JPS6190432A - Flap support mechanism - Google Patents
Flap support mechanismInfo
- Publication number
- JPS6190432A JPS6190432A JP59211288A JP21128884A JPS6190432A JP S6190432 A JPS6190432 A JP S6190432A JP 59211288 A JP59211288 A JP 59211288A JP 21128884 A JP21128884 A JP 21128884A JP S6190432 A JPS6190432 A JP S6190432A
- Authority
- JP
- Japan
- Prior art keywords
- mask
- displacement
- springs
- axis
- rigidity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006073 displacement reaction Methods 0.000 claims abstract description 32
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 abstract description 13
- 238000005452 bending Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract 1
- 230000007423 decrease Effects 0.000 description 2
- 241000257465 Echinoidea Species 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
この発明はX線露光装置のマスクステージ等に用いるあ
おり支持機構に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a tilt support mechanism used in a mask stage of an X-ray exposure apparatus.
X線露光装置においては、マスクとウェハとを近接して
5置し、X線をマスクに照射して、マスクパタンをウェ
ハ表面に塗布したレジスト上に転写する。この場合、ウ
ェハに対してマスクが平行に置かれていないと、転写さ
れるパタンにひずみが生ずる。このため、マスクを支持
するマスクステージにはあおり支接機構か設けられてい
る。In an X-ray exposure apparatus, a mask and a wafer are placed close to each other, and the mask is irradiated with X-rays to transfer the mask pattern onto a resist coated on the wafer surface. In this case, if the mask is not placed parallel to the wafer, distortion will occur in the transferred pattern. For this reason, a tilt support mechanism is provided on the mask stage that supports the mask.
第6図は従来のあおり支持機構を有するX線露光装置の
マスクステージを示す平面図、第7図は同じく正断面図
である。図において、14はマスクステージ支持枠、1
3はマスクホルダ取付枠、15は中空の円板バネで、円
板バネ15の外周、内周はそれぞれマスクステージ支持
枠14、マスクホルダ取付枠13に取付けられている。FIG. 6 is a plan view showing a mask stage of an X-ray exposure apparatus having a conventional tilt support mechanism, and FIG. 7 is a front sectional view thereof. In the figure, 14 is a mask stage support frame, 1
3 is a mask holder attachment frame; 15 is a hollow disk spring; the outer and inner peripheries of the disk spring 15 are attached to the mask stage support frame 14 and the mask holder attachment frame 13, respectively.
2はマスクホルダ取付枠13に取付けられているマスク
ホルダ、1はマスクホルダ2に吸着されたマスク、4は
ウエノ)ホルダ、3はウェハホルダ4に吸着されたウェ
ノ1.20はマスクステージ支持枠14に固定されたブ
ラケット、5〜8はブラケット20に取付けられた電磁
石で、電磁石5〜8はマスク1の中心点を通りかつ直角
なX軸、Y軸上に設けられており、電磁石5〜8の中に
は永久磁石が組込まれていて、正の電流を流すと増磁し
、負の電流を流すと減磁する。2 is a mask holder attached to the mask holder attachment frame 13, 1 is a mask sucked to the mask holder 2, 4 is a wafer holder, 3 is a weno holder 1.20 is a mask suctioned to the wafer holder 4, and 20 is a mask stage support frame 14. Electromagnets 5 to 8 are attached to the bracket 20, and electromagnets 5 to 8 are provided on the X and Y axes that pass through the center point of the mask 1 and are perpendicular to each other. A permanent magnet is built into it, and it becomes magnetized when a positive current is passed through it, and demagnetized when a negative current is passed through it.
9〜12はマスクホルダ取付枠13に取付けられたアマ
チャで、アマチャ9〜12はそれぞれ電磁石5〜8に対
向する位置に設けられている。Armatures 9 to 12 are attached to the mask holder attachment frame 13, and the armatures 9 to 12 are provided at positions facing the electromagnets 5 to 8, respectively.
