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JPS53144297A - Display device - Google Patents

Display device

Info

Publication number
JPS53144297A
JPS53144297A JP5925677A JP5925677A JPS53144297A JP S53144297 A JPS53144297 A JP S53144297A JP 5925677 A JP5925677 A JP 5925677A JP 5925677 A JP5925677 A JP 5925677A JP S53144297 A JPS53144297 A JP S53144297A
Authority
JP
Japan
Prior art keywords
display device
matrix
electric field
features
driving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5925677A
Other languages
Japanese (ja)
Inventor
Koshiro Mori
Shoichi Fukai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP5925677A priority Critical patent/JPS53144297A/en
Publication of JPS53144297A publication Critical patent/JPS53144297A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body

Landscapes

  • Liquid Crystal (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
  • Liquid Crystal Display Device Control (AREA)

Abstract

PURPOSE:To obtain a matrix-type display device which features a long active life as well as the high reliability, by driving the display medium distributed corresponding to each of the picture element electrodes disposed in a matrix formation with the AC electric field featuring the perfectly symmetrical waveforms.
JP5925677A 1977-05-20 1977-05-20 Display device Pending JPS53144297A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5925677A JPS53144297A (en) 1977-05-20 1977-05-20 Display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5925677A JPS53144297A (en) 1977-05-20 1977-05-20 Display device

Publications (1)

Publication Number Publication Date
JPS53144297A true JPS53144297A (en) 1978-12-15

Family

ID=13108107

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5925677A Pending JPS53144297A (en) 1977-05-20 1977-05-20 Display device

Country Status (1)

Country Link
JP (1) JPS53144297A (en)

