JPS59145940A - Differential pressure and pressure transmitting device - Google Patents
Differential pressure and pressure transmitting deviceInfo
- Publication number
- JPS59145940A JPS59145940A JP1948183A JP1948183A JPS59145940A JP S59145940 A JPS59145940 A JP S59145940A JP 1948183 A JP1948183 A JP 1948183A JP 1948183 A JP1948183 A JP 1948183A JP S59145940 A JPS59145940 A JP S59145940A
- Authority
- JP
- Japan
- Prior art keywords
- diaphragm
- pressure
- measuring
- thick
- measurement
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
Description
【発明の詳細な説明】
a、産業上の利用分野
本発明は、差圧・圧力伝送器の改良に閂し、特に測定ダ
イアフラムを過大圧から保護する機構を持つ差圧・圧力
伝送器の改良に関する。DETAILED DESCRIPTION OF THE INVENTION a. Field of Industrial Application The present invention relates to the improvement of differential pressure/pressure transmitters, and particularly to the improvement of differential pressure/pressure transmitters having a mechanism for protecting the measuring diaphragm from excessive pressure. Regarding.
b、従来例
前記測定ダイアフラムを過大圧から保護する機構を持つ
従来装置として特開昭53−79582号に示す如きも
のが知られている。第1図は前記公知例における差圧伝
送器を示す。本図において1.2は差圧伝送器本体を形
成する部材で、外側端面3,4に夫々受圧ダイアフラム
5,6が取り付けられている。部材1,2の突き合せ面
の中央部分には夫々凹部が形成されている。7は過大圧
保護用の補償ダイアフラムで前記突き合せ面の外周端面
により保持され、前記凹部によって形成された空間を2
つの補償室8.9に分割する。b. Conventional Example A conventional device having a mechanism for protecting the measuring diaphragm from excessive pressure is known as shown in Japanese Patent Application Laid-open No. 79582/1982. FIG. 1 shows the differential pressure transmitter in the known example. In this figure, 1.2 is a member forming the main body of the differential pressure transmitter, and pressure receiving diaphragms 5 and 6 are attached to outer end surfaces 3 and 4, respectively. A recess is formed in the center of the abutting surfaces of the members 1 and 2, respectively. 7 is a compensating diaphragm for overpressure protection, which is held by the outer peripheral end surface of the abutting surface and covers the space formed by the recessed portion 2.
Divided into two compensation chambers 8.9.
10.11は受圧ダイアフラム5,6と部材1゜2の外
側端面3,4との間に夫々形成された受圧室である。受
圧室10と補償室8とは通路12によって接続され、受
圧室11と補償室9とは通路13によって接続されてい
る。Reference numerals 10 and 11 denote pressure receiving chambers formed between the pressure receiving diaphragms 5 and 6 and the outer end surfaces 3 and 4 of the member 1.degree. 2, respectively. The pressure receiving chamber 10 and the compensation chamber 8 are connected by a passage 12, and the pressure receiving chamber 11 and the compensation chamber 9 are connected by a passage 13.
14は部材1内に設けられた測定室で、通路15.16
を介し、通路12.13に夫々接続されている。17は
測定室14中に設けられた、例えげ半導体の測定ダイヤ
フラムである。14 is a measurement chamber provided in the member 1, with passages 15 and 16.
via channels 12 and 13, respectively. Reference numeral 17 denotes a measurement diaphragm made of, for example, a semiconductor, provided in the measurement chamber 14.
補償室8,9.受圧室10,11.、測定室14通路1
2,13,15.16には非圧縮性の封液例えにシリコ
ン油が充填されている。Compensation room 8, 9. Pressure receiving chambers 10, 11. , measurement chamber 14 passage 1
2, 13, 15, and 16 are filled with incompressible sealing liquid, such as silicone oil.
このような装置において、例えば受圧ダイア72ム5に
高圧側圧力pT(が、受圧ダイア72ムロに低圧側圧力
Pr+が加えられると、夫々の受圧ダイアフラノ、に加
えられた圧力は封液を介し測定ダイアフラム17及び補
償ダイアプラム7に加わり圧力P)1.PLの差圧に応
じて測定ダイアフラム17を変位させる。In such a device, for example, when a high pressure side pressure pT is applied to the pressure receiving diaphragm 5, but a low pressure side pressure Pr+ is applied to the pressure receiving diaphragm 72, the pressure applied to each pressure receiving diaphragm is measured via a sealing liquid. Pressure P) applied to diaphragm 17 and compensating diaphragm 7)1. The measuring diaphragm 17 is displaced according to the differential pressure of PL.
