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JPS6422072A - Manufacture of pin type semiconductor photodetector - Google Patents

Manufacture of pin type semiconductor photodetector

Info

Publication number
JPS6422072A
JPS6422072A JP62178204A JP17820487A JPS6422072A JP S6422072 A JPS6422072 A JP S6422072A JP 62178204 A JP62178204 A JP 62178204A JP 17820487 A JP17820487 A JP 17820487A JP S6422072 A JPS6422072 A JP S6422072A
Authority
JP
Japan
Prior art keywords
layer
inp
light absorbing
manufacture
type semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62178204A
Other languages
Japanese (ja)
Inventor
Kikuo Makita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62178204A priority Critical patent/JPS6422072A/en
Publication of JPS6422072A publication Critical patent/JPS6422072A/en
Pending legal-status Critical Current

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  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To control the generation of hillock, and enable the uniform layer thickness in a wafer, by forming a light absorbing layer and an InP window layer on an InP substrate having a face orientation inclined at a specific angle to (100), in the manufacture of a PIN type semiconductor photodetector. CONSTITUTION:On InP substrate having a face orientation inclined at an angle of 0.2-0.5 degree to (100) is used for a substrate 1. On the InP substrate 1, are formed an InP buffer layer 2, an InxGa1-xAs(x=0.53) light absorbing layer 3, and an InP window layer 4, and, by diffusion method, a P<+> region 5 is formed. This multi-layer structure is grown by hydride vapor growth. Finally a P<+> side electrode 8 and an N<+> side electrode 9 are arranged, after an SiO2 film 7 is formed. The position of a P-N junction 6 is desirable to be a depth of about 0.1mum below the light absorbing layer 3 surface. The diffusion method is often used for forming the P<+> region 5, and the position of the P-N junction 6 is adjusted by controlling the diffusion time. However, the allowance of this art is small.
JP62178204A 1987-07-17 1987-07-17 Manufacture of pin type semiconductor photodetector Pending JPS6422072A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62178204A JPS6422072A (en) 1987-07-17 1987-07-17 Manufacture of pin type semiconductor photodetector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62178204A JPS6422072A (en) 1987-07-17 1987-07-17 Manufacture of pin type semiconductor photodetector

Publications (1)

Publication Number Publication Date
JPS6422072A true JPS6422072A (en) 1989-01-25

Family

ID=16044395

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62178204A Pending JPS6422072A (en) 1987-07-17 1987-07-17 Manufacture of pin type semiconductor photodetector

Country Status (1)

Country Link
JP (1) JPS6422072A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5647917A (en) * 1994-09-08 1997-07-15 Sumitomo Electric Industries, Ltd. Epitaxy for growing compound semiconductors and an InP substrate for epitaxial growth

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61274313A (en) * 1985-05-29 1986-12-04 Mitsubishi Electric Corp Semiconductor device
JPS6247119A (en) * 1985-08-27 1987-02-28 Fujitsu Ltd Manufacture of semiconductor device
JPS6269687A (en) * 1985-09-24 1987-03-30 Toshiba Corp Semiconductor photodetector
JPS62150890A (en) * 1985-12-25 1987-07-04 Hitachi Ltd Semiconductor photo detector

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61274313A (en) * 1985-05-29 1986-12-04 Mitsubishi Electric Corp Semiconductor device
JPS6247119A (en) * 1985-08-27 1987-02-28 Fujitsu Ltd Manufacture of semiconductor device
JPS6269687A (en) * 1985-09-24 1987-03-30 Toshiba Corp Semiconductor photodetector
JPS62150890A (en) * 1985-12-25 1987-07-04 Hitachi Ltd Semiconductor photo detector

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5647917A (en) * 1994-09-08 1997-07-15 Sumitomo Electric Industries, Ltd. Epitaxy for growing compound semiconductors and an InP substrate for epitaxial growth

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