Cited By (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55129394A (en) * 1979-03-29 1980-10-07 Sony Corp Xy matrix display unit
JPS5986084A (en) * 1982-11-10 1984-05-18 スタンレー電気株式会社 Liquid crystal display
JPS61212883A (en) * 1985-03-18 1986-09-20 株式会社日立製作所 Active matrix type liquid crystal display unit
JPH02244029A (en) * 1989-03-16 1990-09-28 Sharp Corp Liquid crystal display device
JPH04177326A (en) * 1990-11-13 1992-06-24 Semiconductor Energy Lab Co Ltd Liquid crystal display device and driving method thereof
JPH04177325A (en) * 1990-11-13 1992-06-24 Semiconductor Energy Lab Co Ltd Liquid crystal display device
US5165075A (en) * 1990-12-10 1992-11-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optic device having pairs of complementary transistors
JPH0534716A (en) * 1991-02-06 1993-02-12 Semiconductor Energy Lab Co Ltd Liquid crystal electrooptical device
US5193018A (en) * 1991-10-28 1993-03-09 Industrial Technology Research Institute Active matrix liquid crystal display system using complementary thin film transistors
US5200846A (en) * 1991-02-16 1993-04-06 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device having a ratio controlling means for providing gradated display levels
JPH05107561A (en) * 1991-10-16 1993-04-30 Semiconductor Energy Lab Co Ltd Electrooptic display device and its manufacturing method and driving method
US5218464A (en) * 1991-02-16 1993-06-08 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
JPH0659276A (en) * 1991-03-27 1994-03-04 Semiconductor Energy Lab Co Ltd Electro-optical device
US5351145A (en) * 1991-01-14 1994-09-27 Matsushita Electric Industrial Co., Ltd. Active matrix substrate device and related method
US5383041A (en) * 1990-12-20 1995-01-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US5408252A (en) * 1991-10-05 1995-04-18 Fujitsu Limited Active matrix-type display device having a reduced number of data bus lines and generating no shift voltage
US5432527A (en) * 1990-05-07 1995-07-11 Fujitsu Limited High quality active matrix-type display device
US5453858A (en) * 1990-12-25 1995-09-26 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device constructed with thin film transistors
US5495353A (en) * 1990-11-26 1996-02-27 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving having an improved electrode and driving arrangement
US5514879A (en) * 1990-11-20 1996-05-07 Semiconductor Energy Laboratory Co., Ltd. Gate insulated field effect transistors and method of manufacturing the same
US5534884A (en) * 1990-12-27 1996-07-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device system and method of driving an electro-optical device
US5543947A (en) * 1991-05-21 1996-08-06 Semiconductor Energy Laboratory Co., Ltd. Method of driving an LCD employing an active matrix with short pulses for gray scale
US5585949A (en) * 1991-03-25 1996-12-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US5614732A (en) * 1990-11-20 1997-03-25 Semiconductor Energy Laboratory Co., Ltd. Gate insulated field effect transistors and method of manufacturing the same
US5642213A (en) * 1991-03-15 1997-06-24 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US5680147A (en) * 1991-05-20 1997-10-21 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US5821559A (en) * 1991-02-16 1998-10-13 Semiconductor Energy Laboratory Co., Ltd. Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors
US5889291A (en) * 1994-04-22 1999-03-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit
US5933205A (en) * 1991-03-26 1999-08-03 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for driving the same
US5956105A (en) * 1991-06-14 1999-09-21 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US6013928A (en) * 1991-08-23 2000-01-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having interlayer insulating film and method for forming the same
US6028333A (en) * 1991-02-16 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors
US6195139B1 (en) 1992-03-04 2001-02-27 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US6242758B1 (en) 1994-12-27 2001-06-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device employing resinous material, method of fabricating the same and electrooptical device
US6326642B1 (en) 1992-05-29 2001-12-04 Semiconductor Energy Laboratory Co., Ltd. Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors
US6331723B1 (en) 1991-08-26 2001-12-18 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device having at least two transistors having LDD region in one pixel
US6337731B1 (en) 1992-04-28 2002-01-08 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US6693301B2 (en) 1991-10-16 2004-02-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving and manufacturing the same
US6693681B1 (en) 1992-04-28 2004-02-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US6713783B1 (en) 1991-03-15 2004-03-30 Semiconductor Energy Laboratory Co., Ltd. Compensating electro-optical device including thin film transistors
US6717630B1 (en) 1998-09-25 2004-04-06 Nec Lcd Technologies, Ltd. Liquid crystal display device and method of fabricating the same
US6778231B1 (en) 1991-06-14 2004-08-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical display device
US6893906B2 (en) 1990-11-26 2005-05-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
US6975296B1 (en) 1991-06-14 2005-12-13 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US7071910B1 (en) 1991-10-16 2006-07-04 Semiconductor Energy Laboratory Co., Ltd. Electrooptical device and method of driving and manufacturing the same
US7154147B1 (en) 1990-11-26 2006-12-26 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
US7253440B1 (en) 1991-10-16 2007-08-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having at least first and second thin film transistors
US7375712B2 (en) 2002-02-05 2008-05-20 Sharp Kabushiki Kaisha Liquid crystal display with separate positive and negative driving circuits
US8012782B2 (en) 1995-03-18 2011-09-06 Semiconductor Energy Laboratory Co., Ltd. Method for producing display device
US8106867B2 (en) 1990-11-26 2012-01-31 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same

