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JPS60205452A - Exposing method - Google Patents

Exposing method

Info

Publication number
JPS60205452A
JPS60205452A JP59060863A JP6086384A JPS60205452A JP S60205452 A JPS60205452 A JP S60205452A JP 59060863 A JP59060863 A JP 59060863A JP 6086384 A JP6086384 A JP 6086384A JP S60205452 A JPS60205452 A JP S60205452A
Authority
JP
Japan
Prior art keywords
substrate
exposure
mask
photomask
flexible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59060863A
Other languages
Japanese (ja)
Inventor
Hisanori Tsuda
津田 尚徳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP59060863A priority Critical patent/JPS60205452A/en
Publication of JPS60205452A publication Critical patent/JPS60205452A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2035Exposure; Apparatus therefor simultaneous coating and exposure; using a belt mask, e.g. endless

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To form continuously patterns on a substrate having a long size in the moving direction with high patterning accuracy by using an endless mask as a photomask for exposure and carrying out continuous exposure while moving the photomask and the substrate at the same speed. CONSTITUTION:A flexible substrate 1 to be exposed is coated with a photosensitive substance. The preferred material of the substrate 1 is polyimide resin or fluororesin. An endless flexible mask 2 has patterns of prescribed line density formed at a prescribed pitch. The substrate 1 and the mask 2 are moved at the same speed with drive rollers 4-1-6-2, and exposure is carried out with an exposer 3 during movement from a slit 7-1 to a slit 7-2. Slight reverse tension is applied to the drive rollers 4-1, 4-2 so as to prevent the slacking of the film. The exposed substrate 1 is sent to a developing device and developed at a stroke.

Description

【発明の詳細な説明】 本発明は、感光性物質を塗布した一方向に長い基板に、
露光用フォトマスクを用いて露光する方法に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention provides a method for applying a photosensitive material to a substrate long in one direction.
The present invention relates to an exposure method using an exposure photomask.

従来、感光性物質を塗布した基板に、露光用フォトマス
クを用いて露光する方法において、露光装置aに用いる
マスクの大きさが限定されていること、一方向に長い基
板に庭先する場合には、複数回ステップ状に基板を送り
ながら露光を繰り返さなければy)(らないこと、マス
クがハードマスクであったために露光時の基板との密名
に柔軟性がなく、フレキシブルな基板にはシl光できな
いこと、基板が平面のものに限られていること、ユンチ
ング用レジストをスクリーン印刷する場合にはパターニ
ングの精度が1. OOlt程度で低いこと等の欠点が
あった。
Conventionally, in the method of exposing a substrate coated with a photosensitive material using an exposure photomask, the size of the mask used in the exposure device a is limited, and when the substrate is long in one direction, , unless the exposure is repeated while feeding the substrate multiple times in steps, the mask is a hard mask, so there is no flexibility in contacting the substrate during exposure, and flexible substrates cannot be used with a flexible substrate. There are disadvantages such as the inability to use light, the limitation to flat substrates, and the low patterning accuracy of about 1.00 liters when screen printing resist for Yunching.

本発明は、」二記した従来の欠点に鑑めてなされたもの
であり、感光性物質をt4 Mi L、た一方向に長い
基板に、露光用フォトマスクを用いて露光する方法にお
いて、連続的に露光することがIiI能であり、バター
ニングの精度が高く、安価な基板を用いることのできる
露光方法を提供することを目的とする。
The present invention has been made in view of the drawbacks of the conventional art described in Section 2, and is a method of continuously exposing a photosensitive material to t4 Mi L onto a long substrate in one direction using an exposure photomask. It is an object of the present invention to provide an exposure method that enables highly accurate exposure, has high patterning accuracy, and can use an inexpensive substrate.

すなわち、本発明は感光性物質を有する基板に露光用フ
ォトマスクを用いて露光する露光方θ、にオイ7、mJ
 3.、! M & L 13iJ 3i27 t )
 窄」7猶ト−’iF’−一゛−′ −こと を9.1徴とするh・τ1光方法を提供」−るものであ
る。
That is, the present invention exposes a substrate having a photosensitive material using an exposure photomask at an exposure direction θ, a temperature of 7, mJ.
3. ,! M&L 13iJ 3i27t)
The present invention provides an h.tau.1 optical method in which the 9.1 characteristics are 7 and 7 and 9.1.

