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JPS5897028A - Optical waveguide switch - Google Patents

Optical waveguide switch

Info

Publication number
JPS5897028A
JPS5897028A JP19438481A JP19438481A JPS5897028A JP S5897028 A JPS5897028 A JP S5897028A JP 19438481 A JP19438481 A JP 19438481A JP 19438481 A JP19438481 A JP 19438481A JP S5897028 A JPS5897028 A JP S5897028A
Authority
JP
Japan
Prior art keywords
waveguide
optical waveguide
switch
resistor
output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19438481A
Other languages
Japanese (ja)
Inventor
Katsuzo Uenishi
上西 勝三
Yoshio Kawai
義雄 川井
Takaaki Miyashita
高明 宮下
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP19438481A priority Critical patent/JPS5897028A/en
Publication of JPS5897028A publication Critical patent/JPS5897028A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/29Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
    • G02F1/31Digital deflection, i.e. optical switching
    • G02F1/313Digital deflection, i.e. optical switching in an optical waveguide structure
    • G02F1/3137Digital deflection, i.e. optical switching in an optical waveguide structure with intersecting or branching waveguides, e.g. X-switches and Y-junctions
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/0147Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on thermo-optic effects

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain an optical waveguide switch which permits miniaturization and high scale integration, by providing a heating area in a part of an optical guide and controlling the part thereof electrically. CONSTITUTION:A thin film resistor 12 of a Y shape of NiCr or the like is provided on a branching circuit of an input waveguide 9 and output waveguides 10, 11 of an optical waveguide 2 on a dielectric substrate 1. When the resistor 12 is heated by applying voltage between the common power feed point A and selective power feed point B of said resistor and running electric current, the refractive index increases and the light propagating in the waveguie 9 propagates preferentially to the waveguide 10. Thus, the optical waveguide switch which permits miniaturization and large scale integration is obtained.

Description

【発明の詳細な説明】 この発明は、電気的に導波路の切換をすることができる
小形な光導波路スイッチに関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a small optical waveguide switch that can electrically switch waveguides.

光学的に透明な誘電体結晶、たとえばI、1Nbo。Optically transparent dielectric crystals, such as I, 1Nbo.

結晶0表面に導波路の形状をし丸部5〜20μmの試料
を約10000で5〜7時間熱処理することによシ、金
属T1が拡散され、その部分の屈折率が基板のLiNb
0.結晶の屈折率よl)x%程度増加するために、光導
波路が形成される。
By heat-treating a sample with a waveguide shape on the surface of the crystal and a round part of 5 to 20 μm at about 10,000 ℃ for 5 to 7 hours, the metal T1 is diffused and the refractive index of that part becomes the same as that of the substrate LiNb.
0. Since the refractive index of the crystal increases by about 1)x%, an optical waveguide is formed.

従来、光導波路スイッチとしては、g1図(alの正面
図、第1図(bl (W、1図(alの左側面図)、第
1図(C3(Ip! 1図(a)の右側衝動、第1図(
djの正面図に示すように、LiNbO5の結晶の電気
光学効果を使った例がある。
Conventionally, optical waveguide switches have the following types: g1 (front view of al), Fig. 1 (bl (W, Fig. 1 (left side view of al), Fig. 1 (C3 (Ip!) right side impulse of Fig. 1 (a)). , Figure 1 (
As shown in the front view of dj, there is an example using the electro-optic effect of LiNbO5 crystal.

このIIIEI図(aJ−第1図(dlにおいて、lは
LiNbO5結晶による誘電体基板、2は光導波路であ
夛、この光導波路2は先に説明したようにLiNbO5
結晶にTi の蒸着、Iリーン形成、拡散層にょシ形成
したものである。tた3は5insのような薄い絶縁体
であシ、この絶縁体3上に電極4を形成している。
In this Figure III (aJ-Figure 1 (dl), l is a dielectric substrate made of LiNbO5 crystal, 2 is an optical waveguide, and as explained earlier, this optical waveguide 2 is a LiNbO5
Ti is deposited on the crystal, an I-lean is formed, and a diffusion layer is formed. t3 is a thin insulator such as 5ins, and an electrode 4 is formed on this insulator 3.

このようにして形成した光導波路2上の電極5゜6、7
.8  に電圧を印加し、光導波路スイッチを得ている
。電極5.6に電圧を印加することにょ夛、電気光学効
果にて電極5.6に挾まれた領域の屈に導かれる。
Electrodes 5°6, 7 on the optical waveguide 2 formed in this way
.. A voltage is applied to 8 to obtain an optical waveguide switch. By applying a voltage to the electrodes 5.6, the area sandwiched by the electrodes 5.6 is guided by the electro-optical effect.