例えば、測定ダイアフラノ、17にシリコンダイアフラ
ムが用いられ、表面(Cピエゾ抵抗素子が拡散により形
成されている半導体測定ダイアプラムの場合、測定ダイ
アフラム17の変位によって前記ピエゾ抵抗素子が歪み
、それKよる抵抗値変化から変位に応じた電気信号が得
られる。For example, in the case of a semiconductor measuring diaphragm in which a silicon diaphragm is used as the measuring diaphragm 17 and a piezoresistive element is formed by diffusion on the surface (C), the displacement of the measuring diaphragm 17 distorts the piezoresistive element, resulting in a resistance value of K. An electrical signal corresponding to the displacement can be obtained from the change.
一方、操作ミス等により過大圧が受圧ダイアフラム5に
加わった場合、受圧ダイアフラム5は変形し、部材1の
外側端面罠密着する。この際受圧ダイア72ム5が押し
のけた封液は、補償ダイアフラム7が脹らみ補償室8の
容積を増大さi勤で吸収する。岡、補償ダイアフラム7
は、受圧ダイアフラム5(6)が過大圧によって外側端
面3(4)に密着しても、その周囲の壁に接触しない寸
法になっている。On the other hand, if excessive pressure is applied to the pressure receiving diaphragm 5 due to an operational error or the like, the pressure receiving diaphragm 5 deforms and comes into close contact with the outer end surface of the member 1. At this time, the sealing liquid displaced by the pressure receiving diaphragm 72 is absorbed by the compensating diaphragm 7 as the volume of the compensating chamber 8 increases. Oka, compensation diaphragm 7
is dimensioned so that even if the pressure receiving diaphragm 5 (6) comes into close contact with the outer end surface 3 (4) due to excessive pressure, it will not come into contact with the surrounding wall.
受圧ダイアフラム5が外側端面3に密着してからはそれ
以上の圧力が加わっても受圧ダイアフラム5は変形する
ことはないので、封液の移動はなく測定ダイアフラム1
7及び補償ダイア7ラム7にそれ以上の圧力が加わるこ
とはない。従って、測定ダイアフラム17の許容圧力内
で受圧、ダイアフラム5,6が外側端面3,4に密着す
るように設定しておけば、過大圧が加わっても、測定ダ
イアフラム17は損傷或り破壊することはない。Once the pressure-receiving diaphragm 5 is in close contact with the outer end surface 3, the pressure-receiving diaphragm 5 will not deform even if more pressure is applied, so the sealing liquid will not move and the measurement diaphragm 1
7 and the compensation dial 7. No further pressure is applied to the ram 7. Therefore, if the pressure is received within the permissible pressure of the measuring diaphragm 17, and the diaphragms 5 and 6 are set in close contact with the outer end surfaces 3 and 4, even if excessive pressure is applied, the measuring diaphragm 17 will not be damaged or destroyed. There isn't.
然しなから、このような差圧伝送器にあっては圧力測定
に直接関与しない接摺部分、即ち、補償ダイアフラム7
、補償室8,9.これらに通ずる通路12.13を設け
る必要があり、構造が複雑となり、この為に小型化が難
かしかった。However, in such a differential pressure transmitter, the contact portion that is not directly involved in pressure measurement, that is, the compensation diaphragm 7
, compensation room 8, 9. It is necessary to provide passages 12 and 13 communicating with these, which complicates the structure and makes it difficult to downsize.
C1発明の目的
本発゛明の解決しようとする技術的課題は測定ダイアフ
ラムの両側或は片側に測定圧力を加え、これら差圧或は
圧力に応じた前記測定ダイアフラムの変位を電気信号に
変換する差圧・圧力伝送器において、前記圧力測定部と
は別に設けられていた過大圧防止機構をなくして、伝送
器を小型化することを目的とする。C1 Objective of the Invention The technical problem to be solved by the present invention is to apply measuring pressure to both sides or one side of a measuring diaphragm, and convert the differential pressure or the displacement of the measuring diaphragm according to the pressure into an electrical signal. The present invention aims to reduce the size of a differential pressure/pressure transmitter by eliminating an overpressure prevention mechanism provided separately from the pressure measuring section.
D0発明の構成
本発明の構成は、■圧力測定部を表面に複数箇所厚肉部
が形成された測定ダイアクラムとこのダイアプラムの片
側または両側に対向配置され、このダイアクラムと共に
室を形成する基板とこれら基板の少くとも一方に設けら
れた測定圧力導入路と、差圧・圧力による前記測定ダイ
アフラムの変位を電気信号に変換する手段とにより構成
し、■過大圧が前記測定ダイアプラムに加わったときこ
のダイアクラムの厚内部が前記基板の壁面に当ってダイ
アプラムを破壊から防止する構造としたことKある。D0 Structure of the Invention The structure of the present invention consists of: (1) a measuring diaphragm having a pressure measuring portion on its surface with a plurality of thick-walled portions formed thereon; a substrate disposed oppositely on one or both sides of the diaphragm and forming a chamber together with the diaphragm; It consists of a measuring pressure introduction path provided on at least one side of the substrate, and a means for converting the displacement of the measuring diaphragm due to differential pressure/pressure into an electrical signal, and when excessive pressure is applied to the measuring diaphragm, The diaphragm has a structure in which the thick inner part of the diaphragm contacts the wall surface of the substrate to prevent the diaphragm from being destroyed.
