JPS6472548A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6472548A JPS6472548A JP62228404A JP22840487A JPS6472548A JP S6472548 A JPS6472548 A JP S6472548A JP 62228404 A JP62228404 A JP 62228404A JP 22840487 A JP22840487 A JP 22840487A JP S6472548 A JPS6472548 A JP S6472548A
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- superconducting material
- substrate
- enclosure
- contained
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 239000000463 material Substances 0.000 abstract 6
- 239000000758 substrate Substances 0.000 abstract 4
- 230000015556 catabolic process Effects 0.000 abstract 1
- 239000002826 coolant Substances 0.000 abstract 1
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Containers, Films, And Cooling For Superconductive Devices (AREA)
- Thyristors (AREA)
- Die Bonding (AREA)
Abstract
PURPOSE:To obtain a simple connecting structure to be connected to an exterior with high reliability by providing electrodes made of superconducting material on the surface of a semiconductor element and containing the element in an enclosure having an electrode terminal made of the superconducting material. CONSTITUTION:In a semiconductor device having a semiconductor substrate 1 provided with electrodes 2 on its main surfaces, the electrodes 2 are formed of a superconducting material, and the substrate 1 is contained in an enclosure 5 having electrode terminals 3 made of a superconducting material. For example, electrodes 2 made of a superconducting material are provided on both side surfaces of the substrate 1, and external terminals 3 made of a superconducting material electrically contacted with the parts of the electrodes 3 are extended. The substrate 1 is contained in an enclosure having a cooling medium exit 4, and secured by a support 6. Thus, since the pressure contact of the electrodes of a high breakdown strength and large current semiconductor element is eliminated, its structure is simplified and its reliability is improved.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62228404A JPS6472548A (en) | 1987-09-14 | 1987-09-14 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62228404A JPS6472548A (en) | 1987-09-14 | 1987-09-14 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6472548A true JPS6472548A (en) | 1989-03-17 |
Family
ID=16875935
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62228404A Pending JPS6472548A (en) | 1987-09-14 | 1987-09-14 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6472548A (en) |
-
1987
- 1987-09-14 JP JP62228404A patent/JPS6472548A/en active Pending
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