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JPS649676A - Drive circuit of semiconductor laser - Google Patents

Drive circuit of semiconductor laser

Info

Publication number
JPS649676A
JPS649676A JP62164673A JP16467387A JPS649676A JP S649676 A JPS649676 A JP S649676A JP 62164673 A JP62164673 A JP 62164673A JP 16467387 A JP16467387 A JP 16467387A JP S649676 A JPS649676 A JP S649676A
Authority
JP
Japan
Prior art keywords
point
rise
driving current
semiconductor laser
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62164673A
Other languages
Japanese (ja)
Inventor
Nobuyuki Hirakata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP62164673A priority Critical patent/JPS649676A/en
Publication of JPS649676A publication Critical patent/JPS649676A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H01S5/06216Pulse modulation or generation

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Communication System (AREA)
  • Control Of Vending Devices And Auxiliary Devices For Vending Devices (AREA)

Abstract

PURPOSE:To inhibit the effect due to the relaxation oscillation of a semiconductor laser and to contrive the improvement of the rise and fall characteristics of an optical output in the driving circuit of the semiconductor laser by a method wherein a transmission line, whose end is opened, is connected in parallel to the laser through a matching resistor. CONSTITUTION:If an input signal Sin rises to a high level from a low level at a point t1, part of a driving current of a semiconductor laser LD is caused to flow in an addition circuit 10. Therefore, the value of the driving current does never become a current value i0 at the rise point t1. As such a rise up to the current value i0 of the driving current appears abruptly at the point t1, the rise of an optical output does never delay. Then, the driving current again rises at a point t2 subsequent to an hour T0 from the the point t1. This is due to that the division of the current to the circuit 10 has been completed and here, if the second rise point t2 of the driving current is made to coincide with the point of drop of the optical output due to the relaxation oscillation of the laser, the second rise of the driving current results in compensating the drop of the photo output. Thereby, the relaxation oscillation can be inhibited.
JP62164673A 1987-07-01 1987-07-01 Drive circuit of semiconductor laser Pending JPS649676A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62164673A JPS649676A (en) 1987-07-01 1987-07-01 Drive circuit of semiconductor laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62164673A JPS649676A (en) 1987-07-01 1987-07-01 Drive circuit of semiconductor laser

Publications (1)

Publication Number Publication Date
JPS649676A true JPS649676A (en) 1989-01-12

Family

ID=15797661

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62164673A Pending JPS649676A (en) 1987-07-01 1987-07-01 Drive circuit of semiconductor laser

Country Status (1)

Country Link
JP (1) JPS649676A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6448481A (en) * 1987-08-19 1989-02-22 Fujitsu Ltd Semiconductor laser modulation control system
JP2007521595A (en) * 2003-06-27 2007-08-02 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Control method of diode device used in optical storage system
JP2010287264A (en) * 2009-06-09 2010-12-24 Sony Corp Laser drive device and laser drive method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6448481A (en) * 1987-08-19 1989-02-22 Fujitsu Ltd Semiconductor laser modulation control system
JP2007521595A (en) * 2003-06-27 2007-08-02 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Control method of diode device used in optical storage system
JP2010287264A (en) * 2009-06-09 2010-12-24 Sony Corp Laser drive device and laser drive method

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