JPS60262475A - Photo-coupler - Google Patents
Photo-couplerInfo
- Publication number
- JPS60262475A JPS60262475A JP59118425A JP11842584A JPS60262475A JP S60262475 A JPS60262475 A JP S60262475A JP 59118425 A JP59118425 A JP 59118425A JP 11842584 A JP11842584 A JP 11842584A JP S60262475 A JPS60262475 A JP S60262475A
- Authority
- JP
- Japan
- Prior art keywords
- light
- substrate
- receiving element
- printed wiring
- frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 abstract description 10
- 239000011347 resin Substances 0.000 abstract description 8
- 229920005989 resin Polymers 0.000 abstract description 8
- 239000000919 ceramic Substances 0.000 abstract description 7
- 239000000126 substance Substances 0.000 abstract description 5
- 238000005476 soldering Methods 0.000 abstract description 4
- 238000007789 sealing Methods 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は発光素子と受光素子とを光軸結合して組合わせ
、入出力間を電気的には分離したまま信号のみを伝達す
るホトカプラに関するものである。[Detailed Description of the Invention] Industrial Application Field The present invention relates to a photocoupler that combines a light-emitting element and a light-receiving element by optical axis coupling, and transmits only signals while electrically separating input and output. be.
従来例の構成とその問題点
従来のホトカプラはそのほとんどがリードフレームに発
光素子と受光素子とを対峙させて搭載したもので、その
外形はデュアルインラインパッケージを採用している。Conventional configurations and their problems Most conventional photocouplers have a light-emitting element and a light-receiving element mounted on a lead frame, facing each other, and adopt a dual in-line package.
しかしながら電子機器の小型化、高信頼化を進めるため
にはさらに小型、高信頼性かつ組立自動化に適したホト
カプラが必要となっている。However, in order to advance the miniaturization and higher reliability of electronic devices, there is a need for photocouplers that are smaller, more reliable, and suitable for assembly automation.
発明の目的
本発明は、小型化、冒信頼化はもとより、量産化および
組立て自動化にすぐれたホトカプラを提供するものであ
る。OBJECTS OF THE INVENTION The present invention provides a photocoupler that is not only compact and reliable, but also suitable for mass production and assembly automation.
発明の構成
この目的を達成するために本発明のホトカプラば、スル
ーホールにて電気的導通を持たせたボンディング用電極
および半田付は用電極を有する印刷配線基板と樹脂封止
用の枠型の絶縁基板とを多連状で積層したものにその枠
内部で前記印刷配線基板に発光素子および受光素子を組
み込み、光反射性物質で封止したものであり、これによ
り、外部リード構造の微小化と、素子自体の超小型化が
実現される。Structure of the Invention In order to achieve this object, the photocoupler of the present invention comprises a printed wiring board having a bonding electrode and a soldering electrode that have electrical continuity through a through hole, and a frame type for resin sealing. A light-emitting element and a light-receiving element are incorporated into the printed wiring board inside the frame of a multi-layer stack of insulating substrates and sealed with a light-reflecting material, thereby miniaturizing the external lead structure. As a result, the device itself can be miniaturized.
実施例の説明
以下、本発明の一実施例について図面を参照しながら説
明する。DESCRIPTION OF EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings.
まず第１図は本発明の積層前の両糸板構造を示す展開図
である。第１図において、セラミック印刷配線基板１は
複数配線部２，３のそれぞれに、タングステンメタライ
ズのスルーホール電極４を形成したもので、これに枠型
のセラミック基板６を積層する。First, FIG. 1 is a developed view showing the structure of both yarn plates before lamination according to the present invention. In FIG. 1, a ceramic printed wiring board 1 has tungsten metallized through-hole electrodes 4 formed in each of a plurality of wiring parts 2 and 3, and a frame-shaped ceramic board 6 is laminated thereon.
