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JPS6489527A - Schottky diode - Google Patents

Schottky diode

Info

Publication number
JPS6489527A
JPS6489527A JP24831387A JP24831387A JPS6489527A JP S6489527 A JPS6489527 A JP S6489527A JP 24831387 A JP24831387 A JP 24831387A JP 24831387 A JP24831387 A JP 24831387A JP S6489527 A JPS6489527 A JP S6489527A
Authority
JP
Japan
Prior art keywords
ring
schottky
insulating film
shaped
schottky junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP24831387A
Other languages
Japanese (ja)
Other versions
JPH0583179B2 (en
Inventor
Takeshi Ogawa
Takeshi Kajimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP24831387A priority Critical patent/JPS6489527A/en
Publication of JPS6489527A publication Critical patent/JPS6489527A/en
Publication of JPH0583179B2 publication Critical patent/JPH0583179B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To obtain a bonding stress-induced deterioration free schottky diode without losing the characteristic thereof by making the schottky diode consist of a ring-shaped schottky junction and an electrode metal which is formed, while being connected to a schottky junction forming metal, on an insulating film surrounded by the ring. CONSTITUTION:An insulating film 2 is formed on a semiconductor substrate 1, the insulating film 2 having a ring-shaped window. A ring-shaped schottky junction 3 is formed while a schottky forming metal is bonded to the semiconductor substrate, which is exposed to the window. An electrode metal 4 which is connected to the ring-shaped schottky forming metal is formed on the insulating film 2 surrounded by the ring 3, extending further towards the outside of the ring 3. For example, by providing the same schottky junction area and electrode area as those of a conventional type, the schottky diode formed according to the constitution has not only the same electric properties but also is free from stresses to be caused at the time of bonding since an electrode metal bonding part is located on the insulating film inside the ring, whereby the schottky junction is free from deterioration.
JP24831387A 1987-09-30 1987-09-30 Schottky diode Granted JPS6489527A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24831387A JPS6489527A (en) 1987-09-30 1987-09-30 Schottky diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24831387A JPS6489527A (en) 1987-09-30 1987-09-30 Schottky diode

Publications (2)

Publication Number Publication Date
JPS6489527A true JPS6489527A (en) 1989-04-04
JPH0583179B2 JPH0583179B2 (en) 1993-11-25

Family

ID=17176216

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24831387A Granted JPS6489527A (en) 1987-09-30 1987-09-30 Schottky diode

Country Status (1)

Country Link
JP (1) JPS6489527A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5746513A (en) * 1994-09-01 1998-05-05 Sensarray Corporation Temperature calibration substrate
JP2003007976A (en) * 2001-06-25 2003-01-10 Mitsubishi Electric Corp Semiconductor device and module device
CN113169224A (en) * 2018-12-27 2021-07-23 京瓷株式会社 Circuit and electric device
CN113196502A (en) * 2018-12-27 2021-07-30 京瓷株式会社 Series diode, circuit and electric device
CN113196502B (en) * 2018-12-27 2024-11-19 京瓷株式会社 Series diode, circuit and electric device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5746513A (en) * 1994-09-01 1998-05-05 Sensarray Corporation Temperature calibration substrate
JP2003007976A (en) * 2001-06-25 2003-01-10 Mitsubishi Electric Corp Semiconductor device and module device
CN113169224A (en) * 2018-12-27 2021-07-23 京瓷株式会社 Circuit and electric device
CN113196502A (en) * 2018-12-27 2021-07-30 京瓷株式会社 Series diode, circuit and electric device
CN113169224B (en) * 2018-12-27 2024-07-23 京瓷株式会社 Circuit and electric device
CN113196502B (en) * 2018-12-27 2024-11-19 京瓷株式会社 Series diode, circuit and electric device

Also Published As

Publication number Publication date
JPH0583179B2 (en) 1993-11-25

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