Nothing Special   »   [go: up one dir, main page]

JPS642370A - Field-effect type semiconductor device and manufacture thereof - Google Patents

Field-effect type semiconductor device and manufacture thereof

Info

Publication number
JPS642370A
JPS642370A JP15810487A JP15810487A JPS642370A JP S642370 A JPS642370 A JP S642370A JP 15810487 A JP15810487 A JP 15810487A JP 15810487 A JP15810487 A JP 15810487A JP S642370 A JPS642370 A JP S642370A
Authority
JP
Japan
Prior art keywords
films
concentration impurity
layers
electrode
sio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15810487A
Other languages
Japanese (ja)
Other versions
JPH012370A (en
JPH081911B2 (en
Inventor
Mikio Kanamori
Masaoki Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62158104A priority Critical patent/JPH081911B2/en
Publication of JPS642370A publication Critical patent/JPS642370A/en
Publication of JPH012370A publication Critical patent/JPH012370A/en
Publication of JPH081911B2 publication Critical patent/JPH081911B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To lower series parasitic resistance by forming source-drain by using two layers consisting of a low-concentration impurity layer and a high- concentration impurity layer.
CONSTITUTION: Si ions are implanted selectively onto a semi-insulating GaAs substrate 6 to shape an operating layer 3. A gate electrode 1 composed of WSi is formed. SiO2 films 7 are shaped to the specified sections of the substrate 6, and low-concentration impurity layers 4a are formed into source-drain regions, employing the electrode 1 and the films 7 as masks. The films 7 are removed, SiO2 films are applied onto the whole surface, and the SiO2 films 5 are left only on the side face of the electrode 1. Resist films 8 are shaped to the specified sections, and high-concentration impurity layers 4b are formed, using the electrode 1, the films 5 and the resist films 8 as masks. Accordingly, source-drain are formed by employing layers of two kinds of the low-concentration impurity layers and high-concentration impurity layers, thus lowering series parasitic resistance without increasing a short channel effect.
COPYRIGHT: (C)1989,JPO&Japio
JP62158104A 1987-06-24 1987-06-24 Field effect type semiconductor device and method of manufacturing the same Expired - Lifetime JPH081911B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62158104A JPH081911B2 (en) 1987-06-24 1987-06-24 Field effect type semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62158104A JPH081911B2 (en) 1987-06-24 1987-06-24 Field effect type semiconductor device and method of manufacturing the same

Publications (3)

Publication Number Publication Date
JPS642370A true JPS642370A (en) 1989-01-06
JPH012370A JPH012370A (en) 1989-01-06
JPH081911B2 JPH081911B2 (en) 1996-01-10

Family

ID=15664393

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62158104A Expired - Lifetime JPH081911B2 (en) 1987-06-24 1987-06-24 Field effect type semiconductor device and method of manufacturing the same

Country Status (1)

Country Link
JP (1) JPH081911B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5584718A (en) * 1993-12-29 1996-12-17 Mitsumi Electric Co., Ltd. Branch-connection connector

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59207669A (en) * 1983-05-10 1984-11-24 Mitsubishi Electric Corp Manufacture of field effect transistor
JPS60165764A (en) * 1984-02-08 1985-08-28 Nec Corp Manufacture of compound semiconductor device
JPS63281473A (en) * 1987-05-13 1988-11-17 Nec Corp Field-effect semiconductor device and manufacture thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59207669A (en) * 1983-05-10 1984-11-24 Mitsubishi Electric Corp Manufacture of field effect transistor
JPS60165764A (en) * 1984-02-08 1985-08-28 Nec Corp Manufacture of compound semiconductor device
JPS63281473A (en) * 1987-05-13 1988-11-17 Nec Corp Field-effect semiconductor device and manufacture thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5584718A (en) * 1993-12-29 1996-12-17 Mitsumi Electric Co., Ltd. Branch-connection connector

Also Published As

Publication number Publication date
JPH081911B2 (en) 1996-01-10

Similar Documents

Publication Publication Date Title
EP0085916A3 (en) Method of fabricating field effect transistors
JPS55132072A (en) Mos semiconductor device
JPS57192063A (en) Manufacture of semiconductor device
JPS5650535A (en) Manufacture of semiconductor device
JPS642370A (en) Field-effect type semiconductor device and manufacture thereof
JPS5556663A (en) Insulating-gate type field-effect transistor
JPS6484659A (en) Manufacture of semiconductor device
JPS5583267A (en) Method of fabricating semiconductor device
JPS56126973A (en) Mos field effect transistor
JPS57118662A (en) Manufacture of semiconductor device
JPS54117691A (en) Production of insulating gate-type semiconductor device
JPS5621370A (en) Mos transistor
JPS5739579A (en) Mos semiconductor device and manufacture thereof
JPS6410672A (en) Vertical mosfet
JPS5561069A (en) Manufacture of semiconductor device
JPS57143854A (en) Complementary type metal oxide semiconductor device and its manufacture
JPS56126957A (en) Manufacture of semiconductor device
JPS56147447A (en) Manufacture of mosic
JPS57184248A (en) Manufacture of semiconductor device
JPS56104470A (en) Semiconductor device and manufacture thereof
JPS54124686A (en) Mos transistor and its production
JPS5615080A (en) Mos type field effect transistor
JPS6424459A (en) Semiconductor element of mis structure and manufacture thereof
JPS5737882A (en) Compound semiconductor device and production thereof
JPS6432677A (en) Manufacture of field-effect transistor