JPS6038818A - Electron beam exposing device - Google Patents
Electron beam exposing deviceInfo
- Publication number
- JPS6038818A JPS6038818A JP14691583A JP14691583A JPS6038818A JP S6038818 A JPS6038818 A JP S6038818A JP 14691583 A JP14691583 A JP 14691583A JP 14691583 A JP14691583 A JP 14691583A JP S6038818 A JPS6038818 A JP S6038818A
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- processed
- electron
- irradiate
- foreign substance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electron Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は電子ビームを用いて被処理体上に露光処理を行
なう電子ビーム露光装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an electron beam exposure apparatus that performs exposure processing on an object to be processed using an electron beam.
近年、半導体集積回路パターンの筒密度化微細化および
高梢ルー化に伴ない電子ビーム露光装置が111i用さ
れるようになってきた。In recent years, electron beam exposure apparatuses have come to be used in 111i as semiconductor integrated circuit patterns become denser, finer, and have higher topography.
電子ビーム露光装置を用いたパターン形成方法は、一般
に被処理体上に形成されfc Ib、子ビーム感応レジ
スト上の所望する部分に電子ビームを照射し後工程で行
なわれる現像処理によりPl[望部分を除去することに
よシなされる。A pattern forming method using an electron beam exposure apparatus generally involves irradiating an electron beam onto a desired portion of a fcIb and amplified beam-sensitive resist formed on an object to be processed, and then developing Pl [desired portion This is done by removing the .
ところで電子線を照射する場合、被処理体上の電子線感
応レジスト上に塵埃等の異物が存在すると電子線の照射
部1分が後の沙像工程で除去されるいわゆるポジ型レジ
ストの場合上記異物に照射電子が吸収され、本来柘゛子
線が照射されるべき部分が未照射となシ、後工程の現像
処理で所望しないパターンいわゆるドツトが発生して不
良原因となる。また、電子線の照射部分が後の現像工程
でレジストの残るいわゆるネガ型レジストの場合は、前
記と逆に異物が存在した部分は礼、子線に未照射となり
後工程の現像処理でレジストが除去され、いわゆるピン
ホールが発生して不良原因となる。By the way, when irradiating an electron beam, if there is foreign matter such as dust on the electron beam sensitive resist on the object to be processed, one minute of the electron beam irradiation area will be removed in the subsequent sand imaging process. The irradiated electrons are absorbed by the foreign matter, and the portions that should originally be irradiated with the cylindrical beam are not irradiated, causing an undesired pattern, so-called dots, to occur in the subsequent development process, resulting in defects. In addition, in the case of a so-called negative resist where the part irradiated with the electron beam remains in the later development process, conversely to the above, the part where foreign matter was present will not be irradiated with the electron beam and the resist will be removed in the later development process. This causes so-called pinholes to occur and cause defects.
これらの不良は、例えは重子ビーム座光装4が半導体集
積回路の製造工程で用いられるフォトマスクの製造に用
いられfC場合、電子ビーム結党の終了したフォトマス
クを現像、焼きしめ、エツチング、レジスト剥離等多数
のプロセス処理が完了した後の検査工程で発見される。These defects can be caused by, for example, when the multiplex beam beam assembly 4 is used to manufacture a photomask used in the manufacturing process of semiconductor integrated circuits, and the photomask after electron beam formation is not developed, baked, etched, or resisted. It is discovered during the inspection process after a number of processes such as peeling are completed.
また電子ビーム露光装置が半導体集積回路の製造に直接
用いられる場合つまシラエリ−上のレジストを直接電子
ビームで露光するいわゆる面構装置として用いられる場
合、上記欠陥を発見することは困難であり、電子ビーム
の照射にかかわる異物が多数存在すると、最終的に1枚
のウェハーから取れる半導体集積回路の良品チップ数い
わゆる歩留は著しく低下する。Furthermore, when electron beam exposure equipment is used directly in the manufacture of semiconductor integrated circuits, or as a so-called surface structuring equipment that directly exposes resist on a silica area with electron beams, it is difficult to detect the above defects. If there are a large number of foreign substances involved in beam irradiation, the number of good semiconductor integrated circuit chips that can be finally obtained from one wafer, ie, the yield, will be significantly reduced.
通當半導体集積回路を製造するためには、一枚のウェハ
ーを数回から士数回、レジスト塗布、露光、現像、焼き
しめ、後処理(例えばエツチング、イオン注入、拡散等
の処理)を繰り返し行なう必要があり、多大な工数と工
期を費やすことになるから、前述の如く低い歩留は生産
上大きな支障を生ずる結果となる。特に前述した面構装
置は工期短縮を目的として使用されることが多く、最終
的に半導体集積回路の製造が終了するまで良否の判定が
できない小は、その目的を達する上で大きな不都合とな
っていた。In order to generally manufacture semiconductor integrated circuits, one wafer is subjected to resist coating, exposure, development, baking, and post-processing (e.g. etching, ion implantation, diffusion, etc.) several times to several times. Since this process requires a large amount of man-hours and time, the low yield as described above will result in a major problem in production. In particular, the above-mentioned surface structuring equipment is often used for the purpose of shortening the construction period, and the fact that it is not possible to judge the quality of the semiconductor integrated circuit until the final manufacturing process is completed is a major disadvantage in achieving that purpose. Ta.
本発明の目的は電子ビーム露光が終了した時点で塵埃等
の異物に起因する欠陥の数を認知し、V工程へ進めるか
どうかを判断することにより、工期短縮及び無駄な工数
を削除できる島、子ビーム露光装置を提供するものであ
る。The purpose of the present invention is to recognize the number of defects caused by foreign matter such as dust at the end of electron beam exposure, and to determine whether to proceed to the V process, thereby shortening the construction period and eliminating unnecessary man-hours. A sub-beam exposure device is provided.
