JPS5964790A - Tin with a low radioactive alpha particle count and its manufacturing method - Google Patents
Tin with a low radioactive alpha particle count and its manufacturing methodInfo
- Publication number
- JPS5964790A JPS5964790A JP17268882A JP17268882A JPS5964790A JP S5964790 A JPS5964790 A JP S5964790A JP 17268882 A JP17268882 A JP 17268882A JP 17268882 A JP17268882 A JP 17268882A JP S5964790 A JPS5964790 A JP S5964790A
- Authority
- JP
- Japan
- Prior art keywords
- tin
- radioactive
- particle count
- alpha particle
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000002285 radioactive effect Effects 0.000 title claims description 22
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 title claims description 16
- 239000002245 particle Substances 0.000 title claims description 12
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- LBDSXVIYZYSRII-IGMARMGPSA-N alpha-particle Chemical compound [4He+2] LBDSXVIYZYSRII-IGMARMGPSA-N 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 101710094396 Hexon protein Proteins 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 description 13
- 239000012776 electronic material Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- FDDDEECHVMSUSB-UHFFFAOYSA-N sulfanilamide Chemical compound NC1=CC=C(S(N)(=O)=O)C=C1 FDDDEECHVMSUSB-UHFFFAOYSA-N 0.000 description 3
- 229940124530 sulfonamide Drugs 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
- LNOPIUAQISRISI-UHFFFAOYSA-N n'-hydroxy-2-propan-2-ylsulfonylethanimidamide Chemical compound CC(C)S(=O)(=O)CC(N)=NO LNOPIUAQISRISI-UHFFFAOYSA-N 0.000 description 2
- 101150064138 MAP1 gene Proteins 0.000 description 1
- 241001655798 Taku Species 0.000 description 1
- 241000270708 Testudinidae Species 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000009958 sewing Methods 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Landscapes
- Electrolytic Production Of Metals (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
本活明は電子材料向けに適した放射性α粒子カウント故
の低い揚およびその製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a low radioactive alpha particle count suitable for electronic materials and a method for producing the same.
近年電子材料1iJJけとして錫の用途が拡大しつつあ
り1例えば、ICは勿論のこと大容縫メモ+7−素子で
ある64KRAM等のメモリーや各1超LSI等の半導
体装置のアセンブリーに際し、装置部材接ハ用のろう材
として特に80%AU−20%Snろりはセラミツクパ
ック−948合用ろう材として用いらtt′1:lnる
。In recent years, the use of tin as an electronic material has been expanding.1 For example, tin is used as a device component when assembling not only ICs but also memories such as 64KRAM, which is a large capacity sewing memo + 7-element, and semiconductor devices such as 1 LSI each. As a brazing material for bonding, in particular, 80% AU-20% Sn is used as a brazing material for Ceramic Pack-948.
しかるに、従来市販されているf−!ilJmあるいは
輸入の錫ンま放射性同位元素、特にU、Thの含有菫が
多く、従ってα粒子のカラン)dが2〜I OCPH/
Cm2と尚(、この影響によって将来の256 KRA
M’PIメガビットRAMの如きより高い1d順性全要
求される超LSI釦用いた場吟、ソフトエラーを惹起す
るiI吐性が十分に予想されるところひある。However, conventionally commercially available f-! ilJm or imported tin has a large amount of violet containing radioactive isotopes, especially U and Th, so the alpha particle d is 2~I OCPH/
Cm2 and Nao (, due to this influence the future 256 KRA
When using a VLSI button such as M'PI megabit RAM, which requires higher 1D orderliness, it is highly likely that II problems that will cause soft errors will occur.
本発明者らは以上の点を4尽し、上記のぼ子材斜向けに
適した錫の放射性特性について情死?41ねた結果、製
品としての錫の放射性同位元素の含有酸は30ppb未
満で、かつ放射性α粒子カウント故は0.2 CPH/
cm”以下であることが必要であることを見出し、かか
る放射性物性を有する錫の装置青味として、スルファミ
ン酸を1解散とするN、1方法を通用することにより解
決し、本発明を完成゛するにいたった。すなわち、不発
明の要旨とするところtま。The inventors of the present invention have made all the above points, and have investigated the radioactive properties of tin suitable for the above-mentioned boko material. As a result of 41 studies, the acid content of radioactive isotopes in tin as a product was less than 30 ppb, and the radioactive alpha particle count was 0.2 CPH/
cm'' or less, and solved the problem by applying the N,1 method in which sulfamic acid is dissolved in 1 to create a blue tint in a tin device having such radioactive properties, and completed the present invention. In other words, the gist of non-invention.