次に、各配線部２，３およびスルーホール電極４に対し
ては、それぞれ、Ｎｉ またはＡｕまたはＡｑメッキを
施し、ボンディング可能な電極を形成した後、発光素子
６および受光素子７を光軸結合状態で、それぞれ、各配
線部上にダイスボンディングし、さらに、リード線結合
のだめのワイヤボンディングを行う。この状態での斜視
図を第２図に示す。Next, each wiring part 2, 3 and through-hole electrode 4 are plated with Ni, Au, or Aq to form a bondable electrode, and then the light emitting element 6 and the light receiving element 7 are optically coupled. In this state, die bonding is performed on each wiring portion, and further wire bonding is performed to connect the lead wires. A perspective view in this state is shown in FIG.
さらに第３図は本発明の完成品を断面図で示すものであ
る。第３図において、ベースとなるセラミック印刷配線
基板１と枠型のセラミック基板６とで囲まれた枠内部の
部分には発光素子６．受光素子７およびこれらのボンデ
ィングワイヤを保護するための光透過性樹脂８を注入硬
化しており、その表面には光反射性物質９を設けて発′
ｙｔ、素子からの光が受光素子にむけて効率良く反射さ
れるようにする。さらに枠型のセラミック基板５の内面
にも光反射性物質を設けてその反射効率を高めてもよい
。またスルーホール４はボンディング用電極となる配線
部２と半田付は用電極となる裏面側配線部３とを導通さ
せるためのものである。Further, FIG. 3 shows a sectional view of the finished product of the present invention. In FIG. 3, a light emitting element 6. A light-transmitting resin 8 for protecting the light-receiving element 7 and these bonding wires is injected and hardened, and a light-reflecting substance 9 is provided on the surface of the resin 8 to protect the light-receiving element 7 and these bonding wires.
yt, so that light from the element is efficiently reflected toward the light receiving element. Furthermore, a light-reflecting material may be provided on the inner surface of the frame-shaped ceramic substrate 5 to increase its reflection efficiency. The through hole 4 is used to establish electrical continuity between the wiring portion 2, which will serve as a bonding electrode, and the backside wiring portion 3, which will serve as a soldering electrode.
第４図は本発明の上記の光反射性物質９を設ける以前の
多連状態を示す図であり、また、この図中、１ｏは光反
射性物質９を設けた後のダイシングラインであり、この
ラインに沿って切断すれば、ホトカプラの単体が分離さ
れる。FIG. 4 is a diagram showing a multiple state before the above-mentioned light-reflective material 9 of the present invention is provided, and in this figure, 1o is a dicing line after the light-reflective material 9 is provided, By cutting along this line, the single photocoupler can be separated.
発明の効果 本発明によると、次のような効果をあげる。Effect of the invention According to the present invention, the following effects can be achieved.
（１）従来の外部リード（ピン）構造にくらべ、チップ
ボンド構造であシ、超小型が可能である。(1) Compared to the conventional external lead (pin) structure, the chip bond structure allows for ultra-small size.
（２）一枚のシートに集積するため製造および検査ライ
ンが自動化可能であり量産性が高い。(2) Since the materials are assembled on a single sheet, the manufacturing and inspection lines can be automated, and mass productivity is high.
（３）一枚のシートに集積するため品質が均一化され信
頼性が上がる。(3) Since the materials are collected on one sheet, the quality is made uniform and reliability is improved.
（４）従来のチップ部品と類似であシテーピング包装が
可能であるためユーザーでの組立作業が自動化できる。(4) Since it is similar to conventional chip parts and can be packaged using taping, the assembly work by the user can be automated.
第１図は本発明実施例要部の積層前の両基板の構造展開
図、第２図は各素子の組み込み状態の斜視図、第３図は
本発明実施例完成品の断面図、第４図は多連シート状に
おける光透過性樹脂を注入硬化した状態での斜視図であ
る。
１・・・・・・セラミック印刷配線基板、２・・・・・
・ボンディング用電極配線部、計・・・・・半田付は用
電極配線部、４・・・・・・スルーホール電極、５・・
・・・・枠型セラミック基板、６・・・・・・発光素子
、７・・・・・・受光素子、８・・・・・・光通過性樹
脂、９・・・・・・光反射性物質。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名第１
図
第２図Fig. 1 is a structural development view of both substrates before lamination of the main parts of the embodiment of the present invention, Fig. 2 is a perspective view of the assembled state of each element, Fig. 3 is a sectional view of the completed product of the embodiment of the invention, Fig. 4 The figure is a perspective view of a state in which a light-transmitting resin is injected and hardened in a multi-sheet form. 1...Ceramic printed wiring board, 2...