■1作用 前記の技術的手段は次のように作用する。■1 action The above technical means works as follows.
即ち、前記測定ダイアプラムの両側或は片側に設けられ
た測定室に測定圧力が導びかれると、前記測定ダイアフ
ラムの前記厚肉部の間の薄肉部がたわみ、前記厚肉部と
前記壁面との間隙が変化する。That is, when measurement pressure is introduced into the measurement chambers provided on both sides or one side of the measurement diaphragm, the thin wall portion between the thick wall portions of the measurement diaphragm is bent, and the contact between the thick wall portion and the wall surface is caused to bend. The gap changes.
前記測定ダイアクラムの変位は、例えば薄肉部に設けら
れたピエゾ抵抗の抵抗値変化として、或は前記厚内部を
導電性部材とし前記壁面に電極を設けてこれらの間の容
を変化として検出される。The displacement of the measurement diaphragm is detected, for example, as a change in the resistance value of a piezoresistor provided in the thin part, or as a change in the capacitance between the thick interior using a conductive member and electrodes provided on the wall surface. .
過大圧が加わった場合、前記厚内部が前記壁面に当る迄
、前記薄肉部はたわみ続ける。前記厚肉部が前記壁面に
@るとそれ以上たわまない。過大圧に十分耐えられるよ
う前記薄肉部の幅、厚さが選択されるならば、前記測定
ダイアクラムは破壊することはない。When excessive pressure is applied, the thin portion continues to flex until the thick interior contacts the wall surface. When the thick portion touches the wall surface, it will not bend any further. If the width and thickness of the thin section are selected to be sufficient to withstand excessive pressure, the measuring diaphragm will not be destroyed.
F、実施例
以下図面に従い本発明の詳細な説明す
る。第2図は本発明における圧力測定部を示す縦断面図
、第3図は第2図に示す測定ダイアフラムをA−A面に
よって切断したダイアツーラムの横断面図、第4図は第
2図に示す圧力測定部を備えた本発明における差圧伝送
器の断面図である。 ′先ず、第2図、第3図におい
て、18は測定ダイアフラムで、中心の円板状の厚肉部
18aを囲むように、同心円上に複数の環状の厚肉部1
sb18C!75!Gけられている。測定ダイアフラム
18には、単結晶シリコン若しくはNi −5PANO
等の伝導性弾性材料、又はザファイヤの如き絶縁性弾性
材料が用いられ、後者の場合には中央厚肉部18aK電
極用として導電膜を形成する。F. EXAMPLE The present invention will be described in detail below with reference to the drawings. Fig. 2 is a longitudinal sectional view showing the pressure measuring part in the present invention, Fig. 3 is a cross sectional view of the diaphragm shown in Fig. 2 taken along the A-A plane, and Fig. 4 is shown in Fig. 2. FIG. 2 is a cross-sectional view of a differential pressure transmitter according to the present invention including a pressure measuring section. 'First, in FIGS. 2 and 3, reference numeral 18 denotes a measurement diaphragm, which has a plurality of annular thick-walled parts 1 concentrically surrounding a central disk-shaped thick-walled part 18a.
sb18C! 75! G is being kicked. The measurement diaphragm 18 is made of single crystal silicon or Ni-5PANO.
A conductive elastic material such as Zapphire or an insulating elastic material such as Zaphire is used, and in the latter case, a conductive film is formed for the central thick portion 18aK electrode.
19.20は、測定ダイアフラム18の両面に対向して
設けられた、パイレックスガラス、セラミック等の絶縁
性基板で、測定ダイアフラム18の周縁厚肉部18(l
において陽極接合等圧よって固着されている。これ等基
板には高圧側圧力導入路19a、低圧側圧力導入路20
aが設けられ、測定ダイアフラム18の両側に測定室2
1.22を形成する。Reference numeral 19.20 denotes an insulating substrate made of Pyrex glass, ceramic, etc., which is provided opposite both sides of the measurement diaphragm 18, and is connected to the thick peripheral portion 18 (l) of the measurement diaphragm 18.
It is fixed by anodic bonding and isostatic pressure. These boards include a high pressure side pressure introduction path 19a and a low pressure side pressure introduction path 20.
a is provided, and measurement chambers 2 are provided on both sides of the measurement diaphragm 18.
1.22 is formed.
23.24杖夫り基板19.20の中央部に、測定ダイ
アフラム18の厚肉部23に対向して設けられた電極で
、金又はアルミニウムが用いられる。。23.24 An electrode is provided in the center of the vertical substrate 19.20, facing the thick part 23 of the measuring diaphragm 18, and is made of gold or aluminum. .