このあおり支持機構においては、電磁石5に正の電流を
流し、電磁石7に負の電流を流すと、電磁石5とアマチ
ャ9との間の隙間が減少し、電磁石7とアマチャ11と
の間の隙間が増大するので、マスクlを第7図矢印Fの
方向すなわちY軸回りにあおることができる。また、電
磁石5に負の電流を流し、電磁石7に正の電流を流すと
、マスクIを矢印Fと反対方向にあおると七ができる。In this tilting support mechanism, when a positive current is passed through the electromagnet 5 and a negative current is passed through the electromagnet 7, the gap between the electromagnet 5 and the armature 9 decreases, and the gap between the electromagnet 7 and the armature 11 decreases. increases, so that the mask l can be moved in the direction of arrow F in FIG. 7, that is, around the Y axis. Further, when a negative current is applied to the electromagnet 5 and a positive current is applied to the electromagnet 7, the mask I is rotated in the opposite direction to the arrow F to form a pattern 7.
さらに、電磁石6.8に電流を流すと、マスクlをX軸
回りにあおることができる。また、全電磁石5〜8に同
じ大きさの電流を流すことによって、X軸、Y軸と直゛
角なX軸方向の変位を与えることができる。したがって
、マスク1をウニ”3に対□ して平行にすることが
でき、かつマスク1とウェハ3との距離を所定の値にす
ることができる。Furthermore, by passing a current through the electromagnet 6.8, the mask l can be moved around the X-axis. Further, by passing current of the same magnitude through all the electromagnets 5 to 8, displacement in the X-axis direction perpendicular to the X-axis and the Y-axis can be applied. Therefore, the mask 1 can be made parallel to the sea urchin 3, and the distance between the mask 1 and the wafer 3 can be set to a predetermined value.
ところで、マスク1にあおり変位、X軸方向変位を与え
た場合には、円板バネ15が変形するが、円板バネ15
は平面状であり、かつ外周、内周がマスクステージ支持
枠14、マスクホルダ取付枠】3に取付けられているた
め、マスクlにあおり変位を与えたときには、円板バネ
15が複雑に変形して、X軸、Y軸、X軸方向にも干渉
変位が生じてしまい、とくにX軸方向の干渉変位が大き
く、中心から27姻の点におけるあおり変位に対するX
軸方向の干渉変位の割合つまりX軸方向の軸間干渉が1
00%以上となる。このため、マスクlとウェハ3とを
平行にし、かつマスクlとウェハ3との距離を所定値に
する作業すなわちマスク1とウェハ3との位置決め作業
に多くの時間を要する。また、円板バネ15はあおり変
位に対する剛性が大きいため、マスクlに大きなあおり
変位を与えることができない。そして、マスク1に大き
なあおり変位を与えるために、円板バネ15にスリット
を設けることが考えられるが、この場合にはスリットの
加工精度が低いと、スリットの形状にバラツキが生じて
、あおり変位に対する円板バネ15の剛性があおり方向
によって変化するから、マスク1に任意の方向のあおり
変位を与えることが困難になる。By the way, when the mask 1 is given a tilting displacement or a displacement in the X-axis direction, the disc spring 15 is deformed;
is flat, and the outer and inner peripheries are attached to the mask stage support frame 14 and the mask holder mounting frame 3, so when the mask l is subjected to tilting displacement, the disc spring 15 deforms in a complicated manner. Therefore, interference displacement also occurs in the X-axis, Y-axis, and X-axis directions, and the interference displacement in the X-axis direction is particularly large.
The ratio of interference displacement in the axial direction, that is, the interference between the axes in the X-axis direction is 1
00% or more. Therefore, it takes a lot of time to make the mask 1 and wafer 3 parallel and to set the distance between the mask 1 and the wafer 3 to a predetermined value, that is, to position the mask 1 and the wafer 3. Further, since the disk spring 15 has a large rigidity against tilting displacement, it is not possible to apply a large tilting displacement to the mask l. In order to give a large tilting displacement to the mask 1, it is conceivable to provide a slit in the disc spring 15, but in this case, if the machining accuracy of the slit is low, variations in the shape of the slit will occur, causing the tilting displacement. Since the rigidity of the disc spring 15 relative to the mask 1 changes depending on the tilting direction, it becomes difficult to apply tilting displacement to the mask 1 in any direction.
