Nothing Special   »   [go: up one dir, main page]

JPS6412524A - Vertical type diffusion cvd device - Google Patents

Vertical type diffusion cvd device

Info

Publication number
JPS6412524A
JPS6412524A JP16955787A JP16955787A JPS6412524A JP S6412524 A JPS6412524 A JP S6412524A JP 16955787 A JP16955787 A JP 16955787A JP 16955787 A JP16955787 A JP 16955787A JP S6412524 A JPS6412524 A JP S6412524A
Authority
JP
Japan
Prior art keywords
boat
reaction tube
tube
wafer
flange
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16955787A
Other languages
Japanese (ja)
Inventor
Akio Shimizu
Shigeru Takeda
Hideo Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Electric Corp
Original Assignee
Kokusai Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Electric Corp filed Critical Kokusai Electric Corp
Priority to JP16955787A priority Critical patent/JPS6412524A/en
Publication of JPS6412524A publication Critical patent/JPS6412524A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To realize a high-quality film formation in a high through-put and to contrive a reduction in power consumption by a method wherein a semiconductor water is introduced and sealed in the lower part of a reaction tube, then is transferred in the upper part of the reaction tube and again is taken out via the process reverse to the above process. CONSTITUTION:A boat 4 placed on a boat supporting member 5 is made to ascend by the synchronous ascending operation of airtight flanges 6 and 8 of vertically moving mechanisms 7 and 9 and is introduced in a lower part 3b of a reaction tube 3, and the airtight flange 6 is abutted on a reaction tube sealing flange 11 to seal the reaction tube 3. A semiconductor wafer on the boat 4 is heated at low temperature in the lower part 3b. Then, after the gas in the tube 3 is substituted, the flange 8 only is elevated the boat 4 is transferred into an upper part 3a of the tube 3, is heated at high temperature and the wafer on the boat 4 is treated. After that, the wafer is cooled to a temperature which has no effect on the wafer in the air as well via the operating process reverse to the above operating process and the boat 4 is taken out outside of the tube 3.
JP16955787A 1987-07-06 1987-07-06 Vertical type diffusion cvd device Pending JPS6412524A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16955787A JPS6412524A (en) 1987-07-06 1987-07-06 Vertical type diffusion cvd device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16955787A JPS6412524A (en) 1987-07-06 1987-07-06 Vertical type diffusion cvd device

Publications (1)

Publication Number Publication Date
JPS6412524A true JPS6412524A (en) 1989-01-17

Family

ID=15888670

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16955787A Pending JPS6412524A (en) 1987-07-06 1987-07-06 Vertical type diffusion cvd device

Country Status (1)

Country Link
JP (1) JPS6412524A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5252807A (en) * 1990-07-02 1993-10-12 George Chizinsky Heated plate rapid thermal processor
US6002109A (en) * 1995-07-10 1999-12-14 Mattson Technology, Inc. System and method for thermal processing of a semiconductor substrate
US6133550A (en) * 1996-03-22 2000-10-17 Sandia Corporation Method and apparatus for thermal processing of semiconductor substrates
US6198074B1 (en) 1996-09-06 2001-03-06 Mattson Technology, Inc. System and method for rapid thermal processing with transitional heater

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5252807A (en) * 1990-07-02 1993-10-12 George Chizinsky Heated plate rapid thermal processor
US6002109A (en) * 1995-07-10 1999-12-14 Mattson Technology, Inc. System and method for thermal processing of a semiconductor substrate
US6403925B1 (en) 1995-07-10 2002-06-11 Mattson Technology, Inc. System and method for thermal processing of a semiconductor substrate
US6133550A (en) * 1996-03-22 2000-10-17 Sandia Corporation Method and apparatus for thermal processing of semiconductor substrates
US6355909B1 (en) 1996-03-22 2002-03-12 Sandia Corporation Method and apparatus for thermal processing of semiconductor substrates
US6198074B1 (en) 1996-09-06 2001-03-06 Mattson Technology, Inc. System and method for rapid thermal processing with transitional heater
US6331697B2 (en) 1996-09-06 2001-12-18 Mattson Technology Inc. System and method for rapid thermal processing

Similar Documents

Publication Publication Date Title
JPS6479587A (en) Vertical type heat treating processor and method thereof
GB1395207A (en) Heat pipe
JPS6412524A (en) Vertical type diffusion cvd device
JPS5240059A (en) Process for production of semiconductor device
GB1515318A (en) Diffusion-doping semiconductors
JPS5676297A (en) Fermentation apparatus for sewage sludge
JPS5632304A (en) Metal oxide film forming method
JPH04202091A (en) Vapor growth device of compound semiconductor
JPS5276761A (en) Manufacturing method of heat pipe
JPS6468920A (en) Heat treatment of semiconductor wafer
JPS52155969A (en) Reduced pressure heat treatment furnace of semiconductor wafers
JPS5513132A (en) Heat treatment of sludge
JPS5789489A (en) Apparatus for decomposition of water
JPS6468921A (en) Heat treatment of semiconductor wafer
JPS553644A (en) Production of semiconductor device
JPS57164524A (en) Vapor reaction for semiconductor wafer
JPS549189A (en) Method of thermochemical producing hydrogen and oxygne from water
JPS53108373A (en) Manufacture for semiconductor device
JPS5722500A (en) Breathing tank for cold tank cooling gas
GB874816A (en) Method and apparatus for making semiconductor units
JPS57124445A (en) Semiconductor substrate
JPS5311106A (en) Structure of blast furnace bottom part
AU8277087A (en) Process and device for the cooling of and the removal of dust from high temperature coke
JPS5665686A (en) Aeration method of extremely deep layer and apparatus using the same
JPS5287371A (en) Production of semiconductor device