・Electrode wiring part for bonding, total...Electrode wiring part for soldering, 4...Through-hole electrode, 5...
... Frame-shaped ceramic substrate, 6 ... Light emitting element, 7 ... Light receiving element, 8 ... Light transmitting resin, 9 ... Light reflection sexual substance. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure 2
Claims (1)
の印刷配線基板上に発光素子および受光素子を互いに光
軸結合させて搭載したホトカプラ。A photocoupler in which a printed wiring board and a frame-shaped insulating board are laminated, and a light emitting element and a light receiving element are mounted on the printed wiring board inside the frame with optical axes coupled to each other.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59118425A JPS60262475A (en) | 1984-06-08 | 1984-06-08 | Photo-coupler |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59118425A JPS60262475A (en) | 1984-06-08 | 1984-06-08 | Photo-coupler |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60262475A true JPS60262475A (en) | 1985-12-25 |
Family
ID=14736322
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59118425A Pending JPS60262475A (en) | 1984-06-08 | 1984-06-08 | Photo-coupler |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60262475A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005502205A (en) * | 2001-08-31 | 2005-01-20 | フェアチャイルド セミコンダクター コーポレイション | Surface mountable optical coupling device package |
| DE19733996B4 (en) * | 1997-08-06 | 2006-03-23 | Leuze Electronic Gmbh & Co Kg | Optoelectronic sensor |
| US7030359B2 (en) | 2002-03-07 | 2006-04-18 | CiS Institut für Mikrosensorik gGmbH | Sensor detecting reflected light and method for its manufacture |
-
1984
- 1984-06-08 JP JP59118425A patent/JPS60262475A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19733996B4 (en) * | 1997-08-06 | 2006-03-23 | Leuze Electronic Gmbh & Co Kg | Optoelectronic sensor |
| JP2005502205A (en) * | 2001-08-31 | 2005-01-20 | フェアチャイルド セミコンダクター コーポレイション | Surface mountable optical coupling device package |
| US7030359B2 (en) | 2002-03-07 | 2006-04-18 | CiS Institut für Mikrosensorik gGmbH | Sensor detecting reflected light and method for its manufacture |
| DE10309747B4 (en) * | 2002-03-07 | 2011-11-24 | CiS Institut für Mikrosensorik gGmbH | Auflichtsensor and method for its preparation |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7112457B2 (en) | Method of manufacturing an opto-coupler | |
| US5271083A (en) | Molded optical waveguide with contacts utilizing leadframes and method of making same | |
| JPH08298345A (en) | Chip type light emitting diode | |
| JP4117868B2 (en) | Optical coupling element | |
| JPS60262475A (en) | Photo-coupler | |
| JPH1093132A (en) | Photocoupler | |
| JPH08186284A (en) | Surface-mounting photocoupler and its manufacture | |
| JPH0661522A (en) | Reflection type photocoupler | |
| JP2006066551A5 (en) | ||
| JP2981371B2 (en) | Optical coupling device | |
| JP2665914B2 (en) | Semiconductor device and manufacturing method thereof | |
| JP3448627B2 (en) | Optical module and method of manufacturing the same | |
| JP3710522B2 (en) | Optical semiconductor device and manufacturing method thereof | |
| JP3172630B2 (en) | Film carrier type optical coupling device and method of manufacturing the same | |
| JP2927602B2 (en) | Optical coupling device | |
| JP2601426Y2 (en) | Optical coupling device | |
| JP2981355B2 (en) | Manufacturing method of optical coupling device | |
| JP3736226B2 (en) | SAW device | |
| JP3118353B2 (en) | Optical semiconductor coupling device | |
| JPS59175172A (en) | Photocoupler device | |
| JPH04334072A (en) | Photo coupler and its manufacture | |
| JP2001326381A (en) | Semiconductor relay | |
| JPH0430582A (en) | Photocoupler | |
| JPH0766445A (en) | Photo semiconductor device | |
| JPS6267882A (en) | Manufacture of optocoupler |