JPS6066830A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To prevent the improper avec even if the metal layer on the back surface of a wafer is soft with small size of an element by providing a hard insulating film at the position corresponding to dicing position on the back surface of the wafer. CONSTITUTION:SiO2 films 8, 9 are formed on the front and back surfaces of N<+>N<-> type Si wafer 1, a window is opened only at the film 8 to form a P type layer, thereby forming many elements 2. electrode windows 10 are opened at the films 8, and the film 9 is allowed to selectively remain at the position corresponding to that between the elements 2. Au film 3 is deposited on the front surface, and an Au film 4a and an Ag film 4b are deposited and laminated on the back surface. A bonding tape is bonded and exfoliated, and the Au 3, 4a are selectively removed on the films 8, 9. Further, a bonding tape 5 is bonded to the back surface, it is diced from the front surface to form grooves 6, and 60 8mum are allowed to remain. The wafer 1 is disposed downside, and a rubber plate is placed on the wafer, it is broken at 11 from the bottom of the groove to the film 9 of the back surface by a roller to isolate into elements 2. According to this method, the film 9 can be readily and accurately broken to eliminate the improper avec.

Description

DETAILED DESCRIPTION OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for manufacturing a large number of semiconductor pellets from a semiconductor wafer.

BACKGROUND TECHNOLOGY When manufacturing extra-core devices 1'1 such as transistors, diodes, etc., as shown in FIG. ．．
After fully forming the metal layers 3 and 4 on all four sides, each semiconductor element 2.2 is completely cut and separated, and a large number of semiconductor pellets are manufactured through the entire process. Here, the metal layer 3 between -1ζ
Is it independent for each semiconductor element 2, or is it independent for each semiconductor element 2?
are uniformly formed and often form a series Ji+i:. In addition, when there is no connection between the semiconductor elements 2, 2, the dyne leg method is generally used. However, if the metal layer 4 between the layers is made of 11-metal material such as silver, when you try to make a complete/1z cut with a cutting saw, the soft silver will clog the cutting blade, causing the cutting blade to be cut. Become incapacitated. As shown in Figure 2,
Apply all ωJvc adhesive tape 5 to the back of the semiconductor wafer.
After forming the entire dicing groove 6 with a predetermined remaining thickness tk from tj, the semiconductor wafer l is given a bending force, and the 'i'-conductor pellet is Manufactured. However, semiconductor girls 2 +/
) With dimensions smaller than l as'', it is impossible to apply a large bending effect to the semiconductor wafer l, and because 'i 4 is 1 barred in the metal on the back [1'lJ] However, the braking could not be properly performed, and the semiconductor pellets that had fallen into the bale became connected by the metal layer 4. So-called Abek failure occurred [~] easily.

';C':+υ■1. II
It is assumed that t=II''J provides a method for manufacturing a semiconductor device which does not cause problems even when the <1> group A'Z of + is made of a soft conductive material of silver foil.

1'4if;Ni U) 51': Ming Q Yu, semiconductor wafer il'c multi-liquid semiconductor device? Is there an insulation layer at a position corresponding to the forming process and between the IS half-solid elements on the back side of the semiconductor wafer? 1) IJ recording aid on the back side of the semiconductor wafer
Bottom+1 where the entire soft metal layer is formed except for the II/super I component part
+1 and 'l'34;ff4<way...The process of irradiating the entire insulating film from the position where 'AI'I+j;
c'・ru.

〔effect〕

This invention has a hard insulating film 7 on the back surface of the semiconductor wafer at a position corresponding to the die jig.
The insulating film will definitely break, and even if it is completely cut using the full dicing method, the I3 clogging of Guissinkfred will occur.

The following is a detailed description of 11 forms for carrying out the entire invention.
('.

I will clarify.

4 to 9 do not show cross-sectional views of the semiconductor wafer at each stage of the method according to the invention.

First, prepare a + I + N - semiconductor unit S l 'fc, and coat both the front and back sides with insulating films 8, 9 such as
Fully formed, flower A on the surface side, ',! +1st place, window 3'1 only for 3. By forming a pure 1 (?riwo・i) class III < 118 and forming in the P type region, the P type is formed in the N- type region, resulting in a multi-liquid ``1'1 experience''. 2? form (fourth
Figure 9゜Next, the table +
All holes 10 for ohmic contact are formed in the 1+1ttll film 8, and the entire insulating film 9 on the back side is left only at the position corresponding to each of the semiconductors 7□F2 and 2 (Figure 5)0 Subsequently, r included on the insulating film 8 and in the confusion 10 in Table 10
i=+1+ノl'c 8-all vaporized A"4 to form metal layer 3 &c,, 9↓minσ,) Insulation j All-vaporized gold layer is formed on the entire surface including the upper surface 4 a 2 II seasoning,
Furthermore, silver is added on this pot layer 4a by 7/> y7j L and i
Long tide 41) Metal j・;・1 by all Ii
4 Complete all the steps (Figure 6).

Next, by pasting adhesive tape on both the front and back sides of the rl' conductor wafer 1 and then peeling it off, the metals 1, 3, and 4. L silicon and insulating film 8,
1, 1 on 9.・、ノ■のの´＜ ”5− A:I
I If l-, 1tr+ r* la 8-
Q l σ]4 Takashi B b2i3 and gold layer 4ak peeled off, insulating film 8σ): hole 10 and insulating films 9, 9
In the middle part, 〈12 kJ', l stomach 3''S and 4 are completely formed (Fig. 7) 1, the semiconductor wafer, and the back of \1 [river ('C]metsu?
, from the i-day 15 complete pasting (JKET/Table JJ "I) side, dicing grooves 6 between each semiconductor element f2 and 2 &lS? are formed with a remaining thickness of about 60 to 801" (8th
1 sentence 1).

This semiconductor wafer 1 and
c1, m N tape 5 -I- to %'li low crawler) fully rolled,) 1' Korean body one, L-ha]
The bending is perfect for 1'β, and the dicing rf<f 6
(/R?ls to SOJ 1fllσ) A rupture is caused across the insulating film 9, and 1 to 1F is generated for each valley 1' of the conductor hexagon 2 (FIG. 9).

” According to the manufacturing method described in 2, dicing L: l'j
Since a hard insulating film 9 is formed on the back surface corresponding to 6, the insulating film 9 is easily and reliably broken during braking, and no abnormality occurs.

In addition, the embodiment described in ``-'' describes the case where the entire semiconductor layer 9 is provided with a predetermined remaining space, and the insulating film 9 'L
II': JJ may be completely canted with λ-. In this case, since the insulating film 9 is made of historical material, the cutting saw can be easily and reliably completely cut without clogging.

[Brief explanation of the drawing]

1 to 3 are cross-sectional views of a semiconductor device at each stage of the conventional method. Figures 4 to 9 illustrate the method using this light 1iJI. ＋ of semiconductor wafers at each stage of lJJ
= IT is in my blood. ]-...14 conductor wafer, 2-! 1'-conductor element, 3.4... layer, 5 contact 11 tape, 6--dying (flj), 8.9- 4-layer film,

Claims (1)

[Claims] ``-To form a large number of cylindrical elements on a semiconductor wafer--about half a minute! ! forming an insulating film on the back surface of the 7-body wafer at positions corresponding to each half of the 4-body wafer; and forming 11 high-quality metal layers on the back side 111j of the 7-body wafer except for the insulating film forming portion. A method for manufacturing a semiconductor device including a process of die-song a semiconductor wafer from 1'u to 1'u to form an insulating film. : A method for manufacturing a semiconductor device according to Item 1 of the '11 Ilj Request for 15 Floods.