JPS5384468A - Electrode formation method by recoil injection - Google Patents
Electrode formation method by recoil injectionInfo
- Publication number
- JPS5384468A JPS5384468A JP16026476A JP16026476A JPS5384468A JP S5384468 A JPS5384468 A JP S5384468A JP 16026476 A JP16026476 A JP 16026476A JP 16026476 A JP16026476 A JP 16026476A JP S5384468 A JPS5384468 A JP S5384468A
- Authority
- JP
- Japan
- Prior art keywords
- formation method
- electrode formation
- recoil
- injection
- recoil injection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To reduce the lateral reaction of the electrode metal by utilizing the ion injection technique.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16026476A JPS5942972B2 (en) | 1976-12-29 | 1976-12-29 | Electrode formation method using recoil injection |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16026476A JPS5942972B2 (en) | 1976-12-29 | 1976-12-29 | Electrode formation method using recoil injection |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5384468A true JPS5384468A (en) | 1978-07-25 |
JPS5942972B2 JPS5942972B2 (en) | 1984-10-18 |
Family
ID=15711234
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16026476A Expired JPS5942972B2 (en) | 1976-12-29 | 1976-12-29 | Electrode formation method using recoil injection |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5942972B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5801086A (en) * | 1994-10-24 | 1998-09-01 | Lg Semicon Co., Ltd. | Process for formation of contact conductive layer in a semiconductor device |
-
1976
- 1976-12-29 JP JP16026476A patent/JPS5942972B2/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5801086A (en) * | 1994-10-24 | 1998-09-01 | Lg Semicon Co., Ltd. | Process for formation of contact conductive layer in a semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS5942972B2 (en) | 1984-10-18 |
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