この発明は上述の間層点を解決するためになされたもの
で、位置決め作業を短時間に行なうことができ、大きな
あおり変位を与えることができ、かつ任意の方向のあお
り変位を容易に与えることができるあおり支持機構を提
供することを目的とする。This invention was made in order to solve the above-mentioned interlayer point, and it is possible to perform positioning work in a short time, to give a large tilting displacement, and to easily give a tilting displacement in any direction. The purpose of the present invention is to provide a tilting support mechanism that allows for
[発明の概要〕
この目的を達成するため、この発明においては、第1部
材と第2部材とがバネで連結され、上記第1部材と上記
第2部材とのあおり変位を非接触で変化させるあおり手
段が設けられたあおり支持機構において、上記バネとし
て柱状でかつ柱軸と直角な切れ目を設けた複数の交差指
バネを用いる。[Summary of the Invention] In order to achieve this object, in the present invention, a first member and a second member are connected by a spring, and the tilting displacement between the first member and the second member is changed without contact. In the tilting support mechanism provided with tilting means, a plurality of interdigital springs are used as the springs, each having a columnar shape and having cuts perpendicular to the columnar axis.
第1図はこの発明に係るあおり支持機構を有するX線露
光装置のマスクステージを示す平面図、第2図は第1図
のA−0−N断面図である。図において、21はマスク
ステージ支持枠14に固定されたブラケット、16〜1
9はブラケット21とマスクホルダ取付枠13とを連結
した交差指バネで、交差指バネ16〜】9はX軸、Y軸
に対して45°の方向に設けられており、交差指バネ1
6〜19は柱状でかつ柱軸と直角な切れ目が設けられて
いる。FIG. 1 is a plan view showing a mask stage of an X-ray exposure apparatus having a tilt support mechanism according to the present invention, and FIG. 2 is a sectional view taken along line A0-N in FIG. In the figure, 21 is a bracket fixed to the mask stage support frame 14;
9 is an interdigital spring connecting the bracket 21 and the mask holder mounting frame 13;
6 to 19 are columnar and have cuts perpendicular to the column axis.
このあおり支持似構においては、マスクステージ支持枠
14とマスクホルダ取付枠13とを交差指バネ16〜1
9で連結しているから、軸間干渉が非常に小さい。すな
わち、第3図はあおり変位を与えるためにたとえば電磁
石5.7に流す電流と中心がら27調の点におけるあお
り変位、X軸方向変位との間係を示すグラフであるが、
このグラフがら明らかなよう・lζ、X軸方向の軸間干
渉は最大で約14チと極めて小さい。また、交差指バネ
16〜19の曲げ剛性9回転剛性は非常に大きいので、
X軸方向。In this tilt support structure, the mask stage support frame 14 and the mask holder attachment frame 13 are connected by interdigital springs 16 to 1.
Since they are connected by 9, interference between axes is extremely small. That is, FIG. 3 is a graph showing the relationship between the current flowing through the electromagnet 5.7, for example, to give a tilt displacement, and the tilt displacement and X-axis direction displacement at a point 27th from the center.
As is clear from this graph, the interference between the axes in the lζ and X-axis directions is extremely small, at a maximum of about 14 inches. In addition, since the bending rigidity and nine-rotation rigidity of the interdigital springs 16 to 19 are very large,
X-axis direction.
Y軸方向の軸間干渉も極めて小さい。さらに、交差指バ
ネ16〜19の柱軸方向の剛性は小さいから、マスク1
に大きなあおり変位を与えることができ。Interaxis interference in the Y-axis direction is also extremely small. Furthermore, since the rigidity of the interdigital springs 16 to 19 in the column axis direction is small, the mask 1
It can give a large tilting displacement.
またあおり変位に対する交差指バネ16〜19の剛性が
あおり方向にかかわらず一定であるから、マースフlに
任意の方向のあおり変位を容易に与えることができる。In addition, since the rigidity of the interdigital springs 16 to 19 with respect to tilting displacement is constant regardless of the tilting direction, tilting displacement in any direction can be easily applied to Mars-Fl.
さらに、交差指バネ16〜19は円板バネ15と比較し
て占有面積が小さいので、機構を小さくかつコンパクト
にまとめることができる。Further, since the interdigital springs 16 to 19 occupy a smaller area than the disc spring 15, the mechanism can be made smaller and more compact.