Cited By (80)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55129394A (en) * 1979-03-29 1980-10-07 Sony Corp Xy matrix display unit
JPS5986084A (en) * 1982-11-10 1984-05-18 スタンレー電気株式会社 Liquid crystal display
JPS61212883A (en) * 1985-03-18 1986-09-20 株式会社日立製作所 Active matrix type liquid crystal display unit
JPH02244029A (en) * 1989-03-16 1990-09-28 Sharp Corp Liquid crystal display device
US5432527A (en) * 1990-05-07 1995-07-11 Fujitsu Limited High quality active matrix-type display device
US6011532A (en) * 1990-05-07 2000-01-04 Fujitsu Limited High quality active matrix-type display device
US5515072A (en) * 1990-05-07 1996-05-07 Fujitsu Limited High quality active matrix-type display device
JPH04177326A (en) * 1990-11-13 1992-06-24 Semiconductor Energy Lab Co Ltd Liquid crystal display device and driving method thereof
JPH04177325A (en) * 1990-11-13 1992-06-24 Semiconductor Energy Lab Co Ltd Liquid crystal display device
US7462515B2 (en) 1990-11-13 2008-12-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
US6011277A (en) * 1990-11-20 2000-01-04 Semiconductor Energy Laboratory Co., Ltd. Gate insulated field effect transistors and method of manufacturing the same
US5859445A (en) * 1990-11-20 1999-01-12 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device including thin film transistors having spoiling impurities added thereto
US5614732A (en) * 1990-11-20 1997-03-25 Semiconductor Energy Laboratory Co., Ltd. Gate insulated field effect transistors and method of manufacturing the same
US5514879A (en) * 1990-11-20 1996-05-07 Semiconductor Energy Laboratory Co., Ltd. Gate insulated field effect transistors and method of manufacturing the same
US7423290B2 (en) 1990-11-26 2008-09-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
US8106867B2 (en) 1990-11-26 2012-01-31 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
US5946059A (en) * 1990-11-26 1999-08-31 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
US5905555A (en) * 1990-11-26 1999-05-18 Semiconductor Energy Laboratory Co., Ltd. Active matrix type electro-optical device having leveling film
US8026886B2 (en) 1990-11-26 2011-09-27 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
US6893906B2 (en) 1990-11-26 2005-05-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
US5495353A (en) * 1990-11-26 1996-02-27 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving having an improved electrode and driving arrangement
US7154147B1 (en) 1990-11-26 2006-12-26 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
US5612799A (en) * 1990-11-26 1997-03-18 Semiconductor Energy Laboratory Co., Inc. Active matrix type electro-optical device
US5165075A (en) * 1990-12-10 1992-11-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optic device having pairs of complementary transistors
US5572047A (en) * 1990-12-10 1996-11-05 Semiconductor Energy Laboratory Co., Ltd. Electro-Optic device having pairs of complementary transistors
US5383041A (en) * 1990-12-20 1995-01-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US5500538A (en) * 1990-12-20 1996-03-19 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US5701167A (en) * 1990-12-25 1997-12-23 Semiconductor Energy Laboratory Co., Ltd. LCD having a peripheral circuit with TFTs having the same structure as TFTs in the display region
US6023075A (en) * 1990-12-25 2000-02-08 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US5453858A (en) * 1990-12-25 1995-09-26 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device constructed with thin film transistors
US5534884A (en) * 1990-12-27 1996-07-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device system and method of driving an electro-optical device
US5351145A (en) * 1991-01-14 1994-09-27 Matsushita Electric Industrial Co., Ltd. Active matrix substrate device and related method
JPH0534716A (en) * 1991-02-06 1993-02-12 Semiconductor Energy Lab Co Ltd Liquid crystal electrooptical device
US5200846A (en) * 1991-02-16 1993-04-06 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device having a ratio controlling means for providing gradated display levels
US6028333A (en) * 1991-02-16 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors
US7479939B1 (en) 1991-02-16 2009-01-20 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US5821559A (en) * 1991-02-16 1998-10-13 Semiconductor Energy Laboratory Co., Ltd. Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors
US5218464A (en) * 1991-02-16 1993-06-08 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US5642213A (en) * 1991-03-15 1997-06-24 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US6236064B1 (en) 1991-03-15 2001-05-22 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US6713783B1 (en) 1991-03-15 2004-03-30 Semiconductor Energy Laboratory Co., Ltd. Compensating electro-optical device including thin film transistors
US5585949A (en) * 1991-03-25 1996-12-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US5933205A (en) * 1991-03-26 1999-08-03 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for driving the same