以下、図面(二より本発明をさらに長体的(−説明す 
イ) 。
Hereinafter, the present invention will be explained in a more detailed manner than in the drawings (2).
stomach) .

第1図は、本発明の露光方法を説明するたy)の装置’
Aの模式図であり、第2図は該装]〆1を正面からM、
た模式図であり、第6図は該装置を側面から見た模式図
であり、第4 :A+は円筒状ハードマスクを用いた]
易frの正面図である。。
FIG. 1 shows the apparatus of y) for explaining the exposure method of the present invention.
Fig. 2 is a schematic diagram of A.
FIG. 6 is a schematic diagram of the device viewed from the side; 4th: A+ uses a cylindrical hard mask]
It is a front view of easy fr. .

第11メ1〜第4図(二おいて、1はi#j; −A’
、 (’れるフレキ/プル基板であ−って、あらかし、
めd′公、光171物′員が塗布されている。ここ(二
基板としてフレキ/プル基板を図示したが、固定(リジ
ッド)長111用、11(板を用いてもLい、フレキ/
プル基板1の+’)+”)lとしてはポリイミド(酊脂
、フッ素f☆伊]17、マイラ等が好ましい。2はフレ
キンプルマスクCあす、ノ9[定のピッチでツタ1定0
)線′高度のパターンが形成さλしている。基板1とフ
レキンプルマスク2は、ドライブローラ4−1〜62(
二より同じ速1追で移動し、スリット7−1からスリッ
ト7−2(二移動するまで露光器6も二より露光されろ
。ドライプロ ラ4−1および4−2は、フィルムかた
るJ↓U)を防ぐため(二連テノ/ヨノが僅かにかけら
れている。
Figures 11-4 (In 2, 1 is i#j; -A'
, (It is a flexible/pull board that can be used,
The light 171 members are applied. Here (a flexible/pull board is shown as two boards, one for fixed (rigid) length 111, one for 11 (L even if using a board, flexible/pull board)
+')+")l of the pull board 1 is preferably polyimide (rozen fat, fluorine f☆i) 17, mylar, etc. 2 is a flexible pull mask C tomorrow, no 9 [with a constant pitch, ivy 1 constant 0
) Lines ′ form a pattern of altitude λ. The substrate 1 and flexible mask 2 are mounted on drive rollers 4-1 to 62 (
The exposure device 6 is also exposed from the second direction until it moves from the slit 7-1 to the slit 7-2 (two times) at the same speed. In order to prevent U), (double teno/yono is applied slightly).

ドライブローラ4−1〜6−2の回転速度は、用いる感
光性物質の特性による)h光時間に1−7)て沃足され
る。霧光された基板1は、現像装置6(不1ソj示)(
二送られ、現像まで一括し7て行t【われる、。
The rotational speed of the drive rollers 4-1 to 6-2 is determined by the light time (1-7) depending on the characteristics of the photosensitive material used. The fogged substrate 1 is transferred to a developing device 6 (not shown) (
The process is carried out in 7 lines until development.

前記エンドレスマスクとしては、第1図および第2図(
二本されるように、フレキンプルマスクタ用いてもよく
、また第4区(ニアIe 3れるよう(1円筒状のハー
ドマスク2を用いてもよい2、l■l筒υ′l/)・・
−ドマスクを用いた場合、基イu目フレキ/グルノ1(
板(二限定されるが連続的(二蕗尤ずろことがuJ’ 
ii卜(ある。
The endless mask shown in FIGS. 1 and 2 (
You may use a flexible mask so that there are two, or you may use a cylindrical hard mask 2, or you may use a cylindrical hard mask 2.・・・
- When using a mask, base 1 flexible/gluno 1 (
board (two limited but continuous
ii 卜 (There is.

8−1および8−2はピノJ−ローラである1、実施例 第1図〜第6図(二本されるよう警−1基板1−(。8-1 and 8-2 are Pino J-rollers 1, Example Figures 1 to 6 (See Figure 1 to Figure 6.)

