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JPS6141268A - Close adhesion type image sensor - Google Patents

Close adhesion type image sensor

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Publication number
JPS6141268A
JPS6141268A JP16337784A JP16337784A JPS6141268A JP S6141268 A JPS6141268 A JP S6141268A JP 16337784 A JP16337784 A JP 16337784A JP 16337784 A JP16337784 A JP 16337784A JP S6141268 A JPS6141268 A JP S6141268A
Authority
JP
Japan
Prior art keywords
transparent
film
photoelectric conversion
image sensor
protective film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16337784A
Other languages
Japanese (ja)
Inventor
Naoyuki Echigo
越後 直行
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP16337784A priority Critical patent/JPS6141268A/en
Publication of JPS6141268A publication Critical patent/JPS6141268A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To keep a constant distance between the surface of an original and a photoelectric conversion element and also to prevent the deterioration of picture quality due to the an injury or stain produced by the friction between the original and a transparent protection film, by putting said protection film replaceably and movably between the original and the photoelectric conversion element. CONSTITUTION:A light shielding film 4 which is optically opaque and insulated electrically is provided on a transparent substrate 3 of glass, etc. excluding the part of a transparent window 19 together with a photoelectric conversion element 5 and an electrode 6 and a transparent electrode 7 set at both ends of the substrate 3 respectively. Furthermore a transparent protection film 2 is put between an original 1 and the element 5. The film 2 uses a comparatively hard material such as polyimide, polycarbonate, transparent acrylic material, etc. The thickness of the film 2 is properly decided from the luminous intensity, the image resolution, etc. A luminous flux 8 given from a light source is irradiated to the original 1 through the window 19 and this reflected light is caught by the element 5. The film 2 and the substrate 3 are separate from each other. Thus the film 2 is injured or soiled can be replaced with another nondefective one or can be shifted. In such a way, the high picture quality is secured again.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明け、ファクシミリや文書ファイル等の読取り系
に使用し、原稿に密着して読取りを行なう密着形イメー
ジセンサに関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a contact type image sensor that is used in a reading system for facsimiles, document files, etc., and performs reading in close contact with a document.

〔従来の技術〕[Conventional technology]

従来、ファクタj IJ等の装置の小型化を目的に数種
の密着形イメージセンサの提案が成されている。例えば
図示してないが、集光性光ファイバアレイを用いて、原
稿の正立等倍像をイメージセンサ上に結像はせる方式や
、第2図に示すような密着形イメージセンサの透明保護
層9と原稿1とを接触略せて、透明基板3の下方より照
明し反射光を光電変換素子で捕獲し光′IIj変換する
方式などである。例えば特開昭55−74262、特開
昭56−27562、特開昭58−127463の各号
公報に透明基板下方より照明する方式の種々が開示され
ている。
Conventionally, several types of contact image sensors have been proposed for the purpose of downsizing devices such as factor j IJ. For example, although not shown, there is a method that uses a light-condensing optical fiber array to form an erect, same-size image of a document on an image sensor, and a transparent protection method for a contact type image sensor as shown in Figure 2. For example, the layer 9 and the original 1 are brought into contact with each other, the transparent substrate 3 is illuminated from below, the reflected light is captured by a photoelectric conversion element, and the light is converted into 'IIj'. For example, various methods of illuminating a transparent substrate from below are disclosed in Japanese Patent Application Laid-open Nos. 55-74262, 1982-27562, and 58-127463.

