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JPS52139365A - Measuring method for film thickness of vapor grown films in semiconductor wafers - Google Patents

Measuring method for film thickness of vapor grown films in semiconductor wafers

Info

Publication number
JPS52139365A
JPS52139365A JP5537876A JP5537876A JPS52139365A JP S52139365 A JPS52139365 A JP S52139365A JP 5537876 A JP5537876 A JP 5537876A JP 5537876 A JP5537876 A JP 5537876A JP S52139365 A JPS52139365 A JP S52139365A
Authority
JP
Japan
Prior art keywords
film thickness
measuring method
semiconductor wafers
vapor grown
grown films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5537876A
Other languages
Japanese (ja)
Inventor
Yukio Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5537876A priority Critical patent/JPS52139365A/en
Publication of JPS52139365A publication Critical patent/JPS52139365A/en
Pending legal-status Critical Current

Links

Landscapes

  • Length Measuring Devices By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE: To measure the thickness of the grown film from the interference waveforms of the infrared rays from a specific wafer, by making one of the spacers of the wafers arrayed on a concentric circle extremely large, projecting light at one point on the concentric circle and checking the position from the light reflected therefrom.
COPYRIGHT: (C)1977,JPO&Japio
JP5537876A 1976-05-17 1976-05-17 Measuring method for film thickness of vapor grown films in semiconductor wafers Pending JPS52139365A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5537876A JPS52139365A (en) 1976-05-17 1976-05-17 Measuring method for film thickness of vapor grown films in semiconductor wafers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5537876A JPS52139365A (en) 1976-05-17 1976-05-17 Measuring method for film thickness of vapor grown films in semiconductor wafers

Publications (1)

Publication Number Publication Date
JPS52139365A true JPS52139365A (en) 1977-11-21

Family

ID=12996810

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5537876A Pending JPS52139365A (en) 1976-05-17 1976-05-17 Measuring method for film thickness of vapor grown films in semiconductor wafers

Country Status (1)

Country Link
JP (1) JPS52139365A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0344842A (en) * 1989-07-12 1991-02-26 Matsushita Electric Ind Co Ltd Manufacture of information carrying disk
US7854397B2 (en) 2005-01-21 2010-12-21 Specialty Minerals (Michigan) Inc. Long throw shotcrete nozzle
JP2011117851A (en) * 2009-12-04 2011-06-16 Sharp Corp Vapor phase growth device and vapor phase growth method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0344842A (en) * 1989-07-12 1991-02-26 Matsushita Electric Ind Co Ltd Manufacture of information carrying disk
US7854397B2 (en) 2005-01-21 2010-12-21 Specialty Minerals (Michigan) Inc. Long throw shotcrete nozzle
JP2011117851A (en) * 2009-12-04 2011-06-16 Sharp Corp Vapor phase growth device and vapor phase growth method

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