25.26は測定ダイアフラム18の厚肉部181)、
180に対向して基板19上に設けられた環状のストッ
パー、27.28は同じく厚肉部1sb、1scK対向
して基板20上に設けられた環状のストッパーである。25 and 26 are thick portions 181) of the measurement diaphragm 18;
An annular stopper 27 and 28 is provided on the substrate 19 opposite to 180, and an annular stopper 27 and 28 is provided on the substrate 20 opposite to the thick portions 1sb and 1scK.
第4図は第2図で説明した圧力測定部を具備する本発明
における差圧伝送器である。本図において、29.30
は差圧伝送器本体を形成する部材で、外側端面31,3
2に夫々受圧ダイアフラム33.34が取り付けられて
いる。部材29゜30の突き合せ面の中央部分KFi夫
々四部が形成され、これら四部によって形成された空所
35に第2図で説明した圧力測定部が配信される。FIG. 4 shows a differential pressure transmitter according to the present invention, which includes the pressure measuring section described in FIG. 2. In this figure, 29.30
is a member forming the main body of the differential pressure transmitter, and the outer end surfaces 31, 3
Pressure-receiving diaphragms 33 and 34 are attached to 2, respectively. Four central portions KFi of the abutting surfaces of the members 29 and 30 are formed, and the pressure measuring portion described in FIG. 2 is distributed in the cavity 35 formed by these four portions.
36け、受圧ダイアフラム33と部側29の外側端面3
1との間に形成された受圧室37と前配圧力測定部の高
圧側圧力導入路19aとの間に設けられた通路、38け
、受圧ダイアフラム34と部利30の外側端面32との
間に形成された受圧宿39と空所35との間に形成され
た通路である。36 pieces, pressure receiving diaphragm 33 and outer end surface 3 of part side 29
1, a passage provided between the pressure receiving chamber 37 formed between the pressure receiving diaphragm 34 and the high pressure side pressure introduction path 19a of the front distribution pressure measuring section, 38, between the pressure receiving diaphragm 34 and the outer end surface 32 of the part 30. This is a passage formed between the pressure receiving chamber 39 and the cavity 35.
同、前記圧力測定部の低圧側圧力導入路20aは空所3
5で開口している。Similarly, the low-pressure side pressure introduction path 20a of the pressure measuring section is the hollow space 3.
It is open at 5.
40け前記圧力測定部からのリ−・ド紳で、1本V測定
ダイアフラム18から引き出され、残りは基板19.2
0に設けられた電極23.24から引き出されたもので
ある。Of the 40 leads from the pressure measuring section, one is pulled out from the V measuring diaphragm 18, and the rest are connected to the substrate 19.2.
It is drawn out from electrodes 23 and 24 provided at 0.
伺、空所35.受圧室37,39.通路36゜38内に
は非圧縮性の封液、例えばシリコン油が充填されている
。Sorry, blank space 35. Pressure receiving chambers 37, 39. The passages 36 and 38 are filled with an incompressible sealing liquid, such as silicone oil.
次に、この実施例装置の動作について説明する。Next, the operation of this embodiment device will be explained.
受圧ダイアフラム33に高圧側圧力pHを受け、受圧ダ
イアフラム34に低圧側圧力PLを受けると封液を介し
測定ダイア7ラム18にこれら圧力が伝達される。測定
ダイアフラム18では、厚肉部18a、、18b、18
0及び周縁厚肉部184の間の薄肉部において歪みが生
じ、測定ダイアフラム18を変位させる。これKより、
中央厚肉部18aとff1Th23.24間の間隙が変
化し、この間の静電容量の変化から差圧に応じた電気信
号を得る。When the pressure receiving diaphragm 33 receives the high pressure side pressure pH and the pressure receiving diaphragm 34 receives the low pressure side pressure PL, these pressures are transmitted to the measuring diaphragm 7 ram 18 via the sealing liquid. In the measurement diaphragm 18, the thick parts 18a, 18b, 18
A strain occurs in the thin section between 0 and the peripheral thick section 184, displacing the measuring diaphragm 18. This is from K.
The gap between the central thick portion 18a and ff1Th23.24 changes, and an electrical signal corresponding to the differential pressure is obtained from the change in capacitance during this time.
一方、操作ミス笠により過大圧が加わると測定ダイアフ
ラム18は、厚肉部18al 18b。On the other hand, if excessive pressure is applied due to a misoperation, the measuring diaphragm 18 will be damaged by the thick portions 18al and 18b.
18Cが基板19或は21C当る迄たわみ、これある最
大の過大圧に充分耐え得る寸法にする必要がある。工業
計測用の差圧伝送器にあっては、300〜程度が過大圧
の最大値であるから、このような過大圧に耐えられる寸
法圧しておく必要がある。例えば、測定ダイアフラム1
8に単結晶シリコンを用いたならば、半導体製造技術の
エツチング法が利用でき、前記薄肉部の厚さ、厚肉部1
8 a、18 b、180の幅をきわめて精度良くコン
トロールすることが出来る。It is necessary to have a size that can flex until 18C touches the substrate 19 or 21C and can withstand the maximum excessive pressure. In a differential pressure transmitter for industrial measurement, the maximum value of excessive pressure is about 300 or more, so it is necessary to have a size and pressure that can withstand such excessive pressure. For example, measuring diaphragm 1
If single-crystal silicon is used for 8, the etching method of semiconductor manufacturing technology can be used, and the thickness of the thin part 1, the thickness of the thick part 1
The widths of 8a, 18b, and 180 can be controlled with extremely high precision.
