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JPS6439728A - Manufacture of semiconductor by plasma reaction - Google Patents

Manufacture of semiconductor by plasma reaction

Info

Publication number
JPS6439728A
JPS6439728A JP19683387A JP19683387A JPS6439728A JP S6439728 A JPS6439728 A JP S6439728A JP 19683387 A JP19683387 A JP 19683387A JP 19683387 A JP19683387 A JP 19683387A JP S6439728 A JPS6439728 A JP S6439728A
Authority
JP
Japan
Prior art keywords
film
insulating film
melted
substrate
accelerated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19683387A
Other languages
Japanese (ja)
Inventor
Eisuke Tanaka
Shigeru Harada
Masanori Obata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP19683387A priority Critical patent/JPS6439728A/en
Publication of JPS6439728A publication Critical patent/JPS6439728A/en
Pending legal-status Critical Current

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  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To prevent a coating film from exfoliating and to prevent etching gas from invading by a film having a small porosity by providing an insulating film having high density and covering an RF oscillation electrode substrate and the film having small porosity to cover the insulating film. CONSTITUTION:A ceramic sintered rod is melted in an oxygen-acetylene flame, its melted droplet is accelerated by an air jet, and injected. The injected droplet is cooled on an RF oscillation electrode substrate 1, closely brought into contact with the substrate while contracting to form an insulating film 6. Then, a conductive film 7 and an insulating film 8 are melted in a high temperature and high speed plasma jet generated by ionizing N2, H2, inert gas by feeding conductive or insulative material powder to be coated, accelerated and then collided with the substrate 1 to form a film.
JP19683387A 1987-08-05 1987-08-05 Manufacture of semiconductor by plasma reaction Pending JPS6439728A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19683387A JPS6439728A (en) 1987-08-05 1987-08-05 Manufacture of semiconductor by plasma reaction

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19683387A JPS6439728A (en) 1987-08-05 1987-08-05 Manufacture of semiconductor by plasma reaction

Publications (1)

Publication Number Publication Date
JPS6439728A true JPS6439728A (en) 1989-02-10

Family

ID=16364426

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19683387A Pending JPS6439728A (en) 1987-08-05 1987-08-05 Manufacture of semiconductor by plasma reaction

Country Status (1)

Country Link
JP (1) JPS6439728A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01120328U (en) * 1988-02-08 1989-08-15
JPH07176524A (en) * 1993-11-05 1995-07-14 Tokyo Electron Ltd Material for vacuum processing device and manufacture
WO1999067819A1 (en) * 1998-06-22 1999-12-29 Sony Chemicals Corp. Thermocompression bonding device and bonding head thereof
US6783863B2 (en) 1999-12-10 2004-08-31 Tocalo Co., Ltd. Plasma processing container internal member and production method thereof
US8053058B2 (en) 2005-09-08 2011-11-08 Tocalo Co., Ltd. Spray-coated member having an excellent resistance to plasma erosion and method of producing the same
US8231986B2 (en) 2005-08-22 2012-07-31 Tocalo Co., Ltd. Spray coating member having excellent injury resistance and so on and method for producing the same

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01120328U (en) * 1988-02-08 1989-08-15
JPH07176524A (en) * 1993-11-05 1995-07-14 Tokyo Electron Ltd Material for vacuum processing device and manufacture
WO1999067819A1 (en) * 1998-06-22 1999-12-29 Sony Chemicals Corp. Thermocompression bonding device and bonding head thereof
US6783863B2 (en) 1999-12-10 2004-08-31 Tocalo Co., Ltd. Plasma processing container internal member and production method thereof
US6884516B2 (en) * 1999-12-10 2005-04-26 Tocalo Co., Ltd. Internal member for plasma-treating vessel and method of producing the same
US8231986B2 (en) 2005-08-22 2012-07-31 Tocalo Co., Ltd. Spray coating member having excellent injury resistance and so on and method for producing the same
US8053058B2 (en) 2005-09-08 2011-11-08 Tocalo Co., Ltd. Spray-coated member having an excellent resistance to plasma erosion and method of producing the same

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