r発明が解決しようとする問題点〕 しかし従来の密着形イメージセンサけ、それぞれに欠点
を有していた。集光性ファイバアレイを用いる方式は集
光性ファイバアレイが高価であり焦点調整も複雑であり
、また第2図に示1,7た方式の場合は原稿1と透明保
護層9とが摩擦するので、透明保護層9には傷や汚れが
発生し、信頼性を著しく低下し実用化に至ってない。ま
たレンズ系を用いないので原稿1に照明される照度や、
光電変換素子の集積度に係る解像度の関係上、原稿1と
光電変換素子5との間隔は100μm以下であり、非接
触でその間隔を保つのけ困難である。また透明保護層9
を形成するには、ガラスのスパッタ膜や透明樹脂、ある
いけ薄板ガラスのけり付などがあるが、透明保護層の厚
さけ30〜80μmと厚く、薄寝技術で形成するには困
難であり、透明樹脂の塗布では均一な膜厚を得難く、薄
板ガラスのけりつけけコヌトが高いなどの問題点を有し
ていた。
[Problems to be Solved by the Invention] However, each of the conventional contact type image sensors has its own drawbacks. In the method using a condensing fiber array, the condensing fiber array is expensive and the focus adjustment is complicated, and in the case of the method 1 and 7 shown in FIG. 2, the original 1 and the transparent protective layer 9 are rubbed. Therefore, scratches and stains occur on the transparent protective layer 9, which significantly reduces reliability and has not been put to practical use. In addition, since no lens system is used, the illuminance of the original 1
Due to the resolution related to the degree of integration of the photoelectric conversion elements, the distance between the original 1 and the photoelectric conversion element 5 is 100 μm or less, and it is difficult to maintain this distance without contact. Also, transparent protective layer 9
To form this, there are methods such as sputtering of glass, transparent resin, and coating of thin glass, but the thickness of the transparent protective layer is as thick as 30 to 80 μm, and it is difficult to form it using thin layer technology. When coating a transparent resin, it is difficult to obtain a uniform film thickness, and there are problems such as high resistance to thin glass.

そこでこの発明は従来のこのような欠点を解決するため
、原稿と接触する部分が汚れたり、傷がついても使用で
きる安価な密着型イメージセンサを得ることを目的とし
ている、 r問題点を解決するための手段〕 上記問題点を解決するためにこの発明け、摩擦する限り
汚れや傷の発生を止めろことは困難であるため、従来の
透明保ilI層に相当する部分を透明保護フィルムとし
て構成し、透明基板と一体に形成せずに交換あるいけ移
動か可能な構成にした。
Therefore, in order to solve these conventional drawbacks, the present invention aims to provide an inexpensive contact type image sensor that can be used even if the part that contacts the original is dirty or scratched. Means for Solving the Problems] In order to solve the above-mentioned problems, this invention was developed.Since it is difficult to prevent stains and scratches from occurring as long as there is friction, the portion corresponding to the conventional transparent protective film is constructed as a transparent protective film. The structure allows for replacement or movement without being integrally formed with the transparent substrate.

r作用〕 上記のように構成された密着形イメージセンサで原稿を
読取ると、原稿の面と光電変換素子との距離は透明保護
フィルムの属人によって決まり、密着形イメージセンサ
全域に亘って均一に保たれまfc原稿と透明保護フィル
ムとは摩擦するので、いずれは傷や汚れが発生するが、
透明保護フィルムを交換あるいけ移動はせることによっ
て信頼性が保たれることになる。
r effect] When a document is read with the contact type image sensor configured as described above, the distance between the surface of the document and the photoelectric conversion element is determined by the thickness of the transparent protective film, and is uniformly distributed over the entire area of the contact type image sensor. Because there is friction between the fc original and the transparent protective film, scratches and dirt will eventually occur, but
Reliability can be maintained by replacing or moving the transparent protective film.

〔実施例〕〔Example〕

以下にこの発明の実施例を図面にもとづいて説明する。 Embodiments of the present invention will be described below based on the drawings.

第1図において、ガラスなどの透明基板3上に光学的に
不透明で電気的に絶縁体、例えばシリコンゲルマニウム
等の材料から成る遮光膜4を透明窓190部分を除いて
設け、さらにcds。
In FIG. 1, a light-shielding film 4 made of an optically opaque and electrically insulating material, such as silicon germanium, is provided on a transparent substrate 3 such as glass, except for a transparent window 190, and a CDS.

cd seや非晶質シリコン等の光電変換素子5を設け
、両端からクロムや金などから成る電極6と酸化錫や酸
化インジウム等から成る透明電極7を設けるところまで
は従来の技術と全く同様に構成できる。透明保護フィル
ム2け原稿1と光電変換素子5と間に介在させである。
The process is exactly the same as the conventional technology until a photoelectric conversion element 5 made of CD SE or amorphous silicon is provided, and an electrode 6 made of chromium, gold, etc. and a transparent electrode 7 made of tin oxide, indium oxide, etc. are provided from both ends. Can be configured. Two transparent protective films are interposed between the original 1 and the photoelectric conversion element 5.