岡、測定ダイアフラム18の厚肉部18aが基板19或
け20上の電極23.24に接触するとこの間が短絡さ
れ出力が不確定な状態に陥る場合がある。このような状
態を避ける為、出力回路の構成によって、前記短絡事故
が起きた場合、出力を例えば高側に振り切らせてしまう
方法がある。However, if the thick portion 18a of the measurement diaphragm 18 comes into contact with the electrodes 23, 24 on the substrate 19 or 20, a short circuit may occur between them and the output may become uncertain. In order to avoid such a situation, there is a method of changing the configuration of the output circuit so that when the short circuit accident occurs, the output is swung to the high side, for example.
この他の簡便な方法として、測定ダイアフラム18の表
面に絶縁膜を形成する方法がある。因苓に、Fl+定ダ
イアフラム18の厚肉部18aと外、杼2B、24間の
間隙は5ミクロン程度であり、測定ダイアフラムI8に
単結晶シリコンを用い表面にシリコン酸化膜を形成した
場合、この膜の厚さは0.4ミクロン程度で、理想的な
絶縁膜が形成でき前記短!@事故を防ぐことが出来る。Another simple method is to form an insulating film on the surface of the measurement diaphragm 18. Specifically, the gap between the thick part 18a of the Fl+ constant diaphragm 18 and the outer shuttle 2B, 24 is about 5 microns, and when the measurement diaphragm I8 is made of single crystal silicon and a silicon oxide film is formed on the surface, this gap is approximately 5 microns. The thickness of the film is approximately 0.4 microns, making it possible to form an ideal insulating film. @Accidents can be prevented.
加えて、このような絶縁膜を形成した場合、測定ダイア
フラム18の厚内部18aと電極23或24間に導電性
のチリが入り込んで起る短絡事故も防ぐことが出来る。In addition, when such an insulating film is formed, short circuit accidents caused by conductive dust entering between the thick inside 18a of the measurement diaphragm 18 and the electrodes 23 or 24 can be prevented.
以下本発明の他の実施例について説明する。第5図は前
記圧力測定部が抵抗式の場合のセンザ部の断面図である
。本図において、第2図における要素と同じものKは同
じ符号を付し、説明は省略する。41.42は厚肉部1
8aに対向し、基板19.20上に夫々設けられたスト
ッパー、43゜44は測定ダイアフラム18のv、ケ悶
部に設けられた歪抵抗素子である。こilら歪抵抗素子
は熱着若しくは貼布され、又は測定ダイアフラノ、18
が単結Aシリコンの場合Ki[導体!!造技術を用いて
拡散形成される。Other embodiments of the present invention will be described below. FIG. 5 is a sectional view of the sensor section when the pressure measuring section is of a resistance type. In this figure, elements K that are the same as those in FIG. 2 are denoted by the same reference numerals, and explanations thereof will be omitted. 41.42 is thick part 1
8a, stoppers 43 and 44 are provided on the substrates 19 and 20, respectively, and 44 are strain resistance elements provided on the v and jaw portions of the measuring diaphragm 18. These strain resistance elements are thermally bonded or pasted, or a measuring diaphragm, 18
If is single A silicon, then Ki [conductor! ! Diffusion formation using manufacturing techniques.
差圧を受けて測定ダイアプラム18の前記薄肉部がたわ
むと、歪抵抗素子43.44の抵抗値が変化し電気信号
として検出される。同、過大圧に対する保設の様子り第
2図における場合と全く同じである。When the thin portion of the measurement diaphragm 18 bends in response to the differential pressure, the resistance values of the strain resistance elements 43 and 44 change, which is detected as an electrical signal. Similarly, the manner of preservation against excessive pressure is exactly the same as in the case shown in FIG.
、 第6図は測定ダイアフラノ、18の厚肉部18a。, FIG. 6 shows the thick part 18a of the measurement diaphragm 18.
1、Rb、180がダイアフラムの片面にだけ現れるよ
うに形成した容量式の圧力測定部の縦断面図である。本
図において、第2図における要素と同じものには同一符
号が付されている。1, Rb, and 180 are longitudinal cross-sectional views of a capacitive pressure measuring section formed so that they appear only on one side of a diaphragm. In this figure, the same elements as in FIG. 2 are given the same reference numerals.
本具体例の場合も、過大圧に対する保腰の様子は第2図
或は第5図における場合と実質的に同じである。In the case of this specific example as well, the manner of maintaining stability against excessive pressure is substantially the same as in the case of FIG. 2 or FIG. 5.