すなわち、本発明は、電子銃から生じた電子ビームを制
御し、被処理体上に照射し、露光処理を行なう電子ビー
ム絽光装筒において10.子ビームI(i射時に被処理
体より発生する二次電子な捕捉することにより被処理体
上に存在する異物を検出する機能を僑えた電子ビーム露
光8+fめに関するものである。That is, the present invention provides 10. an electron beam illumination device for controlling an electron beam generated from an electron gun and irradiating it onto a workpiece to perform exposure processing; This relates to electron beam exposure 8+f which has a function of detecting foreign matter present on the object to be processed by capturing secondary electrons generated from the object to be processed when the secondary beam I (i) is irradiated.
以下に本発明の一実施例を図面を用いて詳細に畝1明す
る。第1図は本発明の一実施例であり、電子銃1より生
じfc%子ビーム2は霜1子レンズ3により収束され被
処理体5に達する。偏向磁極4によ!ll電子ビームは
偏向され、被処理体5上の所望もb分が露光される。こ
の時被処理体5上に塵埃等の異物か存在し、そこに石、
子ビーム2が照射された場合辿猟被処理体5上の電子ビ
ームレジストは平坦であるから、発生する二次電子の信
号は異なり、二次w3子検出機6により検出することで
、%;電子ビームの照射にかかわる塵埃の存在をV!識
できる。確認さt1tc塵裟等の異物の数が任意の数(
半導体集95回j’+?iのチップサイズ、必要とする
収量等により異なる)を越えた場合、目的とする収量が
得られないこと社露光終了時点で既知となシ、ここで舵
処理体5の良否を・判定することで後工程へ進めること
によりかかる多大な工数と工期を削減できるわけである
。An embodiment of the present invention will be explained in detail below with reference to the drawings. FIG. 1 shows an embodiment of the present invention, in which an fc% beam 2 generated from an electron gun 1 is converged by a frost single lens 3 and reaches an object 5 to be processed. By deflection magnetic pole 4! The electron beam 11 is deflected, and a desired portion b of the object 5 to be processed is exposed. At this time, there may be foreign matter such as dust on the object 5, and there may be stones, etc.
When the child beam 2 is irradiated, the electron beam resist on the object to be traced and processed 5 is flat, so the generated secondary electron signal is different, and by detecting it with the secondary W3 child detector 6, %; V! The presence of dust related to electron beam irradiation! I can understand. Confirmed t1tc The number of foreign objects such as dust is an arbitrary number (
Semiconductor collection 95th j'+? It is known at the end of the exposure that the desired yield cannot be obtained if the amount exceeds (depending on the chip size of i, the required yield, etc.), and the quality of the rudder processing body 5 is judged here. By proceeding to the subsequent process, a large amount of man-hours and time can be reduced.
以上述べた様に本発明による訃、子ビーム露光装置を用
いねば、111子ビーム露光が完了し、た時に沙処理体
の良否がわがシエ数及び工期の削減が図れる。As described above, by using the secondary beam exposure apparatus according to the present invention, it is possible to complete 111 secondary beam exposures and reduce the number of sheets and construction period, depending on the quality of the processed body.
第1図は電子ビーム露光製すの概略図である。
伺、れ0マーおいて、■・・・・・・を子銃、2・・・
・・・電子ビーム、3・・・・・・を子レンズ、4・・
・・・・伽1向[it、5・・・・・・被処理体、6・
・・・・・二次電子検出様である。FIG. 1 is a schematic diagram of electron beam exposure. Next, leave 0 mars, and place ■... as a child gun, 2...
...electron beam, 3... as child lens, 4...
...Ka1 direction [it, 5... object to be processed, 6.
...This is similar to secondary electron detection.
Claims (1)
し露光処理を行なう電子ビーム露光装備において、電子
ビーム照射時に被処理体よシ発生する二次電子を捕捉す
ることにより被処理体上に存在する異物を検出する機能
を備えfclh:子ビーム露光装置。In electron beam exposure equipment that controls the electron beam generated from an electron gun and irradiates it onto the object to be processed, it is possible to expose the object to the object by capturing the secondary electrons generated by the object during electron beam irradiation. fclh: Child beam exposure device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14691583A JPS6038818A (en) | 1983-08-11 | 1983-08-11 | Electron beam exposing device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14691583A JPS6038818A (en) | 1983-08-11 | 1983-08-11 | Electron beam exposing device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6038818A true JPS6038818A (en) | 1985-02-28 |
Family
ID=15418438
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14691583A Pending JPS6038818A (en) | 1983-08-11 | 1983-08-11 | Electron beam exposing device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6038818A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63318043A (en) * | 1987-06-19 | 1988-12-26 | Mitsubishi Electric Corp | Color drift adjusting method and adjusting device for color cathode-ray tube |
US10350119B2 (en) | 2014-11-06 | 2019-07-16 | The Procter & Gamble Company | Pre-strained laminates and methods for making the same |
-
1983
- 1983-08-11 JP JP14691583A patent/JPS6038818A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63318043A (en) * | 1987-06-19 | 1988-12-26 | Mitsubishi Electric Corp | Color drift adjusting method and adjusting device for color cathode-ray tube |
US10350119B2 (en) | 2014-11-06 | 2019-07-16 | The Procter & Gamble Company | Pre-strained laminates and methods for making the same |
US10357410B2 (en) | 2014-11-06 | 2019-07-23 | The Procter & Gamble Company | Pre-strained laminates and methods for making the same |
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