透明併設フィルJ−2け例えばポリイミドやポリカーボ
ネート、ある1ハは透明アクリル等の比較的硬い材料が
良く、属人は照度や解像度から最適な厚みを選ぶ。例え
ば1龍当98ドツトの光電変換素子5の場合け70μm
近辺のフィルムが適し、安価に作ることができる。
Transparent film J-2 is preferably made of a relatively hard material such as polyimide or polycarbonate, and for some, transparent acrylic, and the individual chooses the optimal thickness based on illuminance and resolution. For example, in the case of a photoelectric conversion element 5 with 98 dots per dragon, the diameter is 70 μm.
Films in the vicinity are suitable and can be produced at low cost.

透明保護フィルム2と透明基板3とは一体に形成されて
ないので、透明保護フィルム2に傷がついたり汚れた場
合には交換したり、移動して再度良好な画質を得ること
が可能となる。第1図の実施例はこの発明の密着形イメ
ージセンサの断面図を示すもので、従来の場合と同様に
紙面垂直方向に光電変換素子5けアレイ状に並んでいる
。8d図   ′示してないLEDや螢光灯などの光源
からの光束であり、透明窓19を通って原稿1を照明し
、その反射光が光電変換素子5に捕獲される様子を示し
ている。
Since the transparent protective film 2 and the transparent substrate 3 are not integrally formed, if the transparent protective film 2 becomes scratched or dirty, it can be replaced or moved to obtain good image quality again. . The embodiment shown in FIG. 1 shows a cross-sectional view of a contact type image sensor of the present invention, in which five photoelectric conversion elements are arranged in an array in the direction perpendicular to the plane of the paper, as in the conventional case. Figure 8d 'This is a luminous flux from a light source such as an LED or a fluorescent light (not shown), which illuminates the document 1 through the transparent window 19, and shows how the reflected light is captured by the photoelectric conversion element 5.

第3図は透明保護フィルム2を交換可能な状態に構成し
た実施例、7’l断面図であり、支持台10上に透明保
護フィルム2を乗せ、ネジやバネなどの固定部材11で
固定する。原稿1と透明保護フィルム2とが摩擦する部
分に傷や汚れが発生し次場合は、透明保護フィルム2を
交換することばよって再び性症を確保することが可能と
なる。図示してないが、原稿1と光電変換素子5との間
隔を保つために、ゴムローラで軽く原稿を押し当てる構
造にすると良い。
FIG. 3 is a 7'l sectional view of an embodiment in which the transparent protective film 2 is configured to be replaceable. The transparent protective film 2 is placed on a support base 10 and fixed with fixing members 11 such as screws and springs. . If scratches or stains occur in the area where the document 1 and the transparent protective film 2 rub against each other, the transparent protective film 2 can be replaced to prevent sexually transmitted diseases again. Although not shown, in order to maintain the distance between the original 1 and the photoelectric conversion element 5, it is preferable to use a structure in which the original is lightly pressed with a rubber roller.

第4図は透明保護フィルムを移動可能な構成にした実施
例の断面図であり、巻取部12に透明伏護フィルム2を
巻きつけておき、手動もしくけ自動的に送ることによっ
て、常に傷や汚れのない状態を伏つことができる。移動
可能な構成なら巻取方式に限定する必要はない。このよ
うに構成することによって透明保護フィルム2をカート
リッジとして装着着脱することができろ。透明保護フィ
ルム2を移動略せる機構はステノブモータで巻取部12
を回転ばせたり、ゴムローラで送るなど公知の技術で達
成することができる。
FIG. 4 is a sectional view of an embodiment in which the transparent protective film is configured to be movable.The transparent protective film 2 is wound around the winding section 12 and is fed manually or automatically, so that it is always protected against scratches. It can be laid down in a clean and clean condition. If the structure is movable, there is no need to limit it to the winding method. With this configuration, the transparent protective film 2 can be attached and detached as a cartridge. The mechanism for moving the transparent protective film 2 is the winding section 12 using a steno knob motor.
This can be achieved using known techniques such as rotating or feeding with rubber rollers.

