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JPS5951086B2 - dielectric porcelain material - Google Patents

dielectric porcelain material

Info

Publication number
JPS5951086B2
JPS5951086B2 JP52144271A JP14427177A JPS5951086B2 JP S5951086 B2 JPS5951086 B2 JP S5951086B2 JP 52144271 A JP52144271 A JP 52144271A JP 14427177 A JP14427177 A JP 14427177A JP S5951086 B2 JPS5951086 B2 JP S5951086B2
Authority
JP
Japan
Prior art keywords
dielectric
temperature
dielectric porcelain
dielectric constant
porcelain material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP52144271A
Other languages
Japanese (ja)
Other versions
JPS5477000A (en
Inventor
俊一郎 河島
正光 西田
一朗 上田
宏 大内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP52144271A priority Critical patent/JPS5951086B2/en
Publication of JPS5477000A publication Critical patent/JPS5477000A/en
Publication of JPS5951086B2 publication Critical patent/JPS5951086B2/en
Expired legal-status Critical Current

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Description

【発明の詳細な説明】 本発明は誘電体磁器材料、特にBaO−MgO、ZnO
、Ta。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to dielectric ceramic materials, particularly BaO-MgO, ZnO
, Ta.

O。の成分で構成される誘電体共振器などに使用される
磁器材料に関するものであり、誘電率(ε)が大きく、
無負荷Qが大きく、さらに共振周波数の温度安定度(τ
f)の優れたマイクロ波用誘電体共振器を構成し得る誘
電体磁器材料を提供しようとするものである。従来から
、マイクロ波領域において、マイクロ波回路のインピー
ダンス整合や、誘電体共振器などに、誘電体が応用され
ている。
O. This relates to ceramic materials used in dielectric resonators, etc., which have a large dielectric constant (ε) and
The no-load Q is large, and the temperature stability of the resonant frequency (τ
f) It is an object of the present invention to provide a dielectric ceramic material that can constitute an excellent microwave dielectric resonator. Conventionally, dielectrics have been applied in the microwave region to impedance matching of microwave circuits, dielectric resonators, and the like.

近年、特に、マイクロ波回路の集積化の技術が進歩する
にともない、発振器の周波数の安定化などに、高誘電率
、低損失、低価格の誘電体磁器を使用して、電子機器を
小形化することが積極的に進められている。これまで、
この積の誘電体材料としては、BaO−TiO、系磁器
、および、この元素の一部を他の元素で置換した磁器、
さらには誘電率が負の温度変をもつTiO。と正の誘電
率の温度変化をもつ誘・電体磁器とを組合わせたものを
使用する場合が多い。
In recent years, especially as the technology for integrating microwave circuits has progressed, electronic devices have been made smaller by using dielectric ceramics with high dielectric constant, low loss, and low cost to stabilize the frequency of oscillators. This is being actively pursued. Until now,
Dielectric materials with this product include BaO-TiO, ceramics, and ceramics in which some of these elements are replaced with other elements.
Furthermore, TiO has a negative dielectric constant that changes with temperature. In many cases, a combination of dielectric and electric ceramics with a positive dielectric constant that changes with temperature is used.

しかし、これらは、誘電体損失が大きかつたり、誘電率
の温度変化のばらつきが大きかつたり、あるいは共振周
波数の温度安定度が大きすぎたりするという欠点がある
However, these have drawbacks such as large dielectric loss, large variations in temperature change in dielectric constant, or too large temperature stability of resonant frequency.

また、共振周波数の温度係数を変化させようとすると、
Qがいちぢるしく低下するなど、実用上の問題が多い。
本発明はこれらの欠点を除いたものであり、一般式3B
aO−xMgO・(1−x)ZnO−Ta2O5でj表
わされる組成において、0.01≦X≦0.99の範囲
内にある組成の磁器材料が、優れた誘電体マイクロ波共
振器になることを見祝したことにもとづくものである。
Also, if you try to change the temperature coefficient of the resonant frequency,
There are many practical problems, such as a significant drop in Q.
The present invention eliminates these drawbacks, and the general formula 3B
In the composition j represented by aO-xMgO.(1-x)ZnO-Ta2O5, a ceramic material with a composition within the range of 0.01≦X≦0.99 becomes an excellent dielectric microwave resonator. It is based on the celebration of the.

以下、実施例にもとづいて、本発明を説明する。Hereinafter, the present invention will be explained based on Examples.

まず、BaCO。First, BaCO.