てポリイミドフィルム(1[JO/IJ!))を用い、
■−7ドレスマスク2としてポリイミドフィルム(8[
Jμ厚)を用いた。エツトレスマスク2 );f 、あ
りかじめ用足のピッチでステップ露光をして、i5i定
線狸1度Q)パターンを作った。NG バター7と[7
て60trm 釈rt]で125μm間隔のストライプ
パターンポストベ−りをしておいた◇ エンドレスマスク2を露光装置117+ニセツトし、ピ
ッチローラ8−1および8−2で(1トえ−〕げた。次
に基板1をセットし、ドライブロー ラ4−1おまひ5
−1で押えつけた。次いでドライブローラ4−1および
4−2(二う出立(二とデノンヨ/をか(す、t☆置合
わせおよびけ、崩−を完了させた。さらに、基板1とエ
ンドレスマスク2とを同じ、t8度で移動させ、露光器
6で連続的(二露光した。あらかじめスリット7−1お
よび7−2は露光時間が1o秒とt【るよう(二調整し
ておいた。
using polyimide film (1[JO/IJ!)]
■-7 Polyimide film (8[
Jμ thickness) was used. Ettress mask 2); f Step exposure was carried out at the pitch of the Arijime foot to create an i5i fixed line raccoon 1 degree Q) pattern. NG Butter 7 and [7
◇ The endless mask 2 was set in the exposure device 117+, and was rolled (1 toe) with the pitch rollers 8-1 and 8-2.Next Set the board 1 on the drive roller 4-1
I held it down at -1. Next, the drive rollers 4-1 and 4-2 (two departures (two departures), t☆ alignment, and disassembly were completed. , t8 degrees, and continuous (two exposures) were carried out using the exposure device 6. The slits 7-1 and 7-2 were adjusted in advance so that the exposure time was 10 seconds.

露光された基板1は、その現疼;を連続的に行なったが
、エツチングおよびハクリまで連続的に行なってもよい
Although the exposed substrate 1 was continuously etched, it may also be etched and peeled continuously.

上記の方法で路光および現像を行なった結果、得られた
バターニノグ精度は、59士6μm O)4・14囲で
あった〇 以上説明したように、本発明Q)絆、光力θ(−11れ
ハ、露光用フォトマスクとしてエンドレスマスクを用い
、該路光用フォトマスクと基板とを同じ連夏f二移動さ
せながら連続的(二露光すること(二、1、す、移」υ
]力方向長い基板(二、バター7を連続的じ、(7かも
高いパターニノグ精度で形成することかで1Aる0
As a result of performing the path light and development using the above method, the obtained butter-nigning accuracy was 59 × 6 μm O) 4.14 As explained above, the present invention Q) bond, optical power θ (- 11, an endless mask is used as an exposure photomask, and the light path photomask and the substrate are continuously exposed while moving f2 in the same consecutive summer (2, 1, s, movement) υ
] A long substrate in the force direction (2) The butter 7 is continuously formed, (7 is also formed with high patterning accuracy to achieve 1A or 0

【図面の簡単な説明】[Brief explanation of the drawing]

第1〆jは、本発明の露光方法を説明するための装置の
模式図であり、第2図はA1.KI首全+l’、 tf
nからみた模式図であり、第6図は該装置4+を(Il
l而からみた模式図であり、第4図は円筒状バー ドマ
スクを用いた場合の正面図である。 1基板 2 エンドレスマスク 6 ・露光器 4−1.4−2.5−1.5−2.6 1゜6−2 ド
ライブローラ 7−1 、7−2 スリット d−1,8−2ピンチローラ 局♂1出願人 キャノン株式会社 1(埋入 名 林 Z ( 第1図 第 2 図 第3図
1.J is a schematic diagram of an apparatus for explaining the exposure method of the present invention, and FIG. 2 is A1.J. KI neck whole + l', tf
FIG. 6 is a schematic diagram of the device 4+ as seen from (Il
FIG. 4 is a schematic diagram as seen from the front, and FIG. 4 is a front view when a cylindrical bird mask is used. 1 Substrate 2 Endless mask 6 ・Exposure device 4-1.4-2.5-1.5-2.6 1゜6-2 Drive roller 7-1, 7-2 Slit d-1, 8-2 Pinch roller Bureau ♂1 Applicant: Canon Co., Ltd. 1 (embedded name: Hayashi Z) (Figure 1 Figure 2 Figure 3

Claims (1)

