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JPS5799778A - Thin-film transistor - Google Patents

Thin-film transistor

Info

Publication number
JPS5799778A
JPS5799778A JP17561280A JP17561280A JPS5799778A JP S5799778 A JPS5799778 A JP S5799778A JP 17561280 A JP17561280 A JP 17561280A JP 17561280 A JP17561280 A JP 17561280A JP S5799778 A JPS5799778 A JP S5799778A
Authority
JP
Japan
Prior art keywords
thin
film
fet
recombination
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17561280A
Other languages
Japanese (ja)
Other versions
JPH027177B2 (en
Inventor
Seigo Togashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Citizen Holdings Co Ltd
Citizen Watch Co Ltd
Original Assignee
Citizen Holdings Co Ltd
Citizen Watch Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Citizen Holdings Co Ltd, Citizen Watch Co Ltd filed Critical Citizen Holdings Co Ltd
Priority to JP17561280A priority Critical patent/JPS5799778A/en
Publication of JPS5799778A publication Critical patent/JPS5799778A/en
Publication of JPH027177B2 publication Critical patent/JPH027177B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To decrease the variation of the characteristics of the thin-film FET even at the time of optical irradiation by conducting treatment, which increases the center of recombination of optical carriers and the density of a trap, to sections except an active layer of a Si thin-film. CONSTITUTION:When the poly Si thin-film 2 is formed onto a substrate 1, and irradiated by a N2 laser 22, intensity is properly controlled and pulsed light is given, the several hundred Angstrom thickness of the surface at the substrate 1 side of the thin-film 2 is melted, and recrystallized. Cooling is fast because pulse width is within 100n sec., crystals recrystallized have small grain size and many defects, and the centers of recombination of the optical carriers and conditions forming the traps are shaped to the surface layer in large numbers. A source 9 and a drain 10 are formed onto the Si layer 2 sufficiently shallowly according to a predeterimined method, and the FET is completed. According to this constitution, since the centers of recombination of the carriers and the traps are partially distributed to the surface layer at the substrate side in the FET, the life of the optical carriers generated through optical irradiation from the substrate side decreases remarkably, and the variation of the characteristics of the FET is largely inhibited.
JP17561280A 1980-12-12 1980-12-12 Thin-film transistor Granted JPS5799778A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17561280A JPS5799778A (en) 1980-12-12 1980-12-12 Thin-film transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17561280A JPS5799778A (en) 1980-12-12 1980-12-12 Thin-film transistor

Publications (2)

Publication Number Publication Date
JPS5799778A true JPS5799778A (en) 1982-06-21
JPH027177B2 JPH027177B2 (en) 1990-02-15

Family

ID=15999129

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17561280A Granted JPS5799778A (en) 1980-12-12 1980-12-12 Thin-film transistor

Country Status (1)

Country Link
JP (1) JPS5799778A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4766482A (en) * 1986-12-09 1988-08-23 General Electric Company Semiconductor device and method of making the same
US4916304A (en) * 1986-10-07 1990-04-10 Canon Kabushiki Kaisha Image recording device having a conductive layer formed below a light receiving window
US4968635A (en) * 1987-09-18 1990-11-06 Kabushiki Kasiha Toshiba Method of forming emitter of a bipolar transistor in monocrystallized film
US5077233A (en) * 1984-10-09 1991-12-31 Fujitsu Limited Method for recrystallizing specified portions of a non-crystalline semiconductor material to fabricate a semiconductor device therein
US5578865A (en) * 1992-01-22 1996-11-26 Kopin Corporation Reduction of parasitic effects in floating body mosfets
US5821559A (en) * 1991-02-16 1998-10-13 Semiconductor Energy Laboratory Co., Ltd. Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors
US5894151A (en) * 1992-02-25 1999-04-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having reduced leakage current
US6028333A (en) * 1991-02-16 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors
GB2358084A (en) * 2000-01-07 2001-07-11 Seiko Epson Corp Field effect transistors
WO2001050538A1 (en) * 2000-01-07 2001-07-12 Seiko Epson Corporation A thin film transistor and a method for manufacturing thereof
US6709907B1 (en) 1992-02-25 2004-03-23 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5077233A (en) * 1984-10-09 1991-12-31 Fujitsu Limited Method for recrystallizing specified portions of a non-crystalline semiconductor material to fabricate a semiconductor device therein
US4916304A (en) * 1986-10-07 1990-04-10 Canon Kabushiki Kaisha Image recording device having a conductive layer formed below a light receiving window
US4766482A (en) * 1986-12-09 1988-08-23 General Electric Company Semiconductor device and method of making the same
US4968635A (en) * 1987-09-18 1990-11-06 Kabushiki Kasiha Toshiba Method of forming emitter of a bipolar transistor in monocrystallized film
US6028333A (en) * 1991-02-16 2000-02-22 Semiconductor Energy Laboratory Co., Ltd. Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors
US5821559A (en) * 1991-02-16 1998-10-13 Semiconductor Energy Laboratory Co., Ltd. Electric device, matrix device, electro-optical display device, and semiconductor memory having thin-film transistors
US5578865A (en) * 1992-01-22 1996-11-26 Kopin Corporation Reduction of parasitic effects in floating body mosfets
US6709907B1 (en) 1992-02-25 2004-03-23 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor
US5894151A (en) * 1992-02-25 1999-04-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having reduced leakage current
US7148542B2 (en) 1992-02-25 2006-12-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of forming the same
US7649227B2 (en) 1992-02-25 2010-01-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of forming the same
GB2358084A (en) * 2000-01-07 2001-07-11 Seiko Epson Corp Field effect transistors
WO2001050538A1 (en) * 2000-01-07 2001-07-12 Seiko Epson Corporation A thin film transistor and a method for manufacturing thereof
US6528830B1 (en) 2000-01-07 2003-03-04 Seiko Epson Corporation Thin film transistor
GB2358084B (en) * 2000-01-07 2004-02-18 Seiko Epson Corp Semiconductor transistor
US6765265B2 (en) 2000-01-07 2004-07-20 Seiko Epson Corporation System and method for manufacturing a thin film transistor

Also Published As

Publication number Publication date
JPH027177B2 (en) 1990-02-15

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