JPS58102569A - Manufacture of amorphous silicon solar battery - Google Patents

Abstract

PURPOSE:To facilitate the attachment and detachment of sample substrates and to improve the operability, by pushing the side surfaces of the substrates by springs when an amorphous silicon layer is formed so as to fix the substrates, and forming a film with a part of the upper surface being masked. CONSTITUTION:A pattern of a transparent electrode 42 is formed on the glass substrate 41, a part of the transparent electrode pattern is masked, and the amorphous silicon layer is formed. In setting the substrate when the amorphous silicon film is formed, the sample substrates 51, the pushing springs 52, and the stainless mask 53 are used. The sample substrates are deeply mounted with a substrate holder itself as a stopper. The side surfaces of the substrates are pushed by the springs, and the substrates are fixed. Thereafter the lead sides of the electrode are masked and a film is formed.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing an amorphous silicon solar cell.

An object of the present invention is to provide a method for manufacturing an amorphous silicon solar cell with excellent operability and high lid productivity.

Monosilane (sin) or silicon tetratride (si7)
．． ) has a large light absorption coefficient for sunlight. High photoconductivity. It is attracting attention as a promising material for low-cost solar cells because of the large free width of the substrate.

The main manufacturing method is a plasma ovn method in which a predetermined gas is introduced into a vacuum chamber to maintain a predetermined internal pressure, and a film is formed by glow discharge within the vacuum chamber.

Figure 1 shows an overview of the plasma OVD apparatus.

In the figure, 1.2.3 are monosilane, phosphine,
Diborane and each gas is diluted with hydrogen gas. 4
, 5.6 performs precise control of the gas flow rate using a mask row controller. 7 is a vacuum chamber, and 8 is a vacuum chamber which also serves as one of the high frequency electrodes.

9 is a susceptor, 10 is a substrate heater, 11 is a high frequency power source (usually 1 i 56 MHz), and 12 is a sample substrate. 16 is an exhaust port connected to a vacuum pump system.

While performing vacuum evacuation through the exhaust port 13, monosilane gas is introduced through the mass 70-controller 4 to achieve a predetermined internal pressure (01 to 5 Torr), and then power is supplied from the high frequency power source 1 or the susceptor 9. Causes glow discharge and generates plasma. Monosilane is decomposed by this glow discharge, and an amorphous silicon film is formed on the surface of the sample substrate 12.

Note that glass, metal (stainless steel, molybdenum, etc.), polymer film, etc. are used as the sample substrate.

When doping the amorphous silicon film with impurities, phosphine or diborane is flowed through the mass 70 and the controller 5 or 6 at the same time as the monosilane gas. In the former case, an N-type amorphous silicon film is formed, and in the latter case, a P
An amorphous silicon film is formed. Note that the same effect can be obtained even if arsine (A-aH3) is used instead of phosphine.

Hydrogen, helium, argon, etc. are used as the diluent gas, and hydrogen is particularly frequently used.

This is because when amorphous silicon is formed, hydrogen compensates for dangling bonds of silicon atoms and reduces the localized level density.

Conventionally, when forming the amorphous silicon layer, a sample substrate was arranged on a substrate holder, and a mask was set from above. However, since the size of the sample substrate varied, positioning was difficult and the yield was low.

The present invention eliminates such drawbacks and improves operability and yield by improving the method of setting substrates, thereby increasing mass productivity.

The present invention will be described in more detail below based on the drawings.

FIG. 2 shows a cross-sectional view of an amorphous silicon solar cell.

Here, 21 is a glass substrate, 22 is a lower electrode (T0,
8 n O! 25 is a P-type amorphous silicon layer, 24 is a non-doped Jll (1 layer), 25 is an N-type amorphous silicon layer, 26 is an upper electrode (At,
-metal electrodes such as Mi and Or).

FIG. 3 is a sectional view of another amorphous silicon solar cell (7).

Here, 31 is a glass substrate, 32 is an upper electrode (1 piece 0.8
33 is a p-type amorphous silicon pd, 54 is a non-doped layer (ill), 55 is a w-type amorphous silicon layer, 56+i lower electrode (At, Ni
, Or, etc.).

In all of the above solar cells, light enters from the transparent electrode side.

Figure 4 is a top view of an amorphous silicon solar cell.

Here, 41 is a glass substrate, 42 is a lower electrode, 43 is an amorphous silicon layer (pstsn layer), and 46 is an upper electrode.

A pattern of transparent electrodes 42 is formed on a glass substrate 41, and a part of the transparent electrode pattern is masked to form an amorphous silicon layer.

FIG. 5 is a top view showing how a substrate is set during formation of an amorphous silicon film according to the present invention.

Here, 51 is a sample substrate, 52 is a presser spring, and 53 is a stainless steel mask.

FIG. 6 shows a sectional view of the setting state of the above-mentioned substrates.

Here, 61 is a sample substrate, 62 is a presser spring, 63 is a stainless steel mask, and 64° is a substrate holder.

Insert the sample substrate all the way into the chamber using the substrate holder itself as a stopper, and use springs to press the sides of the substrate to fix the substrate. After that, film formation is performed while masking the lead side of the electrode.

According to the manufacturing method of the present invention, it is extremely easy to attach and detach the sample substrate, and the operability is greatly improved.

Also, since the side surface of the sample substrate is fixed, there is less misalignment with the mask, reducing problems such as electrode seams.

Although a stainless steel mask is used as an example here, similar results have been obtained with metal masks made of phosphor bronze, nickel, or molybdenum compounds.

As described in detail above, the present invention provides a method for manufacturing amorphous silicon solar cells with excellent operability and high mass productivity, and can also be applied to manufacturing amorphous germanium and other amorphous semiconductor devices.

[Brief explanation of the drawing]

FIG. 1 shows an outline of a plasma OVD apparatus. FIG. 2 shows a cross section of an amorphous silicon solar cell. FIG. 3 shows a cross section of another amorphous silicon solar cell 1. FIG. 4 shows a top view of an amorphous silicon solar cell. 5SviJ is a top view showing how the substrate is set during the formation of amorphous silicon # according to the present invention. The 6th WJ is Amol 7As silicon II based on the present invention.
FIG. 3 is a cross-sectional view of the setting state of the substrate during formation. Figure 1 Figure 2 Figure 3 Figure 4 Figure 6

Claims (1)

[Claims] In an amorphous silicon solar cell in which an amorphous silicon layer with a pin structure is formed on a lower electrode formed on an insulating substrate and an upper electrode is further formed, the amorphous silicon layer is placed in a vacuum chamber where the pressure can be reduced by an evacuation system. A predetermined gas (monosilane, diborane, phosphine, etc.) is introduced into the vacuum chamber to achieve a predetermined internal pressure.
The film is formed by a discharge phenomenon, and when forming the amorphous silicon layer, the substrate is fixed by pressing the side surface of the substrate with a spring,
A method for manufacturing an amorphous silicon solar cell, characterized by forming a film while masking a part of the upper surface.