JPS6148201A - Low noise amplifier - Google Patents
Low noise amplifierInfo
- Publication number
- JPS6148201A JPS6148201A JP16926184A JP16926184A JPS6148201A JP S6148201 A JPS6148201 A JP S6148201A JP 16926184 A JP16926184 A JP 16926184A JP 16926184 A JP16926184 A JP 16926184A JP S6148201 A JPS6148201 A JP S6148201A
- Authority
- JP
- Japan
- Prior art keywords
- waveguide
- amplifier circuit
- amplifier
- noise amplifier
- low noise
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Non-Reversible Transmitting Devices (AREA)
- Waveguides (AREA)
- Microwave Amplifiers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、マイクロ波ないしミリ波帯の無線装置に用い
られる低雑音増幅器に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a low-noise amplifier used in radio equipment in microwave or millimeter wave bands.
マイクロ波ないしミリ波帯の無線通信、特に衛星通信に
おいては、受信電波が極めて微弱であるため、受信装置
の受信部(アンテナ)の直後に用いる増幅器を、増幅器
自身の発する雑音が極めて低レベルの低雑音増幅器とす
ることが必要である。In microwave or millimeter wave band wireless communications, especially in satellite communications, the received radio waves are extremely weak, so the amplifier used immediately after the receiving section (antenna) of the receiving device must be installed with an extremely low level of noise emitted by the amplifier itself. It is necessary to use a low noise amplifier.
増幅器の雑音レベル低減の方法として、増幅器を冷却す
る方法が従来一般に採用されている。Conventionally, as a method for reducing the noise level of an amplifier, a method of cooling the amplifier has been generally adopted.
従来の冷却式低雑音増幅器の構造は、増幅回路を金属筐
体内に収容し、この筐体を冷却装置により冷却するよう
にしたものであり、その−例を第4図に縦断面図で示し
である。同図中、符号1が増幅回路を示し、これは増幅
素子、例えばFET(電界効果トランジスタ)チップ1
aをキャリア1bに搭載してマイクロ波I C(MIり
化したものである。増幅回路1は金属の筐体2内に収容
され、入力(IN)及び出方(OUT)用の導波管3.
4に同軸線路を介して結合されている。筺体2及び導波
管3,4はケース5内に収容され、更にケース5内には
電子冷却モジュール6を低温側が筐体2の底面に、また
高温側がケース5にそれぞれ接する如く多段配置しであ
る。これにより筺体2が冷却され、増幅回路が一50℃
程度に冷却される。尚、符号7はケース5内に詰められ
た断熱材を示し、符号8はケース外面に設けられた放熱
フィンを示すO
〔発明が解決しようとする問題点〕
上記のように従来技術は、増幅回路を金属筐体中に収容
し、この筐体を介して間接的に冷却する構造であるため
、構造が複雑であるという問題だけでなく、筐体を含む
被冷却部が大形で熱容量が大きぐ且つ外部からの熱流入
が多いので冷却効率が悪いという問題がある。その対策
として近年では上記例の如く増幅回路’i MIC化す
るなど、被冷却部の小形化が図られているが、それにも
限界がある。The structure of a conventional cooled low-noise amplifier is such that the amplifier circuit is housed in a metal casing, and this casing is cooled by a cooling device. It is. In the figure, reference numeral 1 indicates an amplifier circuit, which is an amplifier element such as an FET (field effect transistor) chip 1.
A is mounted on a carrier 1b and converted into a microwave IC (MI).The amplifier circuit 1 is housed in a metal housing 2, and has waveguides for input (IN) and output (OUT). 3.
4 via a coaxial line. The housing 2 and the waveguides 3 and 4 are housed in a case 5, and inside the case 5, electronic cooling modules 6 are arranged in multiple stages such that the low temperature side is in contact with the bottom surface of the housing 2 and the high temperature side is in contact with the case 5. be. As a result, the housing 2 is cooled, and the amplifier circuit is cooled down to -50°C.
cooled down to a certain degree. In addition, the reference numeral 7 indicates a heat insulating material packed inside the case 5, and the reference numeral 8 indicates a heat dissipation fin provided on the outer surface of the case. Since the circuit is housed in a metal casing and is indirectly cooled through the casing, it not only has a complicated structure, but also has a large heat capacity due to the large size of the parts to be cooled, including the casing. Since it is large and there is a lot of heat inflow from the outside, there is a problem that cooling efficiency is poor. In recent years, attempts have been made to reduce the size of the cooled portion as a countermeasure, such as by converting the amplifier circuit to an MIC as in the above example, but there are limits to this as well.
本発明による低雑音増幅器は、上記問題点を解決するた
めに、導波管の一部をカットオフ形状に形成し、該カッ
トオフ形状部分にMIC化された増幅回路を実装し、更
に該増幅回路を直接冷却可能な冷却装置を備えた構成と
したものである。In order to solve the above-mentioned problems, the low noise amplifier according to the present invention forms a part of the waveguide into a cutoff shape, mounts an MIC amplification circuit in the cutoff shape part, and further mounts the amplification circuit in the cutoff shape. The configuration includes a cooling device that can directly cool the circuit.