第7図は測定ダイアフラム18の片面にだけ対向して電
極が設けられた単一容量式の圧力測定部の断面図である
。本図において、第2図、第6図における要素と同じも
のには同一符号が付されている。45け、測定ダイアフ
ラム18の周縁厚肉fli+ I Rdを一部切り欠い
て形成しfcR状の空所、46はこの空所においてF’
l定ダイアプラム18に一定闘隔おいて対向する基板1
9上に設けられた環状負極である。FIG. 7 is a cross-sectional view of a single capacitance type pressure measuring section in which electrodes are provided on only one side of the measuring diaphragm 18 facing each other. In this figure, the same elements as those in FIGS. 2 and 6 are given the same reference numerals. 45 is an fcR-shaped cavity formed by partially cutting out the peripheral thick wall fli+I Rd of the measurement diaphragm 18, and 46 is an F' in this cavity.
A substrate 1 facing the constant diaphragm 18 at a constant distance.
9 is an annular negative electrode provided on the top.
この呵j、極と対向する測定ダイアフラム18部分は周
FJl’F、肉部分1B+1の延長部分であり差圧によ
って変位せず、これらの間の靜電容貴は変化しない。こ
の部分の容量は厚肉部18aと電極23間の容量変化を
測定する際の基準容量として利用される。The portion of the measuring diaphragm 18 facing the pole is an extension of the circumference FJl'F and the flesh portion 1B+1, and is not displaced by the differential pressure, and the electrostatic capacity between them does not change. The capacitance of this portion is used as a reference capacitance when measuring the capacitance change between the thick portion 18a and the electrode 23.
第8図は測定ダイアフラム18の他の具体例を示す、ダ
イアフラノ・部分の横断面図である。測定ダイアフラム
18の中間厚肉部分18t)、180ハ環状に限らず、
本図におけるようなドツト状の厚肉部18eであっても
かまわない。FIG. 8 is a cross-sectional view of a diaphragm section showing another example of the measuring diaphragm 18. The intermediate thick portion 18t) of the measurement diaphragm 18 is not limited to the 180mm annular shape,
It may be a dot-shaped thick portion 18e as shown in this figure.
第9図は測定ダイアフラム18の更に他の具体例を示す
、ダイアフラム部分の横断面図である。FIG. 9 is a cross-sectional view of a diaphragm portion showing still another specific example of the measurement diaphragm 18.
本図の具体例では測定ダイアフラム18の全体形状並び
に厚肉部18/、18り、18hが角形に形成されてい
る。このような形状は、測定ダイアフラム18に単結晶
シリコンを用いた場合、異方性エツチングにより容易に
加工することが出来る。In the specific example shown in this figure, the overall shape of the measurement diaphragm 18 and the thick portions 18/, 18, and 18h are formed into a rectangular shape. Such a shape can be easily fabricated by anisotropic etching when single crystal silicon is used for the measurement diaphragm 18.
これ迄の測定ダイアフラム18の具体例は何れも中心の
厚肉部を囲んで厚肉部が形成され、最外周部が厚肉部罠
なっているものであったが、これに限らず、周縁が薄肉
に形成されたものであっても測定ダイアフラム18とし
て用いることが出来る。In all of the specific examples of the measuring diaphragm 18 up to now, a thick wall part is formed surrounding a central thick wall part, and the outermost periphery is a thick wall trap. Even if the diaphragm is formed thin, it can be used as the measurement diaphragm 18.
第10図はこのような測定ダイアクラム18を用いた容
量式の圧力測定部の縦断面図である。本図において第2
図と同じ要素には同一符号が付されている。FIG. 10 is a longitudinal sectional view of a capacitive pressure measuring section using such a measuring diaphragm 18. In this figure, the second
Elements that are the same as in the figures are given the same reference numerals.
19’、20’は中心部に凹部が形成された絶縁基板で
、凹部に電極23,24、ストッパー25.25,27
.28が設けられる。測定ダイアフラム18と絶縁基板
19’、20’ とは測定ダイアプラム18の周縁薄肉
部181において陽41?=IP+合等によって接合さ
れる。19' and 20' are insulating substrates with a recess formed in the center, and electrodes 23, 24 and stoppers 25, 25, 27 are provided in the recess.
.. 28 are provided. The measuring diaphragm 18 and the insulating substrates 19', 20' are connected to each other at the peripheral thin portion 181 of the measuring diaphragm 18. =IP+joint, etc.
陽極接合の場合は上記周縁部は強固に接合されるため、
測定ダイアフラム18の変位によって接合部の内側周縁
部に繰り返し応力が加えられても接合が離れることはな
い。In the case of anodic bonding, the above peripheral edge is firmly bonded, so
Even if repeated stress is applied to the inner periphery of the joint by displacement of the measuring diaphragm 18, the joint will not come apart.
