JPS5851528A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To inspect a pattern formed onto a dummy substrate by scanning the upper section of the substrate, to which the pattern is shaped, by two rays and detecting the difference of beams transmitting the substrate. CONSTITUTION:The same pattern sections of two adjacent elements among the patterns formed to the surface of the dummy substrate 11 are each scanned simultaneously by two minute spotty rays projected from a light source 13. Beams transmitting the substrate 11 are each received by means of photomultipliers 15, 15', converted into electrical signals corresponding to the intensity of transmitted light, amplified by means of picture amplifiers 16, 16' and transmitted to a differential amplifier 17. When the pattern of one element has a defect, two input of the amplifier 17 do not agree. A CPU 14 detects the defect by the output value of the amplifier 17, and transmits a signal indicating the defect to a printer 18 and a video monitor 19.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a semiconductor device, and in particular to a method for detecting defects in a pattern forming process. The forming process is repeated to form each pattern on the semiconductor substrate.

The pattern formed on the semiconductor substrate is, for example, silicon dioxide (8i
False) II, a photoresist family used as a mask contact in the ion implantation process, a wiring that electrically connects a predetermined area of a semiconductor substrate, or a photoresist film used as a mask layer in the photolithography process to form these, etc. There are 9 different types.

iζ, which improves the manufacturing yield and rotational speed of semiconductor devices, is
It is essential that each noodle pattern mentioned above be free of defects. Therefore, in order to remove the defective lines in the pattern,
The formed pattern is then calibrated. However, in recent times, in semiconductors such as LSI and VLSI, patterns have become finer and INIt.
It is extremely impossible to inspect all the formed patterns, and it is inevitable that the number of waves is 1M, or even if the number of samples for this sampling inspection is several tens of days, it will require a large amount of calibration man-hours. Despite the fact that it is manufactured by a manufacturer, its ability to detect defects is still insufficient.

Therefore, an object of the present invention is to provide a method for manufacturing a semiconductor device that enables pattern self-yIIJ inspection in order to improve the defect m output of pattern inspection. A pattern forming process is performed on a pseudo substrate made of a transparent material, and the pattern formed on the pseudo substrate is inspected by scanning the pseudo substrate with a light beam and detecting the transmitted light. It is characterized by including a process.

An embodiment of the present invention will be described below with reference to the drawing numbers.

Figure #11 is a top view of a pseudo-substrate made of quartz used in the above embodiment, l indicates a quartz substrate made to have almost the same dimensions as the semiconductor substrate used, 2 indicates an area i corresponding to the semiconductor element 14Ill, A plurality of patterns are formed in this.

2 to 2 are sectional views of essential parts showing an embodiment of the present invention in the order of steps, and the step of forming a linal pattern using aluminum (mul) will be explained.

- Figure (In this figure, l is the aforementioned quartz substrate.

Then, a photoresist film 4 is formed. Next, using the photoresist film 4 as a mask, htHB was selectively applied to ζ.
Removed him, removed book resist & iI4, 11k
Mk with a cloudy predetermined pattern as seen in (b)
Line 6 is formed. All of the following steps are performed on the semiconductor 1 together with the plate for forming a semiconductor device, and there is no difference from the normal manufacturing process.

11V ((+) indicates an example of a pattern defect, 6
7 indicates the remaining capacity, and 7 indicates a pinhole. All of these are detailed in recent semiconductor devices, and k4
Even when magnified using a 1k mirror, it is not easy to find.

FIG. 18 is a system configuration diagram showing the pattern calibration method for the pseudo-substrate created as described above and the Sakura Shokusoshin used.

This inspection device is a transmission type automatic mask inspection device that is generally commercially available for inspection of master masks, etc.
The purpose of the present invention is to detect patterns formed during the manufacturing process of semiconductor devices using this type of inspection equipment. To make it possible to carry out inspections. However, since the above-mentioned inspection apparatus is of a transmission type, it is impossible to directly inspect patterns formed on a semiconductor substrate. Therefore, under the same conditions, the defogging process that forms the Iζ pattern on the semiconductor and board,
The same pattern is formed on a substrate that can transmit light.

