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JPS52136568A - Process for forming epitaxial layer of single crystal silicon - Google Patents

Process for forming epitaxial layer of single crystal silicon

Info

Publication number
JPS52136568A
JPS52136568A JP4597777A JP4597777A JPS52136568A JP S52136568 A JPS52136568 A JP S52136568A JP 4597777 A JP4597777 A JP 4597777A JP 4597777 A JP4597777 A JP 4597777A JP S52136568 A JPS52136568 A JP S52136568A
Authority
JP
Japan
Prior art keywords
single crystal
epitaxial layer
crystal silicon
forming epitaxial
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4597777A
Other languages
Japanese (ja)
Inventor
Kan Chiyuu Uei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS52136568A publication Critical patent/JPS52136568A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C30B1/023—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing from solids with amorphous structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP4597777A 1976-05-11 1977-04-22 Process for forming epitaxial layer of single crystal silicon Pending JPS52136568A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US68524876A 1976-05-11 1976-05-11

Publications (1)

Publication Number Publication Date
JPS52136568A true JPS52136568A (en) 1977-11-15

Family

ID=24751374

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4597777A Pending JPS52136568A (en) 1976-05-11 1977-04-22 Process for forming epitaxial layer of single crystal silicon

Country Status (5)

Country Link
JP (1) JPS52136568A (en)
DE (1) DE2711543A1 (en)
FR (1) FR2350877A1 (en)
GB (1) GB1515837A (en)
IT (1) IT1115628B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3126050A1 (en) * 1981-07-02 1983-01-13 Hanno Prof. Dr. 2000 Hamburg Schaumburg Process for preparing monocrystalline or coarsely polycrystalline layers
FR2968316B1 (en) * 2010-12-01 2013-06-28 Commissariat Energie Atomique PROCESS FOR THE PREPARATION OF A CRYSTALLIZED SILICON LAYER WITH BIG GRAINS

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5038838A (en) * 1973-08-02 1975-04-10

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5038838A (en) * 1973-08-02 1975-04-10

Also Published As

Publication number Publication date
DE2711543A1 (en) 1977-11-24
IT1115628B (en) 1986-02-03
FR2350877A1 (en) 1977-12-09
GB1515837A (en) 1978-06-28

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