JPS6484656A - Semiconductor device capacitor - Google Patents
Semiconductor device capacitorInfo
- Publication number
- JPS6484656A JPS6484656A JP62240828A JP24082887A JPS6484656A JP S6484656 A JPS6484656 A JP S6484656A JP 62240828 A JP62240828 A JP 62240828A JP 24082887 A JP24082887 A JP 24082887A JP S6484656 A JPS6484656 A JP S6484656A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- antimonium
- niobium
- arsenic
- tantalum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 239000003990 capacitor Substances 0.000 title abstract 3
- 239000010408 film Substances 0.000 abstract 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 3
- -1 antimonium Chemical compound 0.000 abstract 3
- 229910052785 arsenic Inorganic materials 0.000 abstract 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 3
- 229910052751 metal Inorganic materials 0.000 abstract 3
- 239000002184 metal Substances 0.000 abstract 3
- 229910052758 niobium Inorganic materials 0.000 abstract 3
- 239000010955 niobium Substances 0.000 abstract 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 abstract 3
- 229910052698 phosphorus Inorganic materials 0.000 abstract 3
- 239000011574 phosphorus Substances 0.000 abstract 3
- 229910052715 tantalum Inorganic materials 0.000 abstract 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract 3
- 229910052719 titanium Inorganic materials 0.000 abstract 3
- 239000010936 titanium Substances 0.000 abstract 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- 150000002739 metals Chemical class 0.000 abstract 2
- 239000010409 thin film Substances 0.000 abstract 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Formation Of Insulating Films (AREA)
- Semiconductor Memories (AREA)
Abstract
PURPOSE:To improve a semiconductor device capacitor in a dielectric strength and decrease it in a leakage current by a method wherein a dielectric film doped with phosphorus, antimonium, or arsenic is provided in an oxide film which contains one or more metals selected from tantalum, niobium, or titanium. CONSTITUTION:A dielectric film doped with phosphorus, antimonium, or arsenic is provided in an oxide film, which contains one or more metals selected from tantalum, niobium, or titanium, formed on a semiconductor substrate. The oxide film contains also nitrogen. The dielectric film is formed in such a manner that a tantalum, niobium, or titanium thin film or a nitride thin film formed out of metal selected from them is doped with phosphorus, antimonium, or arsenic and then oxidized. By these processes, a semiconductor device capacitor can be improved in a dielectric strength and also decreased in a leakage current.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62240828A JPS6484656A (en) | 1987-09-28 | 1987-09-28 | Semiconductor device capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62240828A JPS6484656A (en) | 1987-09-28 | 1987-09-28 | Semiconductor device capacitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6484656A true JPS6484656A (en) | 1989-03-29 |
Family
ID=17065299
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62240828A Pending JPS6484656A (en) | 1987-09-28 | 1987-09-28 | Semiconductor device capacitor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6484656A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998019811A1 (en) * | 1996-11-07 | 1998-05-14 | Cabot Corporation | Niobium powders and niobium electrolytic capacitors |
| US6375704B1 (en) | 1999-05-12 | 2002-04-23 | Cabot Corporation | High capacitance niobium powders and electrolytic capacitor anodes |
| US6402066B1 (en) | 1999-03-19 | 2002-06-11 | Cabot Corporation | Method of making niobium and other metal powders |
-
1987
- 1987-09-28 JP JP62240828A patent/JPS6484656A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998019811A1 (en) * | 1996-11-07 | 1998-05-14 | Cabot Corporation | Niobium powders and niobium electrolytic capacitors |
| US6165623A (en) * | 1996-11-07 | 2000-12-26 | Cabot Corporation | Niobium powders and niobium electrolytic capacitors |
| US6420043B1 (en) | 1996-11-07 | 2002-07-16 | Cabot Corporation | Niobium powders and niobium electrolytic capacitors |
| US6402066B1 (en) | 1999-03-19 | 2002-06-11 | Cabot Corporation | Method of making niobium and other metal powders |
| US6706240B2 (en) | 1999-03-19 | 2004-03-16 | Cabot Corporation | Method of making niobium and other metal powders |
| US7156893B2 (en) | 1999-03-19 | 2007-01-02 | Cabot Corporation | Method of making niobium and other metal powders |
| US6375704B1 (en) | 1999-05-12 | 2002-04-23 | Cabot Corporation | High capacitance niobium powders and electrolytic capacitor anodes |
| US6702869B2 (en) | 1999-05-12 | 2004-03-09 | Cabot Corporation | High capacitance niobium powders and electrolytic capacitor anodes |
| US7749297B2 (en) | 1999-05-12 | 2010-07-06 | Cabot Corporation | High capacitance niobium powders and electrolytic capacitor anodes |
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