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JPS5796564A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5796564A
JPS5796564A JP55173600A JP17360080A JPS5796564A JP S5796564 A JPS5796564 A JP S5796564A JP 55173600 A JP55173600 A JP 55173600A JP 17360080 A JP17360080 A JP 17360080A JP S5796564 A JPS5796564 A JP S5796564A
Authority
JP
Japan
Prior art keywords
polycrystalline
electrode
layer
oxide film
end surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55173600A
Other languages
Japanese (ja)
Other versions
JPS5953709B2 (en
Inventor
Keiji Nishimoto
Masanao Itoga
Masao Kanazawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55173600A priority Critical patent/JPS5953709B2/en
Publication of JPS5796564A publication Critical patent/JPS5796564A/en
Publication of JPS5953709B2 publication Critical patent/JPS5953709B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H10B99/10—Memory cells having a cross-point geometry

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To prevent a short circuit between the second polycrystalline Si electrode by mounting a process which cuts and removes one part of the second polycrystalline Si layer coated on an end surface of the first polycrystalline Si electrode between the second polycrystalline Si electrode among polycrystalline Si electrodes having multilayer structure. CONSTITUTION:A thin oxide film 15, the first polycrystalline Si layer 16 and a layer insulating film 17 are formed onto a substrate 14 to which an element forming region 13 consisting of a field oxide film 11 and a channel cut region 12 is shaped. The films 17, 16 and the layers 14, 15 are removed through etching by using a resist 18. A shallow undercut section 19 is formed to a lower section of the end surface of the lower layer polycrystalline Si electrode 16'. A gate oxide film 20 is shaped onto the region 13, a thin oxide film 21 is molded to the end surface of the lower layer polycrystalline Si electrode 16', the second polycrystalline Si layer 22 is deposited and formed onto the substrate, and the upper layer polycrystalline Si electrode 22' is shaped using a resist 23 as a mask. Accordingly, the short circuit of the second polycrystalline Si electrode is prevented.
JP55173600A 1980-12-09 1980-12-09 Manufacturing method of semiconductor device Expired JPS5953709B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55173600A JPS5953709B2 (en) 1980-12-09 1980-12-09 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55173600A JPS5953709B2 (en) 1980-12-09 1980-12-09 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5796564A true JPS5796564A (en) 1982-06-15
JPS5953709B2 JPS5953709B2 (en) 1984-12-26

Family

ID=15963601

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55173600A Expired JPS5953709B2 (en) 1980-12-09 1980-12-09 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5953709B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01106014U (en) * 1988-01-08 1989-07-17

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5760855A (en) * 1980-09-30 1982-04-13 Nec Corp Manufacture of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5760855A (en) * 1980-09-30 1982-04-13 Nec Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS5953709B2 (en) 1984-12-26

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