JPS5882552A - Semiconductor device - Google Patents

Abstract

PURPOSE:To quickly realize highly reliable line junction by providing a projection to an external connecting terminal in the vicinity of semiconductor element fixing area and by abutting in contact with an element casing. CONSTITUTION:A low melting point glass 103 is coated in the specified thickness at the read except for a dent 102 at the center of main surface of a base material of ceramic casing, and a covar lead frame 104 forming a projection 105 is placed thereon and is melted for bonding to the base material 101. A weight is placed on the periphery of the projection 105 in order to obtain uniform contact to the base material 101 and then such glass is melted. Thereby, each upper surface of the internal end of lead 106 is accurately arranged on the same plane. Thereafter, an IC is housed and fixed in the recess 102 and thereby the frame 104 is connected easily to the internal end of lead 106. Finally, the casing is hermetically sealed by a ceramic cover 107.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor device having a structure in which a lead frame is attached to an insulator by melting low-melting glass. This invention relates to a structure in which the upper ends of each lead of a 7V-me can be aligned on the same plane.

As one of the semiconductor devices formed by hermetically sealing a semiconductor integrated circuit (process 0) element, a lead 7V- Figures 1 #A to g4 show the assembly process of such a semiconductor device.
0 outline is shown.

With such a technique fiK, the element housing 1 made of ceramic material! As shown in FIG. 1, the device base 1 has a concave element accommodating portion 8 disposed in the center of one main surface, and the other parts have a uniform thickness.

As shown in Figure 2, a low melting point glass layer 3 is disposed on the main surface of the fluent substrate 1, and the low melting point glass layer 3 is brought into a molten state, for example. The lead frame number made of Kovar etc. should be fixed. This lead frame number is later cut and separated to form external connection terminals.

Next, a semiconductor integrated circuit element is housed and fixed in the III-stage element housing part 2, and the electrodes of the semiconductor integrated circuit element and the above-mentioned electrodes are connected for 1 m.
Dofu V-The inner end 4' of the fifth lead is wire bonded with a full wire or the like (such state is not shown) - 10,000, with a size corresponding to the element housing container base 1. A lid member made of a ceramic material is prepared, which has a T-shape and has a low melting point glass layer disposed on one side except for a region corresponding to the element housing portion 2. As shown in FIG. 3, such a lid member is disposed over the element accommodating portion, and the low melting point glass layer is melted.

It is fixed to the element housing container base l by solidification.

In FIG. 3, 5 indicates the ft member.

However, the lead frame 4 shown in FIG.
However, in such a semiconductor device, the inner end 4' of the lead 7V shown in FIG.
It is difficult to align the upper surfaces of each to the same plane, which causes problems such as poor bonding in the wire bonding process described in @.

The top surface of each lead inner end l of such a lead frame is made to be on the same plane because it is important to make the upper rTi of each lead 4 @ 4' a uniform plane during press processing of the lead frame, and The low melting point glass layer 3 disposed on the above-mentioned holder is shown in FIG. 2 or 4 (I
As shown in E3FIAB-B' cross section), the lead frame 4 is placed in a floating manner on top of the thick, molten low melting point glass layer s, and is attached to K11 as the low melting point glass layer 3 solidifies. In view of the fact that aligning the inner ends of the leads s4' on the same plane is a perfect solution, it was a perfect solution.

Misfire v! AFi eliminates the drawbacks of conventional semiconductor devices,
It is an object of the present invention to provide a lead frame fixing structure that can be placed on the flat surface and that allows wire bonding to be carried out quickly and with a high degree of customary effort.

According to this ninth non-invention, the #L4 body element is mounted on one of the surfaces of the l/A element base, and the external il of lIm is mounted on the surface. In a semiconductor device in which a connection terminal is fixed with glass and the voltage of the semiconductor element and the external connection terminal are arranged in a highly conductive manner, the external *a
There is provided a semiconductor device characterized in that the terminal is provided with a convex portion that contacts the element housing (transfer) base in the vicinity of the solid N portion of the semiconductor element.

The following is an example of the cow conductor W device according to the present invention.
Explain in detail.

FIG. 6 shows a practical example of the convex portion of the external connection terminal according to the present invention. The figure shows only one of the plurality of external connection terminals. In the same figure (a)-), the convex part is bent and formed by press working in the middle leading to the inner end of the lead, and in (e) and (f), the inner end of the lead is bent in the same way. (g) is a good book with the protrusions formed using a punch and a protrusion, (h) is inside the lead!
(1) shows an example in which convex portions are formed in two places, the a part and the instep part. (1) shows an example in which the convex parts are partially made thicker. Note that it is desirable from the viewpoint of workability and cost that the convex portion be formed at the same time as the process of forming the lead frame.

6 to 9 schematically show the assembly process of a semiconductor device according to the present invention.

According to the present invention, an element housing container base structure 01 made of a ceramic material such as alumina (AttOs) has a concave element housing portion 1 (l) disposed in the center of its -10,000-dimensional surface, as shown in Fig. 1ga. The melting point is 300 on the surface of the element housing container base 101 except for the element housing 5102.
℃ to 650℃.