【特許請求の範囲】 1、感光性物質をノ、L板に、露光用フォトマスクを用
いて露光する露光方法において、前記基板と前記フォト
マスクを等速度で移動させながら露光することを特徴と
する露光方法。 2前記フオトマスクがエンドレスマスクであることを特
徴とする特許請求の範囲第1項記載の露光方法。 3前記フオトマスクがハードマスクであることを特徴と
する特y1.請求の範囲第1項記載の露光方法。 4、+s’J 記フォトマスクがフレキシブルマスクで
あることを特徴とする特許請求の範囲第1項記載の露光
か法。
[Claims] 1. An exposure method in which a photosensitive material is exposed on an L plate using an exposure photomask, characterized in that the exposure is performed while moving the substrate and the photomask at a constant speed. exposure method. 2. The exposure method according to claim 1, wherein the photomask is an endless mask. 3. The photomask is a hard mask. y1. An exposure method according to claim 1. 4. The exposure method according to claim 1, wherein the +s'J photomask is a flexible mask.
JP59060863A 1984-03-30 1984-03-30 Exposing method Pending JPS60205452A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59060863A JPS60205452A (en) 1984-03-30 1984-03-30 Exposing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59060863A JPS60205452A (en) 1984-03-30 1984-03-30 Exposing method

Publications (1)

Publication Number Publication Date
JPS60205452A true JPS60205452A (en) 1985-10-17

Family

ID=13154647

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59060863A Pending JPS60205452A (en) 1984-03-30 1984-03-30 Exposing method

Country Status (1)

Country Link
JP (1) JPS60205452A (en)

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0467654U (en) * 1990-10-24 1992-06-16
WO2002065215A2 (en) * 2001-02-15 2002-08-22 Sipix Imaging, Inc. Process for roll-to-roll manufacture of a display by synchronized photolithographic exposure on a substrate web
WO2002067058A1 (en) * 2001-02-21 2002-08-29 Siemens Aktiengesellschaft Assembly for the continuous production of a structured, coated substrate
US6751008B2 (en) 2000-03-03 2004-06-15 Sipix Imaging, Inc. Electrophoretic display and novel process for its manufacture
US6784953B2 (en) 2001-01-11 2004-08-31 Sipix Imaging, Inc. Transmissive or reflective liquid crystal display and novel process for its manufacture
US6795229B2 (en) 2001-08-28 2004-09-21 Sipix Imaging, Inc. Electrophoretic display with sub relief structure for high contrast ratio and improved shear and/or compression resistance
US6829078B2 (en) 2000-03-03 2004-12-07 Sipix Imaging Inc. Electrophoretic display and novel process for its manufacture
US6831770B2 (en) 2000-03-03 2004-12-14 Sipix Imaging, Inc. Electrophoretic display and novel process for its manufacture
US6833943B2 (en) 2000-03-03 2004-12-21 Sipix Imaging, Inc. Electrophoretic display and novel process for its manufacture
US6850355B2 (en) 2001-07-27 2005-02-01 Sipix Imaging, Inc. Electrophoretic display with color filters
US6865012B2 (en) 2000-03-03 2005-03-08 Sipix Imaging, Inc. Electrophoretic display and novel process for its manufacture
JP2005182007A (en) * 2003-12-16 2005-07-07 Lg Electron Inc Patterning apparatus and method for continuous patterning using the same
JP2005215686A (en) * 2004-02-02 2005-08-11 Lg Electron Inc Exposure apparatus
US6947202B2 (en) 2000-03-03 2005-09-20 Sipix Imaging, Inc. Electrophoretic display with sub relief structure for high contrast ratio and improved shear and/or compression resistance
JP2006038902A (en) * 2004-07-22 2006-02-09 Toppan Printing Co Ltd Method and device to manufacture diffusing film
US7141279B2 (en) 2002-11-25 2006-11-28 Sipix Imaging, Inc. Transmissive or reflective liquid crystal display and novel process for its manufacture
US7158282B2 (en) 2000-03-03 2007-01-02 Sipix Imaging, Inc. Electrophoretic display and novel process for its manufacture
WO2012069807A3 (en) * 2010-11-23 2012-07-19 Rainbow Technology Systems Limited Photoimaging
US8367306B1 (en) * 2009-07-13 2013-02-05 Hrl Laboratories, Llc Method of continuous or batch fabrication of large area polymer micro-truss structured materials
US9081250B2 (en) 2000-03-03 2015-07-14 E Ink California, Llc Electrophoretic display and process for its manufacture
JP2016197241A (en) * 2011-11-04 2016-11-24 株式会社ニコン Pattern forming method and device

