JPS60131969A - Chemical vapor growth deposition device - Google Patents

Abstract

PURPOSE:To reduce the size of the titled device and to deposit and form uniformly a required film on the surface of a substrate with good productivity by forming a heating body of a ceramic heater in common use as a supporting base for supporting a substrate to be treated. CONSTITUTION:A resistor is printed on a sheet consisting of alumina, etc. and an insulating protective layer is coated thereon and is integrally sintered to form a ceramic heater 30. A substrate 31 to be treated is held on the heater 30. A reactive gas is introduced from a reactive gas source 32 into a reaction chamber 36. Electricity is fed to the heater 30 by an electrode lead-out wire 40 provided through the spacer. The resistor heats directly the supporting part consisting of the ceramics and the substrate 31 by the transferred heat and therefore the heat response is fast and shorter time is required for heating up to the required temp. The treating cycle is thus reduced.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a chemical vapor deposition processing apparatus, and more particularly, to
It quickly heats the substrate to be processed, such as a silicon substrate, to the required processing temperature, and evenly heats the surface of the substrate to be processed.
The present invention relates to a chemical vapor deposition processing apparatus capable of uniformly depositing a desired film on the surface of a substrate to be processed with high productivity.

Chemical vapor deposition processing equipment deposits a silicon dioxide (Si0z) film on a substrate to be processed such as a semiconductor substrate or a ceramic substrate.
It is provided for the purpose of depositing and forming silicon nitride (SiJN+) films, phosphosilicate glass (PSG) films, polycrystalline silicon films, etc.

In these devices, it is desired that production efficiency be further improved and that the deposited film be formed to have a uniform thickness with high accuracy.

Chemical vapor deposition apparatuses used in such vapor phase growth processes have conventionally been of the vertical type shown in FIG. 1 and the horizontal type shown in FIG. 2, for example.

In these devices, within the reaction chamber 11.21 the objective,
Raw material gas for film deposition treatment, such as monosilane (
SII14), phosphine (PHa), oxygen (0z
), etc. are introduced through a reaction gas introduction pipe 12.22, and the reaction chamber is maintained at an appropriate temperature for processing while being exhausted through an exhaust pipe 13.23. And this reaction chamber 11.2
1. Semiconductor or ceramic substrate 1' to be processed within 1
By placing 4.24 on a support stand 15°25, it is possible to form a film such as a silicon compound film or a polycrystalline silicon film on the surface of the substrate to be processed. can.

In FIG. 1, 10 is a heater cover, 16 is a heating element (heater), 17 is a reactant gas source, 18 is a cooling plate, 1
9 is a gas flow buffer, and in FIG.
is a pressure detector, 26 is a heating element, 27 is a reactant gas source, 28
is a quartz glass tube.

In the case of the vertical type shown in FIG. heated to temperature. Since the substrate 14 to be processed is in close contact with the support stand 15, there is an advantage that the temperature of the substrate 14 to be processed can be easily controlled uniformly.

However, in the above case, the substrate 14 to be processed is
Therefore, in order to obtain the desired temperature on the surface of the substrate 14 to be processed, the temperature of the heating element 16 itself must be set 100°C to 200°C higher than the desired temperature, and only radiant heat is used. It is not efficient because it uses Further, since the thermal response is slow, it takes about 10 to 20 minutes to recover the desired temperature after the substrate 14 to be processed is installed, and there is a drawback that productivity is extremely poor. Furthermore, the substrate to be processed 14 can naturally be installed only on one side of the support stand 15, and cannot be installed on both sides, resulting in poor productivity in terms of throughput. Furthermore, as the diameter of the substrate 14 to be processed increases, the size of the heating element 16 must be increased, which inevitably increases the price of the heating element 16. Furthermore, when the heating element 16 is installed in the reaction chamber 11, the heating element 16 itself, which is made of tantalum wire or the like, is a source of alkali metal contamination and particle contamination that causes pinholes, which are most hated in the manufacture of semiconductor devices. There is a drawback.

The heating body 26 in the conventional example shown in FIG. 2 may employ a high frequency induction heating method or a resistance heating method.

However, the high-frequency induction heating method has various drawbacks, such as the oscillator being large and expensive, the operation being dangerous, and the need for a large amount of cooling water. In addition, the resistance heating method also has the disadvantage of increasing the size of the apparatus, and since the quartz glass tube 28 is heated to a temperature approximately 10 to 20 degrees Celsius higher than the substrate 24 to be processed, the quartz glass tube 28 is heated to a higher temperature than the substrate 24 to be processed. The problem is that a film is formed.

The present invention has been made in order to solve the various difficulties mentioned above, and its purpose is to use a chemical method that can reduce the size of the apparatus and that can uniformly form a desired film on the surface of a substrate to be processed with high productivity. To provide vapor phase growth processing equipment,
The feature is that in a chemical vapor deposition processing apparatus that introduces a reaction gas or the like into a reaction chamber equipped with a heating means and forms a film of a desired substance on a substrate to be processed housed in the reaction chamber, the heating The means is a heating body that also serves as a support stand that closely supports the substrate to be processed, in which a resistor is laid on the surface layer or near the surface layer of a support portion made of ceramic or the like.

DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described in detail below based on the accompanying drawings.

FIG. 3 shows a schematic configuration of a chemical vapor deposition processing apparatus according to the present invention.

In the figure, 30 is a ceramic heater which is the main component of the present invention. The ceramic heater 30 is made by printing a resistor on an alumina sheet, coating it with an insulating protective layer, and simultaneously sintering the alumina sheet, resistor, and alumina protective layer together at high temperature. A substrate 31 to be processed is held on this ceramic heater 30 . Reference numeral 32 denotes a reactant gas source, and the reactant gas from the reactant gas source 32 is introduced into the reaction chamber 36 through a mesoche filter 35 via a valve 33 and a gas introduction pipe 34 . Unreacted gases and unreacted products are exhausted from exhaust pipe 37. Note that reference numerals 38 and 39 are gold-plated reflecting plates, which are placed behind the ceramic heater 30 to prevent loss of radiant heat.

The reflector plates 38 and 39 and the ceramic heater 30 are fixedly arranged at a predetermined distance via a spacer 41, so that the Ceravec heater 30 is arranged at a predetermined position within the reaction chamber 36. It is. Power is supplied to the ceramic heater 30 by an electrode lead wire 40 provided through the spacer 41 described above.

Using the above chemical vapor deposition processing apparatus, the substrate to be processed 31
An example in which phosphosilicate glass (PSG) was deposited on the surface is shown below.

A silicon substrate is used as the substrate to be processed and is held on a ceramic heater 30. Power is supplied to the ceramic heater 30 to heat the silicon substrate to 420°C.

Monosilane (4% SiH based on N2 gas, flow rate 200cc/min), phosphine (0,1% PHj based on Nz gas, flow rate 600cc/min)
), oxygen (02, flow rate 200cc/win') and nitrogen <N! , flow rate 36/win) is used as a rear gas from the reaction gas source 32, via the valve 33, the gas introduction pipe 34, and the mesh filter 35 to the reaction chamber 36.
When introduced into a phosphorus silicate glass film, a phosphosilicate glass film with a uniform thickness of 3900 nm was formed on the surface of a silicon substrate within a reaction time of 10 minutes.

In the present invention, by forming the heating body as a ceramic heater that also serves as a support stand that supports the substrate 31 to be processed, the supporting portion including the resistor made of ceramic 6 and the substrate 31 to be processed can be heated by direct transfer heat. Therefore, the thermal response is fast, and the time required to raise the temperature of the supporting part and the substrate to be processed 31 to the required temperature is less than 10 to 20 minutes as described above when conventionally heated with radiant heat. However, it only takes a short time of about 2 to 3 minutes, which shortens the processing cycle and improves production efficiency accordingly. Further, the substrate to be processed 31 is connected to the ceramic heater 3
0, the substrate 31 to be processed is heated to a uniform temperature, and the resulting film has an ideally uniform thickness. Of course, the heating rate of the ceramic that is the supporting part is slightly slower than that of the resistor itself, but eventually it will rise to a temperature that almost matches the temperature of the resistor, so even if temperature control is only current control. It has the advantage of being easy and accurate. Further, since the thermal energy of the resistor is effectively used only for heating the ceramic serving as the support portion and the substrate 31 to be processed, the degree of loss as radiant heat is small, and efficient heating can be performed. The radiant heat lost from the ceramic support is effectively recovered by the reflective plates 38 and 39.
Therefore, since the walls and other members of the reaction chamber 36 are hardly heated, chemical vapor deposition of a film on these walls can be prevented.

Furthermore, in the present invention, by supporting the ceramic heater 30 in the reaction chamber 36 interior space with appropriate members, the substrate to be processed can also be placed on the back side of the ceramic heater 30.
1 can be maintained and a film can be grown by chemical vapor deposition. In this case, resistors can be provided on both sides of the ceramic, if necessary. Note that the ceramic supporting portion can be formed into a thin plate with a thickness of about 51 mm, so that the device can be miniaturized. Further, in the above embodiment, a case was explained in which alumina was used as the support part of the heating body, but the present invention is not limited to this, and the present invention is not limited to this.
Silicon nitride or the like can be effectively used. The material of the support portion is appropriately selected depending on the processing conditions.

FIG. 4 shows another embodiment.

In the figure, 52 is a reaction chamber, which is connected to the reaction gas source 42 via a valve 43. 44 is an exhaust valve, 4
5 is a pressure sensor.

