JPS6046525A - Active matrix panel with built-in drive circuit - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an active matrix liquid crystal panel, and particularly to an active matrix liquid crystal panel comprising a transparent substrate incorporating a drive circuit such as a shift register.

In recent years, active matrix panels in which a switching transistor array is formed on a single crystal silicon substrate or a transparent substrate have been developed and are being put into practical use. A conventional active matrix panel, particularly a transparent active matrix panel using thin film transistors, has an active matrix substrate 101 on which a switching transistor array 104 is formed, as shown in FIG. 1(α). Counter electrode 10
3, and a liquid crystal 102 sealed between the active matrix substrate 101 and the counter electrode 106, and all drive circuits such as shift registers were formed outside the active matrix panel. Usually, an active matrix substrate intended for image display has M gate lines i, 05, M as shown in Fig. 1 (Ch).
Book data line 106 and MX11 pixels 107, 108, 109, 110 . . . formed at their intersections.・
..., and the number of gate lines M is 200 to 2.
50 bottles.

The number N of data lines is about 100 to 250 lines. Therefore, an active matrix panel has at least M+
N input terminals are required, and the same number of connections to external drive circuits are also required. Therefore, according to the conventional method, the volume occupied by the connection portion between the active matrix panel and the external drive circuit becomes large, which hinders miniaturization and thinning of one panel unit. Furthermore, the cost of the panel unit increases due to the chip cost and mounting cost of the LSI for the external drive circuit.

An object of the present invention is to eliminate the drawbacks of conventional thin film active matrix panels as described above, and to provide a small, thin, and inexpensive active matrix panel with a built-in drive circuit using thin film transistors. Furthermore, it is an object of the present invention to eliminate the complication of the manufacturing process due to the built-in drive circuit, and to incorporate the drive circuit manufactured in the completely same process as the pixel array part into the active matrix substrate. .

Hereinafter, the features, configuration, and operation of the present invention will be explained in detail based on Examples.

FIG. 2 (α) shows an example of the configuration of an active matrix panel with a built-in drive circuit according to the present invention. In the same figure, G1
．． G2. G3. . . . GM is a gate line, the number of which is M, and DI, D2 . D5,...,D
N is a data line, the number of which is M. Also, 201.
202, 203. :204 etc. are thin film transistors (hereinafter referred to as thin film transistors) as shown in Figure 2Cb).
It is abbreviated as PT. ) 251, a liquid crystal container M252, etc., and the pixels are arranged in a matrix to form the display section 2.
05 is formed. 206 and 207 are drive circuits formed on the active matrix substrate 208.