、MgO、ZnOおよびTa。O。の出発原料を各組成
に応じて秤量し、めのうボールを備え、かつゴム内張り
したボールミルを用いて、純水とともに、湿式混合した
。この混合物をボール′ミルより取り出して乾燥してか
ら、空気中において1100℃で2時間仮焼した後、ボ
ールミルで湿式粉砕した。ボールミルから粉砕泥しよう
を取り出し、これを乾燥した後、圧力700kg/cm
2で直径25mmの円板に成形し、それを1400〜1
550℃の範囲内の門温度で2時間、空気中において焼
成して、下表に示す組成の誘電体磁器を得た。次に、各
磁器から直径5用型、厚さ2用型の寸法の円板形磁器の
試料を切出し、その共振周波数(ほぼ11G圧)と直径
から誘電率(ε)を、また帯域反射法により無負荷Q(
Qu)を測定した。
, MgO, ZnO and Ta. O. The starting materials were weighed according to each composition and wet-mixed with pure water using a ball mill equipped with an agate ball and lined with rubber. This mixture was taken out of the ball mill, dried, calcined in air at 1100° C. for 2 hours, and then wet-pulverized in a ball mill. After taking out the crushed slurry from the ball mill and drying it, the pressure was 700 kg/cm.
2 to form a disc with a diameter of 25 mm, and then
Firing was performed in air at a gate temperature within the range of 550° C. for 2 hours to obtain dielectric porcelain having the composition shown in the table below. Next, a disc-shaped porcelain sample with dimensions of 5 diameter and 2 thickness was cut out from each piece of porcelain, and its resonant frequency (approximately 11 G pressure) and diameter were used to determine the dielectric constant (ε), and the band-reflection method was used. The unloaded Q(
Qu) was measured.

共振周波数の温度安定度(τf)については、温度槽に
各試料を入れ、−30℃から+70℃の温度変化におけ
るトラツプ周波数の変化を測定して求めた。その結果を
下表に示す。xは3Ba0・XMgO・ (1−x)Z
nO−Ta2O5の組成比率を示す。
The temperature stability (τf) of the resonance frequency was determined by placing each sample in a temperature bath and measuring the change in trap frequency as the temperature changed from -30°C to +70°C. The results are shown in the table below. x is 3Ba0・XMgO・(1-x)Z
The composition ratio of nO-Ta2O5 is shown.

表より明らかなように、本発明の誘電体磁器材料は、マ
イクロ波領域において、無負荷Qが大きく、誘電率が比
較的大きく、さらに共振周波数の温度安定度の改善され
た優れたものであることがわかる。
As is clear from the table, the dielectric ceramic material of the present invention has a large no-load Q, a relatively large dielectric constant, and is excellent in the temperature stability of the resonance frequency in the microwave region. I understand that.

なお、本発明にかかる磁器は、低周波領域においても誘
電損失が小さく、かつ誘電率の温度変化が小さいので、
磁器コンデンサ用としても優れた材料であることを確認
した。
In addition, the porcelain according to the present invention has small dielectric loss even in the low frequency range and small temperature change in dielectric constant, so
It was confirmed that it is an excellent material for ceramic capacitors.

Claims (1)

【特許請求の範囲】[Claims] 1 一般式3BaO・xMgO・(1−x)ZnO・T
a_2O_5で表わされる組成において、0.01≦x
≦0.99の範囲内にある組成であることを特徴とする
誘電体磁器材料。
1 General formula 3BaO・xMgO・(1-x)ZnO・T
In the composition represented by a_2O_5, 0.01≦x
A dielectric ceramic material characterized by having a composition within the range of ≦0.99.
JP52144271A 1977-11-30 1977-11-30 dielectric porcelain material Expired JPS5951086B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52144271A JPS5951086B2 (en) 1977-11-30 1977-11-30 dielectric porcelain material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52144271A JPS5951086B2 (en) 1977-11-30 1977-11-30 dielectric porcelain material

Publications (2)

Publication Number Publication Date
JPS5477000A JPS5477000A (en) 1979-06-20
JPS5951086B2 true JPS5951086B2 (en) 1984-12-12

Family

ID=15358198

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52144271A Expired JPS5951086B2 (en) 1977-11-30 1977-11-30 dielectric porcelain material

Country Status (1)

Country Link
JP (1) JPS5951086B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021020442A1 (en) 2019-07-31 2021-02-04 株式会社ニコン Information processing system, information processing device, information processing method, and program
WO2021020444A1 (en) * 2019-07-31 2021-02-04 株式会社ニコン Information processing system, information processing device, information processing program, and information processing method
WO2021020443A1 (en) 2019-07-31 2021-02-04 株式会社ニコン Information processing system, information processing device, image acquisition device, information processing method, image acquisition method, and program

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61107609A (en) * 1984-10-30 1986-05-26 住友金属鉱山株式会社 Manufacture of high frequency dielectric porcelain
JPH0617263B2 (en) * 1988-09-30 1994-03-09 住友金属鉱山株式会社 Dielectric porcelain composition
EP0782976A4 (en) * 1994-09-20 1998-02-11 Sumitomo Metal Ind Dielectric porcelain composition and process for producing the same
CN110698200A (en) * 2019-10-18 2020-01-17 天津大学 high-Q-value microwave dielectric material

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021020442A1 (en) 2019-07-31 2021-02-04 株式会社ニコン Information processing system, information processing device, information processing method, and program
WO2021020444A1 (en) * 2019-07-31 2021-02-04 株式会社ニコン Information processing system, information processing device, information processing program, and information processing method
WO2021020443A1 (en) 2019-07-31 2021-02-04 株式会社ニコン Information processing system, information processing device, image acquisition device, information processing method, image acquisition method, and program

Also Published As

Publication number Publication date
JPS5477000A (en) 1979-06-20

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