JPS62118470U - - Google Patents
Info
- Publication number
- JPS62118470U JPS62118470U JP600586U JP600586U JPS62118470U JP S62118470 U JPS62118470 U JP S62118470U JP 600586 U JP600586 U JP 600586U JP 600586 U JP600586 U JP 600586U JP S62118470 U JPS62118470 U JP S62118470U
- Authority
- JP
- Japan
- Prior art keywords
- end faces
- coated
- reflection film
- resonator end
- oscillation region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000010355 oscillation Effects 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims 2
- 238000010586 diagram Methods 0.000 description 3
Description
第１図ａ，ｂは本考案の実施例を示す正面図及
び断面図、第２図は寿命特性を示す特性図、第３
図は従来例を示す模式図である。
７，８…第１、第２共振器端面、９…低反射膜
、１３…レーザ光発振領域。
Figures 1a and b are a front view and a sectional view showing an embodiment of the present invention, Figure 2 is a characteristic diagram showing life characteristics, and Figure 3 is a characteristic diagram showing life characteristics.
The figure is a schematic diagram showing a conventional example. 7, 8...First and second resonator end faces, 9...Low reflection film, 13...Laser beam oscillation region.
Claims (1)
て、上記一方の共振器端面のレーザ光発振領域を
高反射膜で被覆し、レーザ光非発振領域を低反射
膜で被覆したことを特徴とする高出力型半導体レ
ーザ。 A high output semiconductor laser having a pair of resonator end faces, characterized in that the laser beam oscillation region of one of the resonator end faces is coated with a high reflection film, and the laser light non-oscillation region is coated with a low reflection film. type semiconductor laser.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP600586U JPS62118470U (en) | 1986-01-20 | 1986-01-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP600586U JPS62118470U (en) | 1986-01-20 | 1986-01-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62118470U true JPS62118470U (en) | 1987-07-28 |
Family
ID=30788111
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP600586U Pending JPS62118470U (en) | 1986-01-20 | 1986-01-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62118470U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01318270A (en) * | 1988-06-17 | 1989-12-22 | Sanyo Electric Co Ltd | Semiconductor laser |
| JPH0229551U (en) * | 1988-08-17 | 1990-02-26 |
-
1986
- 1986-01-20 JP JP600586U patent/JPS62118470U/ja active Pending
Non-Patent Citations (1)
| Title |
|---|
| XEROX DISCLOSURE JOURNAL=1982 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01318270A (en) * | 1988-06-17 | 1989-12-22 | Sanyo Electric Co Ltd | Semiconductor laser |
| JPH0229551U (en) * | 1988-08-17 | 1990-02-26 |