In this embodiment, a ceramic heater 47 configured in the same manner as described above is mounted on a support plate 46 disposed at the bottom of the reaction chamber 52.
A large number of these are erected and fixed in parallel at predetermined intervals. The substrate to be processed 48 is held on both sides of this ceramic heater 47 . In this case, the ceramic heater 47
The substrate to be processed 48 can be propped up on the inclined surface by forming both sides of the inclined surface and by providing a protruding pin (not shown) or the like for supporting the lower edge of the substrate to be processed 48 on the inclined surface. It can be maintained.

Power is supplied to the ceramic heater 47 by connecting an electrode lead wire 49 extending through the support plate 46 to a power source 50 . Note that 51 is a gold-plated reflective plate.

It will be obvious that this embodiment also has the same effects as the above-mentioned embodiments.

An example in which a polycrystalline silicon layer is deposited and formed on the surface of a substrate to be processed 48 using the above-mentioned apparatus will be shown below.

A silicon substrate is used as the substrate to be processed, held in front of the ceramic heater 47, and heated to 700°C. Next, open the exhaust valve 44 and use the exhaust device (not shown).
While evacuating the reaction chamber 52 by opening the valve 43,
20% monosilane (,5 it) from the reactant gas source 42
1+) is introduced, and the pressure inside the reaction chamber 52 is reduced to 0.
．． When a vapor phase growth process was performed for 20 minutes while maintaining the temperature at 57 orr, a polycrystalline silicon film having a uniform thickness of 4000 nm was obtained on the surface of the silicon substrate. Note that by cooling the space between the reflection plate 51 and the reaction chamber 52 with water, the reaction chamber 52
Almost no polycrystalline silicon was deposited on the inner wall.

Further, the above case can also be carried out without reducing the pressure inside the reaction chamber.

As another example, although not shown, a plurality of ceramic heaters are provided vertically in a tiered manner at appropriate intervals in the reaction chamber, and the substrate to be processed is held on the upper and lower surfaces of each ceramic heater by appropriate holding means. It is also possible to configure it as follows, and it becomes possible to effectively utilize the space in the vertical direction.

As described above, according to the chemical vapor deposition processing apparatus according to the present invention, the heating element is formed as a heater that also serves as a support stand that supports the substrate to be processed, so that the apparatus can be made smaller, and the resistance element can be reduced. Since the supporting portion and the substrate to be processed are heated by direct heat transferred from the resistor, the temperature rise rate is fast, and production efficiency is greatly increased. Furthermore, by holding the substrate to be processed on both sides of the heating element, production efficiency can be improved, and furthermore, the temperature of the heating element can be controlled easily and accurately, and a film of uniform thickness can be obtained. Furthermore, since the heating body wastefully heats surrounding members to a lesser extent, formation of a film on surrounding members can be prevented.

Although the present invention has been variously explained above with reference to preferred embodiments, the present invention is not limited to these embodiments, and it goes without saying that many modifications can be made without departing from the spirit of the invention. It is.

[Brief explanation of drawings]

FIGS. 1 and 2 are explanatory diagrams showing a conventional chemical vapor deposition processing apparatus. FIG. 3 is an explanatory diagram showing a chemical vapor deposition processing apparatus according to the present invention, and FIG. 4 is an explanatory diagram showing another embodiment. 10... Heater cover, 11... Reaction chamber, 1
2... Reaction gas introduction pipe, 13... Exhaust pipe, 14.
...Substrate to be processed, 15...Support stand, 16...Heating body (heater), 17...Reactive gas source, 1B...
Cooling plate, 19... Gas flow buffer, 20... Pressure detector. 21... Reaction chamber, 22... Reaction gas introduction pipe. 23...Exhaust pipe, 24...Substrate to be processed. 25... Support stand, 26... Heating body, 27... Reaction gas source, 28... Quartz glass tube. 30... Ceramic heater, 31... Substrate to be processed,
32... Reaction gas source, 33... Valve, 34...
Gas inlet pipe, 35...mesh filter, 36...
・Reaction chamber. 37...Exhaust pipe, 38.39...Reflector, 4
0... Electrode lead wire, 41... Spacer, 42...
...Reaction gas source, 43...Valve, 44...tJF
Air balloon y', 45...pressure detector, 46...
Support plate, 47... Ceramic heater, 48... Substrate to be processed. 49... Electrode lead wire, 50... Power supply. 51... Reflection plate, 52... Reaction chamber. Patent applicant Applied Materials Japan Co., Ltd. Representative Tetsuo Iwasaki Figure 1 Figure 2 Figure 6 Figure 3 Figure 4

Claims (1)

[Claims] ■1 Reactant gas etc. is introduced into a reaction chamber equipped with heating means,
In a chemical vapor deposition processing apparatus for depositing and forming a skin of a desired substance on a substrate to be processed housed in a reaction chamber, the heating means has a resistor laid on the surface layer or near the surface layer of a support portion made of ceramic or the like. A chemical vapor deposition processing apparatus characterized in that the heating body also serves as a support stand that closely supports the substrate to be processed.