JPS5376139A - Silicon etch component - Google Patents
Silicon etch componentInfo
- Publication number
- JPS5376139A JPS5376139A JP13483877A JP13483877A JPS5376139A JP S5376139 A JPS5376139 A JP S5376139A JP 13483877 A JP13483877 A JP 13483877A JP 13483877 A JP13483877 A JP 13483877A JP S5376139 A JPS5376139 A JP S5376139A
- Authority
- JP
- Japan
- Prior art keywords
- silicon etch
- etch component
- component
- silicon
- etch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
- Weting (AREA)
- Surface Treatment Of Glass (AREA)
- Detergent Compositions (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US75161976A | 1976-12-17 | 1976-12-17 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5376139A true JPS5376139A (en) | 1978-07-06 |
JPS5550112B2 JPS5550112B2 (en) | 1980-12-16 |
Family
ID=25022795
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13483877A Granted JPS5376139A (en) | 1976-12-17 | 1977-11-11 | Silicon etch component |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS5376139A (en) |
DE (1) | DE2752482A1 (en) |
FR (1) | FR2374396A1 (en) |
GB (1) | GB1588843A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6171512B1 (en) | 1991-02-15 | 2001-01-09 | Canon Kabushiki Kaisha | Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution |
KR20180111673A (en) | 2017-03-31 | 2018-10-11 | 간또 가가꾸 가부시끼가이샤 | Etching liquid composition and etching method |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55153338A (en) * | 1979-05-18 | 1980-11-29 | Fujitsu Ltd | Surface treatment of semiconductor substrate |
DE2951292A1 (en) * | 1979-12-20 | 1981-07-02 | Ibm Deutschland Gmbh, 7000 Stuttgart | METHOD FOR DOPING SILICON BODIES BY DIFFUSING BOR |
JPS6022521U (en) * | 1983-07-19 | 1985-02-16 | 横浜ゴム株式会社 | fender |
US4536322A (en) * | 1983-10-28 | 1985-08-20 | Union Carbide Corporation | Fluorescent corrosive fluoride solution |
CA1313612C (en) * | 1987-01-27 | 1993-02-16 | Michael Scardera | Etching solutions containing ammonium fluoride |
SG47089A1 (en) * | 1991-02-15 | 1998-03-20 | Canon Kk | Etching solution for etching porous silicon etching method using the etching solution and method of preparing semiconductor member using the etching solution |
EP0534474B1 (en) * | 1991-09-27 | 2002-01-16 | Canon Kabushiki Kaisha | Method of processing a silicon substrate |
JP2008521246A (en) * | 2004-11-19 | 2008-06-19 | ハネウエル・インターナシヨナル・インコーポレーテツド | Selective removal chemicals for semiconductor applications, methods for their production and their use |
JP5017709B2 (en) * | 2006-09-07 | 2012-09-05 | ジルトロニック アクチエンゲゼルシャフト | Silicon wafer etching method and semiconductor silicon wafer manufacturing method |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50341A (en) * | 1973-05-07 | 1975-01-06 | ||
JPS509268A (en) * | 1973-05-30 | 1975-01-30 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2847287A (en) * | 1956-07-20 | 1958-08-12 | Bell Telephone Labor Inc | Etching processes and solutions |
BE531769A (en) * | 1957-08-07 | 1900-01-01 | ||
NL257610A (en) * | 1959-11-05 | |||
FR1266612A (en) * | 1960-06-02 | 1961-07-17 | Etching solutions for the surface treatment of semiconductor materials | |
US3773578A (en) * | 1970-12-01 | 1973-11-20 | Us Army | Method of continuously etching a silicon substrate |
-
1977
- 1977-10-24 FR FR7733078A patent/FR2374396A1/en active Granted
- 1977-10-26 GB GB44639/77A patent/GB1588843A/en not_active Expired
- 1977-11-11 JP JP13483877A patent/JPS5376139A/en active Granted
- 1977-11-24 DE DE19772752482 patent/DE2752482A1/en not_active Ceased
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50341A (en) * | 1973-05-07 | 1975-01-06 | ||
JPS509268A (en) * | 1973-05-30 | 1975-01-30 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6171512B1 (en) | 1991-02-15 | 2001-01-09 | Canon Kabushiki Kaisha | Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution |
US6238586B1 (en) | 1991-02-15 | 2001-05-29 | Canon Kabushiki Kaisha | Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution |
US6254794B1 (en) | 1991-02-15 | 2001-07-03 | Canon Kabushiki Kaisha | Etching solution for etching porous silicon, etching method using the etching solution and method of preparing semiconductor member using the etching solution |
KR20180111673A (en) | 2017-03-31 | 2018-10-11 | 간또 가가꾸 가부시끼가이샤 | Etching liquid composition and etching method |
Also Published As
Publication number | Publication date |
---|---|
DE2752482A1 (en) | 1978-06-22 |
FR2374396A1 (en) | 1978-07-13 |
JPS5550112B2 (en) | 1980-12-16 |
FR2374396B1 (en) | 1980-08-08 |
GB1588843A (en) | 1981-04-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5364637A (en) | Polycrystal silicon etched component | |
AU506552B2 (en) | Semiconductor device | |
JPS52105785A (en) | Multiilayer semiconductor element | |
ZA771835B (en) | Semiconductor devices | |
JPS5391685A (en) | Semiconductor | |
JPS5378187A (en) | Semiconductor | |
JPS5331980A (en) | Semiconductor element | |
JPS52110575A (en) | Threeeterminal semiconductor device | |
JPS5376139A (en) | Silicon etch component | |
GB1556559A (en) | Semiconductor stores | |
JPS5370684A (en) | Semiconductor | |
GB1538650A (en) | Semiconductor device | |
GB1552268A (en) | Semiconductor etching | |
JPS5384462A (en) | Silicon on sapphire structure | |
JPS52122236A (en) | Etching device | |
GB1522059A (en) | Plasma etching | |
JPS5334760A (en) | Polyethylenic silicon compounds | |
JPS5385183A (en) | Semiconductor | |
JPS5383580A (en) | Semiconductor | |
JPS5313878A (en) | Semiconductor element | |
JPS532361A (en) | Etching method | |
JPS5323274A (en) | Semiconductor | |
JPS52109532A (en) | Etching primer | |
JPS5332368A (en) | Semiconductor device case | |
JPS52142637A (en) | Plasma etching device |