の樹脂開封例を示す断面図である。
１ ・・・封止樹脂、 ２・・・チップ。
３ ・・・ワイヤー、 ４ ・・・外部リード、５・・
・セラミック基板に設けた導体。
６・・・セラミック基板、 ７・・・半田、８ ・・・
ダイパッド。
特許出願人 松下電子工業株式会社
第１図
１ ｌと朽（脂
２ ヶヅデ
第２図
第３図
第４図
第５図
「−６−ユ・FIG. 1 is a diagram showing a state in which semiconductor devices are stacked on a ceramic substrate according to an embodiment of the present invention and external leads and conductors are bonded, and FIGS. 2 and 3 are examples of resin unsealing according to the present invention. FIGS. 4 and 5 are cross-sectional views showing examples of conventional resin seals, respectively. 1... Sealing resin, 2... Chip. 3...Wire, 4...External lead, 5...
・Conductor provided on a ceramic substrate. 6...Ceramic board, 7...Solder, 8...
die pad. Patent applicant: Matsushita Electronics Co., Ltd.
Claims (2)
体装置を、前記半導体装置に近似した外形寸法を有しか
つその側面に前記外部リードに対応する間隔で一部を埋
め込んだ複数の導体を有する耐熱性、耐薬品性の絶縁性
基板上に重ねて載置し、前記各外部リードとこれに対応
する前記各導体とをそれぞれ接合する工程と、前記半導
体装置の封止樹脂を溶解除去する工程とを含むことを特
徴とする樹脂封止型半導体装置の樹脂開封方法。(1) A resin-sealed semiconductor device having a plurality of external leads on its side surface has external dimensions similar to the semiconductor device, and a plurality of conductors partially embedded in its side surface at intervals corresponding to the external leads. A step of stacking the semiconductor device on a heat-resistant, chemical-resistant insulating substrate having a heat-resistant, chemical-resistant insulating substrate, and bonding each of the external leads and the corresponding conductors, and dissolving and removing the sealing resin of the semiconductor device. 1. A method for unsealing a resin-sealed semiconductor device, the method comprising:
を搭載しているダイパッド面より上部の封止樹脂を溶解
除去することを特徴とする特許請求の範囲第（１）項記
載の樹脂封止型半導体装置の樹脂開封方法。(2) Resin sealing according to claim (1), characterized in that in the step of melting the sealing resin, at least the sealing resin above the die pad surface on which the semiconductor chip is mounted is dissolved and removed. Method for opening resin packaging of type semiconductor devices.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2908386A JPS62188326A (en) | 1986-02-14 | 1986-02-14 | Removing method of resin from resin-sealed semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2908386A JPS62188326A (en) | 1986-02-14 | 1986-02-14 | Removing method of resin from resin-sealed semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62188326A true JPS62188326A (en) | 1987-08-17 |
Family
ID=12266450
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2908386A Pending JPS62188326A (en) | 1986-02-14 | 1986-02-14 | Removing method of resin from resin-sealed semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62188326A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6231717B1 (en) | 1998-05-26 | 2001-05-15 | Nippon Scientific Co., Ltd. | Plastic molding unsealing apparatus |
-
1986
- 1986-02-14 JP JP2908386A patent/JPS62188326A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6231717B1 (en) | 1998-05-26 | 2001-05-15 | Nippon Scientific Co., Ltd. | Plastic molding unsealing apparatus |
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