本具体例の場合も、過大圧に対する促成の様子は第2
tl 、第5図乃至第7図に示す具体例の場合と実質的
に同じである。In the case of this specific example, the appearance of acceleration against excessive pressure is similar to that of the second
tl is substantially the same as in the specific examples shown in FIGS. 5 to 7.
冑、測定ダイアフラム18は中心部と周縁部とではその
変位世が違うから、これに関連させて厚肉部18a、1
8b・・・が当る基板19.20上の部分、即ち、スト
ッパー25.26・・・、ff極23゜24部分の厚さ
または厚肉部18a、18b・・・の高さをn’R?’
iiずれに、更に測定ダイアフラム18の過大圧保燕が
児全なものとなる。Since the displacement of the measurement diaphragm 18 is different between the central part and the peripheral part, in relation to this, the thick parts 18a and 1
The thickness of the parts on the substrate 19, 20 that are hit by the parts 8b, . ? '
In addition to the misalignment, excessive pressure retention of the measuring diaphragm 18 becomes a problem.
又、上記した本発明の実施例は何れも測定ダイアフラム
18の両側に測定圧力が導入され、これらの差圧を測定
する差圧伝送器の場合であったがとれに限らず、?Il
+1定ターイブタ−イアフラム18た6両側に基板を対
向配置し、ダイアプラムの一方側にだけ沖1定圧力を加
え他方側は基準圧、或は大気圧を加えるようKした圧力
伝送器の場合でも何等支障なく本発明を実施出来る。Further, in all of the above-described embodiments of the present invention, measurement pressure is introduced to both sides of the measurement diaphragm 18, and the differential pressure transmitter measures the differential pressure between them, but the present invention is not limited to this. Il
Even in the case of a pressure transmitter in which the substrates are arranged opposite to each other on both sides of the diaphragm 18 and the diaphragm 18, constant pressure is applied to only one side of the diaphragm, and reference pressure or atmospheric pressure is applied to the other side. The present invention can be practiced without any problems.
G0発明の効果
本発明によれば、圧力測定部自身に測定ダイアフラム1
8を過大圧から保膜する機能を持たせた為、これ迄圧力
測定部とけ別に設けられていた過大圧保膜機構が要ら々
くなり、従来のものに比較して伝送器を小型化できる。G0 Effect of the invention According to the invention, the pressure measuring section itself has a measuring diaphragm 1.
8 has a function to protect the membrane from excessive pressure, so the overpressure membrane mechanism that was previously provided separately from the pressure measurement part is no longer necessary, and the transmitter can be made smaller compared to conventional ones. .
更に1過大圧保護機構用の室に充填されていた封液が力
2らなくなった為全体の封液量を少なく出来、封液の熱
膨張による温度誤差を小さく抑えることが出来る。Furthermore, since the sealing liquid filled in the chamber for the overpressure protection mechanism no longer has any force, the total amount of sealing liquid can be reduced, and temperature errors due to thermal expansion of the sealing liquid can be kept small.
更に又、圧力を測定すべき流体が腐蝕性のものでなく、
ごみ等測定ダイア72ム18に損傷を与えるものがそこ
に含まれていない場合K lj、測定ダイアフラム18
で被測定流体を直接受けるti造とすることが出来、受
圧ダイアフラム33.34等が要らなくなる為、この場
合KIi更に伝送器を小型化することが出来る。Furthermore, the fluid whose pressure is to be measured is not corrosive;
If there is no dust or other material that could damage the measurement diaphragm 18, K lj, the measurement diaphragm 18.
In this case, the KIi transmitter can be further downsized since the KIi can be constructed to directly receive the fluid to be measured, and the pressure receiving diaphragms 33, 34, etc. are not required.
tfj:’1面の筒片な説明
第1図り、従来の差圧伝送器を示す縦断面図、第2図は
本発明における圧力測定部を示す縦断面図、第3図は第
2じ1に示す測定ダイアフラムをA−A面で切断したダ
イアプラムの横断面図、第4図は第2図に示す圧力測定
部を具備する本発明における差圧伝送器を示す縦断面図
、第5図乃至第7図並びに第10図は本発明における圧
力測定部の他の具体例を示す縦断面図、第8図及び第9
図は本発明における測定ダイアフラノ、の他の具体fl
lを示1ダイアフラムの横断面図である。tfj:' Explanation of the cylindrical piece on page 1. The first figure is a vertical cross-sectional view showing a conventional differential pressure transmitter. The second figure is a vertical cross-sectional view showing the pressure measuring part in the present invention. The third figure is a second vertical cross-sectional view. FIG. 4 is a cross-sectional view of the measuring diaphragm taken along the A-A plane; FIG. 4 is a vertical cross-sectional view showing the differential pressure transmitter of the present invention equipped with the pressure measuring section shown in FIG. 2; FIG. 7 and 10 are vertical cross-sectional views showing other specific examples of the pressure measuring section in the present invention, and FIGS.