第5図は透明保護フィルム上に照明窓14を設けた実施
例の断面図である。透明保護フィルム上に塗料や金属な
どの光学的に不透明な材料で照明窓14を除いて原稿遮
光膜13を設けである。これによって原稿の照明領域が
制限されるので、光電変換素子5に入射する光束が制限
はれるので、解像度が向上する。
FIG. 5 is a sectional view of an embodiment in which an illumination window 14 is provided on a transparent protective film. A document light-shielding film 13 is provided on the transparent protective film except for the illumination window 14 using an optically opaque material such as paint or metal. This limits the illumination area of the original, thereby limiting the light flux that enters the photoelectric conversion element 5, thereby improving resolution.

第6図は透明保護フィルム2上にフィルム保護1[15
を設けた実施例の1面図である。フィルム保護膜15け
酸化アルミや窒化シリコンなどの高硬質の薄膜で、スパ
ッタなどで形成できる。これによって透明保護フィルム
2の寿命を伸ばすことが可能となる。
Figure 6 shows film protection 1 [15] on transparent protection film 2.
FIG. Film protective film 15 A highly hard thin film made of aluminum oxide or silicon nitride, which can be formed by sputtering or the like. This makes it possible to extend the life of the transparent protective film 2.

第7図は光電変換素子5の材質として、水素化非晶質シ
リコンを用いた実施例の断固図である、水素化非晶質シ
リコンは分光感度特性が良好で、光応答速度が速く、大
型化が可能な材質であり、グロー放電分解法などで成嘆
する。この実施例の場合は、透明電極7とクロムなどの
電極6とで光!変換素子5をサンドイヴチ構造にした例
で示しであるが、PIN構造などでも良い。
FIG. 7 is a detailed diagram of an example in which hydrogenated amorphous silicon is used as the material of the photoelectric conversion element 5. Hydrogenated amorphous silicon has good spectral sensitivity characteristics, fast optical response speed, and large size. It is a material that can be decomposed using glow discharge decomposition methods. In the case of this embodiment, the transparent electrode 7 and the electrode 6 made of chromium or the like are used to generate light! Although an example is shown in which the conversion element 5 has a sandwich structure, it may also have a PIN structure or the like.

第8図は光電変換素子上に透明保護膜を設けた実施例の
断面図である。透明保護膜16け通常の集積回路の表面
保護膜と同様で良く、9化シリコンや、りん酸化シリコ
ン嘆で良い。この場合の表面保護膜16け厚くする必要
は無く、透明保護フィルム2の摩擦に耐えるのみで十分
である。
FIG. 8 is a sectional view of an embodiment in which a transparent protective film is provided on a photoelectric conversion element. The transparent protective film 16 may be similar to the surface protective film of a normal integrated circuit, and may be silicon 9ide or silicon phosphate. In this case, it is not necessary to make the surface protective film 16 thicker, and it is sufficient to withstand the friction of the transparent protective film 2.

第9図は遮光膜4上に透明絶縁膜17を設けた実施例の
断面図である。遮光膜4を金属のように電気的導体を用
いる場合には電極6や透明電極7と遮光膜4とは絶縁こ
れる必要があり、そのために窒化シリコン簿膜や酸化シ
リコン薄膜を透明絶縁膜17として設ければ良い。
FIG. 9 is a sectional view of an embodiment in which a transparent insulating film 17 is provided on the light shielding film 4. When the light shielding film 4 is made of an electrical conductor such as metal, it is necessary to insulate the electrode 6 or the transparent electrode 7 from the light shielding film 4. For this purpose, a silicon nitride film or a silicon oxide thin film is used as the transparent insulating film 17. You can set it as .

第10図は透明保護フィルム2と光電変換素子5との間
に透明潤滑剤を介在ζせた実施例の断面図である。透明
潤滑剤18は例えばシリコンオイルなどで、透明仇護フ
ィルム2と光N変換素子5との間の摩擦による傷の発生
を押上、ゴミの粒子を周囲に移動きせる働きを有する。
FIG. 10 is a sectional view of an embodiment in which a transparent lubricant is interposed between the transparent protective film 2 and the photoelectric conversion element 5. The transparent lubricant 18 is, for example, silicone oil, and has the function of suppressing scratches caused by friction between the transparent protection film 2 and the optical N conversion element 5 and moving dust particles to the surrounding area.

以上のような実施例において、原稿を圧接する方法とし
ては、ゴムローラで圧接したり、バネで圧接する方法な
ど各種の方法がある。透明保護フィルム2の厚味が均一
なら、原s1と光電変換素子5との距離は一定し、従っ
て解像度のバラツキも少なくなる。又透明保護フィルム
と光電変換素子側とは接触するが、摩擦頻度は少なく、
傷や汚れに対し心配は要らない。光電変換素子側に透明
保護膜を設けるのけ集積回路と同様、信頼性確保のため
一般的だが、従来のように極端に厚くする必要はない。
In the embodiments described above, there are various methods for pressing the document, such as pressing with a rubber roller and pressing with a spring. If the thickness of the transparent protective film 2 is uniform, the distance between the original s1 and the photoelectric conversion element 5 will be constant, and therefore variations in resolution will be reduced. Also, although the transparent protective film and the photoelectric conversion element side come into contact, the frequency of friction is low;
No need to worry about scratches or dirt. Similar to integrated circuits, a transparent protective film is provided on the photoelectric conversion element side to ensure reliability, but there is no need to make it extremely thick as in the past.

〔発明の効果〕〔Effect of the invention〕

この発明は以上説明したように、原稿と光′[変換素子
との間に透明保護フィルムを交換や移動可能な状態に介
在させるという極めて簡単な構造で解像度のバラツキが
少なく、傷や汚れによる画質の低下を回避することがで
き、極めて安価に構成することができ、性能上もコスト
上も共に優れた効果がある、
As explained above, this invention has an extremely simple structure in which a transparent protective film is interposed between the original and the light conversion element in a replaceable and movable state, and there is little variation in resolution, resulting in poor image quality due to scratches and dirt. It is possible to avoid a decrease in

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの発明にかかる密着形イメージセンサの断面
図、 第2図は従来の密着形イメージセンサのn面図。 第3図乃至第10図はこの発明にかかる密着形イメージ
センサb各部の実施例を示す断面図である。 1・・原稿      2・・透明保護フィルム3・・
透明基板    5・・光IKK換素子10・・支持台
     11・・固定部材12・・巻取部     
13・・原稿遮光膜14・・照明窓     15・・
フィルム惺護膜16・・透明保護@17・・透明絶縁膜
18・・透明潤滑剤         以 上田願人 
セイコー電子工業株式会社 第1図 !、!稿 第3 Ey、j 第5図
FIG. 1 is a sectional view of a contact type image sensor according to the present invention, and FIG. 2 is an n-plane view of a conventional contact type image sensor. 3 to 10 are cross-sectional views showing embodiments of various parts of the contact type image sensor b according to the present invention. 1. Original 2. Transparent protective film 3.
Transparent substrate 5... Optical IKK conversion element 10... Support stand 11... Fixing member 12... Winding section
13... Original light-shielding film 14... Lighting window 15...
Film protective film 16...Transparent protection@17...Transparent insulating film 18...Transparent lubricant Above, Ganto Ueda
Seiko Electronics Industries Co., Ltd. Figure 1! ,! Draft No. 3 Ey, j Figure 5

Claims (9)