また、電極7,8に電圧を印加することによシ、上記と
同様にして、入力導波路90党は出力導波路Xiに導か
れる。
Further, by applying a voltage to the electrodes 7 and 8, the input waveguide 90 is guided to the output waveguide Xi in the same manner as described above.

この形式の光導波路で線、電気光学効果によっているた
め、15〜30Vの高い電圧が必要であシ、非接続導波
路の消光比を15dB以上得ることは難しい。
Since this type of optical waveguide relies on the linear electro-optic effect, a high voltage of 15 to 30 V is required, and it is difficult to obtain an extinction ratio of 15 dB or more for an unconnected waveguide.

もに、光マトリックスに利用することのできる光導波路
スイッチを提供することを目的とする。
Another object of the present invention is to provide an optical waveguide switch that can be used in an optical matrix.

以下、この発明の光導波路スイッチの実施例について図
面に基づき説明する。8142図(atはその一実施例
の平面図であシ、第2図(b)は8142図(atのa
−a′線に沿って切断して示す断面図である。この第2
図(&)、第2図1b)の両図において、lは誘電体基
板であシ、誘電体基板l上の光導波路2は従来の方法で
形成されている。
Embodiments of the optical waveguide switch of the present invention will be described below with reference to the drawings. Figure 8142 (at is a plan view of one embodiment thereof, and Figure 2 (b) is
FIG. 3 is a cross-sectional view taken along line -a'. This second
In both Figures (&) and Figure 2 1b), l is a dielectric substrate, and the optical waveguide 2 on the dielectric substrate l is formed by a conventional method.

この発明においては、光導波路形成分岐回路上Kli熱
抵抗体12が形成されていることに特徴を有するもので
あり、この発熱抵抗捧呈2に蝶、光導波路2が形献され
た誘電体基121上にNlCrのような薄膜抵抗体がr
YJ字形の蒸着I4ターン化を行って形成されている。
This invention is characterized in that a Kli thermal resistor 12 is formed on the optical waveguide forming branch circuit, and this heating resistor offering 2 has a butterfly and a dielectric substrate on which the optical waveguide 2 is shaped. A thin film resistor such as NlCr is placed on 121.
It is formed by performing YJ-shaped vapor deposition I4 turns.

上記発熱抵抗体12の形状鉱入力導波路9と2本の出力
導波路10.11のm−を共通として接続する形であり
、発熱抵抗体120幅は温度分布のことを考慮して、入
力導波路9、出力導波路IQ11に比較して細く形成さ
れている。
The shape of the heating resistor 12 is such that the input waveguide 9 and the m- of the two output waveguides 10. The waveguide 9 is thinner than the output waveguide IQ11.

たとえば、発熱抵抗体12の共通線電点A1選択酩電点
B閣に電圧を印加し、電流を流すことによ、11.*1
体基411であるLiNbO30屈折率温度分布依存性
によシ、200C程縦加熱すると、屈折率が約1%上昇
するので、電Rを流した共通鍵電点A1選択祷電点り、
Hの部分の下側KTi拡散で得ると同様な元ガイVが形
成される。
For example, by applying a voltage to the common line electrical point A1 selected and the selected electrical point B of the heating resistor 12, and causing a current to flow, 11. *1
Due to the temperature distribution dependence of the refractive index of LiNbO30, which is the base 411, when vertically heated to about 200C, the refractive index increases by about 1%.
A source layer V similar to that obtained by lower KTi diffusion of the H portion is formed.

このようにして、新たに形成された元ガイ?効果と、T
l拡散によりもともと形成され九元ガイV効果とか重畳
して、入力導波路9を伝播する元は出力導波路10へ優
先的に伝播する。
Thus, the newly formed ex-guy? Effect and T
Due to the superimposition of the nine-element Guy-V effect, which is originally formed by l-diffusion, the element propagating through the input waveguide 9 preferentially propagates to the output waveguide 10.

ま九1選択給電点B、D間社曲線のために通常損失が大
きいが、この発明では、この領域で発熱抵抗体12によ
る効果のため1党ガイド効果が大きくなシ、低損失で元
が伝播する。
Normally, the loss is large due to the curve between the selected feed points B and D, but in this invention, the one-party guide effect is large due to the effect of the heat generating resistor 12 in this region, and the loss is reduced and the cost is reduced. propagate.

