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JPS6427635U - - Google Patents

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Publication number
JPS6427635U
JPS6427635U JP12267187U JP12267187U JPS6427635U JP S6427635 U JPS6427635 U JP S6427635U JP 12267187 U JP12267187 U JP 12267187U JP 12267187 U JP12267187 U JP 12267187U JP S6427635 U JPS6427635 U JP S6427635U
Authority
JP
Japan
Prior art keywords
sensor chip
semiconductor substrate
semiconductor
bonding glass
diaphragm
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12267187U
Other languages
English (en)
Other versions
JPH064301Y2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1987122671U priority Critical patent/JPH064301Y2/ja
Publication of JPS6427635U publication Critical patent/JPS6427635U/ja
Application granted granted Critical
Publication of JPH064301Y2 publication Critical patent/JPH064301Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Measuring Fluid Pressure (AREA)

Description

【図面の簡単な説明】
第１図は本考案の一実施例の要部構成説明図、
第２図は従来より一般に使用されている従来例の
構成説明図である。 １……センサチツプ、１１……凹部、１２……
ダイアフラム、１３……半導体ピエゾ抵抗ゲージ
、１４……基準室、２ａ……半導体基板、２１…
…第一接合ガラス層、３……支持部、３１……第
二接合ガラス層、４……ハウジング。

Claims (1)

  1. 【実用新案登録請求の範囲】 半導体からなるセンサチツプと、該センサチツ
    プにダイアフラムを形成する凹部と、前記ダイア
    フラムに設けられた半導体ピエゾ抵抗ゲージと、
    前記センサチツプに一面側が第１接合ガラス層を
    介して該センサチツプと同一の面方位で同一の結
    晶方向で接合され前記凹部と基準室を構成する半
    導体基板と、前記半導体基板の他面側に第２接合
    ガラス層を介して取付けられ金属よりなる筒状の
    支持部と、該支持部の他端が取付けられる金属よ
    りなるハウジングとを具備し、 前記センサチツプ及び前記半導体基板と前記支
    持部との熱膨脹係数が極めて近くなるような支持
    部材を選択し、 前記センサチツプ及び前記半導体基板と前記第
    １、第２接合ガラス層との熱膨脹係数が極めて近
    くなるようなガラス材を選択してなる半導体圧力
    ンサ。
JP1987122671U 1987-08-11 1987-08-11 半導体圧力センサ Expired - Lifetime JPH064301Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1987122671U JPH064301Y2 (ja) 1987-08-11 1987-08-11 半導体圧力センサ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1987122671U JPH064301Y2 (ja) 1987-08-11 1987-08-11 半導体圧力センサ

Publications (2)

Publication Number Publication Date
JPS6427635U true JPS6427635U (ja) 1989-02-17
JPH064301Y2 JPH064301Y2 (ja) 1994-02-02

Family

ID=31370817

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1987122671U Expired - Lifetime JPH064301Y2 (ja) 1987-08-11 1987-08-11 半導体圧力センサ

Country Status (1)

Country Link
JP (1) JPH064301Y2 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006220519A (ja) * 2005-02-10 2006-08-24 Canon Anelva Technix Corp 隔膜型圧力センサ
US7476695B2 (en) 2004-03-16 2009-01-13 Nissan Chemical Industries, Ltd. Modified stannic oxide-zirconium oxide complex sol and method for preparing same
JP2013506841A (ja) * 2009-10-01 2013-02-28 ローズマウント インコーポレイテッド 圧力センサマウントを備えた圧力トランスミッタ

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10151647B2 (en) * 2013-06-19 2018-12-11 Honeywell International Inc. Integrated SOI pressure sensor having silicon stress isolation member

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50105285A (ja) * 1974-01-25 1975-08-19
JPS54138384A (en) * 1978-04-19 1979-10-26 Mitsubishi Electric Corp Semiconductor pressure converter
JPS57171235A (en) * 1981-04-15 1982-10-21 Toshiba Corp Semiconductor pressure converter

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50105285A (ja) * 1974-01-25 1975-08-19
JPS54138384A (en) * 1978-04-19 1979-10-26 Mitsubishi Electric Corp Semiconductor pressure converter
JPS57171235A (en) * 1981-04-15 1982-10-21 Toshiba Corp Semiconductor pressure converter

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7476695B2 (en) 2004-03-16 2009-01-13 Nissan Chemical Industries, Ltd. Modified stannic oxide-zirconium oxide complex sol and method for preparing same
JP2006220519A (ja) * 2005-02-10 2006-08-24 Canon Anelva Technix Corp 隔膜型圧力センサ
JP4683618B2 (ja) * 2005-02-10 2011-05-18 キヤノンアネルバ株式会社 隔膜型圧力センサ及びその製造方法
JP2013506841A (ja) * 2009-10-01 2013-02-28 ローズマウント インコーポレイテッド 圧力センサマウントを備えた圧力トランスミッタ

Also Published As

Publication number Publication date
JPH064301Y2 (ja) 1994-02-02

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