The thickness of the low melting point glass layer on the lead oxide (Fl)O) - lead oxide (BtOn) system or the acid substrate 101 is determined by the thickness of the lead frame containing convex wht after the lead frame is attached. The thickness will be the same. In other words, the thickness is set to have the amount of glass that can be formed into a half-tube.
In this figure, 103 indicates a low-melting point glass layer 103. After a while, a pig-nickel-cobalt alloy such as Kovar, 42 alloy, or a pig-nickel alloy is applied on the low-melting-point glass layer 103 of the element housing container base 101. Made of alloy9. As shown in FIG.
J 5T is formed, nine lead frames are placed thereon, and heated until the low melting point glass layer 103 melts, and then cooled to fix the seven lead frames to the element housing container base 101 .

Such a state is shown in FIG. In the figure, 104 is a lead frame. This lead frame is later cut and separated to form external connection terminals.

In this step, the convex portion 105 of the lead frame 104 located on the element housing container base 101 is
3 is melted, it is positioned so as to be in contact with the upper surface of the element container base 101, and the convex portion 105 is fixed onto the element container base 101 in a good condition with the valleys aligned on the same plane. In such a lead frame observation process, when the glass bath is melted, an electric current is placed on the periphery of the convex part 5105 of the lead frame. ! element storage container base 10
1. Therefore, the upper surfaces of the inner ends 106 of each lead can be reliably positioned on the same plane. This method is preferable when the number of leads is large.

According to the present invention, next, a semiconductor multiplication circuit element is housed and fixed in the element housing part 102, and the electrode of the semiconductor integrated circuit element and the lead inner end 11 of the lead frame 104 are connected to each other.
106 is wire bonded to 1IillII, such as aluminum 9mm wire. (Such a state l is not shown in the figure) In such a wire po 7 defugu salt treatment process,
As mentioned above, each of the inner ends 106 of the leads are fixedly positioned on the same plane, and m**a can be easily formed using an automatic narrow 4I connecting device or the like. .

On the other hand, the thickness corresponding to the element storage container base 101 is: 5
A lid member made of a nine-cell construction material is prepared, which has a low melting point glass layer on one main surface except for the area corresponding to the element accommodating portion 102. Such fIs material is 1s
As shown in FIG. 8, the semiconductor integrated circuit device is placed in the device storage container 101 by melting and solidifying the low melting point glass layer, and the semiconductor multiplication circuit device is hermetically sealed. .

In No. 8111!3, 10 indicates a lid member.

Thereafter, the lead frame 104 is cut along line A' in FIG. 8, and the semiconductor device is optically isolated.

Note that FIG. 9 shows an o-o' cross section of the M'f diagram.

According to the present invention, the 1/A child collection device base 10
A convex portion 105 of an external connection terminal is arranged around the cord housing 9102 of No. 1, and the inner ends 106 of the plurality of leads of the lead frame are positioned on the same plane by the convex portion 105 and are in good condition. , is fixed to the element housing container base 101 with low melting point glass. Therefore, when wire bonding is performed between the electrodes of the semiconductor multiplier circuit element housed in the element accommodating section 102 and the inner ends of the leads, such wire bonding work can be carried out quickly and with high reliability. .

In one or more of the embodiments, the glass layer 'fr: The glass layer 'fr' is provided fully open except for the element accommodating portion on one upper surface of the element accommodating valley base, but it is also custom-made airtight with shank glass.

As long as the mechanical strength and the like are maintained, it may be provided partially.

Further, the number of convex portions provided on the external connection terminals is not limited to one position and number of shapes shown in the embodiments. Further, the convex portion may be provided on the external connection terminal metal all around the periphery of the element accommodating portion. In such a case, it becomes easy to locate the inner port of the tooth even at the inner end of the lead in a portion where the number of leads is small.

Note that the convex part is provided near the fixed part of the semiconductor element, but it is designed so that it can maintain the area tiI necessary for connecting the conductor led out from the semiconductor chip to the inner end of the lead of the external S connection terminal. provided at the location.

*1 In the embodiment of the present invention, dual in-line slip accommodating 1! Although the present invention is explained using a device, the present invention is not limited to this, and can be used for a flat 111 element-accommodating broom (so-called flat package).

Figures 1-1 to 11 are an external perspective view and a top view showing an outline of the assembly process of a conventional semiconductor device.

FIG. 5 is a perspective view showing the structure of the convex portion provided on the external connection terminal according to the present invention, and FIGS. 6 to 9 are external perspective views and cross-sections showing the outline of the assembly process of the semiconductor device according to the present invention. It is a diagram.

In the figure, 1, 101... element housing container base, 2, 102... element housing part, 3, 103...
・Glass Mi, 4,104...Lead frame,
105... Convex portion, 4', 106...
Inner end of lead, 5°101...! It is a member.

Rhino 4

Claims (1)

[Claims] A semiconductor element is mounted on one main surface of the element housing container base, and a plurality of external connection terminals are fixed on the main surface with glass, and the electrodes of the semiconductor element and the external connection terminals are connected to each other by conductive KW. ! In semiconductor devices that are connected
The semiconductor device is characterized in that the outer filSm connection terminal is provided with a convex portion that contacts the element housing container base in the vicinity of the fixed portion of the semiconductor element.