以上のごとく、Ill!2図偽;、第2WJ伽)に示す
この発明の第1の実施例轢低い電圧で電流駆動すること
によp%低損失でかつ消光比の大き″&光導波路スイッ
チが容易に実現できる本のである。
As mentioned above, Ill! The first embodiment of the present invention shown in Figure 2 (false; 2nd WJ) is a book that allows easy realization of an optical waveguide switch with low p% loss and large extinction ratio by current drive at low voltage. It is.

第3図はこの発明の第2の実施例の平面図てあり、この
第3図61a合は入力導波路90党を出力導波路13.
14.15の3本の出力導波路への選択的接続を共通$
電点Aと選択6電点E間、共通繍電点Aと選択線電点F
閣、共通給電点Aと選択体電点G間の発熱抵抗体12へ
の通電によシl!現するものである。
FIG. 3 is a plan view of a second embodiment of the present invention, in which the input waveguide 90 is connected to the output waveguide 13.
14. Selective connection to the three output waveguides of 15 in common $
Between electric point A and selection 6 electric point E, common embroidery electric point A and selection wire electric point F
By energizing the heating resistor 12 between the common power supply point A and the selective power point G! It is something that is expressed.

また、@4図(&)扛この発ψの@30実施例を示す平
面図であjJ、栴4図(bllK4図(&)のa−a’
llに沿って切断して示す断面図である。
Also, Fig. 4 (&) is a plan view showing the @30 embodiment of the output ψ of the cylinder.
FIG.

この@4図偽シ、第4図(blに示す実施例の場合線、
特にスイッチの消光比を大きくする構造になっている。
In the case of the example shown in Fig. 4 (bl),
In particular, it has a structure that increases the extinction ratio of the switch.

すなわち、第4の実施例において発熱抵抗体12の下側
に部分的にT1拡散の施していない領域、つまシ、Ti
非拡散領域16を設定している。
That is, in the fourth embodiment, there is a region where T1 diffusion is not partially performed on the lower side of the heating resistor 12, a tab, and a Ti
A non-diffusion area 16 is set.

このような状態で、発熱抵抗体12の共通お電点A、選
択給電点り、B間を発熱させれば、光社共通鉢電点A、
選択維電点り、B方向に伝播して行く。一方、出力導波
路11には共通−電点A、選択値電点Cの区間が光遮断
領域となっているため、元が到達しないため、このよう
な光導波路に光スィッチは特に消光比を大きくできる。
In this state, if heat is generated between the common power point A, selective power point, and B of the heating resistor 12, the Kosha common power point A,
Selective electrical current is turned on and propagates in the B direction. On the other hand, in the output waveguide 11, the section between the common voltage point A and the selected value voltage point C is a light blocking region, so the source does not reach the output waveguide 11. You can make it bigger.

この@3の実施例では、発熱抵抗体12による光ガイV
効来が十分大きいときに極めて有効である。
In this @3 embodiment, the light guide V by the heating resistor 12 is
It is extremely effective when the effect is sufficiently large.

なお、上記各実施例では、誘電体基板lとして、LiN
b0.を使った例を説明し九が、この発明は光学的に透
明で正の屈折率温度依存性を有する誘電体で埋め込み導
波路を構成できる材料なら同様のことが実現できる。
In each of the above embodiments, LiN is used as the dielectric substrate l.
b0. Although an example using the above will be described, the present invention can achieve the same effect using a dielectric material that is optically transparent and has a positive temperature dependence of refractive index and can be used to construct a buried waveguide.

以上のように、この発明の光導波路スイッチによれば、
光導波路の一部に発熱領域を設け、その部分を電気的に
制御することにより光導波路スイッチを構成したので、
機械的な動作を伴なわず、元スイッチが可能になるとと
もK、小形化、高集積化の利点があシ、光マトリックス
に利用することも可能であるなどの利点を有する。
As described above, according to the optical waveguide switch of the present invention,
The optical waveguide switch was constructed by providing a heat generating area in a part of the optical waveguide and electrically controlling that part.
It does not require mechanical operation and can be used as an original switch, but it also has the advantages of being compact, highly integrated, and can be used in optical matrices.

