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JPS5216182A - Junction type field effect transistor - Google Patents

Junction type field effect transistor

Info

Publication number
JPS5216182A
JPS5216182A JP9188575A JP9188575A JPS5216182A JP S5216182 A JPS5216182 A JP S5216182A JP 9188575 A JP9188575 A JP 9188575A JP 9188575 A JP9188575 A JP 9188575A JP S5216182 A JPS5216182 A JP S5216182A
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
type field
junction type
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9188575A
Other languages
Japanese (ja)
Inventor
Kazuo Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP9188575A priority Critical patent/JPS5216182A/en
Publication of JPS5216182A publication Critical patent/JPS5216182A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: In JFET, to obtain both a high voltage withstand and a high forward direction conductance.
COPYRIGHT: (C)1977,JPO&Japio
JP9188575A 1975-07-30 1975-07-30 Junction type field effect transistor Pending JPS5216182A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9188575A JPS5216182A (en) 1975-07-30 1975-07-30 Junction type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9188575A JPS5216182A (en) 1975-07-30 1975-07-30 Junction type field effect transistor

Publications (1)

Publication Number Publication Date
JPS5216182A true JPS5216182A (en) 1977-02-07

Family

ID=14039005

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9188575A Pending JPS5216182A (en) 1975-07-30 1975-07-30 Junction type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5216182A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5610972A (en) * 1979-06-29 1981-02-03 Philips Nv Junction type field effect transistor and method of manufacturing same
JPS57104266A (en) * 1980-12-19 1982-06-29 Matsushita Electric Ind Co Ltd Manufacture of junction type field effect transistor
US4912053A (en) * 1988-02-01 1990-03-27 Harris Corporation Ion implanted JFET with self-aligned source and drain
JPH05175238A (en) * 1991-12-20 1993-07-13 Nec Yamagata Ltd Junction type field-effect transistor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5610972A (en) * 1979-06-29 1981-02-03 Philips Nv Junction type field effect transistor and method of manufacturing same
JPS6352785B2 (en) * 1979-06-29 1988-10-20 Fuiritsupusu Furuuiranpenfuaburiken Nv
JPS57104266A (en) * 1980-12-19 1982-06-29 Matsushita Electric Ind Co Ltd Manufacture of junction type field effect transistor
US4912053A (en) * 1988-02-01 1990-03-27 Harris Corporation Ion implanted JFET with self-aligned source and drain
JPH05175238A (en) * 1991-12-20 1993-07-13 Nec Yamagata Ltd Junction type field-effect transistor

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