ill 99.95@遺優以上の品fIlを有し、放
射性同位元素の含有量が30ppb氷満で、かつ放射性
α粒子のカウント叙が0.2CPIi乙−以上であるこ
と全0畝とする放射性α粒子カウント数の低り錫。ill 99.95@It has a quality of 99.95 @ or better, the content of radioactive isotopes is 30 ppb, and the count of radioactive α particles is 0.2 CPIi or more. Low alpha particle count tin.
+21 99.95遁を優以上の品位を有する扇tアノ
ートトシ、at組成は8n : 30〜130 ’t/
13.スルフ゛rミン戚30〜20011/ノで亀解剪
許はカソードX流:d+f : 0.5〜2.0 Am
p/den’ 、aailt:15〜50°Cで畦躊x
iテ°〉ことと特はとする放イす性α粒子カウント数の
低い禍の製造方法、にある。+21 99.95 A fan with a quality of superior or better, AT composition is 8n: 30-130't/
13. In the sulfamine family 30-20011/no, the tortoise shearing is cathode X flow: d+f: 0.5-2.0 Am
p/den', aailt: Furrow x at 15-50°C
The special feature lies in the method of producing a nuisance with a low count of emissive α particles.
不発明で寛j弄浴として使l目されるスルファミン+d
は+11販晶のものでも故封性同泣元素金はとんど百”
まないのでそのfま圧用がllJ相で1品位99.95
電jt係以上の錫r゛rノードとじ、「1j販のスル7
アミンーt−区屏を反とし゛CC金倉1己巣注のもとで
、すなわち、γノード:品位99.954tチ以上のS
nV&IM成 : 8n 30〜1B0f/e#ス
ルフアミン岐30〜20Of−/にJ
覗屏条件:サソード電流aK O,5〜2.0 Amp
/dm”で′tIi解梢製することにより、アノード
中忙官有されてbる放射性同位元素が梢製除去されて、
放射性α粒子カウント数の低いカソードが1瞭られる。Sulfamine + d, which is used as an uninvented and relaxing bath
Even if it is a +11 sales crystal, the late sealing element gold is almost 100.
Therefore, the f pressure is llj phase and 1 grade is 99.95.
Tin r゛r node binding for electrician JT staff and above,
Amin-t-block folding is reversed. Under CC Kanakura 1 self-inspection, that is, γ node: S with quality 99.954t or more
nV & IM configuration: 8n 30~1B0f/e #sulfamine branch 30~20Of-/J Viewing conditions: Sathode current aKO, 5~2.0 Amp
/dm", the radioactive isotopes present in the anode are removed,
One cathode with a low radioactive alpha particle count is clearly visible.
このようにlit解で得られた錫は99.95嵐麓チ以
上の品位を有し、放射性同位元素の含有量は30ppb
未満でかつ放射性α粒子カウント数0.2 CPH7ロ
2以下であり、上ml電子材料向けとして十分適応でき
るものである。The tin obtained by the lit solution has a quality of 99.95 Arashirokuchi or higher, and the content of radioactive isotopes is 30 ppb.
The number of radioactive α particles is less than 0.2 and the CPH7 is less than 2, making it fully applicable to upper ml electronic materials.
本発明による製造方法の1例を図面釦よって説明する。An example of the manufacturing method according to the present invention will be explained using the drawing buttons.
すなわち、電解槽1に品位99.95重量%以上の錫ア
ノード2と不溶解性カソード板3を挿入し、環流ポンプ
4でスルファミン酸aS液7を通して環流させ、直流?
4を啄装置6により通電電解し1.I:記各Mi電子材
料向けに適応した放射性α粒子カウント数の低い錫が得
られる。That is, a tin anode 2 having a grade of 99.95% by weight or more and an insoluble cathode plate 3 are inserted into an electrolytic cell 1, and a sulfamic acid aS solution 7 is refluxed by a reflux pump 4, and a direct current is generated.
4 is energized and electrolyzed by the taku device 6.1. I: Tin with a low radioactive α particle count suitable for each Mi electronic material can be obtained.