【図面の簡単な説明】[Brief explanation of the drawing]

11図(1)は従来O光導波路スイッチの平面図、51
31図(blはli! I E (alの左側面図、第
1図telは第1図(&)の右側面図、pJ1図(dl
は従来の光導波路スイッチの正面図、第4図1alはこ
の発明の光導波路スイッチの一実施例の平面図、第2図
(blは第2図(a)のa−a’線に沿って切断して示
す断面図、第3図はこの発明の光導波路スイッチの第2
の実施例を示す平面図、第4図1alはこの発明の光導
波路スイッチのl!3の実施例の平面図、Ill!4図
(bl a第4図(alのa−a’線に沿って切断して
示す断面図である。 l・・・誘電体基板、2・・・光導波路、9・・・入力
導波路、I O,11,13〜15・・・出力導波路、
12・・発熱抵抗体、16・・・T1非拡散層、A・・
・共通酩電点、B−G−・選択線電点。 特許出願人  沖電気工業株式会社 矛1図 矛2図 ′5I−3図 牙4図
Figure 11 (1) is a plan view of a conventional O optical waveguide switch, 51
Figure 31 (bl is li! I E (left side view of al, Figure 1 tel is right side view of Figure 1 (&), pJ1 figure (dl
4 is a front view of a conventional optical waveguide switch, FIG. 4 1al is a plan view of an embodiment of the optical waveguide switch of the present invention, and FIG. FIG. 3 is a cross-sectional view showing the second optical waveguide switch of the present invention.
FIG. 4 1al is a plan view showing an embodiment of the optical waveguide switch of the present invention. Plan view of the embodiment of No. 3, Ill! Figure 4 (bla Figure 4 (This is a cross-sectional view taken along the a-a' line of al. l... Dielectric substrate, 2... Optical waveguide, 9... Input waveguide. , IO, 11, 13-15... output waveguide,
12... Heat generating resistor, 16... T1 non-diffusion layer, A...
・Common power point, B-G-・Selection wire point. Patent applicant: Oki Electric Industry Co., Ltd.

Claims (1)

【特許請求の範囲】[Claims] 光学的に透明で正の屈折率温度依存性を有する誘電体基
板と、この誘電体基板に埋め込まれ、1本の入力導波路
とこれから分岐して所定の間隔をもって配設された複数
の出力導波路とよシなる光導波路と、上記入力導波路と
各出力導波路上に設けられ入力導波路側を共通始電点と
するとともに出力導波路側を選択性電点としかつ共通類
電点と所定の選択馳電点間に通電することによシ上記入
力導波路と出力導波路を選択的に接続させる線状の発熱
抵抗体とよりなる光導波路スイッチ。
A dielectric substrate that is optically transparent and has a positive refractive index temperature dependence, and embedded in this dielectric substrate, one input waveguide and a plurality of output waveguides branched from the input waveguide and arranged at predetermined intervals. An optical waveguide, which is similar to a waveguide, is provided on the input waveguide and each output waveguide, and the input waveguide side is a common starting point, the output waveguide side is a selective point, and a common similar point. An optical waveguide switch comprising a linear heating resistor that selectively connects the input waveguide and the output waveguide by passing current between predetermined selective switching points.
JP19438481A 1981-12-04 1981-12-04 Optical waveguide switch Pending JPS5897028A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19438481A JPS5897028A (en) 1981-12-04 1981-12-04 Optical waveguide switch

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19438481A JPS5897028A (en) 1981-12-04 1981-12-04 Optical waveguide switch

Publications (1)

Publication Number Publication Date
JPS5897028A true JPS5897028A (en) 1983-06-09

Family

ID=16323697

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19438481A Pending JPS5897028A (en) 1981-12-04 1981-12-04 Optical waveguide switch

Country Status (1)

Country Link
JP (1) JPS5897028A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63217330A (en) * 1987-03-06 1988-09-09 Hitachi Ltd Optical switch
EP0718668A2 (en) * 1994-12-22 1996-06-26 Alcatel SEL Aktiengesellschaft Short length optical space switch
DE19549245A1 (en) * 1995-12-19 1997-07-03 Hertz Inst Heinrich Thermo-optical switch
EP1199594A2 (en) * 2000-10-10 2002-04-24 Zen Photonics Co. Ltd. Digital thermo-optic switch integrated with variable optical attenuators

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63217330A (en) * 1987-03-06 1988-09-09 Hitachi Ltd Optical switch
EP0718668A2 (en) * 1994-12-22 1996-06-26 Alcatel SEL Aktiengesellschaft Short length optical space switch
DE19549245A1 (en) * 1995-12-19 1997-07-03 Hertz Inst Heinrich Thermo-optical switch
DE19549245C2 (en) * 1995-12-19 2000-02-17 Hertz Inst Heinrich Thermo-optical switch
EP1199594A2 (en) * 2000-10-10 2002-04-24 Zen Photonics Co. Ltd. Digital thermo-optic switch integrated with variable optical attenuators
EP1199594A3 (en) * 2000-10-10 2003-09-10 Zen Photonics Co. Ltd. Digital thermo-optic switch integrated with variable optical attenuators

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