The figure shows another example of the measurement diaphragm according to the present invention.
FIG. 1 is a cross-sectional view of a diaphragm.
18・・・測定ダイアフラノ1、i8a、18b。18...Measurement diaphragm 1, i8a, 18b.
18C!、18θ、18f、18f・・・厚肉部、19
,20.19’ 、20’・・・基板23.24・・・
電極、43.44°°°歪抵抗素子
特許出願人 株式会社 北辰電機製作所代表者清水正
博
第a1ツ1
19α 1918 ど0
第 71’&12ooL
第8図
第9図
8
第110図18C! , 18θ, 18f, 18f...thick part, 19
, 20.19', 20'...substrate 23.24...
Electrode, 43.44°°° Strain resistance element Patent applicant Hokushin Electric Manufacturing Co., Ltd. Representative Masahiro Shimizu No. a1 1 19α 1918 Do0 No. 71'& 12ooL Fig. 8 Fig. 9 Fig. 8 Fig. 110
Claims (1)
、このダイアフラムの片側または両側に対向配置され、
このダイアフラムと共に室を形成する基板と、前記測定
ダイアフラムの片側または両側に測定圧力を導ひく手段
と、差圧或は圧力による前記測定ダイアフラムの変位を
電気信号に変換する手段とからなり、過大圧が前記測定
ダイアフラムに加わったとき前記厚肉部が前記一方の基
板の壁面に当ってダイアフラムの破壊を防ぐ構造の圧力
測定部を具備する差圧・圧力伝送器。A measurement diaphragm with thick-walled parts formed in multiple places on the surface, and a measurement diaphragm arranged opposite to each other on one or both sides of this diaphragm,
It consists of a substrate forming a chamber together with this diaphragm, means for introducing measuring pressure to one or both sides of the measuring diaphragm, and means for converting the displacement of the measuring diaphragm due to differential pressure or pressure into an electrical signal, A differential pressure/pressure transmitter comprising a pressure measuring section having a structure in which the thick portion hits the wall surface of the one substrate to prevent destruction of the diaphragm when applied to the measuring diaphragm.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1948183A JPS59145940A (en) | 1983-02-08 | 1983-02-08 | Differential pressure and pressure transmitting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1948183A JPS59145940A (en) | 1983-02-08 | 1983-02-08 | Differential pressure and pressure transmitting device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS59145940A true JPS59145940A (en) | 1984-08-21 |
Family
ID=12000531
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1948183A Pending JPS59145940A (en) | 1983-02-08 | 1983-02-08 | Differential pressure and pressure transmitting device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59145940A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1997042477A1 (en) * | 1996-05-03 | 1997-11-13 | Thomas Bilger | Micromechanical pressure and force sensor |
JP2002340718A (en) * | 2001-05-16 | 2002-11-27 | Yokogawa Electric Corp | Pressure gage |
JP2004233107A (en) * | 2003-01-28 | 2004-08-19 | Kyocera Corp | Package for pressure detector |
JP2004245696A (en) * | 2003-02-13 | 2004-09-02 | Kyocera Corp | Package for pressure detector |
JP2005037314A (en) * | 2003-07-18 | 2005-02-10 | Myotoku Ltd | Optical interference pressure sensor |
JP2016075562A (en) * | 2014-10-06 | 2016-05-12 | 大日本印刷株式会社 | Dynamic quantity sensor and dynamic quantity measuring device |
JP2018521317A (en) * | 2015-06-15 | 2018-08-02 | テクノロジアン テュトキムスケスクス ヴェーテーテー オサケ ユキチュア | MEMS capacitive pressure sensor and manufacturing method thereof |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50142081A (en) * | 1974-04-04 | 1975-11-15 |
-
1983
- 1983-02-08 JP JP1948183A patent/JPS59145940A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50142081A (en) * | 1974-04-04 | 1975-11-15 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1997042477A1 (en) * | 1996-05-03 | 1997-11-13 | Thomas Bilger | Micromechanical pressure and force sensor |
JP2002340718A (en) * | 2001-05-16 | 2002-11-27 | Yokogawa Electric Corp | Pressure gage |
JP2004233107A (en) * | 2003-01-28 | 2004-08-19 | Kyocera Corp | Package for pressure detector |
JP2004245696A (en) * | 2003-02-13 | 2004-09-02 | Kyocera Corp | Package for pressure detector |
JP2005037314A (en) * | 2003-07-18 | 2005-02-10 | Myotoku Ltd | Optical interference pressure sensor |
JP2016075562A (en) * | 2014-10-06 | 2016-05-12 | 大日本印刷株式会社 | Dynamic quantity sensor and dynamic quantity measuring device |
JP2018521317A (en) * | 2015-06-15 | 2018-08-02 | テクノロジアン テュトキムスケスクス ヴェーテーテー オサケ ユキチュア | MEMS capacitive pressure sensor and manufacturing method thereof |
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