JPS5311576A - Method of forming thin film by vapourrgrowth - Google Patents
Method of forming thin film by vapourrgrowthInfo
- Publication number
- JPS5311576A JPS5311576A JP8584676A JP8584676A JPS5311576A JP S5311576 A JPS5311576 A JP S5311576A JP 8584676 A JP8584676 A JP 8584676A JP 8584676 A JP8584676 A JP 8584676A JP S5311576 A JPS5311576 A JP S5311576A
- Authority
- JP
- Japan
- Prior art keywords
- vapourrgrowth
- thin film
- forming thin
- forming
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8584676A JPS5311576A (en) | 1976-07-19 | 1976-07-19 | Method of forming thin film by vapourrgrowth |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8584676A JPS5311576A (en) | 1976-07-19 | 1976-07-19 | Method of forming thin film by vapourrgrowth |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5311576A true JPS5311576A (en) | 1978-02-02 |
JPS5636564B2 JPS5636564B2 (en) | 1981-08-25 |
Family
ID=13870224
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8584676A Granted JPS5311576A (en) | 1976-07-19 | 1976-07-19 | Method of forming thin film by vapourrgrowth |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5311576A (en) |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59190296A (en) * | 1983-04-12 | 1984-10-29 | Agency Of Ind Science & Technol | Growth of crystal in vapor of organometallic compound |
JPS59190297A (en) * | 1983-04-12 | 1984-10-29 | Agency Of Ind Science & Technol | Crystal growth in vapor of organometallic compound |
US4649859A (en) * | 1985-02-19 | 1987-03-17 | The United States Of America As Represented By The United States Department Of Energy | Reactor design for uniform chemical vapor deposition-grown films without substrate rotation |
US4748135A (en) * | 1986-05-27 | 1988-05-31 | U.S. Philips Corp. | Method of manufacturing a semiconductor device by vapor phase deposition using multiple inlet flow control |
US4945856A (en) * | 1988-06-23 | 1990-08-07 | Jeffrey Stewart | Parylene deposition chamber |
US5078091A (en) * | 1988-06-23 | 1992-01-07 | Jeffrey Stewart | Parylene deposition chamber and method of use |
US5167718A (en) * | 1988-06-23 | 1992-12-01 | Jeffrey Stewart | Parylene deposition chamber and method of use |
JPH04131656U (en) * | 1991-05-15 | 1992-12-03 | 日本酸素株式会社 | Thin film manufacturing equipment |
US5275686A (en) * | 1991-09-25 | 1994-01-04 | University Of New Mexico | Radial epitaxial reactor for multiple wafer growth |
US5488833A (en) * | 1994-09-26 | 1996-02-06 | Stewart; Jeffrey | Tangential flow cold trap |
US5882725A (en) * | 1997-07-01 | 1999-03-16 | Para Tech Coating, Inc. | Parylene deposition chamber including eccentric part tumbler |
US6406544B1 (en) | 1988-06-23 | 2002-06-18 | Jeffrey Stewart | Parylene deposition chamber and method of use |
US6737224B2 (en) | 2001-04-17 | 2004-05-18 | Jeffrey Stewart | Method of preparing thin supported films by vacuum deposition |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4325497Y1 (en) * | 1966-03-02 | 1968-10-25 | ||
JPS49110562U (en) * | 1973-01-19 | 1974-09-20 |
-
1976
- 1976-07-19 JP JP8584676A patent/JPS5311576A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4325497Y1 (en) * | 1966-03-02 | 1968-10-25 | ||
JPS49110562U (en) * | 1973-01-19 | 1974-09-20 |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59190296A (en) * | 1983-04-12 | 1984-10-29 | Agency Of Ind Science & Technol | Growth of crystal in vapor of organometallic compound |
JPS59190297A (en) * | 1983-04-12 | 1984-10-29 | Agency Of Ind Science & Technol | Crystal growth in vapor of organometallic compound |
US4649859A (en) * | 1985-02-19 | 1987-03-17 | The United States Of America As Represented By The United States Department Of Energy | Reactor design for uniform chemical vapor deposition-grown films without substrate rotation |
US4748135A (en) * | 1986-05-27 | 1988-05-31 | U.S. Philips Corp. | Method of manufacturing a semiconductor device by vapor phase deposition using multiple inlet flow control |
US5167718A (en) * | 1988-06-23 | 1992-12-01 | Jeffrey Stewart | Parylene deposition chamber and method of use |
US5078091A (en) * | 1988-06-23 | 1992-01-07 | Jeffrey Stewart | Parylene deposition chamber and method of use |
US4945856A (en) * | 1988-06-23 | 1990-08-07 | Jeffrey Stewart | Parylene deposition chamber |
US6406544B1 (en) | 1988-06-23 | 2002-06-18 | Jeffrey Stewart | Parylene deposition chamber and method of use |
JPH04131656U (en) * | 1991-05-15 | 1992-12-03 | 日本酸素株式会社 | Thin film manufacturing equipment |
US5275686A (en) * | 1991-09-25 | 1994-01-04 | University Of New Mexico | Radial epitaxial reactor for multiple wafer growth |
US5488833A (en) * | 1994-09-26 | 1996-02-06 | Stewart; Jeffrey | Tangential flow cold trap |
US5882725A (en) * | 1997-07-01 | 1999-03-16 | Para Tech Coating, Inc. | Parylene deposition chamber including eccentric part tumbler |
US6737224B2 (en) | 2001-04-17 | 2004-05-18 | Jeffrey Stewart | Method of preparing thin supported films by vacuum deposition |
Also Published As
Publication number | Publication date |
---|---|
JPS5636564B2 (en) | 1981-08-25 |
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