Cited By (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0467654U (en) * 1990-10-24 1992-06-16
US7158282B2 (en) 2000-03-03 2007-01-02 Sipix Imaging, Inc. Electrophoretic display and novel process for its manufacture
US6867898B2 (en) 2000-03-03 2005-03-15 Sipix Imaging Inc. Electrophoretic display and novel process for its manufacture
US6865012B2 (en) 2000-03-03 2005-03-08 Sipix Imaging, Inc. Electrophoretic display and novel process for its manufacture
US6751008B2 (en) 2000-03-03 2004-06-15 Sipix Imaging, Inc. Electrophoretic display and novel process for its manufacture
US6947202B2 (en) 2000-03-03 2005-09-20 Sipix Imaging, Inc. Electrophoretic display with sub relief structure for high contrast ratio and improved shear and/or compression resistance
US9081250B2 (en) 2000-03-03 2015-07-14 E Ink California, Llc Electrophoretic display and process for its manufacture
US6859302B2 (en) 2000-03-03 2005-02-22 Sipix Imaging, Inc. Electrophoretic display and novel process for its manufacture
US6829078B2 (en) 2000-03-03 2004-12-07 Sipix Imaging Inc. Electrophoretic display and novel process for its manufacture
US6831770B2 (en) 2000-03-03 2004-12-14 Sipix Imaging, Inc. Electrophoretic display and novel process for its manufacture
US6833943B2 (en) 2000-03-03 2004-12-21 Sipix Imaging, Inc. Electrophoretic display and novel process for its manufacture
US7095477B2 (en) 2001-01-11 2006-08-22 Sipix Imaging, Inc. Transmissive or reflective liquid crystal display and process for its manufacture
US6795138B2 (en) 2001-01-11 2004-09-21 Sipix Imaging, Inc. Transmissive or reflective liquid crystal display and novel process for its manufacture
US6784953B2 (en) 2001-01-11 2004-08-31 Sipix Imaging, Inc. Transmissive or reflective liquid crystal display and novel process for its manufacture
WO2002065215A3 (en) * 2001-02-15 2003-10-09 Sipix Imaging Inc Process for roll-to-roll manufacture of a display by synchronized photolithographic exposure on a substrate web
WO2002065215A2 (en) * 2001-02-15 2002-08-22 Sipix Imaging, Inc. Process for roll-to-roll manufacture of a display by synchronized photolithographic exposure on a substrate web
WO2002067058A1 (en) * 2001-02-21 2002-08-29 Siemens Aktiengesellschaft Assembly for the continuous production of a structured, coated substrate
US6850355B2 (en) 2001-07-27 2005-02-01 Sipix Imaging, Inc. Electrophoretic display with color filters
US6795229B2 (en) 2001-08-28 2004-09-21 Sipix Imaging, Inc. Electrophoretic display with sub relief structure for high contrast ratio and improved shear and/or compression resistance
US7141279B2 (en) 2002-11-25 2006-11-28 Sipix Imaging, Inc. Transmissive or reflective liquid crystal display and novel process for its manufacture
JP2005182007A (en) * 2003-12-16 2005-07-07 Lg Electron Inc Patterning apparatus and method for continuous patterning using the same
JP4556173B2 (en) * 2003-12-16 2010-10-06 エルジー エレクトロニクス インコーポレイティド Patterning apparatus and continuous patterning method using the same
JP2005215686A (en) * 2004-02-02 2005-08-11 Lg Electron Inc Exposure apparatus
JP2006038902A (en) * 2004-07-22 2006-02-09 Toppan Printing Co Ltd Method and device to manufacture diffusing film
US8367306B1 (en) * 2009-07-13 2013-02-05 Hrl Laboratories, Llc Method of continuous or batch fabrication of large area polymer micro-truss structured materials
WO2012069807A3 (en) * 2010-11-23 2012-07-19 Rainbow Technology Systems Limited Photoimaging
US9134614B2 (en) 2010-11-23 2015-09-15 Rainbow Technology Systems Ltd Photoimaging
JP2016197241A (en) * 2011-11-04 2016-11-24 株式会社ニコン Pattern forming method and device

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