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JPS6439372A - Thin film forming device - Google Patents

Thin film forming device

Info

Publication number
JPS6439372A
JPS6439372A JP19601287A JP19601287A JPS6439372A JP S6439372 A JPS6439372 A JP S6439372A JP 19601287 A JP19601287 A JP 19601287A JP 19601287 A JP19601287 A JP 19601287A JP S6439372 A JPS6439372 A JP S6439372A
Authority
JP
Japan
Prior art keywords
grid
counter electrode
thin film
potential
deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19601287A
Other languages
Japanese (ja)
Inventor
Mikio Kinoshita
Wasaburo Ota
Tadao Hashirakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP19601287A priority Critical patent/JPS6439372A/en
Priority to US07/228,451 priority patent/US4960072A/en
Publication of JPS6439372A publication Critical patent/JPS6439372A/en
Priority to US07/597,331 priority patent/US5112466A/en
Pending legal-status Critical Current

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  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To form a uniform thin film on a large-area substrate to be deposited having poor conductivity by arranging a movable second grid in the vicinity of a counter electrode holding the substrate, making the potential of a first grid positive, and making the potential of the second grid low. CONSTITUTION:A vaporization source 8 and the counter electrode 5 holding the substrate 100 to be deposited are provided in a vacuum vessel into which an active gas and/or an inert gas are to be introduced. The first grid 6A for passing a vaporization substance and a thermoelectron generating grid 7 are arranged between the vaporization source 8 and the counter electrode 5. The second grid 6B for passing the vaporization substance is provided between the first grid 6A and the counter electrode 5 in the vicinity of the counter electrode 5, and made rectilineally movable in the direction crossing an electrode wire. Under such a constitution, the potential of the first grid 6A is made positive with respect to the counter electrode 5, the potential of the second grid 6B is made lower than the first grid 6A, and a thin film is formed. By this method, a homogeneous and good-quality thin film is formed even on the large- area substrate 100 to be deposited.
JP19601287A 1987-08-05 1987-08-05 Thin film forming device Pending JPS6439372A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP19601287A JPS6439372A (en) 1987-08-05 1987-08-05 Thin film forming device
US07/228,451 US4960072A (en) 1987-08-05 1988-08-05 Apparatus for forming a thin film
US07/597,331 US5112466A (en) 1987-08-05 1990-09-14 Apparatus for forming a thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19601287A JPS6439372A (en) 1987-08-05 1987-08-05 Thin film forming device

Publications (1)

Publication Number Publication Date
JPS6439372A true JPS6439372A (en) 1989-02-09

Family

ID=16350760

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19601287A Pending JPS6439372A (en) 1987-08-05 1987-08-05 Thin film forming device

Country Status (1)

Country Link
JP (1) JPS6439372A (en)

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