US5963278A (en) * 1991-03-26 1999-10-05 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for driving the same
JPH0659276A (en) * 1991-03-27 1994-03-04 Semiconductor Energy Lab Co Ltd Electro-optical device
US5680147A (en) * 1991-05-20 1997-10-21 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US5543947A (en) * 1991-05-21 1996-08-06 Semiconductor Energy Laboratory Co., Ltd. Method of driving an LCD employing an active matrix with short pulses for gray scale
US6778231B1 (en) 1991-06-14 2004-08-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical display device
US7928946B2 (en) 1991-06-14 2011-04-19 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US5956105A (en) * 1991-06-14 1999-09-21 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US6975296B1 (en) 1991-06-14 2005-12-13 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US6013928A (en) * 1991-08-23 2000-01-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having interlayer insulating film and method for forming the same
US6803600B2 (en) 1991-08-26 2004-10-12 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect semiconductor devices and method of manufacturing the same
US6331723B1 (en) 1991-08-26 2001-12-18 Semiconductor Energy Laboratory Co., Ltd. Active matrix display device having at least two transistors having LDD region in one pixel
US7821011B2 (en) 1991-08-26 2010-10-26 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect semiconductor devices and method of manufacturing the same
US7456427B2 (en) 1991-08-26 2008-11-25 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect semiconductor devices and method of manufacturing the same
US5408252A (en) * 1991-10-05 1995-04-18 Fujitsu Limited Active matrix-type display device having a reduced number of data bus lines and generating no shift voltage
JPH05107561A (en) * 1991-10-16 1993-04-30 Semiconductor Energy Lab Co Ltd Electrooptic display device and its manufacturing method and driving method
US6693301B2 (en) 1991-10-16 2004-02-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving and manufacturing the same
US5828429A (en) * 1991-10-16 1998-10-27 Semiconductor Energy Laboratory Co., Lt.D Electro-optical device and method of driving with voltage supply lines parallel to gate lines and two transistors per pixel
US7071910B1 (en) 1991-10-16 2006-07-04 Semiconductor Energy Laboratory Co., Ltd. Electrooptical device and method of driving and manufacturing the same
US7116302B2 (en) 1991-10-16 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Process of operating active matrix display device having thin film transistors
US6023308A (en) * 1991-10-16 2000-02-08 Semiconductor Energy Laboratory Co., Ltd. Active matrix device with two TFT's per pixel driven by a third TFT with a crystalline silicon channel
US7253440B1 (en) 1991-10-16 2007-08-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having at least first and second thin film transistors
US6759680B1 (en) 1991-10-16 2004-07-06 Semiconductor Energy Laboratory Co., Ltd. Display device having thin film transistors
US5193018A (en) * 1991-10-28 1993-03-09 Industrial Technology Research Institute Active matrix liquid crystal display system using complementary thin film transistors
US8035773B2 (en) 1992-03-04 2011-10-11 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US6195139B1 (en) 1992-03-04 2001-02-27 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US7123320B2 (en) 1992-03-04 2006-10-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US6618105B2 (en) 1992-03-04 2003-09-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US7554616B1 (en) 1992-04-28 2009-06-30 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US6693681B1 (en) 1992-04-28 2004-02-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US6337731B1 (en) 1992-04-28 2002-01-08 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US6326642B1 (en) 1992-05-29 2001-12-04 Semiconductor Energy Laboratory Co., Ltd. Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors
US5889291A (en) * 1994-04-22 1999-03-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit
US6242758B1 (en) 1994-12-27 2001-06-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device employing resinous material, method of fabricating the same and electrooptical device
US6429053B1 (en) 1994-12-27 2002-08-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device method of fabricating same, and, electrooptical device
US8012782B2 (en) 1995-03-18 2011-09-06 Semiconductor Energy Laboratory Co., Ltd. Method for producing display device
US6717630B1 (en) 1998-09-25 2004-04-06 Nec Lcd Technologies, Ltd. Liquid crystal display device and method of fabricating the same
US7375712B2 (en) 2002-02-05 2008-05-20 Sharp Kabushiki Kaisha Liquid crystal display with separate positive and negative driving circuits

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