上記構造においては、MIC化した増幅回路を導波管の
力、トオフ形状部分に実装しであるので、構造が単純で
小形となシ、シかも増幅回路を直接冷却するので効率的
な冷却が可能である。In the above structure, the MIC amplifier circuit is mounted on the to-off shape part of the waveguide, so the structure is simple and compact.The amplifier circuit is directly cooled, so efficient cooling is possible. It is possible.
尚、導波管を熱伝導の小さい材料で形成すれば、外部か
らの熱流入が小さく、冷却効率を一層向上し得る。Note that if the waveguide is formed of a material with low thermal conductivity, the inflow of heat from the outside will be small, and the cooling efficiency can be further improved.
以下、図面を参照して本発明の実゛施例を詳細に説明す
る。Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
第1図は本発明による低雑音増幅器の一実施例の縦断面
図である。同図中、符号10は導波管を示し、第2図は
この導波管10の水平断面図である。導波管10は熱伝
導率の小さい材料、例えばグラスチック材料で作られ、
その表面に金属メッキを施したものである。第1図及び
第2図に示すように、導波管10の中央部分11は両端
の入出力部に対して高さ及び横幅が共にチーzf−状に
狭められ、いわゆるカットオフ形状に形成されている。FIG. 1 is a longitudinal sectional view of an embodiment of a low noise amplifier according to the present invention. In the figure, reference numeral 10 indicates a waveguide, and FIG. 2 is a horizontal sectional view of this waveguide 10. The waveguide 10 is made of a material with low thermal conductivity, for example, a glass material,
Its surface is plated with metal. As shown in FIGS. 1 and 2, the central portion 11 of the waveguide 10 is narrowed in height and width with respect to the input and output portions at both ends, and is formed into a so-called cut-off shape. ing.
との導波管10のカットオフ形状部分11に増幅回路1
2が実装されている。この増幅回路はFETチッ7’1
2a’iキャリア12b上に搭載してなるMIC化され
たものであシ、キャリア12bを導波管10の底壁に形
成した穴に嵌入させた状態で実装しである。導波管10
と増幅回路12との結合は、図示してないが、アンテナ
による電界結合、またはループあるいはりツノによる磁
界結合等、周知の結合構造である。尚、導波管10への
増幅回路12の実装作業は、例えば導波管10を上下二
分割構造とすることによシ容易に実施可能である。An amplifier circuit 1 is placed in the cut-off shaped portion 11 of the waveguide 10.
2 has been implemented. This amplifier circuit uses FET chip 7'1
2a'i The MIC is mounted on a carrier 12b, and the carrier 12b is mounted in a hole formed in the bottom wall of the waveguide 10. waveguide 10
Although not shown, the coupling between the amplifier circuit 12 and the amplifier circuit 12 is a well-known coupling structure such as electric field coupling using an antenna or magnetic field coupling using a loop or horn. Incidentally, the work of mounting the amplifier circuit 12 on the waveguide 10 can be easily carried out by, for example, forming the waveguide 10 into an upper and lower halves.
導波管10はケース13内に両端部を7ランノ14で固
定されて収容されている。そし、てケース13に電子冷
却モノュール15を低温側が増幅回路12のキャリア1
2bに、また高温側がケース13にそれぞれ接するよう
に多段配置されている。゛これにより増幅回路12は一
50℃程度に冷却さく5) 、
。The waveguide 10 is housed in a case 13 with both ends fixed with seven runs 14. Then, the electronic cooling monoule 15 is installed in the case 13, with the low temperature side being the carrier 1 of the amplifier circuit 12.
2b, and are arranged in multiple stages so that the high temperature side is in contact with the case 13, respectively.゛Thus, the amplifier circuit 12 is cooled to about -50°C5).
.
れる◎尚、符号16及び17はそれぞれ断熱材及び放熱
フィンを示す。◎Note that numerals 16 and 17 indicate a heat insulating material and a radiation fin, respectively.
尚また、第1図及び第2図の実施例では導波管10のカ
ットオフ形状部分11を高さ及び横幅の両方をチー・臂
−状に狭めて形成しであるが、カットオフ形状としては
幅を狭めるだけで十分であり、高さを狭めることは必ず
しも必要ない。しかし高さも狭めることは、導波管と増
幅回路との結合効率向上に寄与する。In addition, in the embodiments shown in FIGS. 1 and 2, the cutoff-shaped portion 11 of the waveguide 10 is formed by narrowing both the height and the width in the shape of a bow. It is sufficient to narrow the width, and it is not necessarily necessary to narrow the height. However, narrowing the height also contributes to improving the coupling efficiency between the waveguide and the amplifier circuit.
