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JPS52147074A - Ion implantation apparatus - Google Patents

Ion implantation apparatus

Info

Publication number
JPS52147074A
JPS52147074A JP6361676A JP6361676A JPS52147074A JP S52147074 A JPS52147074 A JP S52147074A JP 6361676 A JP6361676 A JP 6361676A JP 6361676 A JP6361676 A JP 6361676A JP S52147074 A JPS52147074 A JP S52147074A
Authority
JP
Japan
Prior art keywords
ion implantation
implantation apparatus
ion
divergence
reduce
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6361676A
Other languages
Japanese (ja)
Other versions
JPS5856955B2 (en
Inventor
Katsumi Tokikuchi
Kuniyuki Sakumichi
Hideki Koike
Ichiro Shikamata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6361676A priority Critical patent/JPS5856955B2/en
Publication of JPS52147074A publication Critical patent/JPS52147074A/en
Publication of JPS5856955B2 publication Critical patent/JPS5856955B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Welding Or Cutting Using Electron Beams (AREA)
  • Electron Beam Exposure (AREA)

Abstract

PURPOSE: To reduce the divergence of ion beam fluxes at the time of positive charge ion implantation of large current and perform ion implantation of less loss in current quantity by newly adding a negative ion source.
COPYRIGHT: (C)1977,JPO&Japio
JP6361676A 1976-06-02 1976-06-02 Ion implantation device Expired JPS5856955B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6361676A JPS5856955B2 (en) 1976-06-02 1976-06-02 Ion implantation device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6361676A JPS5856955B2 (en) 1976-06-02 1976-06-02 Ion implantation device

Publications (2)

Publication Number Publication Date
JPS52147074A true JPS52147074A (en) 1977-12-07
JPS5856955B2 JPS5856955B2 (en) 1983-12-17

Family

ID=13234412

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6361676A Expired JPS5856955B2 (en) 1976-06-02 1976-06-02 Ion implantation device

Country Status (1)

Country Link
JP (1) JPS5856955B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5515206A (en) * 1978-07-19 1980-02-02 Toshiba Corp Electronic beam exposure apparatus
JPS5515205A (en) * 1978-07-19 1980-02-02 Toshiba Corp Electronic beam exposure apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5515206A (en) * 1978-07-19 1980-02-02 Toshiba Corp Electronic beam exposure apparatus
JPS5515205A (en) * 1978-07-19 1980-02-02 Toshiba Corp Electronic beam exposure apparatus
JPS633452B2 (en) * 1978-07-19 1988-01-23 Tokyo Shibaura Electric Co

Also Published As

Publication number Publication date
JPS5856955B2 (en) 1983-12-17

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