Reference numeral 206 denotes a gate AT drive circuit, and a specific example of the circuit configuration thereof is shown in FIG. 3(α) and FIG. 3Cb). Figure 6 (
α) is a dynamic shift register that includes only P-type TFTs or only N-type TFTs, and in the figure, 301.502 is a clock line, 303 is a line that provides a common potential, and 304, 305, 306, 307
, 308 are TPTs of the same polarity. It's a voice,
308 operates as an MO8 capacitor whose source and drain are connected. Fig. 3 (Ch) shows a complementary dynamic shift register, in which 311 and 312 indicate a clock line, and 313 indicates a data input terminal. Also,
P W T I' T 314 and N-type TFT 315 form a complementary analog switch, and 316 is a complementary inverter. On the other hand, in FIG. 2, 207 is a data line drive circuit, and a specific example of its circuit configuration is shown in FIG.
) and Ch) in the same figure. The data line drive circuit includes a shift register and an analog switch, and samples and holds the video signal. Figure 4 (α) + [1tl-t
This is a dynamic shift register composed of i-type TIFTs. In the figure, 401 and 402 are clock lines, 403 is a data input terminal, 404 is a line that provides a common potential, 405, 406, and 407 are video signal lines, and 408 ,409.410,411.412
are TPTs of the same polarity. Here, the ZFT411 operates as a MOB capacitor whose source and drain are connected,
TFT 412 operates as an analog switch. Fourth
Figure Cb) consists of a complementary dynamic shift register and a complementary analog switch. In the same figure, 421
．． 422 is a clock line, 423 is a data input terminal,
424, 425 and 426 are video signal lines. P
Type T Il"T 427 and N type TFT 428 form a complementary analog switch, 429 and 430 are complementary inverters, and P type TFT 431 and N type TFT 45
2 to form a sample and hold analog switch.As mentioned above, the first feature of the present invention is that the drive circuit is built into the active matrix board as a thin i% product circuit. A second feature is that all wiring within the thin film integrated circuit is formed using a silicon thin film and a transparent conductive film, such as 'xT O (indium tin oxide). Figure 5 shows the layout
P? In addition to silicon thin films and transparent conductive films, metals are used as j.
1 is a diagram showing an example of the structure of a thin film integrated circuit using, for example, an aluminum alloy. In the figure, 501 is an insulating substrate, 502 is a first silicon film doped with impurities,
503 is a first silicon thin film that is not doped with impurities or is doped with impurities of the opposite polarity to 502, 504 is a gate oxide film, 505 is a second silicon thin film that is doped with impurities, and TPT is provided in the portion 512. It is formed. 506 is a first interlayer insulating film, 507 is a first contact hole, 508 is a metal wiring layer, 509 is a second interlayer insulation film that also serves as a protective film for the metal wiring layer, and 510 is a second contact hole. , 511 is a transparent conductive film. The transparent conductive film 511 is a drive electrode that drives the liquid crystal, and is essential for an active matrix panel. Transparent conductive films have superior adhesion to interlayer insulation layers compared to metal layers, and are difficult to manipulate, so they can withstand mechanical alignment processes.
Does not require a protective film. The active matrix panel with a built-in drive circuit of the present invention may be formed with the structure shown in FIG. 5, but by forming it with the structure shown in FIG. 6, it can be manufactured at a lower cost with fewer steps. . In FIG. 6, 601 is an insulating substrate, 602 is a first silicon thin film doped with impurities, 603 is a first silicon thin film that is not doped with impurities or is doped with impurities of opposite polarity to 602, and 604 is a gate oxide film. , 605 is a second silicon thin film doped with impurities, and TPT is formed in a portion 609. 606 is an interlayer insulating film, 60
7 is a contact hole, and 608 is a transparent conductor.

In FIG. 6, a source/drain is formed in the first silicon thin film layer. Further, in the figure, any wiring is formed of a silicon thin film layer or a transparent OA conductive group layer. By forming the active matrix substrate without using metal as shown in FIG. 6, it is possible to reduce costs by shortening the manufacturing process, improve the transmittance of the panel, and improve the contact characteristics between each layer.

(According to the structure shown in FIG. 5, a metal oxide such as AL is formed on the surface of the metal layer.

0 is likely to be formed, and the contact characteristics with the transparent conductive film are not good. ) Although the thin film integrated circuit having the structure shown in Fig. 6 has the above-mentioned advantages, it has the disadvantages of Fig. 3 (α), Ch
) #Figure 4 (α) l (The i clock line, video signal line, and power supply line are also made of silicon N with high sheet resistance.
It has the disadvantage that it must be formed of a transparent conductive film. However, since there is a sufficiently wide wiring space around the active matrix substrate, it is possible to have a large wiring width on the pattern, and the above-mentioned drawbacks are completely eliminated.

As described above, by applying the present invention, a small, thin, and high-performance active matrix panel with a built-in drive circuit can be obtained through a simple fM manufacturing process. The active matrix panel with a built-in drive circuit thus obtained is expected to be applied to an ultra-small panel unit that can display any image by simply applying a video signal and a synchronization signal.

[Brief explanation of drawings]

FIG. 1(α)lCb) is a diagram for explaining a conventional active matrix panel. Figures 2 (a) and (A) are diagrams for explaining the schematic configuration of the present invention. Figure 3 (α) # ('), Figure 4 (α) I Cb)
, FIG. 5, and FIG. 6 are diagrams for explaining specific embodiments of the present invention. Applicant Suwa Seikosha Co., Ltd. Agent Patent Attorney Tsutomu Mogami (A no (b) G1 G2 G!5 (σ,) (Tono Figure 3)

Claims (1)

[Claims] 1. A drive circuit comprising a plurality of gate lines, a plurality of data lines, a thin film transistor array formed at the intersection of the gate lines and the data lines, and a drive circuit composed of the thin film transistors. Active matrix panel with built-in drive circuit. 2. The source and drain of the thin film transistor are formed of a silicon thin film, and the gate line, data line, and all wiring in the drive circuit are formed of a silicon thin film and a transparent conductive film. An active matrix panel with a built-in drive circuit as described in Scope 1.