本発明は以上のように上記1子材料向けとしての適性を
有する錫およびそのIA遣方法金得供するもので、工業
的1曲1直は1唾h・
次に1本発明を実施例によってさらに具体的に説明する
。As described above, the present invention provides tin that is suitable for use as the above-mentioned single-layer material and a method for using it in IA. I will explain in detail.
実施例
上自己のスルファミン酸浴より?IられたSnカソード
中の放射性同位元素のi)l[及び放射性α粒子カウン
ト戟の測定結果を次表に実施例1〜4として、また比較
のため眞、通常の電解梢製法である畦弗化水X酸より得
られたSnカソード中の数値を比較例1〜4として、そ
れぞれexaに併せ示す。Example than self-sulfamic acid bath? The measurement results of radioactive isotopes in the Sn cathode and radioactive α particle counting are shown in the table below as Examples 1 to 4. The numerical values in the Sn cathode obtained from hydroxide X acid are shown as Comparative Examples 1 to 4, respectively, together with exa.
次表から明らかであるように、本発明方法で得られたー
カソードはアノードに比し放射性同位元素の含有濃度か
大幅九低ドするとともに放射性α粒子カウント数も減少
しており1本発明の効果が顕著であることが確認できた
。As is clear from the following table, the cathode obtained by the method of the present invention has a significantly lower radioisotope concentration and a reduced number of radioactive α particles compared to the anode. was confirmed to be significant.
比rf1例ではアノード九比し、かえってカソードの分
が放射性同位元素の[1及びα粒子カウント数とも上昇
しているが、これは市販の珪弗化水素酸中には放射性同
位元素、特にThの含有量が高いことによるものと考え
られる。In the RF1 example, the anode ratio is 9, and the cathode content increases both the [1 and α particle counts of radioactive isotopes. This is thought to be due to the high content of .
4、 1M11niの1.11中: jJ−:説明Is
+開は木イj :4’J &) l嶋・1’jj 1列
の漠IHシ1ミ妖図をボすつ1、ンIf1.’16し〆
1て、
1 φ・・置市:jIIf 僧
2曹・0錦fノード
3 ・e・・不(#I+’r l生カソード仮4晦@
II 11 J+、”(流ポンプ5・・・・晶又+V4
器
6 ψ・l μ;1 tシIt L+V、 イト1ζ装
置NN7・11スルフrミン醗tK屏液4, 1.11 of 1M11ni: jJ-: Explanation Is
+Opening is a tree j:4'J &) 1 island・1'jj 1 row of IH Shi 1 mi demon map 1, n If 1. '16 and 1, 1 φ...Okiichi: jIIf Monk 2 So.
II 11 J+,” (flow pump 5... Akimata + V4
Container 6 ψ・l μ; 1 t L+V, 1 ζ device NN7・11 sulfuric acid liquid
Claims (1)
元素の言有破がaoppb未満でかつ放射性α粒子のカ
ウント数が0.2 CP H/ cm”以下であること
を特徴とする放射性α粒子カウント数の低い錫。 (2)品位99.95→i最以丘の錫をアノードとし、
液組成は8n : 30〜150 f/4. ス、+1
/7アミ/[[30〜200 Ff/6 テ1141.
)l/#条注はカソード′亀流端11 60、5〜2.
OAmp /dm ” 、液4[:15〜50°Cで
−m金行うことを特徴とする放射性α粒子カウント数の
低い錫の製造方法、[Scope of Claims] (Has a quality of 1199,95i or higher, has a radioactive isotope content of less than aoppb, and has a radioactive α particle count of 0.2 CP H/cm” or less. Tin with a low count of radioactive α particles characterized by: (2) Tin with a grade of 99.95 → i highest as an anode;
The liquid composition is 8n: 30-150 f/4. Su, +1
/7 Ami/[[30~200 Ff/6 Te1141.
) l/# line note is cathode 'torque end 11 60, 5~2.