更に、導波管のカットオフ形状としてはテーノf−形状
に限定されない。例えば、第3図に示す他の実施例の導
波管10Aのカットオフ形状部分11Aはステップ形状
であり、これでもチー/4’ −形状の場合とほぼ同様
の機能が得られる。Furthermore, the cutoff shape of the waveguide is not limited to the Theno f-shape. For example, the cutoff-shaped portion 11A of the waveguide 10A of the other embodiment shown in FIG. 3 has a step shape, and this can also provide substantially the same function as in the case of the Chi/4'-shape.
本発明によれば、増幅回路を導波管の内部に実装するた
め、従来のように増幅回路を収容する筐体を用いる必要
がなく、構造が非常に簡単になる。According to the present invention, since the amplifier circuit is mounted inside the waveguide, there is no need to use a casing for accommodating the amplifier circuit as in the conventional case, and the structure becomes extremely simple.
また、増幅回路を直接冷却できるので、従来のように金
属筐体を介して間接的に冷却する場合に比べて、被冷却
部の熱容量が小さく、それだけ冷却効率の向上が可能で
ある。Furthermore, since the amplifier circuit can be directly cooled, the heat capacity of the cooled section is smaller than in the conventional case where it is indirectly cooled through a metal casing, and the cooling efficiency can be improved accordingly.
更に、前述したように導波管を熱伝導率の小さい材料で
作れば、外部からの熱流入を少なくでき、冷却効率の一
層の向上を実現可能である。Furthermore, as described above, if the waveguide is made of a material with low thermal conductivity, the inflow of heat from the outside can be reduced, and further improvement in cooling efficiency can be realized.
第1図及び第2図は本発明による低雑音増幅器の一実施
例を示す図で、第1図はそれの縦断面図、第2図はそれ
の導波管の水平断面図である。
第3図は本発明の他の実施例の導波管の水平断面図であ
る。
第4図は従来の低雑音増幅器の一例の縦断面図である。
10.10A・・・導波管、11.11A・・・カット
オフ形状部分、12・・・増幅回路、12a・・・FE
Tチッノ、12b・・・キャリア、13・・・ケース、
14・・・7ランジ、15・・・電子冷却モジュール、
16・・・断熱材、17・・・放熱フィン。
も1図
第3図1 and 2 are diagrams showing an embodiment of a low noise amplifier according to the present invention, with FIG. 1 being a longitudinal sectional view thereof, and FIG. 2 being a horizontal sectional view of a waveguide thereof. FIG. 3 is a horizontal sectional view of a waveguide according to another embodiment of the present invention. FIG. 4 is a longitudinal sectional view of an example of a conventional low noise amplifier. 10.10A...Waveguide, 11.11A...Cutoff shape part, 12...Amplification circuit, 12a...FE
T Chicno, 12b...Carrier, 13...Case,
14...7 lunge, 15...electronic cooling module,
16...Insulating material, 17...Radiating fin. Figure 1 Figure 3
Claims (1)
オフ形状部分にマイクロ波IC化された増幅回路を実装
し、更に該増幅回路を直接冷却可能な冷却装置を備えた
ことを特徴とする低雑音増幅器。 2、導波管が熱伝導率の小さい材料で形成されているこ
とを特徴とする特許請求の範囲第1項記載の低雑音増幅
器。 3、冷却装置が電子冷却モジュールであることを特徴と
する特許請求の範囲第1項に記載の低雑音増幅器。[Claims] 1. A part of the waveguide is formed into a cutoff shape, an amplification circuit formed as a microwave IC is mounted in the cutoff shape part, and a cooling device that can directly cool the amplification circuit is provided. A low noise amplifier characterized by comprising a device. 2. The low noise amplifier according to claim 1, wherein the waveguide is made of a material with low thermal conductivity. 3. The low noise amplifier according to claim 1, wherein the cooling device is an electronic cooling module.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16926184A JPS6148201A (en) | 1984-08-15 | 1984-08-15 | Low noise amplifier |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16926184A JPS6148201A (en) | 1984-08-15 | 1984-08-15 | Low noise amplifier |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6148201A true JPS6148201A (en) | 1986-03-08 |
Family
ID=15883226
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16926184A Pending JPS6148201A (en) | 1984-08-15 | 1984-08-15 | Low noise amplifier |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6148201A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6236366B1 (en) | 1996-09-02 | 2001-05-22 | Olympus Optical Co., Ltd. | Hermetically sealed semiconductor module composed of semiconductor integrated circuit and antenna element |
JP6289770B2 (en) * | 2016-03-18 | 2018-03-07 | 三菱電機株式会社 | Phase shift circuit and power supply circuit |
-
1984
- 1984-08-15 JP JP16926184A patent/JPS6148201A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6236366B1 (en) | 1996-09-02 | 2001-05-22 | Olympus Optical Co., Ltd. | Hermetically sealed semiconductor module composed of semiconductor integrated circuit and antenna element |
JP6289770B2 (en) * | 2016-03-18 | 2018-03-07 | 三菱電機株式会社 | Phase shift circuit and power supply circuit |
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