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JPS6461979A - Formation of protective film for semiconductor light-emitting element - Google Patents

Formation of protective film for semiconductor light-emitting element

Info

Publication number
JPS6461979A
JPS6461979A JP22063987A JP22063987A JPS6461979A JP S6461979 A JPS6461979 A JP S6461979A JP 22063987 A JP22063987 A JP 22063987A JP 22063987 A JP22063987 A JP 22063987A JP S6461979 A JPS6461979 A JP S6461979A
Authority
JP
Japan
Prior art keywords
layer
film
oxygen
clad layer
protective film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22063987A
Other languages
Japanese (ja)
Inventor
Isao Hino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP22063987A priority Critical patent/JPS6461979A/en
Publication of JPS6461979A publication Critical patent/JPS6461979A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0281—Coatings made of semiconductor materials

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To contrive improvement both in reliability and efficiency of the title protective film utilizing the property of crystal growth and the property of material by a method wherein a III-V compound semiconductor layer, having aluminum as a compositional ingredient is formed on a light-emission surface in a vapor phase atmosphere containing the prescribed oxygen by conducting a vapor growth method using an organic metal as raw material. CONSTITUTION:In the case of an AlGaInP visible light semiconductor laser, an n-(Al0.4Ga0.6)0.5P clad layer 2, a Ga0.5In0.5P active layer 3, a p-(Al0.4Ga0.6)0.5 In0.5P clad layer 2, a Ga0.5In0.5P active layer 3, a p-(Al0.4Ga0.6)0.5In0.5P clad layer 4, and a p-GaAs cap layer 5 are formed successively on an n-GaAs substrate 1, for example. Then, an SiO2 film and the like is patterned and used as a mask, the grown layers are selectively etched, and a laser resonator end face is formed. Subsequently, using an MOVPE method, oxygen is mixed into raw gas, an Al0.5In0.5P film 7 is selectively grown on the end face part while maintaining the state in which oxygen of 0.1-100ppm is present in the growing atmosphere. Through these procedures, the surface excluding the n-GaAs cap layer 5 is covered by a highly resistant Al0.5In0.5P film 7.
JP22063987A 1987-09-02 1987-09-02 Formation of protective film for semiconductor light-emitting element Pending JPS6461979A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22063987A JPS6461979A (en) 1987-09-02 1987-09-02 Formation of protective film for semiconductor light-emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22063987A JPS6461979A (en) 1987-09-02 1987-09-02 Formation of protective film for semiconductor light-emitting element

Publications (1)

Publication Number Publication Date
JPS6461979A true JPS6461979A (en) 1989-03-08

Family

ID=16754120

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22063987A Pending JPS6461979A (en) 1987-09-02 1987-09-02 Formation of protective film for semiconductor light-emitting element

Country Status (1)

Country Link
JP (1) JPS6461979A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0897506A (en) * 1994-09-28 1996-04-12 Sharp Corp Manufacture of end face growth window type semiconductor laser element
US8232566B2 (en) 2009-05-04 2012-07-31 Lg Innotek Co., Ltd. Light emitting device, package, and system

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0897506A (en) * 1994-09-28 1996-04-12 Sharp Corp Manufacture of end face growth window type semiconductor laser element
US8232566B2 (en) 2009-05-04 2012-07-31 Lg Innotek Co., Ltd. Light emitting device, package, and system

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