JPS6059354A - Electrophotographic sensitive body - Google Patents

Abstract

PURPOSE:To improve sensitivity to the light of a specified long wavelength by using a specified kind of phthalocyanine for an electrostatic charge generating material. CONSTITUTION:A charge generating layer formed on a conductive substrate contains gallium phthalocyanine represented by the formula shown here in which Me is gallium (Ga) and X is iodine. It is synthesized by reacting o-phthalodinitrile with gallium iodide in quinoline under reflux, and it is vapor deposited to a glass substrate. It has light absorption in >=800nm, and a charge transfer layer contg. polyvinyl carbazol or the like is formed on this charge generating layer thus obtained. The functionally separated photosensitive body thus prepared is suitable to semiconductor laser beams and high output Si-doped IR LED rays.

Description

Detailed Description of the Invention (Technical Field) The present invention relates to an electrophotographic photoreceptor, particularly
The present invention aims to provide a photoreceptor that is highly sensitive to long wavelength light of 00 nm or more and has excellent specific characteristics.

(Prior Art) As shown in FIG. 1, a conventional photoreceptor is one in which a selenium (Se) film 12 is formed on a conductive substrate 11 made of aluminum or the like by vacuum evaporation. The spectral sensitivity of this Sc photoreceptor decreases rapidly at wavelengths of 500 nm or more, as shown by track 841 in FIG. Note that the reciprocal of the exposure amount required to increase IK of the initial potential by 2 minutes was used as the sensitivity value. The definition of sensitivity is the same below.

There is also a 5e-Te alloy photoreceptor in which SeK tellurium (Te) is added to extend the spectral sensitivity to long wavelengths. However, this 5
As the amount of Te added to an e-Te photoreceptor increases, its surface charge retention properties become poorer, and it cannot be practically used as a photoreceptor. Therefore, as another example, as shown in FIG. 2, a Se layer 22 of about 50 μm is provided on the conductive substrate 2,
There is a two-layer type in which a 5e-Te alloy layer 23 with a thickness of 2 to 3 μm is formed thereon to improve charge retention characteristics. When this surface layer is 5e85Te15, the spectral sensitivity decreases rapidly above 650 nm, as shown by curve 42 in FIG.
If the wavelength is 0.00 nm or more, the sensitivity decreases to such an extent that it becomes virtually unusable.

Furthermore, as shown in FIG. 3, a charge generation layer 32 is formed by coating the soil of the conductive substrate 31 with chlorodia ampulus or a nucouarylic acid derivative, and this soil is coated with polyvinylcarbazole or pyrazoline, which has a high insulation resistance in the dark. There is a two-layer functionally separated photoreceptor in which a charge transport layer 33 is formed by coating a mixture of a derivative and a polycarbonate resin. Although these photoreceptors have sufficiently high sensitivity to visible light, they cannot be used as photoreceptors to irradiated light of 650 nm or more.

On the other hand, attempts have been made to use a semiconductor laser as a light source in laser beam printers that use laser light as a light source and an electrophotographic photoreceptor, and the oscillation wavelength of this light source is 8.
00 to 850 nm is common. Further, in an electrophotographic printer using an S1-doped high-output infrared LED as a light source, the emission wavelength of this light source is 920 to 950 nm.

However, at present, almost no photoreceptor has been found that exhibits high sensitivity to light of 800 nm or more. So 800
There is a demand for photoreceptors that are highly sensitive to long wavelength light of nm or longer.

(Object of the Invention) Each of the present invention provides an electrophotographic photoreceptor in which a charge generation layer made of an organic conductive substance is formed on a conductive support, wherein the charge generation layer is formed by the general formula (wherein Me is gallium Ga, is iodine I).

Hereinafter, this invention will be explained in detail with reference to Examples.

(Example) In the example of the present invention, firstly, orthophtha-day nonitrolyl 1
Gallium iodide (GaT) with a purity of 99.999%
s) 100 ml of quinoline in a flask with 10 F
and reacted for 60 minutes under reflux to synthesize GalPc. As a result of elemental analysis of this product, the elemental ratio is C32H15,2N7.6 ■0.8GaO,9, and one I is bonded to the central metal, which is approximately C32H1
It was confirmed that it was a phthalocyanine with an elemental ratio of 6N8*1Ga1.

The GalPc synthesized and purified in this way was placed in an aluminum crucible in a vacuum evaporation apparatus, and the crucible temperature was 5.
A thin film was formed on a glass plate by a resistance heating vapor deposition method at 00°C. The film thickness formed at this time was 0.02 μm. 600-900 n of the thin film sample made from this GalPc
The optical absorption spectrum for m was measured using a self-recording spectrophotometer. The results are shown in FIG. Among the curves in FIG. 5, No. 5 is a spectrum obtained when this sample was not treated with anything, and showed a flat maximum peak at 730 to 770 nmK.

