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JPS6453445A - Buried storage plate memory cell - Google Patents

Buried storage plate memory cell

Info

Publication number
JPS6453445A
JPS6453445A JP62336792A JP33679287A JPS6453445A JP S6453445 A JPS6453445 A JP S6453445A JP 62336792 A JP62336792 A JP 62336792A JP 33679287 A JP33679287 A JP 33679287A JP S6453445 A JPS6453445 A JP S6453445A
Authority
JP
Japan
Prior art keywords
trench
core
capacitor
region
polycrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62336792A
Other languages
Japanese (ja)
Inventor
Chin Dejie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Semiconductor Inc
Original Assignee
Samsung Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Semiconductor Inc filed Critical Samsung Semiconductor Inc
Publication of JPS6453445A publication Critical patent/JPS6453445A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/33—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor extending under the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/34—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the transistor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/39—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H10D1/665—Trench conductor-insulator-semiconductor capacitors, e.g. trench MOS capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: To provide a transistor storage cell which is highly immune to noises, without needing an epitaxial layer by facing the surface of a polycrystalline Si core formed in a trench, perpendicular to a substrate surface in a p-type region formed round the trench through a dielectric layer. CONSTITUTION: A capacitor is formed in a cylindrical trench 11 approximately vertical to the plane of a semiconductor substrate surface. The vapor phase diffusion is applied to form a p+-region 13 contg. B at a high concn. in the trench 11. The reign 13 forms one electrode plate of the capacitor, while a polycrystalline Si core 14 in the trench 11 forms the other electrode plate. The core 14 is isolated from the region 13 through a thin dielectric layer 15 of Si dioxide or mixture of Si nitride and Si dioxide. Charge storage occurs in the core 14 at a deep part 19 of the trench. This structure eliminates need for the use of an epitaxial layer and reduces the cost of a MOS semiconductor device, using the trench-type storage capacitor.
JP62336792A 1987-01-06 1987-12-28 Buried storage plate memory cell Pending JPS6453445A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US74387A 1987-01-06 1987-01-06

Publications (1)

Publication Number Publication Date
JPS6453445A true JPS6453445A (en) 1989-03-01

Family

ID=21692832

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62336792A Pending JPS6453445A (en) 1987-01-06 1987-12-28 Buried storage plate memory cell

Country Status (6)

Country Link
JP (1) JPS6453445A (en)
KR (1) KR880009439A (en)
DE (1) DE3744375A1 (en)
FR (1) FR2609350A1 (en)
GB (1) GB2199696B (en)
NL (1) NL8800007A (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5200354A (en) * 1988-07-22 1993-04-06 Hyundai Electronics Industries Co. Ltd. Method for manufacturing dynamic random access memory cell
KR910008830B1 (en) * 1988-08-18 1991-10-21 현대전자산업 주식회사 Trench sidewall doping method using oxide and nitride walls and semiconductor device
US5182224A (en) * 1988-09-22 1993-01-26 Hyundai Electronics Industries Co., Ltd. Method of making dynamic random access memory cell having a SDHT structure
KR910013554A (en) * 1989-12-08 1991-08-08 김광호 Semiconductor device and manufacturing method thereof
JP2994110B2 (en) * 1991-09-09 1999-12-27 株式会社東芝 Semiconductor storage device
US5528062A (en) * 1992-06-17 1996-06-18 International Business Machines Corporation High-density DRAM structure on soi
CN105957902A (en) * 2016-07-20 2016-09-21 无锡宏纳科技有限公司 Production method of deep-groove silicon capacitor with larger capacitance value

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0169938B1 (en) * 1983-12-15 1989-03-29 Kabushiki Kaisha Toshiba Semiconductor memory device having trenched capacitor
JPS60152058A (en) * 1984-01-20 1985-08-10 Toshiba Corp Semiconductor memory device
JPS6187358A (en) * 1984-10-05 1986-05-02 Nec Corp Semiconductor storage device and its manufacturing method
CN1004734B (en) * 1984-12-07 1989-07-05 得克萨斯仪器公司 Dynamic random access memory unit (dram) and production method
DE3681490D1 (en) * 1985-04-01 1991-10-24 Nec Corp DYNAMIC MEMORY ARRANGEMENT WITH OPTIONAL ACCESS WITH A VARIETY OF INTRANSISTOR CELLS.
EP0236089B1 (en) * 1986-03-03 1992-08-05 Fujitsu Limited Dynamic random access memory having trench capacitor

Also Published As

Publication number Publication date
DE3744375A1 (en) 1988-07-14
GB2199696B (en) 1990-11-14
GB2199696A (en) 1988-07-13
GB8729623D0 (en) 1988-02-03
NL8800007A (en) 1988-08-01
FR2609350A1 (en) 1988-07-08
KR880009439A (en) 1988-09-15

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