OAmp/dm'', liquid 4[: -m gold at 15 to 50°C, a method for producing tin with a low radioactive alpha particle count;
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17268882A JPS5964790A (en) | 1982-10-01 | 1982-10-01 | Tin with a low radioactive alpha particle count and its manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17268882A JPS5964790A (en) | 1982-10-01 | 1982-10-01 | Tin with a low radioactive alpha particle count and its manufacturing method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5964790A true JPS5964790A (en) | 1984-04-12 |
JPS621478B2 JPS621478B2 (en) | 1987-01-13 |
Family
ID=15946510
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17268882A Granted JPS5964790A (en) | 1982-10-01 | 1982-10-01 | Tin with a low radioactive alpha particle count and its manufacturing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5964790A (en) |
Cited By (6)
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---|---|---|---|---|
JP5456881B2 (en) * | 2010-03-16 | 2014-04-02 | Jx日鉱日石金属株式会社 | Method for producing tin or tin alloy with low alpha dose |
US9597754B2 (en) | 2011-03-07 | 2017-03-21 | Jx Nippon Mining & Metals Corporation | Copper or copper alloy, bonding wire, method of producing the copper, method of producing the copper alloy, and method of producing the bonding wire |
US9666547B2 (en) | 2002-10-08 | 2017-05-30 | Honeywell International Inc. | Method of refining solder materials |
US10030315B2 (en) * | 2015-11-24 | 2018-07-24 | International Business Machines Corporation | Separation of alpha emitting species from plating baths |
US10287698B2 (en) | 2015-11-24 | 2019-05-14 | International Business Machines Corporation | Separation of alpha emitting species from plating baths |
US10711358B2 (en) | 2014-02-20 | 2020-07-14 | Jx Nippon Mining & Metals Corporation | Method of producing low alpha-ray emitting bismuth, and low alpha-ray emitting bismuth |
Families Citing this family (4)
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---|---|---|---|---|
CN101213326B (en) | 2005-07-01 | 2010-11-17 | 日矿金属株式会社 | High-purity tin or tin alloy and manufacturing method of high-purity tin |
US20160097139A1 (en) | 2014-10-02 | 2016-04-07 | Jx Nippon Mining & Metals Corporation | Method For Manufacturing High Purity Tin, Electrowinning Apparatus For High Purity Tin And High Purity Tin |
US10400342B2 (en) | 2015-10-19 | 2019-09-03 | Jx Nippon Mining & Metals Corporation | High purity tin and method for manufacturing same |
CN110565115B (en) | 2016-03-09 | 2022-04-05 | Jx金属株式会社 | High purity tin |
-
1982
- 1982-10-01 JP JP17268882A patent/JPS5964790A/en active Granted
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9666547B2 (en) | 2002-10-08 | 2017-05-30 | Honeywell International Inc. | Method of refining solder materials |
JP5456881B2 (en) * | 2010-03-16 | 2014-04-02 | Jx日鉱日石金属株式会社 | Method for producing tin or tin alloy with low alpha dose |
JP2014088621A (en) * | 2010-03-16 | 2014-05-15 | Jx Nippon Mining & Metals Corp | LOW α-DOSE TIN OR TIN ALLOY AND METHOD FOR PRODUCING THE SAME |
US9394590B2 (en) | 2010-03-16 | 2016-07-19 | Jx Nippon Mining & Metals Corporation | Low α-dose tin or tin alloy, and method for producing same |
US9597754B2 (en) | 2011-03-07 | 2017-03-21 | Jx Nippon Mining & Metals Corporation | Copper or copper alloy, bonding wire, method of producing the copper, method of producing the copper alloy, and method of producing the bonding wire |
US10711358B2 (en) | 2014-02-20 | 2020-07-14 | Jx Nippon Mining & Metals Corporation | Method of producing low alpha-ray emitting bismuth, and low alpha-ray emitting bismuth |
US10138568B2 (en) | 2015-11-24 | 2018-11-27 | International Business Machines Corporation | Separation of alpha emitting species from plating baths |
US10167568B2 (en) | 2015-11-24 | 2019-01-01 | International Business Machines Corporation | Separation of alpha emitting species from plating baths |
US10287698B2 (en) | 2015-11-24 | 2019-05-14 | International Business Machines Corporation | Separation of alpha emitting species from plating baths |
US10287702B2 (en) | 2015-11-24 | 2019-05-14 | International Business Machines Corporation | Separation of alpha emitting species from plating baths |
US10458033B2 (en) | 2015-11-24 | 2019-10-29 | International Business Machines Corporation | Separation of alpha emitting species from plating baths |
US10577703B2 (en) | 2015-11-24 | 2020-03-03 | International Business Machines Corporation | Separation of alpha emitting species from plating baths |
US10030315B2 (en) * | 2015-11-24 | 2018-07-24 | International Business Machines Corporation | Separation of alpha emitting species from plating baths |
Also Published As
Publication number | Publication date |
---|---|
JPS621478B2 (en) | 1987-01-13 |
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