When this sample was further exposed to tetrahydrofuran (THF) vapor for 20 hours, the absorption peak shifted to longer wavelengths, ie, to 980 nm, as shown by curve 52.

Next, as shown in FIG. 6, a charge generation layer 62 with a thickness of 02 μm was formed on the conductive substrate 6 using a resistance heating evaporation method using GalPc, and after exposing this to THF vapor for 20 hours, it was dissolved in THF. Coating polyvinyl carbazole resin and thoroughly drying THF to form a charge transport layer 63 with a thickness of 8 μm.
A photoreceptor was prepared by forming the film to a certain thickness.

The results of measuring the spectral sensitivity, which is an electrophotographic characteristic of this photoreceptor, are shown by curve 7 in FIG.

As shown by curve 7 in FIG.
, and even at 950 r+m, 1.1 cm2/μJ
A very high sensitivity, which is currently unknown, was observed. 800-8, which is the wavelength of general semiconductor laser light
At 50 nm, it showed a high sensitivity of 1.1 to 1.3 tyn2/μJ.

(Effects of the Invention) As explained above, the photoreceptor of the present invention is not only sensitive to wavelengths of 800 nm or more, but also has a charge generation layer of 0.2 nm or more.
Since a very thin film on the order of μ-full is sufficient, the time required to use a vacuum device is short, and the photoreceptor can be easily produced and mass-produced at low cost. Furthermore, since the material is organic, it is easy to dispose of. Further, the photoreceptor of the present invention can be applied not only to laser printers, but also to facsimile machines or printers using LEDs as light sources, particularly other recording devices and optical sensors using semiconductor lasers as light sources.

[Brief explanation of the drawing]

Figure 1 is a cross-sectional view of a conventional Se photoreceptor, and Figure 2 is a cross-sectional view of a conventional Se photoreceptor.
e, sectional view of a 5e-Te alloy two-layer type photoreceptor, Fig. 3 is a sectional view of a conventional function-separated type electrophotographic photoreceptor, Fig. 4 is a spectral sensitivity curve diagram of the photoreceptor, Fig. Figure 5 is a light absorption spectrum diagram of the 7 talocyanine pigment used in the present invention,
FIG. 6 is a sectional view of the photoreceptor of the invention, and FIG. 7 is a spectral sensitivity curve diagram of the photoreceptor of the invention. 31.6'l... Conductive substrate, 32.62... Charge generation layer, 33.63... Charge transport layer, 41... Spectral sensitivity curve of Se photoreceptor, 42... Re, 5e- Spectral sensitivity curve of Te alloy two-layer photoreceptor, 51... Light absorption spectrum of untreated sample, 52... Light absorption spectrum of THF solvent vapor treated sample, 7... Spectrum of photoreceptor of Example sensitivity. Patent applicant Oki Electric Industry Co., Ltd. Figure 1 Figure 6 Figure 4 400 5QQ 600 700 Irradiation ninth wavelength (nm) Procedural amendment (method) 1. Indication of the case 1982 Patent Application No. 166770 2 Name of the invention Photoreceptor for electrophotography 3 Person making the amendment Relationship to the case Patent applicant's office (105) 1-7 Toranomon, Minato-ku, Tokyo 12
Address (105) 1-7-1 Toranomon, Minato-ku, Tokyo
No. 2 No. 5, Date of amendment order January 31, 1980 (shipment date) 6. Subject of amendment "Claims" of the specification and [
Invention 7, Contents of amendment (1) The "Claims" column from line 4 to line 16 of page 1 of the specification is written as shown in the attached sheet. (No change in content) (2) Full text of page 4 of the same page (from "Showing photoreceptor..." to "・
(hereinafter up to GalPc J) are printed as per the attached sheet. (
(No change in content) 2. Claims: An electrophotographic photoreceptor in which a charge generation layer made of an organic photoconductive substance is formed on a conductive support, wherein the charge generation layer has the general formula (wherein Me is gallium). 1. A photoreceptor for electrophotography, characterized in that it uses gallium phthalo/anine represented by (Ga, X is iodine I). (Full text of Specification Box 4) Very few photoreceptors have been found. So 8
There is a demand for a photoreceptor that is highly sensitive to long wavelength light of 00 nm or more. (Object of the Invention) An object of the present invention is to provide an electrophotographic photoreceptor that is sensitive to wavelengths of 800 nm or more. (Structure of the Invention) The present invention provides an electrophotographic photoreceptor in which a charge generation layer made of an organic photoconductive substance is formed on a conductive support, wherein the charge generation layer has the general formula

Claims (1)

[Scope of Claims] In an electrophotographic photoreceptor in which a charge generation layer made of an organic photoconductive substance is formed on a conductive support, the charge generation layer is formed by the general formula (where Me is gallium and a). , X is iodine).