第4図+a+は交差指バネを示す正面図、第4図+b)
は同じく右側面図、第4図fclは第4図(a)のB−
B断面図、第4図td)は第4図+a+のC−C断面図
である。図において、22は円柱状の交差指バネ本体、
23はバネ本体22の中央に設けられた円形孔で、円形
孔23の中心線はバネ本体22の中心線と一致している
。24.25はそれぞれバネ本体22に第4図fat紙
面の右方、左方から設けられた切れ目で、切れ目24.
25はバネ本体22の柱軸と直角に設けられている。Figure 4+a+ is a front view showing the interdigital spring, Figure 4+b)
is the same right side view, and fcl in Fig. 4 is B- in Fig. 4(a).
B sectional view, FIG. 4 td) is a CC sectional view of FIG. 4+a+. In the figure, 22 is a cylindrical interdigital spring body;
23 is a circular hole provided in the center of the spring body 22, and the center line of the circular hole 23 coincides with the center line of the spring body 22. 24 and 25 are cuts provided in the spring body 22 from the right and left sides of the page of FIG. 4, respectively.
25 is provided at right angles to the column axis of the spring body 22.
第5図fatは他の交差指バネを示す正面図、第5図(
blは同じ(右側面図、第5図telは第5図(alの
D−D断面図、第5図(dlは第5図(a)cDE−E
断面図である。図において、26.27はそれぞれバネ
本体22に第5図fat紙面の後方、前方から設けられ
た切れ目で、切れ目26.27はバネ本体22の柱軸と
直角に設けられている。Figure 5 fat is a front view showing another interdigital spring, Figure 5 (
BL is the same (right side view, Figure 5 tel is Figure 5 (al's DD sectional view, Figure 5 (dl is Figure 5 (a) cDE-E
FIG. In the figure, 26 and 27 are cuts provided in the spring body 22 from the rear and front of the page of FIG.
なお、上述実施例においては、X線露光装置のマスクス
テージに用いるあおり支持機構について説明したが、池
のあおり支持機構にもこの発明を適当できることは当然
である。また、上述実施例においては、あおり手段とし
て電磁石5〜8を用いた場合について説明したが、静電
力を利用したものを用いてもよい。さらに、上述実施例
においては、4個の交差指バネ16〜19を設けたが、
2個以上の交差指バネを設ければよい。また、交差指バ
ネとして円形孔を有する円柱状のものを例示したが、角
柱状のもの、孔のないものを用いてもよい。さらに、交
差指バネとして2方向、4方向から切れ目24〜27を
設けたものを例示したが、切れ目を3方向、5方向以上
から設けてもよい。In the above-mentioned embodiment, the tilting support mechanism used for the mask stage of an X-ray exposure apparatus has been described, but it goes without saying that the present invention can also be applied to a tilting support mechanism for a pond. Furthermore, in the above-mentioned embodiment, a case has been described in which the electromagnets 5 to 8 are used as the agitation means, but it is also possible to use electromagnets that utilize electrostatic force. Furthermore, in the above embodiment, four interdigital springs 16 to 19 were provided, but
Two or more interdigital springs may be provided. In addition, although a cylindrical spring having a circular hole is illustrated as an interdigital spring, a prismatic spring or a spring without holes may also be used. Furthermore, although the interdigital springs have been exemplified in which cuts 24 to 27 are provided from two or four directions, cuts may be provided from three directions or from five or more directions.
以上説明したように、この発明に係るあおり支持機構に
おいては、あおり変位を与えた15合の軸間干渉が非常
に小さいので、位置決め作業を短時間に行なうことがで
き、また大きなあおり変位を与えることができ、かつ任
意の方向のあおり変位を容易に与えることができ、さら
に機構を小さくかつコンパクトにまとめることができる
。このように、この発明の効果は顕著である。As explained above, in the tilting support mechanism according to the present invention, the interference between the shafts at the 15th position that gives tilting displacement is very small, so positioning work can be done in a short time, and it is possible to provide a large tilting displacement. It is possible to easily apply tilting displacement in any direction, and furthermore, the mechanism can be made small and compact. As described above, the effects of this invention are remarkable.