The above-mentioned mask is used for the &similar board created in this way!
By testing with 1 test equipment, a large amount of highly accurate data can be easily obtained. Therefore, the occurrence of defects in the process can be accurately grasped.

Next, the operation of the above inspection device will be briefly explained.

As shown in FIG. 8, the pseudo substrates 11 are scattered on the support stand 12. Of the patterns formed on this pseudo substrate 11, lI! The same pattern portions of two adjacent elements (not shown) are simultaneously scanned by two minute spot-shaped light beams projected from the light fi 18. The above two light rays are transmitted through a shade 1i11i provided inside the light source 18.
A predetermined portion of the screen No. 1 (DR↑) is made to emit light, and the light is focused by a lens thread, branched, and formed into an image on the surface of the subject. Therefore, the scanning on the surface of the experiment is
The central processing unit 11 (C
(PU) 14, the two beams being swept in perfect synchronization.

The light projected in this manner and transmitted through the WK-like substrate 11 is received by a photomultiplier 151.1g, converted into an electrical signal corresponding to the intensity of the transmitted light, and amplified by a VLK recorder 16.16. and sent to differential amplifier -17. Since both of these correspond to the presence or absence of a pattern on the opposite part of the two elements that perform 1IIi&, if either of the above two patterns is normal, the two signal waveforms will be the same. Therefore, the output of the differential amplifier 1!17 becomes almost zero.

For this -ζ, the pattern of -10,000 elements is 1h810
When there is a defect as shown in , some light is transmitted through the pinhole 7, and '! Since the jc signal 6I is shielded from light, the two inputs of the differential amplifier 617 do not match. Therefore, the differential increase is 1!6! 17 emit an output corresponding to the difference between the IJa users.

CP 1:l 14 is the input differential amplifier ll1l 17
A signal indicating the defect is sent to the printer 18 or video monitor 19 along with the value of the field force, and a figure indicating the pseudo board 11 (for example, as shown in FIG. 1) is sent. display the defect on the figure).

The above series of operations is repeated for all patterns on the pseudo substrate 11 by activating the support stand drive circuit 20 and moving the support stand based on a command from the CPU 14. In this way, defects can be detected accurately and quickly in all directions of the pseudo substrate 11.

According to Honjitsu h'lk, all pattern inspections are performed automatically, so large-scale data can be obtained, increasing the ability to detect defects.Furthermore, the upper Ie inspection can be done as an in-line inspection, so the pattern forming process can be carried out automatically. It is possible to grasp the status of the process quickly and quickly, and therefore it becomes possible to quickly and appropriately carry out activities to improve the same process.

The material of the Ik (1!) substrate is limited to quartz, and may be selected from materials that transmit light, such as quartz and sapphire.The pattern forming process in which the present invention can be applied is the wiring. The present invention is not limited to a pattern forming process, and may be any pattern forming process as long as it is a process of depositing a film on a substrate and then patterning it.

In addition, in the above embodiment, visible light was used as the irradiated light, but it is sufficient that the visible light passes through the pseudo substrate but does not pass through the pattern formed on the pseudo substrate.
It is also possible to use ultraviolet light, infrared light, etc.

As described above, according to the present invention, information regarding the occurrence of defects in the pattern forming process and their causes can be obtained accurately and quickly, thereby improving the manufacturing yield and reliability of semiconductor electrical manufacturing.

[Brief explanation of drawings]

Figure 1 and Figure 21 are upper curved views showing a pseudo board according to an embodiment of the present invention, and the main part 11r surface h1 turtle 81 is the above-actual 1m@
It is a system 11 & diagram showing a pattern inspection method and an inspection device used. 1, l is a substrate made of a material that can transmit a light; 5
6.7 indicates a formed pattern, 6.7 indicates a defect, and 11 indicates a pseudo substrate.

Claims (1)

[Claims] When performing a pattern forming process on a semiconductor substrate, a pseudo substrate made of a material that can transmit light together with the semiconductor substrate.
and performing the pattern forming step, and then inspecting the pattern formed on the pseudo substrate by scanning the pseudo substrate with a light beam and detecting the light that can be transmitted through the pseudo substrate. A method for manufacturing a semiconductor device, characterized in that: