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JPS6097385A - Thin film transistor substrate for liquid crystal display - Google Patents

Thin film transistor substrate for liquid crystal display

Info

Publication number
JPS6097385A
JPS6097385A JP58205287A JP20528783A JPS6097385A JP S6097385 A JPS6097385 A JP S6097385A JP 58205287 A JP58205287 A JP 58205287A JP 20528783 A JP20528783 A JP 20528783A JP S6097385 A JPS6097385 A JP S6097385A
Authority
JP
Japan
Prior art keywords
liquid crystal
thin film
crystal display
electrode
film transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58205287A
Other languages
Japanese (ja)
Inventor
新保 雅文
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP58205287A priority Critical patent/JPS6097385A/en
Publication of JPS6097385A publication Critical patent/JPS6097385A/en
Pending legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 本発明は、液晶を挾持した画像表示装置の一方の基板と
しての薄膜トランジスタ基板に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a thin film transistor substrate used as one substrate of an image display device holding a liquid crystal therebetween.

非晶質シリコン(Fl−81)等を用いた薄膜トランジ
スタ(TPT)は大面積でしかも低温で製造できるため
、ガラス基板を用いた安価な液晶表示装置に最適である
。TPTをマトリックス状に配した表示装置は、1例と
して第1図(b)にその単位画素部を示す。第1図(a
)には、その等価回路が示さ 、れる。単位画素は、T
PT5、液晶3、対向電極4よシ成シ、電荷保持用容量
6がTPTのドレイン62と共通電極61との間に組み
こまれている。
Thin film transistors (TPTs) using amorphous silicon (Fl-81) or the like have a large area and can be manufactured at low temperatures, making them ideal for inexpensive liquid crystal display devices using glass substrates. As an example of a display device in which TPTs are arranged in a matrix, a unit pixel portion thereof is shown in FIG. 1(b). Figure 1 (a
) shows its equivalent circuit. The unit pixel is T
In addition to the PT 5, the liquid crystal 3, and the counter electrode 4, a charge holding capacitor 6 is incorporated between the drain 62 of the TPT and the common electrode 61.

この容量6はTPTのリーク電流や、ゲート・ドレイン
容量の存在による電圧のレベルシフ)K対する信号電圧
の保持のため大切で、通常数prO値金有す。対向電極
4は酸化インジウム・スズ(ITO)等の明導電膜から
成りガラス板2−ヒに形成され、TPT5及び容量6は
他方のガラス基板1上に形成されている。後者を薄膜ト
ランジスタ基板(TPT基板)と呼ぶことにする。この
TPT基板は第1図(b)の様に、ガラス基板1.−ヒ
に構成されるTFT5と容量6よ構成υ、Tll’T6
はゲート電極52(Xライン)、ソース電極51(Xラ
イン)、8−81膜53、ドレイン電極54、ゲート絶
縁膜55からg#)、容量6は共通゛電極61、絶縁膜
63、表示電極62から成っている。
This capacitor 6 is important for maintaining the signal voltage with respect to TPT leakage current and voltage level shift (voltage level shift) due to the presence of gate-drain capacitance, and usually has a value of several prO. The counter electrode 4 is made of a bright conductive film such as indium tin oxide (ITO) and is formed on the glass plate 2-A, and the TPT 5 and the capacitor 6 are formed on the other glass substrate 1. The latter will be referred to as a thin film transistor substrate (TPT substrate). As shown in FIG. 1(b), this TPT substrate consists of a glass substrate 1. - TFT5 and capacitance 6 are configured υ, Tll'T6
are gate electrode 52 (X line), source electrode 51 (X line), 8-81 film 53, drain electrode 54, gate insulating film 55 to g#), capacitor 6 is common electrode 61, insulating film 63, display electrode It consists of 62.

表示電極62は透過型液晶表示の場合、ITO等の透明
導電膜が用いられ、ドレイン電極54が結線されている
。透過型液晶表示のときには、共通電極61も透明導電
膜が用いられる。反射型の場合には、両電極共に透明で
ある必要はない。通常ゲート絶縁膜55、絶縁膜63に
はプラズマ0VD等による5102膜が用いられている
。しかしながら、基板1として安価なソーダガラス等ア
ルカリ金属を含むガラスを用いると、製造工程中にアル
カリ金属が810?膜中やa−81膜中に入ったりして
TPTの特性に影響を及はし、初期特性と共に信頼性に
問題を生じている。
In the case of a transmission type liquid crystal display, the display electrode 62 is made of a transparent conductive film such as ITO, and is connected to the drain electrode 54 . In the case of a transmission type liquid crystal display, a transparent conductive film is also used for the common electrode 61. In the case of a reflective type, both electrodes do not need to be transparent. Normally, a 5102 film formed by plasma 0VD or the like is used for the gate insulating film 55 and the insulating film 63. However, if a glass containing an alkali metal, such as an inexpensive soda glass, is used as the substrate 1, 810? It enters into the film or the A-81 film and affects the characteristics of TPT, causing problems in initial characteristics and reliability.

本発明は親王の問題点を解決するためになされたもので
、ガラス基板からのアルカリ金属の拡散を阻止するシリ
コン窒化膜を利用する。本発明では特に、この7リコン
窒化膜を画素内の容量形成に用い、特別な工程増加を必
要としない利点をも有する。
The present invention was made to solve the problem of Shino, and utilizes a silicon nitride film that prevents the diffusion of alkali metal from the glass substrate. In particular, the present invention uses this 7-licon nitride film to form a capacitance within a pixel, and has the advantage of not requiring any additional special steps.

以下に図面を用いて本発明を詳述する。第2図は本発明
の1笑施例に基いた単位画素の断面図を示す。アルカリ
金属を含むガラス基板1上には、共通電極61が直接形
成され、これらの表面を窒化膜56が被っている。表示
電極62は窒化膜56゜ゲート絶縁膜55を介して共通
電極62上に配され、容量6全形成している。TFT5
は窒化膜62上にゲート電極52、ゲート絶縁膜55、
a−81膜55、ソース電極51、ドレイ/電極54に
よって形成される。この構造によれば、TFT5は基板
1と窒化膜56によって分離されているので、基板1の
含有物の影響を受けにくい。この窒化膜56の厚みは、
容量6の値によってきめられるが、典型的にはcL1〜
05μmであり、P +! V Dや光OVDによって
堆積される。
The present invention will be explained in detail below using the drawings. FIG. 2 shows a cross-sectional view of a unit pixel based on one embodiment of the present invention. A common electrode 61 is directly formed on the glass substrate 1 containing alkali metal, and a nitride film 56 covers the surfaces thereof. The display electrode 62 is disposed on the common electrode 62 via the nitride film 56° and the gate insulating film 55, forming the entire capacitor 6. TFT5
On the nitride film 62, a gate electrode 52, a gate insulating film 55,
It is formed by the a-81 film 55, the source electrode 51, and the drain/electrode 54. According to this structure, the TFT 5 is separated from the substrate 1 by the nitride film 56, so that it is less susceptible to the effects of substances contained in the substrate 1. The thickness of this nitride film 56 is
It is determined by the value of capacitance 6, but typically cL1 ~
05 μm and P +! Deposited by VD or optical OVD.

第5図は、本発明の他の実施例による単位画素の断面図
である。この例では、ガラス基板1をコートする窒化膜
56はTFT5のゲート絶縁膜の一部として働くと共に
、容量6のための絶縁膜としても役割を果たしている。
FIG. 5 is a cross-sectional view of a unit pixel according to another embodiment of the present invention. In this example, the nitride film 56 coating the glass substrate 1 functions as part of the gate insulating film of the TFT 5 and also plays a role as an insulating film for the capacitor 6.

基板1上に直接形成されたゲート電極52、共通電極6
1はたとえアルカリ金属に汚染されても問題なく、窒化
膜56上の酸化膜55やa−Bi膜53はその影響が少
ない。
Gate electrode 52 and common electrode 6 formed directly on substrate 1
No. 1 has no problem even if it is contaminated with alkali metal, and the oxide film 55 and the a-Bi film 53 on the nitride film 56 are less affected by this.

以上、a−8iTFTを例に説明してきたが、他の構造
材料のTPTにおいても、p−8iTFT。
Although the a-8i TFT has been explained above as an example, the p-8i TFT can also be used in TPTs made of other structural materials.

ビームアニール等で結晶化した半導体薄膜を用いたTP
Tについても本発明は適用される。共通・電極61及び
表示電極62に透明導電膜(例えば工TOやs n O
t )を用いれば、透過型液晶表示装置として、両電極
の少なくとも一方を金属等で不透明にすれば反射型とし
て本基板は用いることができる。
TP using a semiconductor thin film crystallized by beam annealing etc.
The present invention is also applicable to T. The common electrode 61 and the display electrode 62 are covered with a transparent conductive film (for example, TO or SNO).
t), the present substrate can be used as a transmissive liquid crystal display device, and if at least one of both electrodes is made opaque with metal or the like, the present substrate can be used as a reflective type liquid crystal display device.

【図面の簡単な説明】[Brief explanation of drawings]

第1図(a)及び第1図(b)は従来の液晶表示装置用
TPTマトリックスアレイの単位画素の等価回路図と断
面構造例を示す図であυ、第2図及び第5図はそれぞれ
本発明による単位画素の断面構造例を示すしjである。 1・・・基板、2・・・対向基板、3・・・液晶、4・
・・対向電極、5・・・TFT、6・・・容量、61・
・・共通電極、62・・・表示電極、56川窒化膜、5
5・・・ゲート絶縁膜。 以上 出願人 セイコー市子工業株式会社 代理人 弁理士 最 上 荀 第1図co) 第1図(I)) 〜、2 5 b 第2図 6を 第3図
Figures 1(a) and 1(b) are diagrams showing an equivalent circuit diagram and an example of the cross-sectional structure of a unit pixel of a conventional TPT matrix array for a liquid crystal display device. 1 shows an example of the cross-sectional structure of a unit pixel according to the present invention. 1...Substrate, 2...Counter substrate, 3...Liquid crystal, 4...
...Counter electrode, 5...TFT, 6...Capacitance, 61.
...Common electrode, 62...Display electrode, 56 River nitride film, 5
5...Gate insulating film. Applicant Seiko Ichiko Kogyo Co., Ltd. Agent Patent Attorney Mogami Xun Figure 1 co) Figure 1 (I) ~, 25 b Figure 2 6 to Figure 3

Claims (1)

【特許請求の範囲】[Claims] (1)薄膜トランジスタと該トランジスタのドレインに
接続された表示電極と、該表示電極と容量を形成する共
通電極とから成る画素をマトリックス状に配した液晶表
示用薄膜トランジスタ基板において、前記共通電極はア
ルカリ金属を含むガラス基板上に直接形成され、前記共
通電極上には少なく共シリコン窒化膜を一部に含む絶縁
膜が設けられ、該絶縁膜上に前記表示電極と少なくとも
前記トランジスタの半導体薄膜領域が形成されている仁
とを特徴とする液晶表示用薄膜トランジスタ基板。
(1) In a thin film transistor substrate for a liquid crystal display, in which pixels are arranged in a matrix, each consisting of a thin film transistor, a display electrode connected to the drain of the transistor, and a common electrode forming a capacitance with the display electrode, the common electrode is made of an alkali metal. an insulating film partially containing at least a silicon nitride film is provided on the common electrode, and the display electrode and at least the semiconductor thin film region of the transistor are formed on the insulating film. A thin film transistor substrate for liquid crystal display, characterized by:
JP58205287A 1983-11-01 1983-11-01 Thin film transistor substrate for liquid crystal display Pending JPS6097385A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58205287A JPS6097385A (en) 1983-11-01 1983-11-01 Thin film transistor substrate for liquid crystal display

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58205287A JPS6097385A (en) 1983-11-01 1983-11-01 Thin film transistor substrate for liquid crystal display

Publications (1)

Publication Number Publication Date
JPS6097385A true JPS6097385A (en) 1985-05-31

Family

ID=16504473

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58205287A Pending JPS6097385A (en) 1983-11-01 1983-11-01 Thin film transistor substrate for liquid crystal display

Country Status (1)

Country Link
JP (1) JPS6097385A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61184517A (en) * 1985-02-12 1986-08-18 Sharp Corp Thin film element
JPH0210333A (en) * 1988-06-29 1990-01-16 Sharp Corp Active liquid crystal display device
JPH0339935A (en) * 1989-07-07 1991-02-20 Toshiba Corp Liquid crystal display device
JPH04265945A (en) * 1991-02-21 1992-09-22 Sharp Corp Active matrix substrate

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5638095A (en) * 1979-09-06 1981-04-13 Canon Kk Display cell
JPS58164268A (en) * 1982-03-25 1983-09-29 Seiko Epson Corp Thin film silicon transistor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5638095A (en) * 1979-09-06 1981-04-13 Canon Kk Display cell
JPS58164268A (en) * 1982-03-25 1983-09-29 Seiko Epson Corp Thin film silicon transistor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61184517A (en) * 1985-02-12 1986-08-18 Sharp Corp Thin film element
JPH0580651B2 (en) * 1985-02-12 1993-11-09 Sharp Kk
JPH0210333A (en) * 1988-06-29 1990-01-16 Sharp Corp Active liquid crystal display device
JPH0339935A (en) * 1989-07-07 1991-02-20 Toshiba Corp Liquid crystal display device
JPH04265945A (en) * 1991-02-21 1992-09-22 Sharp Corp Active matrix substrate

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