第1図はこの発明に係るあおり支持機構を有するX線露
光装置のマスクステージを示す平面図、第2図は第1図
のA−0−A断面図、第3図は電磁石に流す電流とあお
り変位、Z軸方向変位との関係を示すグラフ、第4図、
第5図はそれぞれ交差指バネを示す図、第6図は従来の
あおり支持機構を有するX線露光装置のマスクステージ
を示す平面図、第7図は同じく正断面図である。
5〜8・・・電磁石
13・・・マスクホルダ取付枠
14・・・マスクステージ支持枠
16〜19・・・交差指バネ
24〜27・・・切れ口Fig. 1 is a plan view showing a mask stage of an X-ray exposure apparatus having a tilt support mechanism according to the present invention, Fig. 2 is a sectional view taken along A-0-A in Fig. Graph showing the relationship between tilt displacement and Z-axis direction displacement, Figure 4.
FIG. 5 is a diagram showing interdigital springs, FIG. 6 is a plan view showing a mask stage of an X-ray exposure apparatus having a conventional tilt support mechanism, and FIG. 7 is a front sectional view. 5-8... Electromagnet 13... Mask holder mounting frame 14... Mask stage support frame 16-19... Interdigital springs 24-27... Cut ends
Claims (1)
材と上記第2部材とのあおり変位を非接触で変化させる
あおり手段が設けられたあおり支持機構において、上記
バネとして柱状でかつ柱軸と直角な切れ目を設けた複数
の交差指バネを用いたことを特徴とするあおり支持機構
。A tilting support mechanism in which a first member and a second member are connected by a spring and is provided with tilting means for changing tilting displacement between the first member and the second member without contact, wherein the spring is columnar and A tilting support mechanism characterized by the use of multiple interdigital springs with cuts perpendicular to the column axis.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59211288A JPS6190432A (en) | 1984-10-11 | 1984-10-11 | Flap support mechanism |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59211288A JPS6190432A (en) | 1984-10-11 | 1984-10-11 | Flap support mechanism |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6190432A true JPS6190432A (en) | 1986-05-08 |
Family
ID=16603447
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59211288A Pending JPS6190432A (en) | 1984-10-11 | 1984-10-11 | Flap support mechanism |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6190432A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009243628A (en) * | 2008-03-31 | 2009-10-22 | Ihi Corp | Spring with freely-settable-spring-constant, and vibrator support device using the same |
JP2010014596A (en) * | 2008-07-04 | 2010-01-21 | Ihi Corp | Rotary machine support device |
JP2010025862A (en) * | 2008-07-23 | 2010-02-04 | Ihi Corp | Rotary machine support device and design method thereof |
JP2012233594A (en) * | 2012-08-24 | 2012-11-29 | Ihi Corp | Rotating machine supporting device and vibration characteristics measuring method using the same |
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---|---|---|---|---|
JPS5373078A (en) * | 1976-12-13 | 1978-06-29 | Nippon Telegr & Teleph Corp <Ntt> | Fine adjustment mechanism of electromagnetic driving type |
JPS5614233B2 (en) * | 1974-11-29 | 1981-04-02 | ||
JPS58103136A (en) * | 1981-12-16 | 1983-06-20 | Nippon Kogaku Kk <Nikon> | Gap setter |
JPS5917341B2 (en) * | 1978-11-02 | 1984-04-20 | フオ−ド モ−タ− カンパニ− | Evaporator for air conditioner |
-
1984
- 1984-10-11 JP JP59211288A patent/JPS6190432A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5614233B2 (en) * | 1974-11-29 | 1981-04-02 | ||
JPS5373078A (en) * | 1976-12-13 | 1978-06-29 | Nippon Telegr & Teleph Corp <Ntt> | Fine adjustment mechanism of electromagnetic driving type |
JPS5917341B2 (en) * | 1978-11-02 | 1984-04-20 | フオ−ド モ−タ− カンパニ− | Evaporator for air conditioner |
JPS58103136A (en) * | 1981-12-16 | 1983-06-20 | Nippon Kogaku Kk <Nikon> | Gap setter |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009243628A (en) * | 2008-03-31 | 2009-10-22 | Ihi Corp | Spring with freely-settable-spring-constant, and vibrator support device using the same |
JP2010014596A (en) * | 2008-07-04 | 2010-01-21 | Ihi Corp | Rotary machine support device |
JP2010025862A (en) * | 2008-07-23 | 2010-02-04 | Ihi Corp | Rotary machine support device and design method thereof |
JP2012233594A (en) * | 2012-08-24 | 2012-11-29 | Ihi Corp | Rotating machine supporting device and vibration characteristics measuring method using the same |
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