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JPS6452062A - Ionic source - Google Patents

Ionic source

Info

Publication number
JPS6452062A
JPS6452062A JP20800387A JP20800387A JPS6452062A JP S6452062 A JPS6452062 A JP S6452062A JP 20800387 A JP20800387 A JP 20800387A JP 20800387 A JP20800387 A JP 20800387A JP S6452062 A JPS6452062 A JP S6452062A
Authority
JP
Japan
Prior art keywords
formation chamber
plasma formation
ions
magnetic flux
pulling out
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20800387A
Other languages
Japanese (ja)
Inventor
Shigeto Matsuoka
Kenichi Ono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP20800387A priority Critical patent/JPS6452062A/en
Priority to PCT/JP1987/000695 priority patent/WO1988002546A1/en
Priority to EP87906208A priority patent/EP0283519B1/en
Priority to DE3789618T priority patent/DE3789618T2/en
Priority to US07/198,500 priority patent/US5022977A/en
Publication of JPS6452062A publication Critical patent/JPS6452062A/en
Pending legal-status Critical Current

Links

Landscapes

  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE:To stably form metallic ions in a long time by forming a mirror field with pairs of magnets in a plasma formation chamber and furthermore providing both a means for allowing a magnetic flux to be leaked on the inside surface of a target and a means for selectively pulling out ions. CONSTITUTION:A mechanism 14 for pulling out ions which consists of two sheets of perforated grids for pulling out ions is provided to the end part 17 of a plasma formation chamber joined to the plasma formation chamber 11 constituting an ionic source and furthermore a base plate is put to the outside thereof in the direction of a magnetic flux due to electromagnets 8. The electromagnets 8 more than a pair are circularly provided to both ends of the outer periphery of the plasma formation chamber 11 and intensity of the generating magnetic field is decided so that a trough is formed in the plasma formation chamber 11. At least a pair of ring-shaped permanent magnets 16 in which polarities are reversed are provided to the outsides of upper and lower both ends of a cylindrical target 13 surrounding plasma so that a magnetic flux is allowed to be leaked on the inside surface of the target 13. Thereby ions can be pulled out at high current density.
JP20800387A 1986-09-29 1987-08-21 Ionic source Pending JPS6452062A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP20800387A JPS6452062A (en) 1987-08-21 1987-08-21 Ionic source
PCT/JP1987/000695 WO1988002546A1 (en) 1986-09-29 1987-09-24 Ion generation apparatus, thin film formation apparatus using the ion generation apparatus, and ion source
EP87906208A EP0283519B1 (en) 1986-09-29 1987-09-24 Ion generation apparatus, thin film formation apparatus using the ion generation apparatus, and ion source
DE3789618T DE3789618T2 (en) 1986-09-29 1987-09-24 ION GENERATING APPARATUS, THIN FILM FORMING DEVICE USING THE ION GENERATING APPARATUS AND ION SOURCE.
US07/198,500 US5022977A (en) 1986-09-29 1987-09-24 Ion generation apparatus and thin film forming apparatus and ion source utilizing the ion generation apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20800387A JPS6452062A (en) 1987-08-21 1987-08-21 Ionic source

Publications (1)

Publication Number Publication Date
JPS6452062A true JPS6452062A (en) 1989-02-28

Family

ID=16549059

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20800387A Pending JPS6452062A (en) 1986-09-29 1987-08-21 Ionic source

Country Status (1)

Country Link
JP (1) JPS6452062A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014522551A (en) * 2011-06-09 2014-09-04 コリア ベーシック サイエンス インスティテュート Plasma generating source including belt-type magnet and thin film deposition system using the same
US8924788B2 (en) 2010-06-28 2014-12-30 Intel Corporation Replaying architectural execution with a probeless trace capture

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6187869A (en) * 1984-10-05 1986-05-06 Hitachi Ltd Sputter device
JPS62167878A (en) * 1985-12-09 1987-07-24 Shimadzu Corp Ecr sputtering apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6187869A (en) * 1984-10-05 1986-05-06 Hitachi Ltd Sputter device
JPS62167878A (en) * 1985-12-09 1987-07-24 Shimadzu Corp Ecr sputtering apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8924788B2 (en) 2010-06-28 2014-12-30 Intel Corporation Replaying architectural execution with a probeless trace capture
JP2014522551A (en) * 2011-06-09 2014-09-04 コリア ベーシック サイエンス インスティテュート Plasma generating source including belt-type magnet and thin film deposition system using the same

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