【特許請求の範囲】[Claims] (1)透明基板上に配列された光電変換素子を原稿に密
着し、該透明基板の原稿側とは反対の方向より照明し、
反射光を捕獲し光電変換するイメージセンサにおいて、
光電変換素子と原稿との間に透明保護フィルムを該透明
基板と一体に形成せずに介在させたことを特徴とする密
着形イメージセンサ。
(1) photoelectric conversion elements arranged on a transparent substrate are brought into close contact with a document, and illuminated from the direction opposite to the document side of the transparent substrate;
In image sensors that capture reflected light and convert it into electricity,
A contact type image sensor characterized in that a transparent protective film is interposed between a photoelectric conversion element and a document without being formed integrally with the transparent substrate.
(2)透明保護フィルムは支持台及び固定部材によって
交換可能な構成であることを特徴とする特許請求の範囲
第1項記載の密着形イメージセンサ。
(2) The contact type image sensor according to claim 1, wherein the transparent protective film is configured to be replaceable using a support stand and a fixing member.
(3)透明保護フィルムは該光電変換素子に対して移動
可能な構成であることを特徴とする特許請求の範囲第1
項記載の密着形イメージセンサ。
(3) Claim 1, characterized in that the transparent protective film is movable relative to the photoelectric conversion element.
Close-contact image sensor as described in .
(4)透明保護フィルムには原稿の照明領域を制限する
ための原稿遮光膜と照明窓が設けられていることを特徴
とする特許請求の範囲第1項記載の密着形イメージセン
サ。
(4) The contact type image sensor according to claim 1, wherein the transparent protective film is provided with an original light-shielding film and an illumination window for limiting the illumination area of the original.
(5)透明保護フィルムの原稿と接する側には、フィル
ム保護膜が設けてあることを特徴とする特許請求の範囲
第1項記載の密着形イメージセンサ。
(5) The contact type image sensor according to claim 1, wherein a film protective film is provided on the side of the transparent protective film that comes into contact with the original.
(6)光電変換素子は水素化非晶質シリコンから成るこ
とを特徴とする特許請求の範囲第1項記載の密着形イメ
ージセンサ。
(6) The contact image sensor according to claim 1, wherein the photoelectric conversion element is made of hydrogenated amorphous silicon.
(7)光電変換素子上には透明保護膜が設けてあること
を特徴とする特許請求の範囲第1項記載の密着形イメー
ジセンサ。
(7) The contact type image sensor according to claim 1, wherein a transparent protective film is provided on the photoelectric conversion element.
(8)透明基板上に金属から成る遮光膜とさらに透明絶
縁膜を設け、その上に光電変換素子が設けてあることを
特徴とする特許請求の範囲第1項記載の密着形イメージ
センサ。
(8) A contact image sensor according to claim 1, characterized in that a light-shielding film made of metal and a transparent insulating film are provided on a transparent substrate, and a photoelectric conversion element is provided thereon.
(9)透明保護フィルムと光電変換素子との間には摩擦
を少なくするための透明潤滑剤が介在していることを特
徴とする特許請求の範囲第1項記載の密着形イメージセ
ンサ。
(9) The contact type image sensor according to claim 1, wherein a transparent lubricant is interposed between the transparent protective film and the photoelectric conversion element to reduce friction.
JP16337784A 1984-08-02 1984-08-02 Close adhesion type image sensor Pending JPS6141268A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16337784A JPS6141268A (en) 1984-08-02 1984-08-02 Close adhesion type image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16337784A JPS6141268A (en) 1984-08-02 1984-08-02 Close adhesion type image sensor

Publications (1)

Publication Number Publication Date
JPS6141268A true JPS6141268A (en) 1986-02-27

Family

ID=15772723

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16337784A Pending JPS6141268A (en) 1984-08-02 1984-08-02 Close adhesion type image sensor

Country Status (1)

Country Link
JP (1) JPS6141268A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4940888A (en) * 1988-03-14 1990-07-10 Hitachi, Ltd. Direct-contact-type image sensor and image sensor assembly
US5162644A (en) * 1988-03-14 1992-11-10 Hitachi, Ltd. Contact type image sensor having photoelectric conversion elements to reduce signal variation caused by luminous intensity variation of light source

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4940888A (en) * 1988-03-14 1990-07-10 Hitachi, Ltd. Direct-contact-type image sensor and image sensor assembly
US4977313A (en) * 1988-03-14 1990-12-11 Hitachi, Ltd. Facsimile equipment with direct-contact-type image sensor
US5162644A (en) * 1988-03-14 1992-11-10 Hitachi, Ltd. Contact type image sensor having photoelectric conversion elements to reduce signal variation caused by luminous intensity variation of light source

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